What is claimed is:
1. A porous substrate for epitaxial growth, comprising:
an underlying layer made of III-nitride semiconductor;
a void-formation preventive layer grown on the underlying layer;
a porous III-nitride semiconductor layer; and
a porous metallic layer grown on the porous III-nitride semiconductor layer.
2. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the underlying layer made of III-nitride semiconductor is a GaN free-standing substrate.
3. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the underlying layer made of III-nitride semiconductor is grown on a base material.
4. The porous substrate for epitaxial growth as defined in claim 1, wherein:
a thickness of the underlying layer made of III-nitride semiconductor is 300 nm or more.
5. The porous substrate for epitaxial growth as defined in claim 3, wherein:
the base material is prepared from at least one material selected from the group consisting of sapphire, silicon, silicon carbide, langasite, zirconium diboride, and gallium arsenide.
6. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the III-nitride semiconductor is prepared from at least one material selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.
7. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the void-formation preventive layer has less than 6% lattice constant difference with respect to that of the underlying layer.
8. The porous substrate for epitaxial growth as defined in claim 7, wherein:
the void-formation preventive layer is prepared from AlGaN.
9. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the void-formation preventive layer is a superlattice structure composed of alternately grown plural pairs of an AlxGa1-xN (0<x0.5) layer and an AlyGa1-yN (0y<x) layer.
10. The porous substrate for epitaxial growth as defined in claim 1, wherein:
a thickness of the void-formation preventive layer is 3 nm or more.
11. The porous substrate for epitaxial growth as defined in claim 1, wherein:
a thickness of the porous III-nitride semiconductor layer is 3 m or less.
12. The porous substrate for epitaxial growth as defined in claim 1, wherein:
the porous metallic layer is prepared from at least one material selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, tellurium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, and gold, or the nitrides thereof.
13. A porous substrate for epitaxial growth, comprising:
a sapphire substrate;
a GaN layer grown on the sapphire substrate;
an AlGaN layer grown on the GaN layer;
a porous GaN layer grown on the AlGaN layer; and
a porous TiN layer.
14. A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor;
growing III-nitride semiconductor layer on the void-formation preventive layer;
growing a metallic layer on the III-nitride semiconductor layer; and
forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer.
15. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, wherein:
the underlying layer prepared from the III-nitride semiconductor is a GaN free-standing substrate.
16. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, further comprising the step of:
growing the underlying layer made of the III-nitride semiconductor on a base material.
17. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 16, wherein:
the base material is prepared from at least one material selected from the group consisting of sapphire, silicon, silicon carbide, langasite, zirconium diboride, and gallium arsenide.
18. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, wherein:
the III-nitride semiconductor is prepared from at least one material selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.
19. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, wherein:
the void-formation preventive layer is made of AlGaN or a metallic nitride having a lattice constant close to that of the underlying layer.
20. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, wherein:
the void-formation preventive layer is a superlattice structure composed of alternately grown plural pairs of an AlxGa1-xN (0<x0.5) layer and an AlyGa1-yN (0y<x) layer.
21. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, wherein:
the metallic porous layer is made of at least one material selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, tellurium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, and gold, or the nitrides thereof.
22. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 14, further comprising the step of:
forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer by means of the heat treatment.
23. The method for manufacturing a porous substrate for epitaxial growth as defined in claim 22, wherein:
the heat treatment is implemented in an atmosphere containing hydrogen gas or a hydride gas.
24. A method for manufacturing a porous substrate for epitaxial growth, comprising the steps of:
growing a first GaN layer on a sapphire substrate;
growing an AlGaN layer on the first GaN layer;
growing a second GaN layer on the AlGaN layer;
growing a Ti layer on the second GaN layer; and
heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer.
25. A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
growing a void-formation preventive layer on an underlying layer made of III-nitride semiconductor;
growing III-nitride semiconductor layer on the void-formation preventive layer;
growing a metallic layer on the III-nitride semiconductor layer;
forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer;
epitaxially growing III-nitride semiconductor substrate on the metallic layer in which voids are formed; and
exfoliating the III-nitride semiconductor substrate from the metallic layer.
26. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, wherein:
the underlying layer made of the III-nitride semiconductor is a GaN free-standing substrate.
27. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, further comprising the step of:
growing the underlying layer made of the III-nitride semiconductor on a base material.
28. The method for manufacturing III-nitride semiconductor substrate as defined in claim 27, wherein:
the base material is prepared from at least one material selected from the group consisting of sapphire, silicon, silicon carbide, langasite, zirconium diboride, and gallium arsenide.
29. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, wherein:
the III-nitride semiconductor is prepared from at least one material selected from the group consisting of GaN, AlGaN, InGaN, and InAlGaN.
30. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, wherein:
the void-formation preventive layer is made of AlGaN or a metallic nitride having a lattice constant close to that of the underlying layer.
31. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, wherein:
the void-formation preventive layer is a superlattice structure composed of alternately grown plural pairs of an AlxGa1-xN (0<x0.5) layer and an AlyGa1-yN (0y<x) layer.
32. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, wherein:
the metallic porous layer is made of at least one material selected from the group consisting of titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, yttrium, zirconium, niobium, molybdenum, tellurium, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, and gold, or the nitrides thereof.
33. The method for manufacturing III-nitride semiconductor substrate as defined in claim 25, further comprising the step of:
forming voids in the III-nitride semiconductor layer and the metallic layer grown on the void-formation preventive layer by means of the heat treatment.
34. The method for manufacturing III-nitride semiconductor substrate as defined in claim 33, wherein:
the heat treatment is implemented in an atmosphere containing hydrogen gas or a hydride gas.
35. A method for manufacturing III-nitride semiconductor substrate, comprising the steps of:
growing a first GaN layer on a sapphire substrate;
growing an AlGaN layer on the first GaN layer;
growing a second GaN layer on the AlGaN layer;
growing a Ti layer on the second GaN layer; and
heat-treating the second GaN layer and the Ti layer in a mixed gas atmosphere of hydrogen gas and a hydride gas to form voids in the second GaN layer and the Ti layer;
epitaxially growing a GaN substrate on the Ti layer in which voids are formed; and
exfoliating the GaN substrate from the Ti layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A computing device-implemented method comprising:
scheduling, by the computing device, a scanning device to perform a scan of one or more devices;
receiving, by the computing device and at a scheduled time, scan information from the scan, by the scanning device, of the one or more devices,
the scan information being received in two or more different formats;
converting, by the computing device and using information regarding a single normalized format and information regarding how to map the two or more different formats into normalized scan information, the scan information, received in the two or more different formats, into the single normalized format to form the normalized scan information,
converting the scan information including:
mapping operating system information and application information associated with the scan information to a common set of identifiers; and
using the common set of identifiers to convert the two or more different formats of the scan information into the single normalized format; and
processing, by the computing device, the normalized scan information to produce enriched, normalized scan information,
the processing of the normalized scan information including:
receiving device metadata including information associated with the one or more devices being scanned,
generating unique identifiers for the one or more devices,
iteratively identifying, based on the unique identifiers, at least one of the one or more devices associated with the normalized scan information, and
associating, for the identified at least one of the one or more devices, the device metadata with the normalized scan information to produce the enriched, normalized scan information.
2. The computing device-implemented method of claim 1, further comprising:
storing the enriched, normalized scan information; and
providing the stored enriched, normalized scan information to an application management system associated with the one or more devices.
3. The computing device-implemented method of claim 1, where the single normalized format comprises a common result format.
4. The computing device-implemented method of claim 1, where scheduling the scanning device to perform the scan of the one or more devices comprises:
generating configuration information for the scan;
generating time information for the scan;
generating Internet protocol (IP) information associated with the one or more devices to be scanned; and
scheduling the scan of the one or more devices based on the generated configuration information, the generated time information, and the generated IP information.
5. The computing device-implemented method of claim 1, where processing the normalized scan information further comprises:
receiving rules associated with the one or more devices;
applying the rules to the normalized scan information to produce rules metadata for the one or more devices; and
associating, for the identified at least one of the one or more devices, the rules metadata with the normalized scan information to produce the enriched, normalized scan information.
6. The computing device-implemented method of claim 1, where the unique identifiers comprise unique hashes to identify the one or more devices.
7. The computing device-implemented method of claim 6, where at least one of the one or more devices utilizes a dynamic host configuration protocol (DHCP), and
where generating unique identifiers for the one or more devices includes:
identifying aspects of the one of the one or more devices that do not change based on the DHCP, and
assigning the unique hashes to the one or more devices based on the identified aspects.
8. The computing device-implemented method of claim 1, where the computing device comprises a scanning server.
9. A device comprising:
a memory to store a plurality of instructions; and
a processor to execute instructions in the memory to:
schedule one or more scanning devices to perform a scan of one or more devices,
receive, from the one or more scanning devices, scan information associated with the scan of the one or more devices,
the received scan information being provided in two or more different formats,
receive device metadata associated with the one or more devices being scanned,
convert, using information regarding a single normalized format and information regarding how to map the two or more different formats into normalized scan information, the received scan information, in the two or more different formats, into the single normalized format to form the normalized scan information,
the processor, when converting the scan information, being further to:
map operating system information and application information associated with the scan information to a common set of identifiers, and
use the common set of identifiers to convert the two or more different formats of the scan information into the single normalized format, and
process the normalized scan information to produce enriched, normalized scan information,
the processor, when processing the normalized scan information, being to:
identify unique identifiers for the one or more devices,
iteratively identify, based on the unique identifiers, at least one of the one or more devices associated with the normalized scan information, and
associate, for the identified at least one of the one or more devices, the device metadata with the normalized scan information to produce enriched, normalized scan information.
10. The device of claim 9, where the processor is further to at least one of:
store the enriched, normalized scan information in the memory, or
provide the enriched, normalized scan information to an application management system associated with the one or more devices.
11. The device of claim 9, where the single normalized format comprises a common result format.
12. The device of claim 9, where, when scheduling the one or more scanning devices to perform the scan of the one or more devices, the processor is further to:
generate configuration information for the scan,
generate time information for the scan,
generate Internet protocol (IP) information associated with the one or more devices to be scanned, and
schedule the scan of the one or more devices based on the generated configuration information, the generated time information, and the generated IP information.
13. The device of claim 9, where the processor is further to:
generate the unique identifiers.
14. The device of claim 9, where, when associating the device metadata with the normalized scan information, the processor is further to:
receive rules associated with the one or more devices,
apply the rules to the normalized scan information to produce rules metadata for the one or more devices, and
associate the rules metadata with the normalized scan information to produce the enriched, normalized scan information.
15. The device of claim 9, where the unique identifiers comprise unique hashes to identify the one or more devices.
16. A non-transitory computer-readable memory device that stores instructions, the instructions comprising:
one or more instructions which, when executed by a processor, cause the processor to schedule a scanning device to perform a scan of one or more devices;
one or more instructions which, when executed by the processor, cause the processor to receive scan information from the scan of the one or more devices,
the scan information being received in two or more different formats;
one or more instructions which, when executed by the processor, cause the processor to convert, using information regarding a single normalized format and information regarding how to map the two or more different formats into normalized scan information, the scan information, received in the two or more different formats, into the single normalized format to form the normalized scan information,
the one or more instructions to convert the scan information including:
one or more instructions to map operating system information and application information associated with the scan information to a common set of identifiers, and
one or more instructions to use the common set of identifiers to convert the two or more different formats of the scan information into the single normalized format; and
one or more instructions which, when executed by the processor, cause the processor to enrich the normalized scan information to produce enriched, normalized scan information,
the one or more instructions to cause the processor to enrich the normalized scan information including:
one or more instructions to receive device metadata including information associated with the one or more devices,
one or more instructions to receive rules associated with the one or more devices,
one or more instructions to apply the rules to the normalized scan information to produce rules metadata for the one or more devices, and
one or more instructions to associate the device metadata and the rules metadata with the normalized scan information to produce the enriched, normalized scan information.
17. The computing device-implemented method of claim 1, where the device metadata includes information associated with one or more of:
a manufacturer associated with a particular device, of the one or more devices,
a model associated with the particular device, or
a functional feature associated with the particular device.
18. The non-transitory computer-readable memory device of claim 16, where the instructions further include at least one of:
one or more instructions to store the enriched, normalized scan information in a memory; or
one or more instructions to provide the enriched, normalized scan information to an application management system.
19. The non-transitory computer-readable memory device of claim 16, where the one or more instructions to schedule the scanning device to perform the scan of the one or more devices further include:
one or more instructions to generate configuration information for the scan;
one or more instructions to generate time information for the scan;
one or more instructions to generate Internet protocol (IP) information associated with the one or more devices to be scanned; and
one or more instructions to schedule the scan of the one or more devices based on the generated configuration information, the generated time information, and the generated IP information.
20. The non-transitory computer-readable memory device of claim 16, where the single normalized format comprises a common result format.