1. A radiation sensitive refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A), (C) a radiation sensitive decomposer and (D) a stabilizer,
wherein the decomposable compound (A) contains at least one compound having at least one structure selected from the group consisting of structures represented by the following formulas (1) to (7);
wherein R1 and R2 are each independently an alkylene group, perfluoroalkylene group or alkylsilylene group, and the alkylene group and the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014 or \u2014OCOO\u2014 bond,
wherein M is Si or Ge, R3 is an alkylene group or perfluoroalkylene group, R4 is an alkylene group, perfluoroalkylene group, alkylsilylene group or single bond, R5, R6, R7 and R8 are each independently a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyl group, perfluoroalkoxyester group or perfluoroaryl group, m is an integer of 0 to 2, and the alkylene group or the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014 or \u2014OCOO\u2014 bond,
wherein R9 and R10 are each independently an alkylene group or perfluoroalkylene group, the alkylene group or the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014 or \u2014OCOO\u2014 bond,
wherein R11 is an oxyalkylene group or single bond, and R12 is a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyester group or perfluoroaryl group,
wherein R13 is a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyl group, perfluoroalkoxyester group or perfluoroaryl group,
wherein R14 is an alkylene group or a structure represented by the following formula (6)-1, (6)-2 or (6)-3:
wherein R15, R16, R17 and R18 are each independently a hydrogen atom, chain alkyl group having 1 to 6 carbon atoms, chlorine atom, bromine atom, iodine atom, hydroxyl group, mercapto group, carboxyl group, alkoxyl group having 1 to 6 carbon atoms, alkylthio group having 1 to 6 carbon atoms, haloalkyl group having 1 to 6 carbon atoms, haloalkoxyl group having 1 to 6 carbon atoms, haloalkylthio group having 1 to 6 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, mercaptoalkyl group having 1 to 6 carbon atoms, hydroxyalkoxyl group having 1 to 6 carbon atoms, mercaptoalkylthio group having 1 to 6 carbon atoms, aryl group having 6 to 10 carbon atoms or aralkyl group having 7 to 11 carbon atoms,
\u2014O\u2014R19\u2014O\u2014\u2003\u2003(6)-2
wherein R19 is an alkylene group,
\u2014NH\u2014R20NH\u2014\u2003\u2003(6)-3
wherein R20 is an alkylene group,
wherein R21 is an alkylene group.
2. The composition of claim 1, wherein the maximum difference between the refractive index of a portion exposed to radiation and the refractive index of a portion unexposed to radiation is 0.02 or more.
3. The composition of claim 1, wherein the relationship between the refractive index nB of the non-decomposable compound (B) and the refractive index nA of the decomposable compound (A) satisfies the following expression (1):
nb\u2212nA\xb10.05\u2003\u2003(1).
4. The composition of claim 1, wherein the decomposable compound (A) is an acid decomposable compound, the non-decomposable compound (B) is an acid non-decomposable polymer, and the radiation sensitive decomposer (C) is a radiation sensitive acid generator.
5. The composition of claim 1, wherein the stabilizer (D) is at least one selected from the group consisting of amino compound, epoxy compound, thiirane compound, oxetane compound, alkoxymethyl melamine compound, alkoxymethyl glycoluril compound, alkoxymethyl benzoguanamine compound, alkoxymethyl urea compound, isocyanate compound, cyanate compound, oxazoline compound, oxazine compound, silyl compound, imidazole compound and amine terminated dendrimer compound.
6. The composition of claim 1 which further contains a catalyst for reacting the decomposable compound (A) with the stabilizer (D).
7. A refractive index pattern forming method comprising exposing a radiation sensitive refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A), (C) a radiation sensitive decomposer and (D) a stabilizer to radiation and heating to react the stabilizer (D) with the decomposable compound (A) of an unexposed portion.
8. A radiation sensitive refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A) and (C) a radiation sensitive decomposer,
wherein the decomposable compound (A) contains at least one compound having at least one structure selected from the group consisting of structures represented by the following formulas (1) to (7):
wherein R1 and R2 are each independently an alkylene group, perfluoroalkylene group or alkylsilylene group, and the alkylene group and the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014or \u2014OCOO\u2014 bond,
wherein M is Si or Ge, R3 is an alkylene group or perfluoroalkylene group, R4is an alkylene group, perfluoroalkylene group, alkylsilylene group or single bond, R5, R6, R7 and R8 are each independently a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyl group, perfluoroalkoxyester group or perfluoroaryl group, m is an integer of 0 to 2, and the alkylene group or the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014 or \u2014OCOO\u2014 bond,
wherein R9 and R10 are each independently an alkylene group or perfluoroalkylene group, the alkylene group or the perfluoroalkylene group may contain \u2014O\u2014, \u2014CO\u2014, \u2014COO\u2014 or \u2014OCOO\u2014 bond,
wherein R11 is an oxyalkylene group or single bond, and R12 is a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyester group or perfluoroaryl group,
wherein R13 is a hydrogen atom, alkyl group, alkoxyl group, alkoxyester group, perfluoroalkyl group, perfluoroalkoxyl group, perfluoroalkoxyester group or perfluoroaryl group,
wherein R14 is an alkylene group or a structure represented by the following formula (6)-1, (6)-2 or (6)-3:
wherein R15, R16, R17 and R18 are each indenendently a hydrogen atom, chain aikyl group having 1 to 6 carbon atoms, chlorine atom, bromine atom, iodine atom, hydroxyl group, mercapto group, carboxyl group, alkoxyl group having 1 to 6 carbon atoms, alkylthio group having 1 to 6 carbon atoms, haloalkyl group having 1 to 6 carbon atoms, haloalkoxyl group having 1 to 6 carbon atoms, haloalkylthio group having 1 to 6 carbon atoms, hydroxyalkyl group having 1 to 6 carbon atoms, mercaptoalkyl group having 1 to 6 carbon atoms, hydroxyalkoxyl group having 1 to 6 carbon atoms, mercaptoalkylthio group having 1 to 6 carbon atoms, aryl group having 6 to 10 carbon atoms or aralkyl group having 7 to 11 carbon atoms,
\u2014O\u2014R19\u2014O\u2014\u2003\u2003(6)-2
wherein R19 is an alkylene group,
\u2014NH\u2014R20\u2014NH\u2014\u2003\u2003(6)-3
wherein R20 is an alkylene group,
wherein R21 is an alkylene group.
9. A refractive index pattern forming method comprising exposing a refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A) and (C) a radiation sensitive decomposer to radiation through a pattern mask and heating to decompose the decomposable compound of an unexposed portion.
10. A refractive index pattern forming method comprising exposing a refractive index changing composition comprising (A) a decomposable compound, (B) a non-decomposable compound having a higher refractive index than the decomposable compound (A) and (C) a radiation sensitive decomposer to radiation through a pattern mask and treating the composition with (D) a stabilizer to react the decomposable compound (A) of an unexposed portion with the stabilizer (D).
11. A refractive index pattern formed by the method of claim 7.
12. An optical material having a refractive index pattern formed by the method of claim 7.
13. A refractive index pattern formed by the method of claim 9.
14. A refractive index pattern formed by the method of claim 10.
15. An optical material having a refractive index pattern formed by the method of claim 9.
16. An optical material having a refractive index pattern formed by the method of claim 10.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a gate electrode over a substrate;
a gate insulating film over the gate electrode;
a first electrode and a second electrode over the gate insulating film;
a first wiring over the first electrode;
a second wiring over the second electrode;
an oxide semiconductor layer over the first wiring and the second wiring, the oxide semiconductor layer being in contact with a side face and a top face of each of the first electrode and the second electrode and a side face and a top face of each of the first wiring and the second wiring; and
a protective insulating layer over the oxide semiconductor layer,
wherein the first electrode is extended so as to have an end portion positioned more inwardly than an end portion of the first wiring and overlap with the gate electrode, and the second electrode is extended so as to have an end portion positioned more inwardly than an end portion of the second wiring and overlap with the gate electrode,
wherein the first wiring and the second wiring do not overlap with the gate electrode,
wherein electrical conductivity of each of the first electrode and the second electrode is equal to or higher than electrical conductivity of the oxide semiconductor layer,
wherein electrical conductivity of the first electrode is equal to or lower than electrical conductivity of the first wiring,
wherein electrical conductivity of the second electrode is equal to or lower than electrical conductivity of the second wiring, and
wherein the protective insulating layer has direct contact with the gate insulating film, the first wiring, the second wiring, and the oxide semiconductor layer without having direct contact with any portion of the first electrode and the second electrode.
2. The semiconductor device according to claim 1, wherein the end portion of the first wiring is aligned with one end portion of the gate electrode, and wherein the end portion of the second wiring is aligned with the other end portion of the gate electrode.
3. The semiconductor device according to claim 1, wherein a thickness of the oxide semiconductor layer is within the range of from 5 nm to 200 nminclusive, and wherein a thickness of each of the first electrode and the second electrode is within the range of from 5 nm to 200 nm inclusive.
4. The semiconductor device according to claim 1, wherein electrical conductivity of each of the first electrode and the second electrode is within the range of from 1\xd710\u22124 Scm to 1\xd7102 Scm inclusive.
5. The semiconductor device according to claim 1, wherein a length of a region where the first electrode overlaps with the gate electrode and a length of a region where the second electrode overlaps with the gate electrode are each within the range of from 0.2 \u03bcm to 5 \u03bcm inclusive.
6. The semiconductor device according to claim 1,
wherein each of the first electrode and the second electrode comprises indium, gallium, and zinc, and
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
7. A semiconductor device comprising:
a gate electrode over a substrate;
a gate insulating film overlapping with the gate electrode;
a first electrode and a second electrode overlapping with the gate insulating film;
a first wiring overlapping with the first electrode;
a second wiring overlapping with the second electrode;
an oxide semiconductor layer over the first wiring and the second wiring, the oxide semiconductor layer being in contact with a side face and a top face of each of the first electrode and the second electrode and a side face and a top face of each of the first wiring and the second wiring; and
a protective insulating layer over the oxide semiconductor layer,
wherein the first electrode is extended so as to have an end portion positioned more inwardly than an end portion of the first wiring and overlap with the gate electrode, and the second electrode is extended so as to have an end portion positioned more inwardly than an end portion of the second wiring and overlap with the gate electrode,
wherein the first wiring and the second wiring do not overlap with the gate electrode,
wherein electrical conductivity of each of the first electrode and the second electrode is equal to or higher than electrical conductivity of the oxide semiconductor layer,
wherein electrical conductivity of the first electrode is equal to or lower than electrical conductivity of the first wiring,
wherein electrical conductivity of the second electrode is equal to or lower than electrical conductivity of the second wiring, and
wherein the protective insulating layer has direct contact with the gate insulating film, the first wiring, the second wiring, and the oxide semiconductor layer without having direct contact with any portion of the first electrode and the second electrode.
8. The semiconductor device according to claim 7, wherein the end portion of the first wiring is aligned with one end portion of the gate electrode, and wherein the end portion of the second wiring is aligned with the other end portion of the gate electrode.
9. The semiconductor device according to claim 7, wherein a thickness of the oxide semiconductor layer is within the range of from 5 nm to 200 nm inclusive, and wherein a thickness of each of the first electrode and the second electrode is within the range of from 5 nm to 200 nm inclusive.
10. The semiconductor device according to claim 7, wherein electrical conductivity of each of the first electrode and the second electrode is within the range of from 1\xd710\u22124 Scm to 1\xd7102 Scm inclusive.
11. The semiconductor device according to claim 7, wherein a length of a region where the first electrode overlaps with the gate electrode and a length of a region where the second electrode overlaps with the gate electrode are each within the range of from 0.2 \u03bcm to 5 \u03bcm inclusive.
12. The semiconductor device according to claim 7,
wherein each of the first electrode and the second electrode comprises indium, gallium, and zinc, and
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.
13. A semiconductor device comprising:
a gate electrode over a substrate;
a gate insulating film overlapping with the gate electrode;
a first electrode and a second electrode overlapping with the gate insulating film;
a first wiring overlapping with the first electrode;
a second wiring overlapping with the second electrode;
an oxide semiconductor layer over the first wiring and the second wiring, the oxide semiconductor layer being in contact with a side face and a top face of each of the first electrode and the second electrode and a side face and a top face of each of the first wiring and the second wiring; and
a protective insulating layer over the oxide semiconductor layer,
wherein the first electrode is extended so as to have an end portion positioned more inwardly than an end portion of the first wiring and overlap with the gate electrode, and the second electrode is extended so as to have an end portion positioned more inwardly than an end portion of the second wiring and overlap with the gate electrode,
wherein the first wiring and the second wiring do not overlap with the gate electrode, and
wherein the protective insulating layer has direct contact with the gate insulating film, the first wiring, the second wiring, and the oxide semiconductor layer without having direct contact with any portion of the first electrode and the second electrode.
14. The semiconductor device according to claim 13, wherein the end portion of the first wiring is aligned with one end portion of the gate electrode, and wherein the end portion of the second wiring is aligned with the other end portion of the gate electrode.
15. The semiconductor device according to claim 13, wherein a thickness of the oxide semiconductor layer is within the range of from 5 nm to 200 nm inclusive, and wherein a thickness of each of the first electrode and the second electrode is within the range of from 5 nm to 200 nm inclusive.
16. The semiconductor device according to claim 13, wherein a length of a region where the first electrode overlaps with the gate electrode and a length of a region where the second electrode overlaps with the gate electrode are each within the range of from 0.2 \u03bcm to 5 \u03bcm inclusive.
17. The semiconductor device according to claim 13,
wherein each of the first electrode and the second electrode comprises indium, gallium, and zinc, and
wherein the oxide semiconductor layer comprises indium, gallium, and zinc.