1. A planar magnetic transducer apparatus, comprising:
a stator;
a plurality of magnets aligned in rows on the stator, wherein each pair of magnets is separated by a gap;
a plurality of spacers to fill each gap and separate each pair of magnets, wherein each of the plurality of spacers contacts at least one magnet, wherein one of the plurality of spacers comprises wood configured to be compressed between one of the pair of magnets to fill the gap between the one pair of magnets; and
an adhesive to bond the magnets to the stator and to bond each spacer between each pair of magnets.
2. A planar magnetic transducer apparatus, comprising:
a stator
a plurality of magnets aligned in rows on the stator, wherein each pair of magnets is separated by a gap;
a plurality of spacers to fill each gap and separate each pair of magnets, wherein each of the plurality of spacers contacts at least one magnet, wherein the spacers comprise balsa wood, and wherein the balsa wood is configured to take the shape of the gap; and
an adhesive to bond the magnets to the stator and to bond each spacer between each pair of magnets.
3. A planar magnetic transducer apparatus, comprising:
a stator
a plurality of magnets aligned in rows on the stator, wherein each pair of magnets is separated by a gap;
a plurality of spacers to fill each gap and separate each pair of magnets, wherein each of the plurality of spacers contacts at least one magnet, wherein each of the plurality of spacers comprises balsa wood; and
an adhesive to bond the magnets to the stator and to bond each spacer between each pair of magnets.
4. The apparatus of claim 3, wherein the adhesive comprises a reactive adhesive.
5. The apparatus of claim 3, wherein each magnet is aligned in parallel with another magnet.
6. The apparatus of claim 3, wherein each of the plurality of magnets comprises neodymium.
7. The apparatus of claim 3, wherein each gap comprises a similar distance.
8. The apparatus of claim 3, wherein adhesive comprises a cyanoacrylate adhesive.
9. The apparatus of claim 8, wherein the cyanoacrylate adhesive is to cure and form a rigid bond.
10. The apparatus of claim 3, wherein each of the plurality of spacers comprises a finger-like structure that extends along one or more rows of magnets to place a gap between each pair of magnets.
11. The apparatus of claim 3, wherein at least one spacer comprises side fingers that contact one end of each magnet in a row and place a gap between each magnet in the row.
12. The apparatus of claim 3, further comprising an array of magnets with at least two rows of magnets.
13. The apparatus of claim 12, wherein at least one spacer comprises mid-fingers to separate magnets in the array, wherein the mid-fingers contact one end of each magnet in an upper row of magnets and a lower row of magnets, and wherein the mid-fingers place gaps between each pair of magnets in each of the rows and places gaps between each pair of magnets between the upper and lower rows.
14. The apparatus of claim 3, wherein at least one spacer comprises fingers that extend along the length of the magnets so the gap between each pair of magnets is separated by the spacer.
15. The apparatus of claim 14, wherein the spacer comprising fingers is a single integrated structure.
16. The apparatus of claim 3, wherein the stator comprises one or more built-in spacer structures to place a gap between each of the magnets.
17. An audio system, comprising:
a planar magnetic transducer configured to generate high output, the planar magnetic transducer comprising:
a plurality of neodymium magnets aligned in rows on a stator, wherein each neodymium magnet is aligned with another neodymium magnet, and wherein each pair of neodymium magnets is separated by a gap;
a plurality of balsa wood spacers to fill each gap and separate each pair of neodymium magnets, wherein each of the plurality of balsa wood spacers contacts at least one neodymium magnet; and
cyanoacrylate adhesive to bond the neodymium magnets to the stator and to bond each balsa wood spacer between each pair of neodymium magnets.
18. The system of claim 17, wherein the cyanoacrylate adhesive is to reliably hold the plurality of neodymium magnets to the stator when the transducer generates high output.
19. A planar magnetic transducer apparatus, comprising:
a stator;
a plurality of magnets aligned in rows on the stator and separated from each other with a gap;
a plurality of spacers arranged to fill each gap between adjacent pairs of magnets, wherein one of the plurality of spacers is electrically-insulating and configured to be compressed and deformed between one pair of magnets to fill the gap between the one pair of magnets; and
an adhesive to bond the plurality of magnets to the stator and to bond the plurality of spacers between the adjacent pairs of magnets.
20. The apparatus of claim 19, wherein the one of the plurality of spacers is further configured to absorb a portion of the adhesive for the bond.
21. The apparatus of claim 19, wherein the adhesive comprises a cyanoacrylate adhesive.
22. The apparatus of claim 21, wherein the one pair of magnets comprises neodymium magnets.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of growing a zinc-oxide-based semiconductor layer on a substrate by an MOCVD method, comprising the steps of:
using water vapor and a metalorganic compound not containing oxygen,
(a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer; and
(b) performing crystal growth at a high growth temperature and at a pressure higher than said low growth pressure to form a high-temperature grown single-crystal layer on said low-temperature grown single-crystal layer.
2. A method according to claim 1, wherein said low growth temperature is a temperature in the range of 250\xb0 C. to 450\xb0 C.
3. A method according to claim 1, wherein said high growth temperature is a temperature in the range of 700\xb0 C. to 850\xb0 C.
4. A method according to claim 1, wherein said pressure higher than said low growth pressure is a pressure in the range of 40 kPa to 120 kPa.
5. A method according to claim 1, wherein said high-temperature grown single-crystal layer forming step performs heat treatment on said low-temperature grown single-crystal layer before the growth of said high-temperature grown single-crystal layer.
6. A method according to claim 1, wherein said substrate is an \u03b1-sapphire single crystal, and a crystal growth plane is a {11-20} plane.
7. A method according to claim 1, wherein said low-temperature grown single-crystal layer is a zinc oxide (ZnO) layer, and said high-temperature grown single-crystal layer is a MgxZn(1-x)O (0\u2266x\u22660.43) layer.
8. A method according to claim 1, wherein the layer thickness of said low-temperature grown single-crystal layer is in the range of 5 nm to 60 nm.
9. A method according to claim 1, wherein the layer thickness of said high-temperature grown single-crystal layer is 1.5 \u03bcm or greater.
10. A method according to claim 8, wherein the growth rate of said low-temperature grown single-crystal layer is 9 nmmin or less.
11. A method according to claim 9, wherein the growth rate of said high-temperature grown single-crystal layer is 60 nmmin or less.
12. A method according to claim 7, wherein in said high-temperature grown single-crystal layer forming step, an impurity is doped after the thickness of the grown layer becomes greater than 1 \u03bcm.
13. A method according to claim 1, wherein said substrate is one of sapphire, gallium oxide (Ga2O3), silicon carbide (SiC), gallium nitride (GaN), and silicon substrates.
14. A method of manufacturing a semiconductor light emitting device by growing zinc-oxide-based semiconductor layers on a substrate by an MOCVD method, comprising the steps of:
using water vapor and a metalorganic compound not containing oxygen,
(a) performing crystal growth at a low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a low-temperature grown single-crystal layer;
(b) performing crystal growth at a high growth temperature and at a pressure higher than said low growth pressure to form a high-temperature grown single-crystal layer on said low-temperature grown single-crystal layer; and
(c) performing crystal growth at a high growth temperature and at a pressure higher than said low growth pressure to form a light emitting layer on said high-temperature grown single-crystal layer.
15. A method according to claim 14, wherein said low growth temperature is a temperature in the range of 250\xb0 C. to 450\xb0 C.
16. A method according to claim 14, wherein said high growth temperature is a temperature in the range of 700\xb0 C. to 850\xb0 C.
17. A method according to claim 14, wherein said pressure higher than said low growth pressure is a pressure in the range of 40 kPa to 120 kPa.
18. A method according to claim 14, wherein said high-temperature grown single-crystal layer includes an undoped layer of at least 1.0 \u03bcm thickness formed on said low-temperature grown single-crystal layer.
19. A method according to claim 14, wherein said substrate is an A-plane sapphire substrate, and said low-temperature grown single-crystal layer and said high-temperature grown single-crystal layer are each a MgxZn(1-x)O (0\u2266x\u22660.43) layer.
20. A method according to claim 1, wherein said low-temperature grown single-crystal layer forming step (a) comprises the steps of:
(a1) performing crystal growth at a first low growth temperature and at a low growth pressure in the range of 1 kPa to 30 kPa to form a first low-temperature grown single-crystal layer; and
(a2) performing crystal growth at a second low growth temperature higher than said first low growth temperature and at a pressure higher than said low growth pressure to form a second low-temperature grown single-crystal layer on said first low-temperature grown single-crystal layer.
21. A method according to claim 20, wherein said first low growth temperature is a temperature in the range of 250\xb0 C. to 450\xb0 C., and said second low growth temperature is a temperature in the range of 500\xb0 C. to 650\xb0 C.
22. A method according to claim 20, wherein said first low-temperature grown single-crystal layer and said second low-temperature grown single-crystal layer are each a zinc oxide (ZnO) layer, and said high-temperature grown single-crystal layer is a MgxZn(1-x)O (0\u2266x\u22660.43) layer.
23. A method according to claim 20, wherein the layer thickness of said first low-temperature grown single-crystal layer is in the range of 5 nm to 60 nm.
24. A method according to claim 20, wherein the layer thickness of said second low-temperature grown single-crystal layer is in the range of 5 nm to 80 nm.
25. A method according to claim 20, wherein the layer thickness of said high-temperature grown single-crystal layer greater than or equal to 0.5 \u03bcm.
26. A method according to claim 20, wherein the growth rate of said second low-temperature grown single-crystal layer and said high-temperature grown single-crystal layer is 60 nmmin or less.
27. A method according to claim 20, wherein the step (a2) of forming said second low-temperature grown single-crystal layer includes a step of:
forming said second low-temperature grown single-crystal layer while changing the growth temperature from said second low growth temperature to said high growth temperature, upon transition to the step (b) of forming said high-temperature grown single-crystal layer.
28. A method according to claim 14, wherein said low-temperature grown single-crystal layer forming step (a) comprises the steps of:
(a1) performing crystal growth at a first low growth temperature in the range of 250\xb0 C. to 450\xb0 C. and at a low growth pressure in the range of 1 kPa to 30 kPa to form a first low-temperature grown single-crystal layer; and
(a2) performing crystal growth at a second low growth temperature higher than said first low growth temperature and at a pressure higher than said low growth pressure to form a second low-temperature grown single-crystal layer on said first low-temperature grown single-crystal layer.
29. A method according to claim 28, wherein said first low growth temperature is a temperature in the range of 250\xb0 C. to 450\xb0 C., and said second low growth temperature is a temperature in the range of 500\xb0 C. to 650\xb0 C.
30. A method according to claim 28, wherein said first low-temperature grown single-crystal layer and said second low-temperature grown single-crystal layer are each a zinc oxide (ZnO) layer, and said high-temperature grown single-crystal layer is a MgxZn(1-x)O (0\u2266x\u22660.43) layer.
31. A method according to claim 28, wherein said high-temperature grown single-crystal layer includes an undoped layer of at least 0.25 \u03bcm thickness formed on said high-temperature grown single-crystal layer.