1. A gel cassette adaptor comprising:
an open sided trough having an attachment perimeter; and
an attachment flange coupled to the attachment perimeter, the attachment flange being configured for compatible mating with a gel cassette.
2. The gel cassette adaptor of claim 1, further comprising an adhesive positioned on the attachment flange, the adhesive being configured to facilitate attachment of the gel cassette adaptor to the gel cassette.
3. The gel cassette adaptor of claim 2, wherein the adhesive is pressure sensitive tape.
4. The gel cassette adaptor of claim 1, wherein the open sided trough and the attachment flange are made of a plastic selected from the group consisting of styrene acrylonitrile, polycarbonate, polystyrene, acrylic based polymers, polymethyl methacrylate, polyethylene terephthalate, glycol-modified polyethylene terephthalate, polypropylene, Acetel and copolymers thereof.
5. The gel cassette adaptor of claim 1, wherein the attachment flange is integral with the open sided trough, creating a unitary structure.
6. The gel cassette adaptor of claim 5, wherein the unitary structure is made of plastic.
7. The gel cassette adaptor of claim 1, further comprising one or more alignment elements that interact with one or more corresponding features on the gel cassette to facilitate proper positioning of the gel cassette adaptor relative to the gel cassette.
8. The gel cassette adaptor of claim 1, wherein the trough is between 4 to 8 inches wide\xd70.75 to 2.0 inches in height\xd70.75 and 2.0 inches in depth.
9. The gel cassette adaptor of claim 1, wherein the trough has a volume capacity between 10 and 250 mL.
10-79. (canceled)
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming InGaN, comprising:
providing a precursor gas mixture within a chamber including one or more Group III precursors and a nitrogen precursor;
causing a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the one or more Group III precursors within the chamber to be at least about 5,600;
decomposing at least a portion of the one or more Group III precursors and at least a portion of the nitrogen precursor to provide nitrogen and one or more Group III elements including indium and gallium within the chamber; and
epitaxially growing InGaN over a substrate within the chamber from the one or more Group III elements and nitrogen within the chamber.
2. The method of claim 1, further comprising selecting the substrate to comprise GaN.
3. The method of claim 1, wherein causing the ratio of the partial pressure of the nitrogen precursor to the partial pressure of the one or more Group III precursors within the chamber to be at least about 5,600 comprises causing the ratio to be in a range extending from 5,600 to 6,600.
4. The method of claim 1, wherein epitaxially growing the InGaN over the substrate within the chamber comprises depositing a layer of InGaN on a surface of a layer of GaN using a halide vapor phase epitaxy (HVPE) process or a metalorganic vapor phase epitaxy (MOVPE) process.
5. The method of claim 1, wherein epitaxially growing the InGaN further comprises growing a layer of InGaN over the substrate to an average thickness of about one hundred nanometers (100 nm) or more.
6. The method of claim 5, wherein growing the layer of InGaN over the substrate to the average final thickness of about 100 nm or more comprises growing the layer of InGaN to an average final thickness of about one hundred and fifty nanometers (150 nm) or more.
7. The method of claim 6, wherein growing the layer of InGaN to the average final thickness of about 150 nm or more comprises growing the layer of InGaN to an average final thickness of about two hundred nanometers (200 nm) or more.
8. The method of claim 1, wherein epitaxially growing the InGaN comprises formulating the InGaN to have a composition of InxGa(1-x)N, wherein x is at least about 0.05.
9. The method of claim 8, wherein formulating the InGaN to have a composition of InxGa(1-x)N, wherein x is at least about 0.05, comprises formulating the InGaN to have a composition of InxGa(1-x)N, wherein x is between about 0.05 and about 0.10.
10. The method of claim 1, wherein epitaxially growing the InGaN further comprises limiting a size of V-pits in the InGaN to an average pit width of about two hundred nanometers (200 nm) or less.
11. The method of claim 10, wherein limiting the size of V-pits in the InGaN to the average pit width of about two hundred nanometers (200 nm) or less comprises limiting the size of V-pits in the InGaN to an average pit width of about one hundred and fifty nanometers (150 nm) or less.
12. The method of claim 1, further comprising selecting the nitrogen precursor to comprise ammonia.
13. The method of claim 1, further comprising selecting the one or more Group III precursors to comprise trimethylindium and triethylgallium.
14. A method of forming a ternary III-nitride material, comprising:
providing a precursor gas mixture within a chamber and formulating the precursor gas mixture to comprise a nitrogen precursor and two or more Group III precursors;
causing a ratio of a partial pressure of the nitrogen precursor to a partial pressure of the two or more Group III precursors within the chamber to be at least about 5,600;
decomposing the nitrogen precursor and the two or more Group III precursors in the chamber to form elemental nitrogen and two or more Group III elements within the chamber; and
epitaxially growing the ternary III-nitride material over a substrate within the chamber from the elemental nitrogen and the two or more Group III elements.
15. The method of claim 14, wherein epitaxially growing the ternary III-nitride material over the substrate comprises growing the ternary III-nitride material on a binary III-nitride material.
16. The method of claim 15, further comprising formulating the ternary III-nitride material such that a relaxed lattice parameter mismatch between the ternary III-nitride material and the binary III-nitride material is at least about 0.5% of the relaxed average lattice parameter of the binary III-nitride material.
17. The method of claim 16, wherein epitaxially growing the ternary III-nitride material over the substrate comprises growing a layer of the ternary III-nitride having an average layer thickness of at least about two hundred nanometers (200 nm).
18. The method of claim 17, wherein epitaxially growing the ternary III-nitride material further comprises limiting a size of V-pits in the ternary III-nitride material to an average pit width of about two hundred nanometers (200 nm) or less.
19. The method of claim 14, wherein causing the ratio of the partial pressure of the nitrogen precursor to the partial pressure of the two or more Group III precursors within the chamber to be at least about 5,600 comprises causing the ratio to be in a range extending from 5,600 to 6,600.