1. A reusable snoreair flow sensor comprising:
(a) a polyvinylidene fluoride (PVDF) film of a predetermined shape configuration and having a layer of metallization on opposed major surfaces of said film;
(b) a first and a second insulated lead wires each having a contact member affixed to an uninsulated end portion thereof;
(c) a conductive adhesive adhering the contact members on the first and the second lead wires to the layers of metallization of the opposed major surfaces of the PVDF film;
(d) a first layer of double-sided adhesive tape, the layers being of said predetermined shape configuration and overlaying said contact members and a portion of the insulated lead wires and adhered on a first side to the metalized PVDF film, forming a contiguous seal with the adhesive tape;
(e) a second layer of double-sided adhesive tape, the layers being of said predetermined shape configuration and overlaying said contact members and a portion of the insulated lead wires and adhered on a second side to the metalized PVDF film, forming a contiguous seal with the surface of the adhesive tape; and
(f) a first and a second outermost layers of a moisture impervious, flexible, thermoplastic material, the first outermost layer being adhered to the first layer of double-sided adhesive tape, forming a contiguous seal with the surface of the adhesive tape, and the second outermost layer being adhered to the second layer of double-sided adhesive tape, forming a contiguous seal with the surface of the adhesive tape, and with perimeter portions of the first and second outermost layers being bonded to one another forming a non-porous permanent encapsulation.
2. The reusable snoreair flow sensor of claim 1 wherein the predetermined shape configuration is generally Y-shaped.
3. The reusable snoreair flow sensor of claim 1 wherein the predetermined shape configuration is generally rectangular, but with a rounded end.
4. The reusable snoreair flow sensor as in claim 1 wherein the conductive adhesive is a pressure sensitive adhesive containing conductive carbon particles.
5. The reusable snoreair flow sensor as in claim 1 wherein the first and second outermost layers comprise polyurethane.
6. The reusable snoreair flow sensor as in claim 1 wherein the bonded perimeter portion of the first and second outermost layers preclude moisture form penetrating the sensor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device, comprising:
a stack of semiconductor layers;
an ohmic contact electrically coupling to the stack, the ohmic contact comprising a II-VI semiconductor containing Be and having an oxidation rate when exposed to oxidizing materials; and
a passivation capping layer overlying the ohmic contact, said capping layer having an oxidation rate which is less than the oxidation rate of the ohmic contact.
2. The semiconductor device of claim 1 wherein the ohmic contact includes BeTe.
3. The semiconductor device of claim 1 wherein the passivation capping layer includes ZnTe.
4. The semiconductor device of claim 1 wherein the passivation capping layer is electrically conductive.
5. The semiconductor device of claim 1 wherein the light producing semiconductor stack comprises a II-VI light emitting diode.
6. The semiconductor device of claim 1 wherein the light producing semiconductor stack comprises a II-VI laser diode.
7. The semiconductor device of claim 1 wherein the ohmic contact is doped p-type.
8. The semiconductor device of claim 1 wherein the ohmic contact is doped n-type.
9. The semiconductor device of claim 1 wherein the passivation capping layer is a p-type semiconductor.
10. The semiconductor device of claim 1 wherein the passivation capping layer is doped n-type.
11. The semiconductor device of claim 1 wherein the passivation capping layer is selected from the group consisting of CdSe, CdTe, HgS, HgSe and ZnSe.
12. The semiconductor device of claim 1 wherein the passivation capping layer comprises a metal.
13. The semiconductor device of claim 1 wherein the stack forms a light emitting diode.
14. The semiconductor device of claim 1 wherein the stack forms a laser.