1. A method of forming integrated circuitry, comprising:
forming isolation trenches within semiconductive material of a first area of circuitry of a semiconductor substrate and within semiconductive material of a second area of circuitry of the semiconductor substrate, the first circuitry area comprising a first minimum active area spacing between the isolation trenches received therein and the second circuitry area comprising a second minimum active area spacing between the isolation trenches received therein, the first minimum active area spacing being less than the second minimum active area spacing;
depositing a first insulative material to within the isolation trenches of the first circuitry area and to within the isolation trenches of the second circuitry area, the first insulative material less than filling remaining volume of the isolation trenches within the semiconductive material of the second circuitry area; and
after depositing the first insulative material, depositing an insulative nitride-comprising layer to within the isolation trenches within the semiconductive material of the second circuitry area but not to within the isolation trenches within the semiconductive material of the first circuitry area, the insulative nitride-comprising layer comprising opposing sidewalls that face one another within the semiconductive material and a base surface extending from and between the opposing and facing sidewalls within the semiconductive material.
2. The method of claim 1 wherein the isolation trenches within the first circuitry area have respective narrowest cross sectional dimensions which are less than that of the isolation trenches within the second circuitry area.
3. The method of claim 2 wherein the depositing of the first insulative material is effective to fill remaining volume of the isolation trenches within the first circuitry area.
4. The method of claim 1 wherein the integrated circuitry comprises memory circuitry, the first circuitry area comprising a memory array area and the second circuitry area comprising peripheral circuitry area.
5. The method of claim 1 wherein the integrated circuitry comprises logic circuitry, the first circuitry area comprising a logic circuitry area and the second circuitry area comprising metal routing area.
6. The method of claim 1 wherein the insulative nitride comprises Si3N4.
7. The method of claim 1 wherein the insulative nitride comprises AlN.
8. The method of claim 1 wherein the depositing of the first insulative material comprises atomic layer depositing.
9. The method of claim 1 wherein the first insulative material comprises silicon dioxide, the depositing of the first insulative material comprises:
i) depositing a layer comprising a metal over outer surfaces within the isolation trenches of the first circuitry area and of the second circuitry area; and
ii) flowing a silanol to the metal of the outer surfaces effective to deposit a silicon dioxide-comprising layer within the isolation trenches of the first circuitry area and of the second circuitry area.
10. The method of claim 9 wherein the metal comprises a metal compound.
11. The method of claim 9 wherein the metal comprises one of aluminum, yttrium, zirconium, hafnium and mixtures thereof.
12. The method of claim 11 wherein the metal comprises aluminum.
13. The method of claim 9 wherein the metal-comprising layer is no more than 4 monolayers thick.
14. The method of claim 9 wherein the depositing of the first insulative material is self limiting to silicon dioxide-comprising deposition after completing said depositing the layer comprising the metal.
15. The method of claim 1 comprising after the depositing of the insulative nitride-comprising layer, depositing a second insulative material effective to fill remaining volume of the second isolation trench.
16. The method of claim 15 wherein the first and second insulative materials are the same.
17. The method of claim 15 wherein the first and second insulative materials are different.
18. The method of claim 15 wherein the second insulative material comprises silicon dioxide, the depositing of the second insulative material comprises at least one of (c) and (d),
where (c) comprises depositing spin on glass; and
where (d) comprises flowing O3 and TEOS to the semiconductor substrate.
19. The method of claim 18 wherein the depositing of the second insulative material comprises (c).
20. The method of claim 18 wherein the depositing of the second insulative material comprises (d).
21. The method of claim 1 wherein the depositing of the first insulative material is effective to fill remaining volume of the isolation trenches within the first circuitry area.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic sensing device comprising a stacked body including:
a pinned layer having a magnetization direction pinned in a predetermined direction;
a free layer having a magnetization direction, the free layer configured so that the free layer magnetization direction changes according to an external magnetic field and, when the external magnetic field is zero, is parallel to the magnetization direction of the pinned layer; and
an intermediate layer sandwiched between the pinned layer and the free layer.
2. The magnetic sensing device according to claim 1, wherein the free layer has an easy axis of magnetization parallel to the magnetization direction of the pinned layer.
3. The magnetic sensing device according to claim 1, further comprising bias applying means for applying a bias magnetic field to the stacked body in a direction orthogonal to the magnetization direction of the pinned layer.
4. The magnetic sensing device according to claim 3, wherein the bias applying means is either a permanent magnet or a bias current line extending in the magnetization direction of the pinned layer.
5. A magnetic sensor comprising:
a first magnetic sensing module including first and second magnetic sensing devices connected to each other at a first connection point; and
a second magnetic sensing module including third and fourth magnetic sensing devices connected to each other at a second connection point,
wherein:
the first and second magnetic sensing modules construct a bridge circuit in which an end on the side opposite to the first connection point in the first magnetic sensing device and an end on the side opposite to the second connection point in the fourth magnetic sensing device are connected to each other at a third connection point, an end on the side opposite to the first connection point in the second magnetic sensing device and an end on the side opposite to the second connection point in the third magnetic sensing device are connected to each other at a fourth connection point, configured so that when a voltage is applied across the third and fourth connection points, an output is detected at the first and second connection points, and
each of the first to fourth magnetic sensing devices comprises:
a stacked body including:
a pinned layer having a magnetization direction pinned in a predetermined direction,
a free layer having a magnetization direction, the free layer configured so that the free layer magnetization direction changes according to an external magnetic field and, when the external magnetic field is zero, is parallel to the magnetization direction of the pinned layer, and
an intermediate layer sandwiched between the pinned layer and the free layer; and
bias applying means for applying a bias magnetic field to the stacked body in the direction orthogonal to the magnetization direction of the pinned layer.
6. The magnetic sensor according to claim 5, wherein the free layer has an easy axis of magnetization parallel to the magnetization direction of the pinned layer.
7. The magnetic sensor according to claim 5, wherein the bias applying means is either a permanent magnet or a bias current line extending in the magnetization direction of the pinned layer.
8. The magnetic sensor according to claim 5, wherein the magnetization directions of the pinned layers of the first and second magnetic sensing devices are parallel to each other, and
the magnetization directions of the pinned layers of the third and fourth magnetic sensing devices are parallel to each other.
9. The magnetic sensor according to claim 8, wherein the first and second magnetic sensing devices are disposed on a straight line extending in a direction corresponding to the magnetization directions of the pinned layers of the first and second magnetic devices, and
the third and fourth magnetic sensing devices are disposed on a straight line extending in a direction corresponding to the magnetization directions of the pinned layers of the third and fourth magnetic sensing devices.
10. The magnetic sensor according to claim 8, wherein the first and second magnetic sensing devices are disposed on a first substrate, and the third and fourth magnetic sensing devices are disposed on a second substrate different from the first substrate.
11. The magnetic sensor according to claim 5, wherein the magnetization directions of the pinned layers of the first and third magnetic sensing devices are parallel to each other, and the magnetization directions of the pinned layers of the second and fourth magnetic sensing devices are parallel to each other.
12. The magnetic sensor according to claim 11, wherein the first and third magnetic sensing devices are disposed on a straight line extending in a direction corresponding to the magnetization directions of the pinned layers of the first and third magnetic sensing devices, and the second and fourth magnetic sensing devices are disposed on a straight line extending in a direction corresponding to the magnetization directions of the pinned layers of the second and fourth magnetic sensing devices.
13. The magnetic sensor according to claim 11, wherein the first and third magnetic sensing devices are disposed on a first substrate, and the second and fourth magnetic sensing devices are disposed on a second substrate different from the first substrate.
14. An ammeter for measuring current to be sensed, by sensing a magnetic field generated by the current to be sensed, comprising:
a first magnetic sensing module including first and second magnetic sensing devices connected to each other at a first connection point; and
a second magnetic sensing module including third and fourth magnetic sensing devices connected to each other at a second connection point,
wherein:
the first and second magnetic sensing modules construct a bridge circuit in which an end on the side opposite to the first connection point in the first magnetic sensing device and an end on the side opposite to the second connection point in the fourth magnetic sensing device are connected to each other at a third connection point, an end on the side opposite to the first connection point in the second magnetic sensing device and an end on the side opposite to the second connection point in the third magnetic sensing device are connected to each other at a fourth connection point, configured so that when a voltage is applied across the third and fourth connection points, an output is detected at the first and second connection points,
each of the first to fourth magnetic sensing devices comprises:
a stacked body including:
a pinned layer having a magnetization direction pinned in a predetermined direction,
a free layer having a magnetization direction, the free layer configured so that the free layer magnetization direction changes according to an external magnetic field and, when the external magnetic field is zero, is parallel to the magnetization direction of the pinned layer, and
an intermediate layer sandwiched between the pinned layer and the free layer; and
bias applying means for applying a bias magnetic field to the stacked body in the direction orthogonal to the magnetization direction of the pinned layer, and
a magnetic field generated by the current to be sensed is sensed by each of the first to fourth magnetic sensing devices.
15. The ammeter according to claim 14, wherein the current to be sensed flows in parallel or anti-parallel to the magnetization direction of the pinned layer.
16. A method of forming a magnetic sensing device, comprising: a stacking step of forming a stacked body by sequentially forming a free layer comprising a first ferromagnetic layer whose magnetization direction changes according to an external magnetic field, an intermediate layer, and a pinned layer comprising a second ferromagnetic layer having coercive force larger than that of the first ferromagnetic layer; and a regularization step of making regularization so that the magnetization directions of the free layer and the pinned layer become parallel to each other, wherein the magnetization directions of the free layer and the pinned layer are set to be parallel to each other in an initial state where the external magnetic field is zero by the regularization step.
17. The method of forming a magnetic sensing device according to claim 16, wherein the first ferromagnetic layer is formed so as to have an easy axis of magnetization, and
regularization is made so that the magnetization directions of the first and second ferromagnetic layers become parallel to the easy axis of magnetization.
18. The method of forming a magnetic sensing device according to claim 17, wherein the direction of the easy axis of magnetization is set by forming the first ferromagnetic layer while applying a magnetic field in a predetermined direction.
19. A method of forming a magnetic sensing device according to claim 16, wherein regularization is made by performing an annealing process at a temperature in a range from 250\xb0 C. to 400\xb0 C. while applying a magnetic field in a range from 1.6 kAm to 160 kAm.