1. Combination of an adhesive sticking together sheet substrates forming elements of a fuel cell and comprising metal andor ceramic substrates, wherein the adhesive comprises a water glass component and an additive in the form of boron nitride, wherein the percentage by weight of solid glass in the water glass component is 20% to 50% and the percentage by weight of boron nitride based upon the dry mass of the adhesive is 1% to 40%, and wherein said adhesive provides a gas tight and electrically insulating bond between the substrates.
2. The combination in accordance with claim 1, characterised in that boron nitride having a percentage by weight based upon the dry mass of 7 to 25% is contained in the adhesive.
3. The combination in accordance with claim 1, characterised in that the boron nitride is present in particulate form having an average particle size of 1 \u03bcm to 10 \u03bcm.
4. The combination in accordance with claim 1, characterised in that the boron nitride is contained in the adhesive in the form of a hexagonal form of boron nitride.
5. The combination in accordance with claim 1, characterised in that the water glass component comprises a compound having the formula
Me2O*SiO2
wherein the molar ratio SiO2:Me2O>3 and wherein Me represents Li, Na, andor K.
6. The combination in accordance with claim 1, characterised in that the water glass component has a melting point in the range from 1100 to 1150\xb0 C.
7. The combination in accordance with claim 1, characterised in that the adhesive also comprises a mineral filler which is non-gassing up to a temperature of 1100\xb0 C. or more.
8. The combination in accordance with claim 7, characterised in that the quantity of mineral filler in the adhesive is such that the coefficient of thermal expansion of the dry adhesive is substantially the same as that of steel.
9. The combination in accordance with claim 7, characterised in that the percentage by weight of the mineral filler in the adhesive (based upon the dry mass thereof) is 1 to 40%.
10. The combination in accordance with claim 7, characterised in that the mineral filler is selected from kaolin, mica, andor talcum.
11. The combination in accordance with claim 9, characterised in that the percentage by weight of the mineral filler in the adhesive (based upon the dry mass thereof) is 4 to 20%.
12. The combination in accordance with claim 1, characterised in that the percentage by weight of solid glass in the water glass component is 30 to 40%.
13. The combination in accordance with claim 1, characterised in that it also comprises a dispersing agent having a percentage by weight of 0.2 to 5% (based upon the dry mass of the adhesive).
14. The combination in accordance with claim 1, characterised in that the adhesive also comprises a quantity of a thickening agent.
15. The combination in accordance with claim 14, characterised in that the thickening agent comprises silicic acid having a percentage by weight of up to 10% based upon the dry mass of the adhesive.
16. The combination in accordance with claim 1, characterised in that the substrates are subjected to an operational temperature of up to 850\xb0 C.
17. A fuel cell comprising a plurality of metal layers that are stuck together by an adhesive which comprises a water glass component and an additive in the form of boron nitride, wherein the percentage by weight of solid glass in the water glass component is 20% to 50% and the percentage by weight of boron nitride based upon the dry mass of the adhesive is 1% to 40%, wherein said adhesive provides a gas tight and electrically insulating bond between the metal layers.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-10. (canceled)
11. A method of manufacturing a semiconductor device comprising steps of:
(a) forming a gate insulating film of an n-type MOS transistor over a semiconductor substrate;
(b) after the step (a), forming a gate electrode of the n-type MOS transistor over the gate insulating film;
(c) after the step (b), implanting first ions in the semiconductor substrate;
(d) after the step (c), forming sidewalls over side surfaces of the gate electrode;
(e) after the step (d), implanting second ions into the gate electrode and the semiconductor substrate, thereby the gate electrode become amorphous;
(f) after the step (e), forming an insulating film in order to cover the gate electrode;
(g) after the step (f), performing thermal processing in order to crystallize the gate electrode;
(h) after the step (g), removing the insulating film; and
(i) after the step (h), forming a silicide layer on a top surface of the gate electrode;
(j) after the step (h), applying a tensile stress in a channel region of the n-type MOS transistor under the gate electrode,
whereby a drain current of the n-type MOS transistor is improved by the stress.
12. A method of manufacturing a semiconductor device according to the claim 11,
wherein the second ions are arsenic.
13. A method of manufacturing a semiconductor device according to the claim 11,
wherein the second ions are germanium.
14. A method of manufacturing a semiconductor device according to the claim 11,
wherein the step (f) is performed at a first temperature,
wherein the step (g) is performed at a second temperature, and
wherein the second temperature is higher than the first temperature.
15. A method of manufacturing a semiconductor device according to the claim 14,
wherein the step (d) is performed at a third temperature, and
wherein the second temperature is higher than the third temperature.