What is claimed is:
1. A low-resistance gate transistor comprising:
a gate oxide film formed on a semiconductor substrate;
a gate formed on the gate oxide film;
a first gate sidewall having a vertical pattern in contact with a side of the gate at both sides of the gate and a horizontal pattern formed on the gate oxide film extended from the vertical pattern;
second gate sidewalls formed of a material having a resistivity lower than the gate, each of said second gate sidewalls having one side in contact with the vertical pattern of the first gate sidewall and a bottom in contact with the horizontal pattern of the first gate sidewall, and said second gate sidewalls each having a round surface;
an insulating layer formed on an entire surface including the gate and the first and second gate sidewalls; and,
sourcedrain regions formed in a surface of the semiconductor substrate on both sides of the gate.
2. The low-resistance gate transistor as claimed in claim 1, wherein the gate and the first gate sidewall are formed of polysilicon.
3. The low-resistance gate transistor as claimed in claim 1, wherein the second gate sidewalls are formed of tungsten.
4. The low-resistance gate transistor as claimed in claim 1, wherein the second gate sidewalls each have a top formed not higher than the top of the first gate sidewall, and an outside edge of a bottom of each of the second gate sidewalls is aligned with the horizontal pattern of the first gate sidewall.
5. The low-resistance gate transistor as claimed in claim 1, the sourcedrain region includes a lightly doped impurity region and a heavily doped impurity region in contact with the lightly doped impurity region, and the lightly doped impurity region is aligned with the first gate sidewall.
6. The low-resistance gate transistor as claimed in claim 1, the sourcedrain region includes a lightly doped impurity region and a heavily doped impurity region in contact with the lightly doped impurity region, and the lightly doped impurity region is aligned with the gate.
7. The low-resistance gate transistor as claimed in claim 1, further comprising a halo ion implanting region formed in a surface of the semiconductor substrate under the first and second gate sidewalls.
8. A method for fabricating a low-resistance gate transistor, comprising steps of:
(1) forming a gate oxide film on a semiconductor. substrate, and forming a gate thereon;
(2) forming a lightly doped impurity region in the surface of the semiconductor substrate using the gate as a mask;
(3) forming a first layer of a material the same as the gate on an entire surface of the gate oxide film including the gate to a fixed thickness;
(4) forming a second layer of a material having a resistivity lower than the gate on an entire surface of the first layer, and patterning the first layer of a material the same as the gate and the second layer of a material having a resistivity lower than the gate to form a first gate sidewall and second gate sidewalls; and
(5) forming a gate protection insulating layer on an entire surface, and injecting impurity ions heavily to form heavily doped impurity regions in the surface of the semiconductor substrate.
9. The method for fabricating a low-resistance transistor as claimed in claim 8, wherein the gate and the first gate sidewall are formed of poly-silicon.
10. The method for fabricating a low-resistance transistor as claimed in claim 8, wherein the first layer of a material the same as the gate and the second layer of a material having a resistivity lower than the gate are simultaneously patterned so that the first gate sidewall is formed to have vertical patterns and horizontal patterns and the second gate sidewalls are formed to have round surfaces at both sides of the gate.
11. The method for fabricating a low-resistance transistor as claimed in claim 10, wherein the second gate sidewalls have a top formed not higher than the top of the first gate sidewall, and an outside edge of a bottom of the second gate sidewall is aligned with the horizontal pattern of the first gate sidewall.
12. The method for fabricating a low-resistance transistor as claimed in claim 8, wherein the material having a resistivity lower than the gate is tungsten.
13. A method for fabricating a low-resistance transistor comprising steps of:
(1) forming a gate oxide film on a semiconductor substrate and forming a gate thereon;
(2) forming a halo ion implanting region for enhancing a well doping concentration in a surface of the semiconductor substrate using the gate as a mask;
(3) forming a first layer of a material the same as the gate on an entire surface of the gate oxide film including the gate to a fixed thickness;
(4) forming a lightly doped impurity region in the surface of the semiconductor substrate;
(5) forming a second layer of a material having a resistivity lower than the gate on an entire surface of the first layer, and patterning the first layer of a material the same as the gate and the second layer of a material having a resistivity lower than the gate to form a first gate sidewall and second gate sidewalls; and
(6) forming a gate protection insulating layer on an entire surface having the gate and the first and second gate sidewalls formed thereon, and injecting impurity ions heavily to form heavily doped impurity regions in the surface of the semiconductor substrate.
14. The method for fabricating a low-resistance transistor as claimed in claim 13, wherein the gate and the first gate sidewall are formed of poly-silicon.
15. The method for fabricating a low-resistance transistor as claimed in claim 13, wherein the first layer of a material the same as the gate and the second layer of a material having a resistivity lower than the gate are simultaneously patterned so that the first gate sidewall is formed to have vertical patterns and horizontal patterns and the second gate sidewalls are formed to have round surfaces at both sides of the gate.
16. The method for fabricating a low-resistance transistor as claimed in claim 15, wherein the second gate sidewalls have a top formed not higher than the top of the first gate sidewall, and an outside edge of a bottom of the second gate sidewall is aligned with the horizontal pattern of the first gate sidewall.
17. The method for fabricating a low-resistance transistor as claimed in claim 13, wherein the material having a resistivity lower than the gate is tungsten.
18. The method for fabricating a low-resistance transistor as claimed in claim 13, wherein the halo ion implanting region is formed in a location deeper than the lightly doped impurity region but lower than the heavily doped impurity region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semi-underground waste system, comprising:
a utility chamber that is partially installed below a surface of ground,
a lid, removably attached to the utility chamber, that covers an opening in a portion of the utility chamber that is above the surface of the ground, and
a liner that stores waste and that includes one or more reinforcement components, the liner being located inside the utility chamber and being attached to the lid via the opening,
the one or more reinforcement components being of sufficient strength to preclude the liner from expanding or becoming stuck in the utility chamber after the waste is inserted in the liner or when the lid is removed from the utility chamber to dispose of the waste.
2. The semi-underground waste system of claim 1, where the utility chamber is made of precast concrete, an amount of weight of the precast concrete enabling the utility chamber to remain installed below the surface of the ground.
3. The semi-underground waste system of claim 1, where the utility chamber corresponds to a modified manhole that can be used in a water system or sewage system, the modified manhole not having any rungs of a ladder installed and including at least one of:
a first end that corresponds to the opening, or
a second end that is closed to preclude the waste from seeping into the ground, or water
or debris, from the ground, from entering the utility chamber.
4. The semi-underground waste system of claim 1, where the lid includes a substructure to at least one of:
enable the liner to be attached to the lid and removed from the utility chamber when the lid is removed from the utility chamber,
prevent the lid from distorting when waste is inserted in the liner, or
prevent the lid from distorting when the lid and the liner are removed from the utility chamber.
5. The semi-underground waste system of claim 1, where the lid includes one or more depressions to at least one of:
prevent the lid from distorting when waste is inserted in the liner, or
prevent the lid from distorting when the lid and the liner are removed from the utility chamber.
6. The semi-underground waste system of claim 1, where the lid includes a substructure to which the liner is attached, the substructure including one or more of:
a lifting ring with which to remove the lid from the utility chamber, or
one or more members attached to the lifting ring and to which the liner is attached.
7. The semi-underground waste system of claim 1, where the liner is made of at least one of:
a flash spun, high-density polyethylene fiber material,
a polyvinyl chlorideethylene vinyl acetate (PVCEVA) coated fabric material,
a polyethylene vinyl acetate (PEVA) coated fabric material,
a urethane coated fabric material, or
a polyurethane coated fabric material.
8. The semi-underground waste system of claim 1, where the liner includes one or more fasteners that enable the liner to be detached from the lid and a replacement liner to be attached to the lid within a time period that is less than a threshold,
the threshold corresponding to a particular time period after which a maintenance operation is to be scheduled.
9. The semi-underground waste system of claim 1, where the liner includes one or more fasteners, each of the one or more fasteners including a respective strap and a respective hardware component,
the respective strap including a first end and a second end, the first end being attached to the liner and the second end being attached to the respective hardware component, and
the respective hardware component enabling the respective strap to be attached to, or detached from, the lid within a time period that is less than a threshold,
the threshold corresponding to a particular time period after which a maintenance operation is to be scheduled
10. The semi-underground waste system of claim 1, where the one or more reinforcement components correspond to at least one of:
an extruded metal,
a cord,
a cable,
a strap,
a string,
a rope, or
a wire.
11. The semi-underground system of claim 1, where the one or more reinforcement components are at least one of:
attached to an exterior of the liner,
attached to an interior of the liner,
integrated between one or more plies associated with the liner.
12. The semi-underground waste system of claim 11, where the one or more reinforcement components correspond to at least one of:
a first shape associated with the perimeter of the liner,
a second shape associated with a spiral corresponding to the perimeter of the liner
a third shape that extends length-wise relative to a full or partial length of the liner, or
a combination of two or more of the first shape, the second shape, or the third shape.
13. The semi-underground waste system of claim 1, where the one or more reinforcement components correspond to a first density that enables the liner to apply a first amount of resistance to expansion of the liner after the waste is inserted in the liner,
the first density corresponding to a first quantity of the reinforcement components per unit of length of the liner.
14. The semi-underground waste system of claim 13, further comprising:
a particular liner to be used to replace the liner, the particular liner including one or more particular reinforcement components that correspond to a second density, the second density enabling the particular liner to apply a second amount of resistance to expansion of the particular liner after waste is inserted into the particular liner,
the second density being greater than the first density, and
the second amount of resistance being greater than the first amount of resistance.
15. A semi-underground waste system, comprising:
a utility chamber that includes a first portion and a second portion, the first portion being installed at or below a surface of ground, and the second portion being installed above the surface of the ground and including an opening that permits access to the first portion and the second portion,
a lid that covers the opening when the lid is removably attached to the second portion, and
a liner to store waste, the liner being located inside of the utility chamber and attached to the lid to permit the liner and the stored waste to be removed from the utility chamber when the lid is removed from the second portion, the liner including at least one of:
one or more reinforcements of sufficient strength to preclude the liner from becoming stuck in the utility chamber when the liner is at or near capacity to store the waste, or
one or more fasteners that enable the liner to be removed and replaced within a first time period that is less than a second time period to remove and replace a particular liner associated with a conventional semi-underground waste system.
16. The semi-underground waste system of claim 15, where the one or more reinforcements are of sufficient strength to at least one of:
preclude the liner from expanding to conform to one or more dimensions inside the utility chamber when the liner is at or near the capacity to store the waste.
17. The semi-underground waste system of claim 15, where each fastener, of the one or more fasteners, includes a strap and hardware, the strap and hardware enabling the liner to be:
attached to the lid by connecting the strap to the lid and engaging the hardware, and
detached from the lid by disengaging the hardware and disconnecting the strap from the lid.
18. The semi-underground waste system of claim 15, where each fastener, of the one or more fasteners, includes a flap and an adhesive, the strap and adhesive enabling the liner to be:
attached to the lid by wrapping the flap around a component of the lid and bonding the flap to the liner using the adhesive, and
detached from the lid by cutting the flap to release the flap from the component.
19. The semi-underground waste system of claim 15, where the utility chamber includes a seal between the first portion and the second portion, the seal precluding:
ground water, outside the utility chamber, from entering the utility chamber, or
the waste from entering the groundwater.
20. The semi-underground waste system of claim 15, where the utility chamber is made of a pre-cast concrete monolithic body that precludes:
ground water, outside the utility chamber, from entering the utility chamber, or
the waste from entering the groundwater.
21. A semi-underground waste device, comprising:
a liner that is made of a flexible material to store waste, the liner including a plurality of fasteners that are attached to an open end of the liner;
a lid to which the liner is attached by the plurality of fasters and that covers the open end of the liner, the plurality of fasteners enabling the liner to be detached from the lid and replaced within a first time period that is less than a second time period during which a conventional liner is removed and replaced from a conventional semi-underground waste system; and
a utility chamber, partially installed below ground, that includes an opening above the ground through which:
the liner can be inserted into the utility chamber when the lid is placed over the opening, or
the liner and the stored waste can be removed from the utility chamber when the lid is removed from the opening.
22. The semi-underground waste device of claim 21, where the flexible material includes one or more plies, at least one ply, of the one or more plies being environmentally compatible, breathable and resistant to water penetration.
23. The semi-underground waste device of claim 21, where the liner includes one or more heat welded seams.
24. The semi-underground waste device of claim 21, where the liner includes one or more reinforcements of sufficient strength to preclude the liner from becoming stuck in the utility chamber when the liner is at or near capacity to store the waste.
25. The semi-underground waste device of claim 24, where the flexible material and the one or more reinforcements enable the liner to be collapsed in a manner that permits the collapsed liner and one or more other collapsed liners to be stored, packaged or transported in a same amount of volume as the liner prior to being collapsed.
26. The semi-underground waste device of claim 21, where the utility chamber includes a lower portion and one or more upper portions, the lower portion including a first end that is closed to prevent water or debris from entering the utility chamber from the ground
some or all of the lower portion being installed below the ground, and
each of the one or more upper portions being stacked on a second end, of the lower portion, that is open to enable the liner to be inserted into the lower portion via the one or more upper portions.
27. The semi-underground waste device of claim 21, where at least one of the liner, the lid, or the utility chamber includes advertising content.