1. A method for dynamically highlighting repetitive text in electronic documents, the method comprising:
obtaining, by one or more computer processors, one or more user preferences related to a user reading an electronic document;
determining, by one or more computer processors, whether the electronic document contains one or more repetitive text associations, wherein a repetitive text association is data that provides one or more indications of repetitive text segments interspersed within a document;
in response to determining that the electronic document contains one or more repetitive text associations, identifying, by one or more computer processors, one or more repetitive text segments in the electronic document corresponding to the one or more repetitive text associations;
determining, by one or more computer processors, a time duration expended by the user reading an instance of the identified one or more repetitive text segments within the electronic document, wherein determining a time duration expended by the user reading an instance of the identified one or more repetitive text segments within the electronic document comprises:
determining, by one or more computer processors, that a location of the user within the electronic document is at a location of one of the identified one or more repetitive text segments;
storing, by one or more computer processors, a time duration; wherein the stored time duration includes one or more of:
a time duration expended by the user reading the instance of the identified one or more repetitive text segments;
a timestamp; and
the location of the instance of the identified one or more repetitive text segments; and
determining, by one or more computer processors, one or more trends related to the user reading one or more instances of the identified one or more repetitive text segments corresponding to the repetitive text association based on one or more of:
one or more obtained user preferences related to analyzing stored time durations for the repetitive text association;
one or more default preferences associated with the electronic document; and
a sequence in which the user read the one or more instances of the identified one or more repetitive text corresponding to the repetitive text association;
highlighting, by one or more computer processors, the identified one or more repetitive text segments within the electronic document based one or more obtained user preferences and one or more subsequent instances of the identified repetitive text segments corresponding to the repetitive text association within the electronic document based on one or more of:
one or more obtained user preferences associated with highlighting repetitive text associations within the electronic document;
one or more default preferences associated with the electronic document;
one or more determined trends associated with stored time durations corresponding to the repetitive text association; and
the sequence in which the one or more subsequent instances of the identified one or more repetitive text segments is read by the user; and
determining, by one or more computer processors, that the user has previously read the electronic document;
retrieving, by one or more computer processors, stored time duration information for one or more repetitive text associations of the previously read electronic document, by the user;
determining, by one or more computer processors, a current time stamp;
determining, by one or more computer processors, one or more time duration deviations between the current time stamp and the retrieved time duration information for one or more repetitive text associations of the previously read electronic document by the user; and
adjusting, by one or more computer processors, the highlighting of the identified one or more repetitive text segments corresponding to the one or more repetitive text associations based on the determined one or more time duration deviations.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A hydrogen gas sensitive semiconductor sensor, comprising:
a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
a semiconductor layer;
an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer; and
a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 \u03bcm.
2. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the surface area of the outer surface is at least 500% larger than the total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface.
3. The hydrogen gas sensitive semiconductor sensor according to claim 2, wherein the surface area of the outer surface is at Least 5000% larger than the total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface.
4. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein an upper surface of the catalytic metal layer is assigned a surface-enlarging structure.
5. The hydrogen gas sensitive semiconductor sensor according to claim 4, wherein the inner surface comprises one hydrogen atom adsorption surface portion.
6. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor comprises at least two hydrogen atom adsorption inhibiting material layers and wherein all of the hydrogen atom adsorption inhibiting material layers comprise similar hydrogen atom adsorption inhibiting material.
7. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor comprises at least two hydrogen atom adsorption inhibiting material layers and wherein at least two of the hydrogen atom adsorption inhibiting material layers comprise different hydrogen atom adsorption inhibiting materials.
8. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the hydrogen atom adsorption inhibiting material comprises a non-catalytic metal or a non-catalytic alloy.
9. The hydrogen gas sensitive semiconductor sensor according to claim 8, wherein the hydrogen atom adsorption inhibiting material comprises aluminum, an aluminum alloy or chromium.
10. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor is a metal-insulator-semiconductor field-effect device.
11. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor is a Schottky-barrier device.
12. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor detects a presence of hydrogen gas molecules in a gas sample.
13. The hydrogen gas sensitive semiconductor sensor according to claim 1, wherein the sensor measures a concentration of hydrogen gas molecules in a gas sample.
14. A probe for detection of hydrogen gas, comprising:
a hydrogen gas sensitive semiconductor sensor comprising:
a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
a semiconductor layer;
an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer; and
a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 \u03bcm.
15. A hydrogen gas detection system, comprising:
a probe comprising a hydrogen gas sensitive semiconductor sensor comprising
a catalytic metal layer comprising an outer surface and an inner surface, the outer surface being arranged to freely communicate with the ambient atmosphere, the inner surface comprising at least one hydrogen atom adsorption surface portion, a surface area of the outer surface being at least 100% larger than a total surface area of the at least one hydrogen atom adsorption surface portion of said inner surface, the inner surface further comprising at least one hydrogen atom adsorption inhibited surface portion;
a semiconductor layer;
an insulator layer arranged between the catalytic metal layer and the semiconductor layer, such that the at least one hydrogen atom adsorption surface portion of the catalytic metal layer is arranged adjacent to said insulator layer; and
a hydrogen atom adsorption inhibiting material layer sandwiched between each hydrogen atom adsorption inhibited surface portion and the insulator layer, whereby each hydrogen atom adsorption inhibited surface portion is arranged adjacent to a hydrogen atom adsorption inhibiting material layer and whereby a thickness of the hydrogen atom adsorption inhibiting material layer is 0.001-0.3 \u03bcm; and
a measuring unit.
16. The hydrogen gas detection system according to claim 15, further comprising:
a hydrogen gas source.
17. The hydrogen gas detection system according to claim 15, further comprising:
a gas controller.
18. The hydrogen gas detection system according to claim 15, further comprising:
a fixture for a test object.
19. The hydrogen gas detection system according to claim 15, further comprising:
a gas pressure regulator.
20. The hydrogen gas detection system according to claim 15, further comprising:
a fixture controller.