1. A semiconductor device, comprising:
a substrate;
a first semiconductor chip and a second semiconductor chip provided on said substrate; and
a heat sink fixed onto said first semiconductor chip,
wherein a height of a top surface of said first semiconductor chip from said substrate is lower than a height of a top surface of said second semiconductor chip from said substrate, and
wherein said heat sink is provided only above said first semiconductor chip out of said first and second semiconductor chips.
2. The semiconductor device according to claim 1,
wherein said first and second semiconductor chips are a logic circuit and a memory circuit, respectively.
3. The semiconductor device according to claim 1,
wherein said first semiconductor chip is a bare chip, and said second semiconductor chip is a packaged chip.
4. The semiconductor device according to claim 1,
wherein said heat sink is flat plate-shaped.
5. The semiconductor device according to claim 1,
wherein a height of a top surface of said heat sink from said substrate is substantially the same as a height of a top surface of said second semiconductor chip from said substrate.
6. The semiconductor device according to claim 1, further comprising a resin post provided between said substrate and said heat sink,
wherein one end and the other end of said resin post are connected to said substrate and said heat sink, respectively.
7. The semiconductor device according to claim 1,
wherein said second semiconductor chip includes an external electrode terminal, and is connected through said external electrode terminal to said substrate.
8. The semiconductor device according to claim 1,
wherein said heat sink has a geometry of a rectangle partially having a defected portion; and
said second semiconductor chip is disposed in said defected portion.
9. The semiconductor device according to claim 8,
wherein no sharp corner in a planar view is included in a boundary between said heat sink and said defected portion.
10. The semiconductor device according to claim 8,
wherein a plurality of said second semiconductor chips are provided on said substrate; and
a portion of said heat sink extends to a space between said second semiconductor chips.
11. The semiconductor device according to claim 10,
wherein said heat sink includes a base and a protruding portion protruded from said base;
said base is located above said first semiconductor chip; and
said protruding portion extends to said space between said second semiconductor chips.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of inspecting a structure, comprising:
preparing a plurality of preliminary spectrums each including a plurality of reference diffraction intensities, the reference diffraction intensities corresponding to critical dimensions of a plurality of reference structures;
obtaining a linear spectrum based on the preliminary spectrums in a critical dimension range;
radiating first light onto one or more measurement structures;
measuring one or more measurement diffraction intensities of the first light diffracted by the measurement structures; and
obtaining critical dimensions of the measurement structures based on the measurement diffraction intensities and the linear spectrum.
2. The method of claim 1, further comprising obtaining a correlation factor based on the linear spectrum.
3. The method of claim 1, further comprising:
radiating second light onto the reference structures, the reference structures having known critical dimensions; and
measuring the reference diffraction intensities of the second light diffracted by the plurality of reference structures,
wherein the linear spectrum corresponds to one of a plurality of wavelength and polarization mode pairs of the second light.
4. The method of claim 3, wherein each of the preliminary spectrums corresponds to a different one of the wavelength and polarization mode pairs of the second light.
5. The method of claim 3, wherein the wavelength and polarization mode of the second light corresponding to the linear spectrum is substantially the same as a wavelength and polarization mode of the first light.
6. The method of claim 1, wherein the linear spectrum has a steepest slope of a plurality of linear spectrums in the critical dimension range.
7. The method of claim 1, further comprising:
obtaining a distribution of the measurement diffraction intensities of the first light diffracted by the measurement structures; and
obtaining a distribution of the critical dimensions of the measurement structures.
8. The method of claim 1, wherein the measurement structures include pattern structures.
9. The method of claim 1, wherein the critical dimension range is a set critical dimension range.
10. A method of inspecting a structure, comprising:
preparing a plurality of preliminary spectrums each including a plurality of reference diffraction intensities, each of the plurality of spectrums corresponding to a thickness of a different plurality of reference structures;
obtaining a linear spectrum based on the preliminary spectrums in a critical dimension range;
radiating light onto one or more measurement structures;
measuring one or more measurement diffraction intensities of the light diffracted by the measurement structures; and
obtaining thicknesses of the measurement structures based on the measurement diffraction intensities and the linear spectrum.
11. The method of claim 10, wherein the measurement structures include layer structures and pattern structures.
12. The method of claim 10, further comprising:
obtaining a distribution of the measurement diffraction intensities of the light diffracted by the measurement structures; and
obtaining a distribution of the thicknesses of the measurement structures.
13. The method of claim 12, further comprising:
generating a wafer map by dividing an area including the measurement structures into one or more regions corresponding to positions on a substrate at which the measurement structures are located, assigning the regions at least one of a brightness and color based on the measurement diffraction intensities corresponding to the measurement structures located in the regions, and generating a graphical representation of the substrate and the regions.
14. A method of inspecting a structure, comprising:
generating a first data set including a first diffraction intensity and a second diffraction intensity, the first and second diffraction intensities corresponding to critical dimensions of first and second structures, respectively, on a substrate;
generating a second data set based on at least part of the first data set in a critical dimension range;
measuring a fourth diffraction intensity corresponding to a critical dimension of a fourth structure in the critical dimension range; and
determining a magnitude of a physical property of the fourth structure based on the fourth diffraction intensity and the second data set.
15. The method of claim 14, wherein the physical property is one of the critical dimension of the fourth structure and a thickness of the fourth structure.
16. The method of claim 15, wherein the first data set corresponds to at least one of a thickness and properties of light, the properties of light including a wavelength and a polarization of the light.
17. The method of claim 16, wherein the generating of the second data set includes applying a linear fitting method to the at least part of the first data set.
18. The method of claim 14, wherein the fourth structure is on a different substrate than the first through third structures.
19. The method of claim 14, wherein the critical dimension range is a set critical dimension range.
20. The method of claim 16, wherein the measurement structures include at least one of layer structures and pattern structures.