1-8. (canceled)
9. A semiconductor integrated circuit device comprising an element isolation region and a first active region defined by the element isolation region in a semiconductor substrate,
wherein the first active region is formed in the semiconductor substrate and includes a first well of a first conductivity type;
wherein the first active region further includes a first region which extends in a first direction and in which a plurality of MISFETs is formed, and a second region which extends in the first direction and feeds power to the MISFETs;
wherein each gate electrode of the MISFETs extends in a second direction intersecting the first direction;
wherein a plurality of first plugs is formed in each of the gate electrodes of the MISFETs, respectively; and
wherein in the second region, a plurality of second plugs is placed along the first direction, and the second plug is not formed within a range less than 2.5 times a diameter of the first plug from a center of the first plug.
10. The semiconductor integrated circuit device according to claim 9,
wherein the second plugs are placed at equal intervals over the second region except a portion within a range smaller than 2.5 times the diameter of the first plug from the center of the first plug.
11. The semiconductor integrated circuit device according to claim 9,
wherein a potential fed to the gate electrode via the first plug and a potential fed to the second region via the first plug are mutually different potentials.
12. A semiconductor integrated circuit device comprising an element isolation region, and a first active region and second active region defined by the element isolation region, in a semiconductor substrate, wherein the first active region is formed in the semiconductor substrate and includes a p-type first well;
wherein the first active region further includes a first region which extends in a first direction and in which a plurality of n-channel type MISFETs is formed, and a second region which extends in the first direction and feeds the n-channel type MISFETs;
wherein each gate electrode of the n-channel MISFETs extends in a second direction intersecting with the first direction;
wherein a plurality of first plugs is formed in each of the gate electrodes of the n-channel type MISFETs, respectively;
wherein in the second region, a plurality of second plugs is placed along the first direction;
wherein the second active region is formed in the semiconductor substrate and includes an n-type second well;
wherein the second active region further includes a third region which extends in the first direction and in which a plurality of p-channel type MISFETs is formed, and a fourth region which extends in the first direction and feeds the p-channel type MISFETs;
wherein each gate electrode of the p-channel type MISFETs extends in the second direction;
wherein a plurality of third plugs is formed in each of the gate electrodes of the p-channel type MISFETs, respectively;
wherein in the fourth region, a plurality of fourth plugs is placed along the first direction;
wherein the first to fourth regions are arranged in the order of the second region, the first region, the third region, and the fourth region in the second direction;
wherein the second plug is not formed within a range smaller than 2.5 times a diameter of the first plug from a center of the first plug; and
wherein the fourth plug is not formed within a range smaller than 2.5 times the diameter of the third plug from a center of the third plug.
13. The semiconductor integrated circuit device according to claim 12,
wherein the second plugs are placed at equal intervals over the second region except a portion within a range smaller than 2.5 times the diameter of the first plug from the center of the first plug, and
wherein the fourth plugs are placed at equal intervals over the fourth region except a portion within a range smaller than 2.5 times the diameter of the third plug from the center of the third plug.
14. The semiconductor integrated circuit device according to claim 12,
wherein a potential fed to the gate electrode via the first plug and a potential fed to the second region via the first plug are mutually different potentials, and
wherein a potential fed to the gate electrode via the third plug and a potential fed to the fourth region via the fourth plug are mutually different potentials.
15. The semiconductor integrated circuit device according to claim 12, further comprising:
a first wiring in a first layer connected to the second region via the second plug and extending in the first direction; and
a second wiring in the first layer connected to the fourth region via the fourth plug and extending in the first direction;
wherein the six first layer wirings can pass through between the first wiring and the second wiring.
16. The semiconductor integrated circuit device according to claim 12,
wherein in the second direction, widths of the second region and the fourth region are a width through which the six second layer wirings can pass when the second layer wiring is formed using the minimum feature size
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A battery comprising:
a first rolled element including a first anode layer and a first cathode layer, said first element generating, in use, a first magnetic field;
a second rolled element including a second anode layer and a second cathode layer, said second element generating, in use, a second magnetic field;
a casing;
said first rolled element and said second rolled element arranged within said casing so that said first magnetic field is proximate to said second magnetic field and oriented in an opposite polarity;
a first anode terminal on said casing;
a first anode wire connecting said first anode terminal to said first anode layer;
a first cathode terminal on said casing;
a first cathode wire connecting said first cathode terminal to said first cathode layer;
a second anode terminal on said casing;
a second anode wire connecting said second anode terminal to said second anode layer, said second anode wire arranged to be symmetrical, through a transverse plane separating said first rolled element and said second rolled element, with said first anode wire;
a second cathode terminal on said casing; and
a second cathode wire connecting said second cathode terminal to said second cathode layer, said second cathode wire arranged to be symmetrical, through said transverse plane, with said first cathode wire.
2. The battery of claim 1 wherein said first rolled element has a first thickness and said second rolled element has a second thickness, said second thickness being greater than said first thickness.
3. The battery of claim 1 wherein said first rolled element and said second rolled element are arranged within said casing so that a north magnetic pole of said first magnetic field is adjacent to a north magnetic pole of said second magnetic field.
4. The battery of claim 1 wherein said first rolled element and said second rolled element are arranged within said casing so that a south magnetic pole of said first magnetic field is adjacent to a south magnetic pole of said second magnetic field.
5. The battery of claim 1 wherein said casing further comprises:
a first cathode terminal;
a first cathode terminal conductor connecting said first cathode terminal to said first cathode layer;
a second cathode terminal conductor connecting said first cathode terminal to said second cathode layer;
an anode terminal;
a first anode terminal conductor connecting said anode terminal to said first anode layer;
a second anode terminal conductor connecting said anode terminal to said second anode layer;
a second cathode terminal;
a third cathode terminal conductor connecting said second cathode terminal to said first cathode layer; and
a fourth cathode terminal conductor connecting said second cathode terminal to said second cathode layer.
6. The battery of claim 1 wherein said first magnetic field and said second magnetic field are substantially equal in magnitude.
7. The battery of claim 1 further comprising a third rolled element including a third anode layer and a third cathode layer, said third element generating, in use, a third magnetic field; and
a fourth rolled element including a fourth anode layer and a fourth cathode layer, said fourth element generating, in use, a fourth magnetic field;
said third rolled element and said fourth rolled element arranged within said casing so that said third magnetic field is proximate to said fourth magnetic field and oriented in an opposite polarity.
8. The battery of claim 7 wherein said third rolled element and said fourth rolled element are arranged within said casing so that a north magnetic pole of said third magnetic field is adjacent to a north magnetic pole of said fourth magnetic field.
9. The battery of claim 7 wherein said third rolled element and said fourth rolled element are arranged within said casing so that a south magnetic pole of said third magnetic field is adjacent to a south magnetic pole of said fourth magnetic field.
10. The battery of claim 7 wherein said first rolled element and said second rolled element are arranged within said casing so that a north magnetic pole of said first magnetic field is adjacent to a north magnetic pole of said second magnetic field.
11. The battery of claim 10 wherein said third rolled element and said fourth rolled element are arranged within said casing so that a south magnetic pole of said third magnetic field is adjacent to a south magnetic pole of said fourth magnetic field.
12. The battery of claim 11 wherein said second rolled element and said third rolled element are arranged within said casing so that said south magnetic pole of said second magnetic field is adjacent to said north magnetic pole of said third magnetic field.
13. The battery of claim 10 wherein said third rolled element and said fourth rolled element are arranged within said casing so that a north magnetic pole of said third magnetic field is adjacent to a north magnetic pole of said fourth magnetic field.
14. The battery of claim 13 wherein said second rolled element and said third rolled element are arranged within said casing so that said south magnetic pole of said second magnetic field is adjacent to said south magnetic pole of said third magnetic field.