1. A ferrite magnet powder represented by the composition formula AFe2+a(1-x)MaxFe3+bO27, wherein A represents at least one element selected from the group consisting of Sr, Ba, and Pb; and M represents at least one element selected from the group consisting of Zn, Co, Mn, and Ni,
characterized in that 0.05\u2266x\u22660.80, 1.5\u2266a\u22662.2, and 12\u2266b\u226617.
2. The ferrite magnet powder according to claim 1, characterized in that a crystal phase identified by X-ray diffraction comprises a W phase as a main phase.
3. The ferrite magnet powder according to claim 1, characterized in that 0.1\u2266x\u22660.70 in said composition formula.
4. The ferrite magnet powder according to claim 1, characterized in that 1.7\u2266a\u22662.2 in said composition formula.
5. The ferrite magnet powder according to claim 1, characterized in that 14\u2266b\u226617 in said composition formula.
6. The ferrite magnet powder according to claim 1, characterized in that said M is Zn.
7. The ferrite magnet powder according to claim 1, characterized in that said ferrite magnet powder has a saturation magnetization of 5.0 kG or more.
8. The ferrite magnet powder according to claim 1, characterized in that said ferrite magnet powder has a saturation magnetization of 5.1 kG or more.
9. A sintered magnet represented by the composition formula AFe2+a(1-x)MaxFe3+bO27, wherein A represents at least one element selected from the group consisting of Sr, Ba, and Pb; and M represents at least one element selected from the group consisting of Zn, Co, Mn, and Ni, characterized in that 0.05\u2266x\u22660.80, 1.5\u2266a\u22662.2, and 12\u2266b\u226617.
10. A sintered magnet comprising, at a molar ratio of 50% or more, a W-type hexagonal ferrite comprising an element A, (wherein A represents at least one element selected from the group consisting of Sr, Ba, and Pb), Fe2+, and Fe3+, characterized in that the Fe2+ site of said W-type hexagonal ferrite is partially substituted with an element M, wherein M represents at least one element selected from the group consisting of Zn, Co, Mn, and Ni.
11. The sintered magnet according to claim 9 or 10, characterized in that said sintered magnet has a saturation magnetization of 5.1 kG or more.
12. The sintered magnet according to claim 9 or 10, characterized in that said sintered magnet has a saturation magnetization of 5.0 kG or more and a squareness of 80% or more.
13. The sintered magnet according to claim 9 or 10, characterized in that said sintered magnet has a saturation magnetization of 5.0 kG or more and a residual magnetic flux density of 4.2 kG or more.
14. The sintered magnet according to claim 9 or 10, characterized in that said element M is Zn.
15. The sintered magnet according to claim 9 or 10, characterized in that said element A is Sr.
16. The sintered magnet according to claim 9 or 10, characterized in that said element A is Sr and Ba.
17. A bonded magnet comprising:
a ferrite magnet powder represented by the composition formula AFe2+a(1-x)MaxFe3+bO27, wherein A represents at least one element selected from the group consisting of Sr, Ba, and Pb; and M represents at least one element selected from the group consisting of Zn, Co, Mn, and Ni, and wherein 0.05\u2266x\u22660.80, 1.5\u2266a\u22662.2, and 12\u2266b\u226617; and
a resin phase that disperses and retains said ferrite magnet powder.
18. A magnetic recording medium comprising a substrate and a magnetic layer formed on said substrate,
characterized in that said magnetic layer has a ferrite structure represented by the composition formula AFe2+a(1-x)MaxFe3+bO27, wherein A represents at least one element selected from the group consisting of Sr, Ba, and Pb; and M represents at least one element selected from the group consisting of Zn, Co, Mn, and Ni, and wherein 0.05\u2266x\u22660.80, 1.5\u2266a\u22662.2, and 12\u2266b\u226617.
19. The magnetic recording medium according to claim 18, characterized in that said magnetic layer has a saturation magnetization of 5.2 kG or more.
20. The magnetic recording medium according to claim 18, characterized in that said M is Zn and said magnetic layer has a saturation magnetization of 5.2 kG or more and a residual magnetic flux density of 4.5 kG or more.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An apparatus for panelwafer molding, comprising:
a platform for carrying a redistribution tool having dice on a lower base with a first separation layer applied thereon for placing dice, wherein an alignment pattern formed on said first separation layer;
an upper molding base with a second separation layer on the bottom surface;
a vacuum chamber coupled to said platform to provide predetermined processing condition;
a cleaning unit coupled to said platform; and
a microprocessor for controlling the molding process.
2. The apparatus of claim 1, further comprising a curing unit coupled to said platform.
3. The apparatus of claim 1, further comprising a component for mechanical andor optical alignment.
4. The apparatus of claim 1, wherein said upper molding base is round or rectangular.
5. The apparatus of claim 1, wherein said microprocessor is programmed for controlling thickness and flatness of a molding layer.
6. The apparatus of claim 1, wherein the magnitude and time of force applied by said upper molding base is controlled by program.
7. The apparatus of claim 1, wherein said cleaning unit cleans the active surface of said die by solution.
8. A method for panelwafer molding, comprising:
providing a base with a first separation layer for placing die,
applying a molding layer covering said die and filling into the space between said die,
bonding a second separation layer of an upper molding base with on the upper
surface of the molding layer by vacuum panel bonding,
curing said molding material for forming a panel;
shaping said panel;
separating said panel form said first separating layer of said base;
cleaning the active surface of said dice;
separating said panel form said second separating layer of said upper base panel.
9. The method of claim 8, wherein said molding layer is formed by vacuum printing.
10. The method of claim 8, wherein said molding layer is liquid compound, liquid epoxy, resin, silicon rubber with or without filter.
11. The method of claim 8, wherein said vacuum bonding is performed in vacuum chamber.
12. The method of claim 8, wherein the thickness and flatness of said molding layer is controlled by program.
13. The method of claim 8, wherein said bonding is controlled by mechanical andor optical alignment process.
14. The method of claim 8, wherein said bonding is controlled by program to control the magnitude and time of force applied.
15. The method of claim 8, wherein said shaping shapes said panel into rectangular or round shape.
16. The method of claim 8, wherein said cleaning is performed with solution.