1. A method for fabricating a semiconductor device characterized by comprising:
a resin sealing step of loading a substrate on which semiconductor elements having protruding electrodes are formed, and supplying a sealing resin to positions of the protruding electrodes so as to form a resin layer which seals the protruding electrodes and the substrate;
a protruding electrode exposing step of exposing at least ends of the protruding electrodes from the resin layer; and
a separating step of cutting the substrate together with the resin layer so that the semiconductor elements are separated from each other.
2. The method for fabricating the semiconductor device as claimed in claim 1, characterized in that the sealing resin used in the resin sealing step has an amount which causes the resin layer to have a height approximately equal to that of the protruding electrodes.
3. The method for fabricating the semiconductor device as claimed in claim 1 or 2, characterized in that the resin sealing step disposes a film between the protruding electrodes and the mold, which thus contacts the sealing resin through the film.
4. The method for fabricating the semiconductor device as claimed in any of claims 1 to 3, characterized in that:
the mold used in the resin sealing step comprises an upper mold which can be elevated, and a lower mold having a first lower mold half body which in the film when the resin layer is formed by using the mold; and
the film is detached from the resin layer in the protruding electrode exposing step so that the ends of the protruding electrodes can be exposed from the resin layer.
13. A mold for fabricating a semiconductor device characterized by comprising:
an upper mold which can be elevated; and
a lower mold having a first lower mold half body which is kept stationary and a second lower mold half body which is provided so as to surround the first lower mold half body and can be elevated with respect to the first lower mold half body,
a cavity being defined by a cooperation of the upper and lower molds and being filled with resin.
14. The mold for fabricating the semiconductor device as claimed in claim 13, characterized in that there is provided an excess resin removing mechanism is provided in the mold used in the resin sealing step,
wherein the excess resin removing mechanism removes excess resin and controls a pressure applied to the sealing resin in the mold.
15. The mold for fabricating the semiconductor device as claimed in claim 13 or 14, characterized in that there is provided an attachmentdetachment mechanism which attaches the substrate to a position of the first lower mold half body and detaches the substrate therefrom.
16. The mold for fabricating the semiconductor device as claimed in claim 15, characterized in that the attachmentdetachment mechanism comprises:
a porous member arranged in the position of the first lower mold half body onto which the substrate is loaded; and
an intakeexhaust device performing a gas suction and supply process for the porous member.
17. The mold for fabricating the semiconductor device as claimed in any of claims 13 through 16, characterized in that an area enclosed by the second lower mold half body is wider than an area of an upper portion of the first lower mold half body in a state in which the cavity is formed.
18. A semiconductor device characterized by comprising:
a semiconductor element having a surface on which protruding electrodes are directly formed; and
a resin layer which is formed on the surface of the semiconductor element and seals the protruding electrodes except for ends thereof.
19. The semiconductor device as claimed in claim 18, characterized in that there is provided a heat radiating member provided on a back surface of the semiconductor element opposite to the surface thereof on which the protruding electrodes are provided.
20. The method for fabricating the semiconductor devise as claimed in any of claims 1 to 12, characterized in that the sealing resin used in the resin sealing step comprises a plurality of sealing resins having different characteristics.
21. The method for fabricating the semiconductor device as claimed in claim 9 or 10, characterized in that there is provided a reinforcement plate to which the sealing resin is provided beforehand in the resin sealing step.
22. The method for fabricating the semiconductor device as claimed in claim 21, characterized in that:
a frame extending towards the substrate in a state in which the reinforcement plate is loaded onto the mold is formed to define a recess portion; and
the resin layer is formed on the substrate by using, as a cavity for resin sealing, the recess portion in the resin sealing step.
23. The method for fabricating the semiconductor device as claimed in any of claims 1 to 12, characterized in that a second resin layer is formed so as to cover a back surface of the substrate after or at the same time as the first, resin layer is formed, in the resin sealing step, on the surface of the substrate on which the protruding electrodes are arranged.
24. The method for fabricating the semiconductor device as claimed in any of claims 3 to 10, characterized in that:
the film used in the resin sealing step has projections located in positions corresponding to those of the protruding electrodes; and
the resin layer is formed in a state in which the projections are pressed against the protruding electrodes.
25. The method for fabricating the semiconductor device as claimed in any of claims 1 to 12 and 20 to 24, characterized in that:
an external connection protruding electrode
32. The method for fabricating the semiconductor device as claimed in any of claims 1 to 12 and 20 to 31, characterized in that positioning grooves are formed on a back surface of the resin layer or the substrate after the resin sealing step is executed and before the separating step is executed.
33. The method for fabricating the semiconductor device as claimed in claim 32, characterized in that the positioning grooves can be formed by subjecting the back surface to half scribing.
34. The method for fabricating the semiconductor device as claimed in any of claims 3 to 12 and 20 to 29, characterized in that:
the film used in the resin sealing step has projection or recess portions located in positions in which the film is not interfered with the projecting electrodes; and
recess or projection portions formed on the resin layer by the projection or recess portions are used for positioning after the resin sealing step is completed.
35. The method for fabricating the semiconductor device as claimed in any of claims 1 to 12 and 20 to 29, characterized in that the sealing resin is processed in positions in which positioning protruding electrodes are formed in order to discriminate the protruding electrodes and the positioning protruding electrodes from each other.
36. A semiconductor device characterized by comprising:
a semiconductor element having a surface on which external connection electrodes are provided semiconductor device as claimed in claim 44, characterized in that a frame having a cavity portion in which the semiconductor element is accommodated is provided when the wiring board is formed.
46. The method for fabricating the semiconductor device as claimed in claim 44 or 45, characterized in that a film having a detachability with respect to the sealing resin is provided in a position of the mold facing the wiring board, so that the mold contacts the sealing resin through the film.
47. The method for fabricating the semiconductor device as claimed in claim 44 or 45, characterized in that a plate member having a detachability with respect to the sealing resin is provided in a position of the mold facing the wiring board, so that the mold contacts the sealing resin through the plate member.
48. The method for fabricating the semiconductor device as claimed in claim 47, characterized in that the plate member is formed of a substance having a heat radiating performance.
49. The method for fabricating the semiconductor device as claimed in any of claims 44 to 48, characterized in that there is provided an excess resin removing mechanism is provided in the mold used in the resin sealing step,
wherein the excess resin removing mechanism removes excess resin and controls a pressure applied to the sealing resin in the mold.
50. The method for fabricating the semiconductor device as claimed in any of claims 44 to 49, characterized in that:
extending portions are formed to the wiring board so that the extending portions laterally extend from a position in which the semiconductor element is placed; and
a bending step of bending the extending portions is executed after the resin sealing step is completed and before the protruding electrode forming step is executed.
51. The method for fabricating the semiconductor device as claimed in any of claims 44 to 49, characterized in that:
extending portions are formed to the wiring board so that the extending portions laterally extend from a position in which the semiconductor element is placed;
a bending step of bending the extending portions is carried out before the resin sealing step is executed; and
the resin sealing step and the protruding electrode forming step are carried out after the bending step is executed.
52. The method for fabricating the semiconductor device as claimed in claim 50 or 51, characterized in that:
connection electrodes to be connected to the semiconductor element are formed to ends of the extending portions; and
an element connecting step of connecting the semiconductor element and the connection electrodes is executed after the bending step is carried out.
53. The method for fabricating the semiconductor device as claimed in claim 51, characterized in that the connection electrodes are arranged in an interdigital formation, and have curved semiconductor element or elements, the electrode plate having portions which are exposed from side surfaces of the sealing resin and function as external connection electrodes.
58. The semiconductor device as claimed in claim 57, characterized in that the semiconductor element or elements are connected to the electrode plate in a flip-chip bonding formation.
59. The semiconductor device as claimed in claim 57 or 58, characterized in that the electrode plate is exposed from a bottom surface of the sealing resin in addition to the side surfaces thereof, so that portions of the electrode plates exposed from the bottom surface function as external connection terminals.
60. The semiconductor device as claimed in claim 57 or 58, characterized in that protruding terminals are provided to the electrode plate, and are exposed from a bottom surface of the sealing resin, so that the protruding terminals function as external connection terminals.
61. The semiconductor device as claimed in claim 60, characterized in that the protruding terminals are portions of the electrode plate defined by plastic deformation.
62. The semiconductor device as claimed in claim 60, characterized in that the protruding terminals are the protruding electrodes arranged to the electrode plate.
63. The semiconductor device as claimed in any of claims 57 to 62 characterized in that the semiconductor element or elements are partially exposed from the sealing resin.
64. The semiconductor device as claimed in any of claims 57 to 63, characterized in that there is provided a heat radiating member in a position close to the semiconductor element or elements.
65. A method for fabricating a semiconductor device characterized by comprising:
an electrode plate forming step of forming a pattern on a metallic base so that an electrode plate is formed;
a chip mounting step of mounting semiconductor elements on the electrode plate and electrically connecting the semiconductor elements thereto;
a sealing resin forming step of forming a sealing resin which seals the semiconductor elements and the electrode plate; and
a cutting step of cutting the sealing resin and the electrode plate at boundaries between adjacent ones of the semiconductor elements so that the semiconductor devices are separated from each other.
66. The method for fabricating the semiconductor device as claimed in claim 65, characterized in that the pattern is formed in the electrode plate forming step by etching or press processing.
67. The method for fabricating the semiconductor device as claimed in claim 65 or 66, characterized in that the semiconductor elements are mounted, in the chip mounting step, on the electrode plate in a flip-chip bonding formation.
bumps arranged to the protruding terminals for forming the external connection terminals,
the semiconductor device being connected to the mounting board through the bumps.
72. A mounting arrangement for mounting the semiconductor device as claimed in any of claims 59 to 64 on a mounting board, characterized by comprising:
a mounting member including connection pins that are flexibly deformable and are located in positions corresponding to those of the external connection terminals, and a positioning member positioning the connection pins,
upper ends of the connection pins being connected to the external connection terminals of the semiconductor device, and lower ends thereof being connected to the mounting board.
73. A semiconductor device characterized by comprising:
a semiconductor device main body having a semiconductor element having a surface on which protruding electrodes are directly formed, and a resin layer which is formed on the surface of the semiconductor element and seals the protruding electrodes except for ends thereof;
an interposer to which the semiconductor device main body is attached, a wiring pattern to which the semiconductor device main body is connected being formed on a base member of the interposer;
an anisotropic conductive film which has an adhesiveness and a conductivity in a pressed direction and is interposed between the semiconductor device main body and the interposer, the anisotropic conductive film fixing the semiconductor device main body to the interposer and electrically connecting them; and interposer;
a conductive member which electrically connects the semiconductor device main body and the interposer; and
external connection terminals which are connected to the wiring pattern through holes formed in the base member and are arranged on a surface of the semiconductor device main body opposite to the surface on which the protruding electrodes are provided.
80. The semiconductor device as claimed claim 79, characterized in that the conductive member is a conductive paste.
81. The semiconductor device as claimed claim 79, characterized in that the conductive member comprises stud bumps.
82. The semiconductor device as claimed claim 79, characterized in that the conductive member comprises flying leads, which are integrally formed with the wiring pattern and bypasses the adhesive so as to be connected to the protruding electrodes.
83. The semiconductor device as claimed clam 82, characterized in that connections of the protruding electrodes and the flying leads are sealed by resin.
84. The semiconductor device as claimed claim 79, characterized in that the conductive member comprises:
connection pins that are flexibly deformal and are located in positions corresponding to those the protruding electrodes; and
a positioning member positioning the
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A composition comprising:
(a) a multiparticulate modified release composition comprising hydrocodone or a pharmaceutically acceptable salt thereof, enantiomer thereof, derivative thereof, or a mixture thereof, and comprising:
(i) a first component comprising a first population of hydrocodone comprising particles; and
(ii) at least one subsequent component, each subsequent component comprising a subsequent population of hydrocodone-comprising particles, wherein the at least one subsequent population of hydrocodone-comprising particles further comprises a modified release coating, a modified release matrix material, or a combination of a modified release coating and a modified release matrix material, such that the composition following oral delivery to a subject delivers the at least one hydrocodone, or a salt or derivative thereof, in a bimodal or multimodal manner; and
(b) a nanoparticulate naproxen composition comprising:
(i) particles of naproxen or a salt or derivative thereof having an effective average particle size of less than about 2000 nm; and
(ii) at least one surface stabilizer.
2. The composition of claim 1, wherein the multiparticulate modified release composition comprises a first component and one subsequent component.
3. The composition of claim 2, wherein the first component is an immediate release component and the subsequent component is a modified release component.
4. The composition of claim 3, wherein the modified release component comprises particles having a modified release coating.
5. The composition of claim 3, wherein the modified release component comprises a modified release matrix material.
6. The composition of claim 1, wherein for the multiparticulate modified release composition, the first population of hydrocodone-comprising particles and the at least one subsequent population of hydrocodone-comprising particles comprise the same hydrocodone.
7. The composition of claim 1, wherein for the multiparticulate modified release composition, the first population of hydrocodone-comprising particles and the at least one subsequent population of hydrocodone-comprising particles comprise different hydrocodones.
8. The composition of claim 1, wherein for the multiparticulate modified release composition, the first population of hydrocodone-comprising particles comprises two or more hydrocodones.
9. The composition of claim 1, wherein for the multiparticulate modified release composition, the at least one subsequent population of hydrocodone-comprising particles contains two or more hydrocodones.
10. The composition of claim 1, wherein for the multiparticulate modified release composition, the hydrocodone comprises substantially one optically pure enantiomer or a mixture, racemic or otherwise, of enantiomers.
11. The composition of claim 1, wherein for the multiparticulate modified release composition, at least one of the components further comprises an enhancer.
12. The composition of claim 1, wherein for the multiparticulate modified release composition, the amount of hydrocodone comprised in the first and subsequent components is the same.
13. The composition of claim 1, wherein for the multiparticulate modified release composition, the amount of hydrocodone comprised in the first component is a minor portion of the hydrocodone comprised in the composition and the amount of hydrocodone comprised in the subsequent components is a major portion of the hydrocodone comprised in the composition.
14. The composition of claim 13, wherein for the multiparticulate modified release composition, the first population of hydrocodone comprising particles comprises from about 10% to about 40% of a hydrocodone comprised in the composition and the subsequent populations of hydrocodone comprising particles comprise from about 60% to about 90% of the hydrocodone comprised in the composition
15. The composition of claim 13, wherein for the multiparticulate modified release composition, the first population of hydrocodone comprising particles comprises about 20% of the hydrocodone comprised in the composition and the subsequent populations of hydrocodone comprising particles comprise about 80% of the hydrocodone comprised in the composition.
16. The composition of claim 1, wherein for the multiparticulate modified release composition, the first and subsequent populations of hydrocodone-comprising particles have different release profiles.
17. The composition of claim 1, wherein for the multiparticulate modified release composition, the first component is an immediate release component and the at least one subsequent component is a modified release component.
18. The composition of claim 17, which:
(a) upon administration to a patient, rapidly releases the hydrocodone from the first population of hydrocodone comprising particles and releases at least about 80% of the hydrocodone from the at least one subsequent population of hydrocodone comprising particles within about 12 hours; or
(b) upon administration to a patient, rapidly releases the hydrocodone from the first population of hydrocodone comprising particles and releases at least about 80% of the hydrocodone from the at least one subsequent population of hydrocodone comprising particles within about 24 hours.
19. The composition of claim 1, wherein for the multiparticulate modified release composition, the release profile of the hydrocodone upon administration to a patient mimics the release profile of the same hydrocodone administered in the form of two or more doses of immediate release forms of the hydrocodone.
20. The composition of claim 1, wherein for the multiparticulate modified release composition, the release profile of the hydrocodone upon administration to a patient mimics the release profile of the same hydrocodone administered in the form of two or more doses of the hydrocodone in which one dose has an immediate release profile and at least one dose has a modified release profile.
21. A solid oral dosage form comprising the composition of claim 1.
22. The dosage form of claim 21, wherein the multiparticulate modified release composition comprises a blend of first and subsequent hydrocodone-comprising particles filled into hard gelatin or soft gelatin capsules.
23. The dosage form of claim 21, wherein the multiparticulate modified release composition comprises first and subsequent components which are separately and independently compressed into mini-tablets and filled into hard or soft gelatin capsules.
24. The dosage form of claim 21, wherein for the multiparticulate modified release composition, the first component is compressed into the first layer of a multilayer tablet and the at least one subsequent component is compressed into a subsequent layer of the multilayer tablet.
25. The dosage form of claim 21, wherein for the multiparticulate modified release composition, the first and subsequent components are incorporated in a rapidly dissolving dosage form.
26. The dosage form of claim 25, wherein the rapidly dissolving dosage form is a fast-melt tablet dosage form.
27. The dosage form of claim 21, wherein the hydrocodone is present in about 0.1 mg to about 1 g, or about 10 mg to about 80 mg.
28. The dosage form of claim 21 comprising:
(a) about 10 mg hydrocodone and having a mean hydrocodone Cmax of about 8.9 ngmL\xb120%;
(b) about 10 mg hydrocodone and having a hydrocodone Cmax of about 5 to about 15 ngmL;
(c) about 20 mg hydrocodone and having a mean hydrocodone Cmax of about 17.9 ngmL;
(d) about 20 mg hydrocodone and having a hydrocodone Cmax of from about 10 to about 27 ngmL;
(e) about 30 mg hydrocodone and having a mean hydrocodone Cmax of about 31.7 ngmL\xb120%;
(f) about 30 mg hydrocodone and having a hydrocodone Cmax of from about 16 to about 46 ngmL;
(g) about 40 mg hydrocodone and having a mean hydrocodone Cmax of about 37.5 ngmL\xb120%;
(h) about 40 mg hydrocodone and having a hydrocodone Cmax of from about 28 to about 62 ngmL;
(i) about 10 mg to about 40 mg hydrocodone and having a mean hydrocodone Tmax of about 6 hours\xb120%;
(j) about 10 mg to about 40 mg hydrocodone and having a hydrocodone Tmax of from about 4 to about 12 hours;
(k) about 10 mg hydrocodone and having a mean hydrocodone AUClast of about 109 ng*hrmL\xb120%;
(l) about 10 mg hydrocodone and having a hydrocodone AUClast of from about 73 to about 179 ng*hrmL;
(m) about 20 mg hydrocodone and having a mean hydrocodone AUClast of about 212.9 ng*hrmL\xb120%;
(n) about 20 mg hydrocodone and having a hydrocodone AUClast of from about 130 to about 377 ng*hrmL;
(o) about 30 mg hydrocodone and having a mean hydrocodone AUClast of about 392.5 ng*hrmL\xb120%;
(p) about 30 mg hydrocodone and having a hydrocodone AUClast of from about 177 to about 671 ng*hrmL;
(q) about 40 mg hydrocodone and having a mean AUClast of about 464.6 ng*hrmL, +20%;
(r) about 40 mg hydrocodone and having a hydrocodone AUClast of from about 321 to about 712 ng*hrmL.
29. The composition of claim 1, wherein the nanoparticulate naproxen particle is selected from the group consisting of a crystalline phase, an amorphous phase, a semi-crystalline phase, a semi amorphous phase, and mixtures thereof.
30. The composition of claim 1, wherein the effective average particle size of the naproxen particles is selected from the group consisting of less than about 1900 nm, less than about 1800 nm, less than about 1700 nm, less than about 1600 nm, less than about 1500 nm, less than about 1400 nm, less than about 1300 nm, less than about 1200 nm, less than about 1100 nm, less than about 1000 nm, less than about 900 nm, less than about 800 nm, less than about 700 nm, less than about 600 nm, less than about 500 nm, less than about 400 nm, less than about 300 nm, less than about 250 nm, less than about 200 nm, less than about 100 nm, less than about 75 nm, and less than about 50 nm.
31. The composition of claim 1, wherein the composition is formulated:
(a) for administration selected from the group consisting of parental injection, oral administration in solid, liquid, or aerosol form, vaginal, nasal, rectal, otically, ocular, local, buccal, intracistemal, intraperitoneal, and topical administration;
(b) into a dosage form selected from the group consisting of liquid dispersions, gels, sachets, solutions, aerosols, ointments, tablets, capsules, creams, and mixtures thereof;
(c) into a dosage form selected from the group consisting of controlled release formulations, fast melt formulations, lyophilized formulations, delayed release formulations, extended release formulations, pulsatile release formulations, and mixed immediate release and controlled release formulations; or
(d) any combination thereof.
32. The composition of claim 1, wherein:
(a) naproxen is present in an amount consisting of from about 99.5% to about 0.001%, from about 95% to about 0.1%, or from about 90% to about 0.5%, by weight, based on the total combined dry weight of naproxen and at least one surface stabilizer, not including other excipients;
(b) the at least one surface stabilizer is present in an amount of from about 0.5% to about 99.999% by weight, from about 5.0% to about 99.9% by weight, or from about 10% to about 99.5% by weight, based on the total combined dry weight of naproxen and at least one surface stabilizer, not including other excipients; or
(c) a combination thereof.
33. The composition of claim 1, wherein the surface stabilizer is selected from the group consisting of a nonionic surface stabilizer, an anionic surface stabilizer, a cationic surface stabilizer, a zwitterionic surface stabilizer, and an ionic surface stabilizer.
34. The composition of claim 1, wherein the surface stabilizer is selected from the group consisting of cetyl pyridinium chloride, gelatin, casein, phosphatides, dextran, glycerol, gum acacia, cholesterol, tragacanth, stearic acid, benzalkonium chloride, calcium stearate, glycerol monostearate, cetostearyl alcohol, cetomacrogol emulsifying wax, sorbitan esters, polyoxyethylene alkyl ethers, polyoxyethylene castor oil derivatives, polyoxyethylene sorbitan fatty acid esters, polyethylene glycols, dodecyl trimethyl ammonium bromide, polyoxyethylene stearates, colloidal silicon dioxide, phosphates, sodium dodecylsulfate, carboxymethylcellulose calcium, hydroxypropyl celluloses, hypromellose, carboxymethylcellulose sodium, methylcellulose, hydroxyethylcellulose, hypromellose phthalate, noncrystalline cellulose, magnesium aluminum silicate, triethanolamine, polyvinyl alcohol, polyvinylpyrrolidone, 4-(1,1,3,3-tetramethylbutyl)-phenol polymer with ethylene oxide and formaldehyde, poloxamers; poloxamines, a charged phospholipid, dioctylsulfosuccinate, dialkylesters of sodium sulfosuccinic acid, sodium lauryl sulfate, alkyl aryl polyether sulfonates, mixtures of sucrose stearate and sucrose distearate, p-isononylphenoxypoly-(glycidol), decanoyl-N-methylglucamide; n-decyl \u03b2-D-glucopyranoside; n-decyl \u03b2-D-maltopyranoside; n-dodecyl \u03b2-D-glucopyranoside; n-dodecyl \u03b2-D-maltoside; heptanoyl-N-methylglucamide; n-heptyl-\u03b2-D-glucopyranoside; n-heptyl \u03b2-D-thioglucoside; n-hexyl \u03b2-D-glucopyranoside; nonanoyl-N-methylglucamide; n-noyl \u03b2-D-glucopyranoside; octanoyl-N-methylglucamide; n-octyl-\u03b2-D-glucopyranoside; octyl \u03b2-D-thioglucopyranoside; lysozyme, PEG-phospholipid, PEG-cholesterol, PEG-cholesterol derivative, PEG-vitamin A, PEG-vitamin E, lysozyme, random copolymers of vinyl acetate and vinyl pyrrolidone, a cationic polymer, a cationic biopolymer, a cationic polysaccharide, a cationic cellulosic, a cationic alginate, a cationic nonpolymeric compound, cationic phospholipids, cationic lipids, polymethylmethacrylate trimethylammonium bromide, sulfonium compounds, polyvinylpyrrolidone-2-dimethylaminoethyl methacrylate dimethyl sulfate, hexadecyltrimethyl ammonium bromide, phosphonium compounds, quarternary ammonium compounds, benzyl-di(2-chloroethyl)ethylammonium bromide, coconut trimethyl ammonium chloride, coconut trimethyl ammonium bromide, coconut methyl dihydroxyethyl ammonium chloride, coconut methyl dihydroxyethyl ammonium bromide, decyl triethyl ammonium chloride, decyl dimethyl hydroxyethyl ammonium chloride, decyl dimethyl hydroxyethyl ammonium chloride bromide, C12-15-dimethyl hydroxyethyl ammonium chloride, C12-15-dimethyl hydroxyethyl ammonium chloride bromide, coconut dimethyl hydroxyethyl ammonium chloride, coconut dimethyl hydroxyethyl ammonium bromide, myristyl trimethyl ammonium methyl sulphate, lauryl dimethyl benzyl ammonium chloride, lauryl dimethyl benzyl ammonium bromide, lauryl dimethyl (ethenoxy)4 ammonium chloride, lauryl dimethyl (ethenoxy)4 ammonium bromide, N-alkyl (C12-18)dimethylbenzyl ammonium chloride, N-alkyl (C14-18)dimethyl-benzyl ammonium chloride, N-tetradecylidmethylbenzyl ammonium chloride monohydrate, dimethyl didecyl ammonium chloride, N-alkyl and (C12-14)dimethyl 1-napthylmethyl ammonium chloride, trimethylammonium halide, alkyl-trimethylammonium salts, dialkyl-dimethylammonium salts, lauryl trimethyl ammonium chloride, ethoxylated alkyamidoalkyldialkylammonium salt, an ethoxylated trialkyl ammonium salt, dialkylbenzene dialkylammonium chloride, N-didecyldimethyl ammonium chloride, N-tetradecyldimethylbenzyl ammonium, chloride monohydrate, N-alkyl(C12-14) dimethyl 1-naphthylmethyl ammonium chloride, dodecyldimethylbenzyl ammonium chloride, dialkyl benzenealkyl ammonium chloride, lauryl trimethyl ammonium chloride, alkylbenzyl methyl ammonium chloride, alkyl benzyl dimethyl ammonium bromide, C17 trimethyl ammonium bromides, C15 trimethyl ammonium bromides, C17 trimethyl ammonium bromides, dodecylbenzyl triethyl ammonium chloride, poly-diallyldimethylammonium chloride (DADMAC), dimethyl ammonium chlorides, alkyldimethylammonium halogenides, tricetyl methyl ammonium chloride, decyltrimethylammonium bromide, dodecyltriethylammonium bromide, tetradecyltrimethylammonium bromide, methyl trioctylammonium chloride, POLYQUAT 10\u2122, tetrabutylammonium bromide, benzyl trimethylammonium bromide, choline esters, benzalkonium chloride, stearalkonium chloride compounds, cetyl pyridinium bromide, cetyl pyridinium chloride, halide salts of quaternized polyoxyethylalkylamines, MIRAPOL\u2122, ALKAQUAT\u2122, alkyl pyridinium salts; amines, amine salts, amine oxides, imide azolinium salts, protonated quaternary acrylamides, methylated quaternary polymers, and cationic guar.
35. The composition of claim 1, wherein the composition does not produce significantly different naproxen absorption levels when administered under fed as compared to fasting conditions.
36. The composition of claim 1, wherein administration of the composition to a subject in a fasted state is bioequivalent to administration of said composition to a subject in a fed state.
37. The composition of claim 36, wherein \u201cbioequivalency\u201d is established by:
(a) a 90% Confidence Interval of between 0.80 and 1.25 for both Cmax and AUC; or
(b) a 90% Confidence Interval of between 0.80 and 1.25 for AUC and a 90% Confidence Interval of between 0.70 to 1.43 for Cmax.
38. The composition of claim 1, wherein:
(a) the Tmax of naproxen or a salt or derivative thereof, when assayed in the plasma of a mammalian subject following administration, is less than the Tmax for a non-nanoparticulate composition of the same naproxen, administered at the same dosage;
(b) the Cmax of naproxen or a salt or derivative thereof, when assayed in the plasma of a mammalian subject following administration, is greater than the Cmax for a non-nanoparticulate composition of the same naproxen, administered at the same dosage;
(c) the AUC of naproxen or a salt or derivative thereof, when assayed in the plasma of a mammalian subject following administration, is greater than the AUC for a non-nanoparticulate composition of the same naproxen, administered at the same dosage; or
(d) any combination thereof.
39. A method for the treatment of pain comprising administering a therapeutically effective amount of a composition according to claim 1.