1. An automatic teller machine, comprising a shell and a computer inside an shell, is characterized in that: it also includes an anti-counterfeit banknote recorder which is set inside of the shell, communicating and connected with the computer, the anti-counterfeit banknote recorder characterized in that: it consists of a microprocessor, a memory, a communication module and a first photographic device; the first photographic device is composed of a camera and a flasher which has different types of rays; the microprocessor is able to regulate the flashlight automatically so as to provide different types of rays according to the optical characteristics on the surface of the banknote under monitoring, and control the camera so as to take photos of the banknote under monitoring, thus, photo information of the banknote is obtained; the microprocessor is able to receive commands from the external equipments via the communication module, thus, the first photographic device is controlled accordingly so as to take photos; moreover, via the communication module, the microprocessor is able to receive transaction information in relation to the banknotes under monitoring from the external equipments; the microprocessor is able to save the photo information of the banknotes and the transaction information to the memory in the form of encryption recording; and
wherein the automatic teller machine is characterized in that: the computer is able to provide counterfeit banknote complaint interface for the trader, so that the trader is able to complete the complaint process for the counterfeit banknotes as guided by the interface; the computer is able to generate the command of locking a particular record according to the complaint process for the counterfeit banknotes, and the command is sent to the anti-counterfeit banknote recorder for execution.
2. A system is characterized in that: it consists of the automatic teller machine according to claim 1 and a server for communication and connecting with the automatic teller machine; the computer in the automatic teller machine is able to provide counterfeit banknote complaint interface for the trader, so that the trader is able to complete the complaint process for the counterfeit banknotes as guided by the interface; the computer is able to generate the command of locking a particular record according to the complaint process for the counterfeit banknotes, and the command is sent to the anti-counterfeit banknote recorder for execution, besides, the computer is able to generate alarm information to be sent to the server according to the complaint process of the counterfeit banknotes; the computer in the automatic teller machine is able to receive the command of obtaining the record kept by the anti-counterfeit banknote recorder from the server, and the command is sent to the anti-counterfeit banknote recorder for execution.
3. The system according to claim 2 is characterized in that: the computer in the automatic teller machine is able to receive the command of authorizing to release the lock to the particular record, and the command is sent to the anti-counterfeit banknote recorder for execution.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A magnetic memory comprising:
at least one wire;
a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire; and
first yokes which are provided so as to be spaced from at least one pair of opposed side faces of the magnetoresistive effect element, each of the first yokes having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
2. The magnetic memory according to claim 1, wherein the first yokes are composed of four yokes which surround four side faces of the magnetoresistive effect element.
3. The magnetic memory according to claim 1, wherein the non-magnetic layer of each of the first yokes has a film thickness thinner than a shortest distance between an end portion of the first yoke and an end portion of the magnetoresistive effect element.
4. The magnetic memory according to claim 1, wherein the soft magnetic layer is one of a Ni\u2014Fe alloy layer, a Co\u2014Fe\u2014Ni alloy layer, amorphous magnetic layer, and a micro-crystal ferromagnetic layer, and the amorphous magnetic layer or the mica-crystal ferromagnetic layer is formed of any one selected from the group of Co\u2014Fe-AA, Co\u2014Fe-AA-AA2, Fe-AA-AA2, Co-AA AA2, Co\u2014Mn-AA-AA2, Fe\u2014Cu-AA-AA2, and Co\u2014Fe\u2014Ni-AA, where AA or AA2 comprises at least one selected from the group of B, Si, Ge, Zr, Nb, P, Mo, Ta, N, C, Ti, Al, W, V or rare earth elements.
5. The magnetic memory according to claim 1, wherein the non-magnetic layer comprises at least one element selected from the group of Al, Ga, In, Si, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W Cu, Zn, Ag, Au, Ru, Re, Os, or alloy thereof, oxide or nitride thereof.
6. The magnetic memory according to claim 1, wherein an interaction between the soft magnetic layers of the first yoke is in a range between \u22122000 Oe and 500 Oe.
7. The magnetic memory according to claim 1, wherein the magnetoresistive effect element comprises a tunneling magnetoresistive effect element.
8. The magnetic memory according to claim 1, further comprising a selecting transistor for reading out recorded information stored in the storage layer of the magnetoresistive effect element.
9. The magnetic memory according to claim 1, further comprising a second yoke which is formed sv as to cover the wire and which has at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
10. A magnetic memory comprising:
at least one wire; and
a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire; and
a yoke which is provided at least on both side faces of the wire, the yoke having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
11. The magnetic memory according to claim 10, further comprising a barrier metal layer provided between the yoke and the wire.
12. The magnetic memory according to claim 10, wherein the non-magnetic layer of the yoke has a film thickness thinner than a shortest distance between an end portion of the yoke and an end portion of the magnetoresistive effect element.
13. The magnetic memory according to claim 11, wherein the barrier metal layer is formed of at least one element selected from the group of Ta, Ti, Si, Ge, Al, W, Mo and V or alloy thereof, or oxide or nitride thereto.
14. The magnetic memory according to claim 10, wherein the soft magnetic layer is one of a Ni\u2014Fe alloy layer, a Co\u2014Fe\u2014Ni alloy layer, amorphous magnetic layer, and a micro-crystal ferromagnetic layer, and the amorphous magnetic layer or the mico-crystal ferromagnetic layer is formed of any one selected from the group to Co\u2014Fe-AA, Co\u2014Fe-AA-AA2, Fe-AA-AA2, Co-AA AA2, Co\u2014Mn-AA-AA2, Fe\u2014Cu-AA-AA2, and Co\u2014Fe\u2014Ni-AA, where AA or AA2 comprises at least one selected from the group of B, Si, Ge, Zr, Nb, P, Mo, Ta, N, C, Ti, Al, W V or rare earth elements.
15. The magnetic memory according to claim 10, wherein the non-magnetic layer comprises at least one element selected from the group of Al, Ga, In, Si, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Zn, Ag, Au, Ru, Re, Os, or alloy thereof, oxide or nitride thereof.
16. The magnetic memory according to claim 10, wherein an interaction between the soft magnetic layers of the yoke is in a range between \u221220000 e and 5000 e.
17. The magnetic memory according to claim 10, wherein the magnetoresistive effect element comprises a tunneling magnetoresistive effect element.
18. The magnetic memory according to claim 10, further comprising a selecting transistor for reading out recorded information stored in the storage layer of the magnetoresistive effect element.
19. The magnetic memory according to claim 10, wherein an end portion of the yoke extends toward the magnetoresistive effect element.
20. A magnetic memory comprising:
at least one wire;
a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire; and
a yoke which is provided on both side faces of the wire and on an opposite face of the wire to the magnetoresistive effect element, the yoke having at least two soft magnetic layers and a non-magnetic layer interposed therebetween.
21. The magnetic memory according to claim 20, further comprising a barrier metal layer provided between the yoke and the wire.
22. The magnetic memory according to claim 20, wherein the non-magnetic layer of the yoke has a film thickness thinner than a shortest distance between an end portion of the yoke and an end portion of the magnetoresistive effect element.
23. The magnetic memory according to claim 21, wherein the barrier metal layer is formed of at least one element selected from the group of Ta, Ti, Si, Ge, Al, W, Mo and V or alloy thereof, or oxide or nitride thereof.
24. The magnetic memory according to claim 20, wherein the soft magnetic layer is one of a Ni\u2014Fe alloy layer, a Co\u2014Fe\u2014Ni alloy layer, amorphous magnetic layer, and a micro-crystal ferromagnetic layer, and the amorphous magnetic layer or the mico-crystal ferromagnetic layer is formed of any one selected from the group of Co\u2014Fe-AA, Co\u2014Fe-AA AA2, Fe-AA-AA2, Co-AA-AA2, Co\u2014Mn-AA-AA2 and Fe\u2014Cu-AA-AA2, and Co\u2014Fe\u2014Ni-AA, where AA or AA2 comprises at least one selected from the group of B, Si, Ge, Zr, Nb, P, Mo, Ta, N, C, Ti, Al, W V or rare earth elements.
25. The magnetic memory according to claim 20, wherein the non-magnetic layer comprises at least one element selected from the group of Al, Ga, In, Si, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Zn, Ag, Au, Ru, Re, Os, or alloy thereof, oxide or nitride thereof.
26. The magnetic memory according to claim 20, wherein an interaction between the soft magnetic layers of the yoke is in a range between \u22122000 Oe and 500 Oe.
27. The magnetic memory according to claim 20, wherein the magnetoresistive effect element comprises a tunneling magnetoresistive effect element.
28. The magnetic memory according to claim 20, further comprising a selecting transistor for reading out recorded information stored in the storage layer of the magnetoresistive effect element.
29. The magnetic memory according to claim 20, wherein an end portion of the yoke extends toward the magnetoresistive effect element.
30. A magnetic memory comprising:
at least one wire;
a magnetoresistive effect element having a storage layer whose magnetization direction varies according to a current magnetic field generated by causing a current to flow in the wire;
a first yoke provided on both side faces of the wire and having two first soft magnetic layers and a non-magnetic layer interposed therebetween; and
a second yoke provided on an opposite face of the wire to the magnetoresistive effect element and having a second soft magnetic layer.
31. The magnetic memory according to claim 30, further comprising a first barrier metal layer provided between the first yoke and the wire; and a second barrier metal layer provided between the second yoke and the wire.
32. The magnetic memory according to claim 30, wherein the non-magnetic layer of the first yoke has a film thickness thinner than a shortest distance between an end portion of the first yoke and an end portion of the magnetoresistive effect element.
33. The magnetic memory according to claim 31, wherein the first and second barrier metal layers are formed of at least one element selected from the group of Ta, Ti, Si, Ge, Al, W, Mo and V or alloy thereof, or oxide or nitride thereof.
34. The magnetic memory according to claim 30, wherein each of the first and second soft magnetic layers is one of a Ni\u2014Fe alloy layer, a Co\u2014Fe\u2014Ni alloy layer, amorphous magnetic layer, and a micro-crystal ferromagnetic layer, and the amorphous magnetic layer or the mico-crystal ferromagnetic layer is formed of any one selected from the group of Co\u2014Fe-AA, Co\u2014Fe-AA-AA2, Fe-AA AA2, Co-AA-AA2, Co\u2014Mn-AA-AA2 and Fe\u2014Cu-AA-AA2, and Co\u2014Fe\u2014Ni-AA, where AA or AA2 comprises at least one selected from the group of B, Si, Ge, Zr, Nb, P, Mo, Ta, N, C, Ti, Ai, W, V or rare earth elements.
35. The magnetic memory according to claim 30, wherein the non-magnetic layer comprises at least one element selected from the group of Ai, Ga, In, Si, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Cu, Zn, Ag, Au, Ru, Re, Os, or alloy thereof, oxide or nitride thereof.
36. The magnetic memory according to claim 30, wherein an interaction between the first soft magnetic layers of the first yoke is in a range between \u22122000 Oe and 500 Oe.
37. The magnetic memory according to claim 30, wherein the magnetoresistive effect element comprises a tunneling magnetoresistive effect element.
38. The magnetic memory according to claim 30, further comprising a selecting transistor for reading out recorded information stored in the storage layer of the magnetoresistive effect element.
39. The magnetic memory according to claim 30, wherein an end portion of the first yoke extends toward the magnetoresistive effect element.
40. The magnetic memory according to claim 30, wherein the second yoke has a single soft magnetic layer as the second soft magnetic layer.