1. A windup spring drive unit comprising: a spring as a power source; a windup shaft for manually winding up the spring; an output shaft; and a gear train for transmitting power of the spring to the output shaft, these members being accommodated in a casing, wherein a crown gear is included in the gear train, the crown gear has its center of rotation axis being arranged in parallel with the windup shaft, the output shaft and the windup shaft are arranged to be orthogonal to each other, and the windup shaft is provided to pierce in a thin direction of the casing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device comprising:
a glass substrate having a distortion point of not lower than 750 C.;
an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate; and
a TFT including a channel formation region of a semiconductor thin film made of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
wherein plane orientation of said channel formation region is roughly 110 orientation, and not less than 90% of crystal lattices have continuity at crystal grain boundaries.
2. A device according to claim 1, wherein said glass substrate is crystallized glass.
3. A device according to claim 1, wherein the distortion point of said glass substrate is 950 to 1100 C.
4. A device according to claim 1, wherein said semiconductor thin film is a silicon film including crystal grain boundaries.
5. A semiconductor device comprising:
a glass substrate having a distortion point of not lower than 750 C.;
an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate; and
a TFT including a channel formation region of a semiconductor thin film make of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
wherein plane orientation of the channel formation region is roughly 110 orientation, and not less that 90% of lattice stripes observed to cross crystal grain boundaries are linearly continuous between different crystal grains forming said crystal grain boundaries.
6. A device according to claim 5, wherein said glass substrate is crystallized glass.
7. A device according to claim 5, wherein the distortion point of said glass substrate is 950 to 1100 C.
8. A device according to claim 5, wherein said semiconductor thin film is a silicon film including crystal grain boundaries.
9. A semiconductor device comprising:
a glass substrate having a distortion point of not lower than 750 C.;
an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate; and
a TFT including a channel formation region of a semiconductor thin film made of a collective of a plurality of rod-like or flattened rod-like crystals and disposed on said insulating silicon film,
wherein an electron beam diffraction pattern observed when said channel formation region is vertically irradiated with an electron beam has regularity peculiar to 110 orientation.
10. A device according to claim 9, wherein said glass substrate is crystallized glass.
11. A device according to claim 9, wherein the distortion point of said glass substrate is 950 to 1100 C.
12. A device according to claim 9, wherein said semiconductor thin film is a silicon film including crystal grain boundaries.
13. A semiconductor device comprising:
a glass substrate having a distortion point of not lower than 750 C.;
an insulating silicon film disposed on at least a front surface and a back surface of said glass substrate; and
a TFT including a channel formation region of a crystalline semiconductor thin film disposed on said insulating silicon film.
14. A device according to claim 13, wherein said glass substrate is crystallized glass.
15. A device according to claim 13, wherein the distortion point of said glass substrate is 950 to 1100 C.
16. A device according to claim 13, wherein said semiconductor thin film is a silicon film including crystal grain boundaries.
17. A semiconductor device comprising:
a glass substrate having a distortion point of not lower than 750 C.;
an insulating silicon film formed on at least a front surface and a back surface of said glass substrate; and
a TFT including a channel formation region of a high temperature polysilicon film disposed on said insulating silicon film.
18. A device according to claim 17, wherein said glass substrate is crystallized glass.
19. A device according to claim 17, wherein the distortion point of said glass substrate is 950 to 1100 C.
20. A method of manufacturing a semiconductor device, comprising the steps of:
forming an insulating silicon film by a low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower than 750 C.;
forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
adding or holding a catalytic element for facilitating crystallization of said amorphous semiconductor thin film in a part or all of said amorphous semiconductor thin film;
carrying out a heat treatment to crystallize the part or all of said amorphous semiconductor thin film and to transform it into a crystalline semiconductor thin film;
gettering said catalytic element from the crystalline semiconductor thin film; and
patterning the crystalline semiconductor thin film after said gettering step to form an active layer and to form a thermal oxidation film on a surface of said active layer.
21. A method according to claim 20, wherein said glass substrate is crystallized glass.
22. A method according to claim 20, wherein the distortion point of said glass substrate is 950 to 1100 C.
23. A method according to claim 20, wherein said amorphous semiconductor thin film is an amorphous silicon film, and said crystalline semiconductor thin film is a silicon film including crystal grain boundaries.
24. A method according to claim 20, wherein the step of gettering said catalytic element is a heat treatment carried out in an atmosphere containing a halogen element at a temperature exceeding 700 C.
25. A method according to claim 20, wherein the step of gettering said catalytic element further comprises the steps of:
selectively adding an impurity element selected from group 15 into a part of said crystalline semiconductor thin film; and
moving said catalytic element remaining in a region where said impurity element was not added into a region where said impurity element was added, by a heat treatment.
26. A method according to claim 20, wherein said catalytic element is one or plural kinds of elements selected from the group consisting of Ni, Ge, Co, Fe, Pd, Pt, Cu, Au, and Pb.
27. A method of manufacturing a semiconductor device, comprising the steps of:
forming an insulating silicon film by a low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower than 750 C.;
forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
carrying out a heat treatment to crystallize said amorphous semiconductor thin film and to transform the film into a crystalline semiconductor thin film; and
patterning said crystalline semiconductor thin film to form an active layer and to form a thermal oxidation film on a surface of said active layer.
28. A method according to claim 27 wherein said glass substrate is crystallized glass.
29. A method according to claim 27, wherein said amorphous semiconductor thin film is an amorphous silicon film, and said crystalline semiconductor thin film is a silicon film including crystal grain boundaries.
30. A method of manufacturing an electroluminescent display comprising the steps of:
forming an insulating silicon film by low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower that 750 C.;
forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
adding or holding a catalytic element for facilitating crystallization of said amorphous semiconductor thin film in a part or all of said amorphous semiconductor thin film;
carrying out a heat treatment to crystallize the part or all of said amorphous semiconductor thin film and to transform it into a crystalline semiconductor thin film;
gettering said catalytic element from the crystalline semiconductor thin film; and
patterning the crystalline semiconductor thin film after said gettering step to form an active layer and to form a thermal oxidation film on a surface of said active layer.
31. A method according to claim 30, wherein said glass substrate is crystallized glass.
32. A method according to claim 30, wherein the distortion point of said glass substrate is 950 to 1100 C.
33. A method according to claim 30, wherein said amorphous semiconductor thin film is an amorphous silicon film, and said crystalline semiconductor thin film is a silicon film including crystal grain boundaries.
34. A method according to claim 30, wherein the step of gettering said catalytic element is a heat treatment carried out in an atmosphere containing a halogen element at a temperature exceeding 700 C.
35. A method according to claim 30, wherein the step of gettering said catalytic element further comprises the steps of:
selectively adding an impurity element selected from group 15 into a part of said crystalline semiconductor thin film; and
moving said catalytic element remaining in a region where said impurity element was not added into a region where said impurity element was added, by a heat treatment.
36. A method according to claim 30, wherein said catalytic element is one or plural kinds of elements selected from the group consisting of Ni, Ge, Co, Fe, Pd, Pt, Cu, Au, and Pb.
37. A method of manufacturing an electroluminescent display comprising the steps of:
forming an insulating silicon film by low pressure CVD method on all surfaces of a glass substrate having a distortion point of not lower that 750 C.;
forming an amorphous semiconductor thin film on the insulating silicon film formed at a front side of said glass substrate;
carrying out a heat treatment to crystallize said amorphous semiconductor thin film and to transform the film into a crystalline semiconductor thin film; and
patterning said crystalline semiconductor thin film to form an active layer and to form a thermal oxidation film on a surface of said active layer.
38. A method according to claim 37, wherein said glass substrate is crystallized glass.
39. A method according to claim 37, wherein said amorphous semiconductor thin film is an amorphous silicon film, and said crystalline semiconductor thin film is a silicon film including crystal grain boundaries.