1. A method for manufacturing a CMOS image sensor, comprising:
forming an isolating region in a semiconductor substrate to define an active region for a unit pixel of the CMOS image sensor;
forming a gate electrode on said semiconductor substrate;
forming a masking layer which covers a boundary region of said isolation region; and
performing an ion implantation of impurities using the masking layer for forming a diffusion region of a photo diode in a portion of the active region, wherein said diffusion region is formed spaced apart from said isolation region.
2. The method for manufacturing a CMOS image sensor as claimed in claim 1, further comprising a step of forming a passivation layer after the step of forming said gate electrode.
3. The method for manufacturing a CMOS image sensor as claimed in claim 2, wherein said passivation layer is composed of an insulating layer.
4. The method for manufacturing a CMOS image sensor as claimed in claim 2, wherein said passivation layer is composed of any one of a single layer of an oxide layer and a single layer of a nitride layer.
5. The method for manufacturing a CMOS image sensor as claimed in claim 2, wherein said passivation layer is composed of multi layers of at least one oxide layer and at least one nitride layer.
6. A method for manufacturing a CMOS image sensor, comprising:
forming an isolating region in a semiconductor substrate to define an active region for a unit pixel of the CMOS image sensor;
forming a passivation layer over a boundary between the isolation region and the active region;
forming a mask layer on the isolation layer and a portion of the passivation layer; and
performing an ion implantation of impurities for forming a diffusion region of the photo diode in a portion of the active region, wherein said diffusion region is formed spaced apart from said isolation region.
7. The method for manufacturing a CMOS image sensor as claimed in claim 6, wherein said passivation layer is composed of an insulating layer.
8. The method for manufacturing a CMOS image sensor as claimed in claim 6, wherein said passivation layer is composed of any one of a single layer of an oxide layer and a single layer of a nitride layer.
9. The method for manufacturing a CMOS image sensor as claimed in claim 6, wherein said passivation layer is composed of multi layers of at least one oxide layer and at least one nitride layer.
10. The method for manufacturing a CMOS image sensor as claimed in claim 6, wherein said mask layer is a photoresist layer.
11. The method for manufacturing a CMOS image sensor as claimed in claim 6, wherein said semiconductor substrate is a P++ type silicon substrate having a P\u2212 type epitaxial layer formed thereon, and the diffusion region for said photo diode has an n\u2212 type diffusion region.
12. The method for manufacturing a CMOS image sensor as claimed in claim 11, wherein a Po type diffusion region is formed in said n\u2212 type diffusion region of the photo diode so as to reduce dark current generated on the surface of said semiconductor substrate.
13. A CMOS image sensor, comprising:
a semiconductor substrate having an isolating region and an active region;
a gate electrode formed over the semiconductor substrate;
a masking layer formed over said semiconductor substrate, wherein said masking layer covers a boundary of said isolation region; and
an impurity diffusion region of a photo diode formed in said semiconductor substrate, wherein said impurity diffusion region is formed spaced apart from said isolation region.
14. A CMOS image sensor, comprising:
a semiconductor substrate having an isolating region and an active region;
an impurity diffusion region of a photo diode in said semiconductor substrate, wherein said impurity diffusion region is formed spaced apart from said isolation region.
15. The CMOS image sensor as claimed in claim 14, wherein the CMOS image sensor further comprises a passivation layer formed over a boundary between the isolation region and the active region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An activated carbon air filter comprising a corrugated paper structure carrying activated carbon, characterised in that the paper comprises a substantially non-porous, organic fibre paper and in that the activated carbon is provided as a coating on the paper surface.
2. An air filter according to claim 1, characterised in that the corrugated paper structure comprises a honeycomb structure having air channels approximately 1 mm in diameter.
3. An air filter according to claim 2, characterised in that the corrugated paper is of an E-flute construction having a cell height between substantially 1.2 to 1.4 mm and a pitch of substantially 3 mm.
4. An air filter according to any one of claims 1 to 3, characterised in that the filter comprises at least around 130 grams of active carbon per litre of filter volume.
5. An air filter according to any one of claims 1 to 4, characterised in that the substantially non-porous paper comprises Kraft paper.
6. An air filter according to claim 5, characterised in that the paper has a density of approximately 49 gmm2.
7. An air cleaning device comprising an activated carbon air filter as claimed in any one of the preceding claims, and air moving means for producing a flow of air through the air filter.
8. A method of making an activated carbon air filter comprising a corrugated paper structure carrying activated carbon which method comprises forming the corrugated paper structure from substantially non-porous, organic fibre paper and thereafter applying the activated carbon in the form of a coating on the surface of the corrugated paper.
9. A method according to claim 8, characterised in that the paper is coated using an aqueous slurry comprising carbon mixed with a binder.
10. A method according to claim 9, characterised in that the binder comprises a cellulose ether.
11. A method according to claim 9, characterised in that the coating is applied by drawing the slurry up the channels defined by the corrugations.
12. A method according to claim 11, characterised in that the paper is wetted prior to drawing the slurry up the channels.