1. A component mounting apparatus which performs an operation for mounting a component on a board which is held by a board holding portion, comprising
an operation performing mechanism which performs a predetermined operation for mounting the component on the board;
an imaging portion which acquires an image of a mark provided on the component or the board or an image of a body of the component;
an illuminating portion which irradiates an illumination light to the component or the board when the imaging portion images; and
a recognition portion which performs a recognition process to recognize the image of the mark or the image of the body of the component;
wherein the illuminating portion has a light emitting panel in which a plurality of light emitting portions whose light emission states can be individually changed are orderly arranged, and an light emission control portion which individually controls the light emitting portions to make the color tone of the illumination light irradiated by the respective light emitting portions and the color tone distribution of the illumination light in the light emitting panel to be changed on the basis of the imaging object.
2. An illuminating apparatus used in imaging, which performs an operation for mounting a component on a board held by a board holding portion and comprises an operation performing mechanism which performs a predetermined operation for mounting the component on the board, an imaging portion which acquires an image of a mark that is provided on the component or the board or an image of a body of the component, and a recognition portion which performs a recognition process to recognize the image of the mark or the image of the body of the component, which irradiates an illumination light to the component or the board when the imaging portion images, comprising
a light emitting panel in which a plurality of light emitting portions whose light emission states can be individually changed are orderly arranged, and an light emission control portion which individually controls the light emitting portions to makes the color tone of the illumination light irradiated by the respective light emitting portions and the color tone distribution of the illumination light in the light emitting panel to be changed on the basis of the imaging object.
3. An illuminating method used in a component mounting apparatus which performs an operation for mounting a component on a board which is held by a board holding portion and comprising an operation performing mechanism which performs a predetermined operation for mounting the component on the board, an imaging portion which acquires an image of a mark that is provided on the component or the board or an image of a body of the component, and a recognition portion which performs a recognition process to recognize the image of the mark or the body of the component, which irradiates an illumination light to the component or the board when the imaging portion images, in which
when the illumination light is irradiated from a light emitting panel, in which a plurality of light emitting portions whose light emission states can be individually changed are orderly arranged, the color tone of the illumination light irradiated by the respective light emitting portions and the color tone distribution of the illumination light in the light emitting panel are made to be changed on the basis of the imaging object by individually controlling the light emitting portions.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A manufacturing method of a semiconductor device comprising:
forming a plurality of elements on a substrate;
forming and burying a silicon compound film between the plurality of elements; and
radiating the silicon compound film with microwaves to produce a silicon dioxide film,
wherein the microwaves are radiated to the silicon compound film under an atmosphere having a pressure at which no radical is generated by the microwaves.
2. The manufacturing method of the semiconductor device according to claim 1, wherein the microwaves have a frequency between 2.45 GHz and 25 GHz.
3. The manufacturing method of the semiconductor device according to claim 1, wherein the temperature of the substrate is between 200\xb0 C. and 400\xb0 C. while the microwaves are being radiated.
4. The manufacturing method of the semiconductor device according to claim 1, wherein the power density of the microwaves is between 10 Wcm2 and 1 kWcm2.
5. The manufacturing method of the semiconductor device according to claim 1, wherein the radiating time of the microwaves is between 30 seconds and 30 minutes.
6. The manufacturing method of the semiconductor device according to claim 1, further comprising polishing an upper surface of the silicon dioxide film after the silicon compound film is modified to the silicon dioxide film.
7. The manufacturing method of the semiconductor device according to claim 1, wherein the silicon compound film is formed by applying a silicon compound solution to the substrate.
8. The manufacturing method of the semiconductor device according to claim 1, wherein the silicon compound film is formed by applying a silicon compound solution to the substrate and volatilizing a solvent contained in the silicon compound solution.
9. The manufacturing method of the semiconductor device according to claim 8, wherein the solvent is volatilized by baking the substrate at the temperature between 200\xb0 C. and 300\xb0 C.
10. The manufacturing method of the semiconductor device according to claim 1, wherein the silicon compound film comprises a polysilazane film.
11. The manufacturing method of the semiconductor device according to claim 10, wherein the microwaves are radiated to the substrate under an atmosphere containing oxygen or water vapor.
12. The manufacturing method of the semiconductor device according to claim 1, wherein the silicon compound film comprises a polysilazane film or an organic SOG film.
13. The manufacturing method of the semiconductor device according to claim 12, wherein the microwaves are radiated to the substrate under an atmosphere containing nitrogen or inert gas.
14. The manufacturing method of the semiconductor device according to claim 1, wherein the element is an MTJ element.
15. The manufacturing method of the semiconductor device according to claim 1, wherein the element is a variable resistive element.
16. The manufacturing method of the semiconductor device according to claim 1, wherein before or after the radiating of microwaves, a hot water treatment of 50\xb0 C. to 90\xb0 C., a liquid mixture treatment with the use of sulfuric acid-hydrogen peroxide solution mixture, or a combination treatment thereof is performed.