1. A method for performing a circuit edit operation on a semiconductor device using an electron beam, comprising:
a) directing the electron beam to a target area of the semiconductor device, the electron beam having a landing energy of less than 2000V; and,
b) providing a reactive gas proximate to a surface of the semiconductor device.
2. The method of claim 1, wherein the landing energy of the electron beam is set to have an optimal energy for disassociating the reactive gas.
3. The method of claim 1, wherein the landing energy of the electron beam is set to be less than 1000V.
4. The method of claim 1, wherein the landing energy of the electron beam is set to be less than 100V.
5. The method of claim 1, wherein the electron beam is emitted with a first energy level and the landing energy of the electron beam is reduced to a second energy level less than the first energy level by electrically biasing an element proximate to the semiconductor device to provide a concentric electric field for decelerating the electron beam.
6. The method of claim 5, wherein the second energy level is less than 2000V.
7. The method of claim 5, wherein the second energy level is less than 1000V.
8. The method of claim 5, wherein the second energy level is less than 100V.
9. The method of claim 5, wherein the element includes a gas nozzle for delivering the reactive gas to the semiconductor device.
10. The method of claim 9, wherein the step of directing includes positioning an aperture of the gas nozzle over the target area of the semiconductor device and directing the electron beam through the aperture.
11. The method of claim 10, wherein the step of providing the reactive gas includes delivering the reactive gas through the gas nozzle to provide a uniform gas flux at the surface of the target area.
12. A method for performing a circuit edit operation of a semiconductor device using an electron beam, comprising:
a) positioning the electron beam onto a target edit area of the semiconductor device;
b) setting the landing energy of the electron beam to less than 2000V; and,
c) providing a reactive gas proximate to a surface of the semiconductor device.
13. The method of claim 12, wherein the landing energy of the electron beam is set to have an optimal energy for disassociating the reactive gas.
14. The method of claim 12, wherein the landing energy of the electron beam is set to be less than 1000V.
15. The method of claim 12, wherein the landing energy of the electron beam is set to be less than 100V.
16. The method of claim 12, wherein the step of positioning the electron beam includes setting a landing energy proximate to an operating voltage of the semiconductor device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An imaging apparatus, comprising:
a microlens array having a plurality of microlenses regularly aligned two-dimensionally, wherein light from a subject condensed by an imaging lens is incident on the microlens array; and
a plurality of light receiving parts disposed for each of the plurality of microlenses, the plurality of light receiving parts being associated with each microlens, the plurality of light receiving parts including at least two light receiving parts for receiving the light from the subject that has been imaged onto the microlenses and subjecting the light to photoelectric conversion;
wherein the at least two light receiving parts are adjacent each other having one side in common;
wherein the imaging lens has a pupil disposed as being out of conjugation with a light receiving plane of each of the light receiving parts.
2. The imaging apparatus according to claim 1, wherein there is a dead zone lying between the at least two light receiving parts.
3. The imaging apparatus according to claim 2, wherein the following relation is established:
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where fL represents the focal length of the microlens, p represents the pitch of the microlenses, S represents the width of a dead zone, and Zd represents a deviation between the light receiving plane of the light receiving parts and the conjugated position of the pupil of the imaging lens.
4. The imaging apparatus according to claim 1, wherein the light receiving parts are disposed, for each of the microlenses, by two each in the horizontal direction of an image of the subject.
5. The imaging apparatus according to claim 1, wherein the microlens is a cylindrical lens.
6. The imaging apparatus according to claim 1, wherein the plurality of light receiving parts associated with each of the microlenses include: each two light receiving parts disposed in the horizontal direction of the image of the subject; and each two light receiving parts disposed in the perpendicular direction of the image of the image of the subject.
7. The imaging apparatus according to claim 1, wherein the light receiving parts are disposed by two rows each in the horizontal direction and in the perpendicular direction, respectively, of the image of the subject, as being associated with each of the microlenses.
8. The imaging apparatus according to claim 6, wherein the imaging apparatus generates, based on pixel signals obtained from the plurality of light receiving parts each disposed in the horizontal direction and perpendicular direction, parallax images in the horizontal direction and in the perpendicular direction, respectively, and generates a three-dimensional image, based on the parallax images.
9. The imaging apparatus according to claim 1, wherein the imaging apparatus generates at least one of: a plurality of parallax images having parallax to one another, based on pixel signals obtained from the plurality of light receiving parts; and a two-dimensional image obtained by adding relevant pixel signals obtained from the plurality of light receiving parts.