What is claimed is:
1. A container comprising:
(a) a semi-enclosed container body including a tubular structure having two open ends and a bottom panel enclosing one end of said container body, the other end of said tubular structure opposite from said bottom panel forming a substantially continuous outwardly-extending peripheral flange;
(b) a lid for selectively converting said semi-enclosed container to a closed container; and
(c) a closure means for sealing said lid to said container body, said closure means comprising a mechanical interlocking seal and a slideable mechanical closure for sealing said mechanical interlocking seal.
2. The container of claim 1 wherein said closure means includes at least one interlocking bead and groove pair located on said lid and said flange and a slideable mechanical closure for engaging said interlocking bead and groove pair.
3. The container of claim 1, wherein said interlocking bead and groove pair define at least two orthogonal linear segments in a plane defined by said flange.
4. The container of claim 1, wherein at least one of said lid and said flange include tabs, said tabs projecting no farther outwardly than an outer edge of said flange.
5. The container of claim 1, wherein said tubular structure includes two opposed side walls, two opposed end walls between said side walls, said side walls and said end walls together forming said tubular structure.
6. The container of claim 5, wherein said side walls, said end walls, and said bottom panel are unitarily formed from a continuous sheet of material.
7. The container of claim 5, wherein each of said side walls includes a gusset extending in a direction substantially parallel to said bottom panel, and wherein said side walls are inwardly or outwardly foldable and said end walls are inwardly foldable toward one another, such that said container is collapsible in a direction normal to said lid and said bottom panel while being substantially self-supporting while said side walls and said end walls are in their unfolded orientation.
8. The container of claim 1, wherein said lid is joined to said container via a hinge, and said interlocking bead and groove pair extend outwardly beyond said hinge.
9. The container of claim 1, wherein said tubular structure has a substantially rectangular cross-sectional shape.
10. The container of claim 1, wherein said container is stackable and self-supporting.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A flip chip assembly, comprising:
a semiconductor die having a core area and a periphery area, the periphery area including an electrostatic discharge (ESD) structure, and the semiconductor die including at least one power conductor to supply power between the core area and the periphery;
a substrate coupled to the semiconductor die via a plurality of electrically conductive bumps;
a first connection circuit located within the semiconductor die core area to couple power between the substrate and the semiconductor die power conductor, an electrically conductive bump to connect between the first connection circuit and the substrate; and
the ESD structure coupled to the first connection circuit.
2. The flip chip assembly of claim 1 wherein the first connection circuit is selected from the group consisting of bond pads and under ball metallization (UBM).
3. The flip chip assembly of claim 1 further comprising a second connection circuit located over and electrically coupled to the ESD structure; and
the substrate including a first conductive trace to couple the first connection circuit to the second connection circuit such that the ESD structure is coupled to the first connection circuit through the first conductive trace.
4. The flip chip assembly of claim 1 wherein the semiconductor die further comprises a second conductive trace coupled between the first connection circuit and the ESD structure.
5. The flip chip assembly of claim 4 wherein the semiconductor die further comprises a redistribution layer; and
the redistribution layer includes the second conductive trace.
6. The flip chip assembly of claim 1 further including at least a third connection circuit located in the semiconductor die core area to couple power between the substrate and the semiconductor die power conductor, the third connection circuit coupled to the ESD structure.
7. The flip chip assembly of claim 1 wherein the substrate is selected from the group consisting of circuit boards, carriers, and intermediate substrates.
8. A flip chip assembly, comprising:
a semiconductor die having a core area and a periphery area, the periphery area including an electrostatic discharge (ESD) structure, and the semiconductor die including at least one power conductor to supply power between the core area and the periphery;
a substrate coupled to the semiconductor die via a plurality of electrically conductive bumps;
a first under ball metallization (UBM) located within the semiconductor die core area to couple power between the substrate and the semiconductor die power conductor, an electrically conductive bump to connect between the first UBM and the substrate; and
the ESD structure coupled to the first UBM.
9. The flip chip assembly of claim 8 further comprising a second UBM located over and electrically coupled to the ESD structure; and
the substrate including a first conductive trace to couple the first UBM to the second UBM such that the ESD structure is coupled to the first UBM through the first conductive trace.
10. The flip chip assembly of claim 8 wherein the semiconductor die further comprises a second conductive trace coupled between the first UBM and the ESD structure.
11. The flip chip assembly of claim 10 wherein the semiconductor die further comprises a redistribution layer; and
the redistribution layer includes the second conductive trace.
12. The flip chip assembly of claim 8 further including at least a third UBM located in the semiconductor die core area, the third UBM coupled to the ESD structure.
13. The flip chip assembly of claim 8 wherein the substrate is selected from the group consisting of circuit boards, carriers, and intermediate substrates.
14. A flip chip assembly, comprising:
a semiconductor die having a core area and a periphery area, the periphery area including an electrostatic discharge (ESD) means and including at least one means for supplying power;
a substrate coupled to the semiconductor die via a plurality of electrically conductive bumps;
first means for coupling power located within the semiconductor die core area to couple power between the substrate and the semiconductor die power conductor, an electrically conductive bump to connect between the first means for coupling power and the substrate; and
the ESD means coupled to the first means for coupling power.
15. The flip chip assembly of claim 14 further comprising second means for coupling power located over and electrically coupled to the ESD means; and
the substrate including a first conductive trace to couple the first means for coupling power to the second means for coupling power such that the ESD means is coupled to the first means for coupling power through the first conductive trace.
16. The flip chip assembly of claim 14 wherein the semiconductor die further comprises a second conductive trace coupled between the first means for coupling power and the ESD means.
17. The flip chip assembly of claim 16 wherein the semiconductor die further comprises a redistribution layer; and
the redistribution layer includes the second conductive trace.
18. The flip chip assembly of claim 14 further including at least third means for coupling power located in the semiconductor die core area, and the third means for coupling power being coupled to the ESD means.
19. The flip chip assembly of claim 14 wherein the substrate is selected from the group consisting of circuit boards, carriers, and intermediate substrates.