1. A method of providing a vertical take-off and landing aircraft, comprising the steps of:
providing a fuselage;
extending a left wing from a left side of said fuselage and extending a right wing from a right side of said fuselage;
retaining a first left lift rotor in said left wing, retaining at least one second left lift rotor in said left wing behind said first left lift rotor;
retaining a first right lift rotor in said right wing, retaining at least one second right lift rotor in said right wing behind said first right lift rotor; and
providing at least one forward thruster.
2. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
retaining a horizontal stabilizer at a rear of said aircraft.
3. The method of providing a vertical take-off and landing aircraft of claim 2, further comprising the step of:
extending a vertical stabilizer from said horizontal stabilizer.
4. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
rotating at least one of said at least two left lift rotors in a direction opposite that of at least one of said at least two right lift rotors.
5. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
retaining a nose rotor in a nose of said fuselage.
6. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the steps of:
retaining a left air brake on a left front of said horizontal stabilizer; and retaining a right air brake on a right front of said horizontal stabilizer.
7. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
providing said at least two left lift rotors and said at least two right lift rotors with collective pitch.
8. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
tilting one of said at least one second left lift rotors to provide some rearward thrust, tilting one of said at least one second right lift rotors to provide some rearward thrust.
9. The method of providing a vertical take-off and landing aircraft of claim 1, further comprising the step of:
controlling the attitude of said aircraft while hovering with a central flight computer.
10. A method of providing a vertical take-off and landing aircraft, comprising the steps of:
providing a fuselage;
extending a left wing from a left side of said fuselage and extending a right wing from a right side of said fuselage;
retaining a first left lift rotor in said left wing, retaining at least one second left lift rotor in said left wind behind said first left lift rotor;
retaining a first right lift rotor in said right wing, retaining at least one second right lift rotor in said right wing behind said first right lift rotor, providing said at least two left lift rotors and said at least two right lift rotors with collective pitch; and
providing at least one forward thruster.
11. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the step of:
retaining a horizontal stabilizer at a rear of said aircraft.
12. The method of providing a vertical take-off and landing aircraft of claim 11, further comprising the step of;
extending a vertical stabilizer from said horizontal stabilizer.
13. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the step of:
rotating at least one of said at least two left lift rotors in a direction opposite that of at least one of said at least two right lift rotors.
14. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the step of:
retaining a nose rotor in a nose of said fuselage.
15. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the steps of:
retaining a left air brake on a left front of said horizontal stabilizer; and retaining a right air brake on a right front of said horizontal stabilizer.
16. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the step of:
tilting one of said at least one second left lift rotors to provide some rearward thrust, tilting one of said at least one second right lift rotors to provide some rearward thrust.
17. The method of providing a vertical take-off and landing aircraft of claim 10, further comprising the step of:
controlling the attitude of said aircraft while hovering with a central flight computer.
18. A method of providing a vertical take-off and landing aircraft, comprising the steps of:
providing a fuselage;
extending a left wing from a left side of said fuselage and extending a right wing from a right side of said fuselage;
retaining at least two left lift rotors adjacent a left side of said fuselage, retaining at least two right lift rotors adjacent to a right side of said fuselage;
retaining a first left lift rotor in said left wing, retaining at least one second left lift rotor in said left wing behind said first left lift rotor;
retaining a first right lift rotor in said right wing, retaining at least one second right lift rotor in said right wing behind said first right lift rotor; and
terminating a rear of said aircraft with a twin tail empennage; and
retaining at least one forward thruster at a rear of said fuselage.
19. The method of providing a vertical take-off and landing aircraft of claim 18, further comprising the step of:
said twin tail empennage including a horizontal stabilizer and a vertical stabilizer from said horizontal stabilizer.
20. The method of providing a vertical take-off and landing aircraft of claim 18, further comprising the step of:
rotating at least one of said at least two left lift rotors in a direction opposite that of at least one of said at least two right lift rotors.
21. The method of providing a vertical take-off and landing aircraft of claim 18, further comprising the step of:
providing said at least two left lift rotors and said at least two right lift rotors with collective pitch.
22. The method of providing a vertical take-off and landing aircraft of claim 18, further comprising the step of:
tilting one of said at least one second left lift rotors to provide some rearward thrust, tilting one of said at least one second right lift rotors to provide some rearward thrust.
23. The method of providing a vertical take-off and landing aircraft of claim 18, further comprising the step of:
controlling the attitude of said aircraft while hovering with a central flight computer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1-12. (canceled)
13. A method of forming a semiconductor device comprising:
providing a substrate having an active region prepared with a transistor; and
forming a stress structure comprising a dielectric layer having nanocrystals embedded therein, wherein the nanocrystals induce a first or a second stress on a channel region of the transistor which improves carrier mobility of the transistor.
14. The method of claim 13 wherein forming the stress structure comprises:
implanting nanocrystals into the dielectric layer using ion implantation;
annealing the dielectric layer with germanium hydride precursors; or
co-sputtering the dielectric layer using germanium and silicon oxide target.
15. The method of claim 14 wherein the nanocrystals comprise Ge nanocrystals.
16. The method of claim 15 wherein the dielectric layer comprises about 4-8 at % of Ge nanocrystals.
17. The method of claim 13 wherein:
the stress structure is disposed on sidewalls of the transistor;
the stress structure is disposed beneath a surface of the substrate; or
the stress structure is disposed on an isolation region along a width of the substrate.
18. The method of claim 13 wherein:
the transistor is a n-type transistor;
the stress structure is disposed on sidewalls of the transistor; and
the nanocrystals apply the first stress having a compressive stress and induce the second stress comprising a tensile stress on the channel of the transistor.
19. The method of claim 13 wherein:
the transistor is a n-type transistor;
the stress structure is disposed beneath a surface of the substrate; and
the nanocrystals apply the first stress having a compressive stress and induce the second stress comprising a tensile stress on the channel of the transistor.
20. The method of claim 13 wherein:
the transistor is a p-type transistor;
the stress structure is disposed on an isolation region along a width of the substrate; and
the nanocrystals apply the first stress having a compressive stress and induce the first stress on the channel of the transistor.
21. A method of forming a semiconductor device comprising:
providing a substrate having an active region prepared with a transistor, wherein the transistor comprises a gate stack, sourcedrain diffusion regions adjacent to the gate stack and a channel in the substrate beneath the gate stack and between the sourcedrain diffusion regions; and
forming a stress structure comprising a dielectric layer having nanocrystals embedded therein, wherein the nanocrystals induce a first or a second stress on the channel region of the transistor which improves carrier mobility of the transistor.
22. The method of claim 21 wherein:
the transistor is a n-type transistor;
the stress structure is disposed on sidewalls of the transistor; and
the nanocrystals apply the first stress having a compressive stress and induce the second stress comprising a tensile stress on the channel of the transistor.
23. The method of claim 21 wherein:
the transistor is a n-type transistor;
the stress structure is disposed beneath a surface of the substrate; and
the nanocrystals apply the first stress having a compressive stress and induce the second stress comprising a tensile stress on the channel of the transistor.
24. The method of claim 21 wherein:
the transistor is a p-type transistor;
the stress structure is disposed on an isolation region along a width of the substrate; and
the nanocrystals apply the first stress having a compressive stress and induce the first stress on the channel of the transistor.
25. The method of claim 21 wherein providing the stress structure comprises:
implanting nanocrystals into the dielectric layer using ion implantation;
annealing the dielectric layer with germanium hydride precursors; or
co-sputtering the dielectric layer using germanium and silicon oxide target.
26. The method of claim 21 wherein the stress structure comprises sidewall spacers, buried dielectric layer or shallow trench isolation regions.
27. The method of claim 21 wherein the dielectric layer comprises silicon oxide, high-k dielectric material, nitride or high aspect ratio process (HARP) dielectric material.
28. A method of forming an integrated circuit comprising:
providing a substrate prepared with a device region and a device structure on the substrate in the device region; and
forming a stress structure comprising a dielectric layer having nanocrystals embedded therein, wherein the nanocrystals induce a first or a second stress on the region includes the substrate beneath the device structure which improves carrier mobility of the device.
29. The method of claim 28 wherein providing the stress structure comprises:
implanting nanocrystals into the dielectric layer using ion implantation;
annealing the dielectric layer with germanium hydride precursors; or
co-sputtering the dielectric layer using germanium and silicon oxide target.
30. The method of claim 29 wherein the nanocrystals comprise Ge nanocrystals.
31. The method of claim 30 wherein the dielectric layer comprises about 4-8 at % of Ge nano crystals.
32. The method of claim 28 wherein:
the stress structure is disposed on sidewalls of the device structure;
the stress structure is disposed beneath a surface of the substrate; or
the stress structure is disposed on an isolation region along a width of the substrate.
33. The method of claim 28 wherein the stress structure comprises sidewall spacers, buried dielectric layer or shallow trench isolation regions.