1. A method for manufacturing a semiconductor device, the method comprising:
(a) forming an oxide film;
(b) etching the oxide film to define a storage electrode area;
(c) forming a storage electrode in the storage electrode area;
(d) forming a photoresist film pattern on the oxide film for storage electrode in the peripheral circuit area; and
(e) removing the oxide film for storage electrode in the cell area via a wet etching process using the photoresist film pattern as a mask, and removing the photoresist film pattern to provide a resulting structure;
2. The method according to claim 1, wherein step (e) comprises removing the oxide film for the storage electrode in the cell area in a BOE (Buffered Oxide Etchant) solution bath using the photoresist film pattern as a mask, and removing the photoresist film pattern of the resulting structure in a Piranha solution bath, and further comprises cleaning the resulting structure in an SC-1 solution bath and cleaning the resulting structure in a diluted HF solution bath.
3. The method according to claim 2, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 ranges from 2:1 to 6:1, and has a temperature ranging from 90 to 130\xb0 C.
4. The method according to claim 2, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 is 4:1, and has a temperature of 120\xb0 C.
5. The method according to claim 2, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O ranging from 1:1:20 to 1:5:50, and has a temperature ranging from 25 to 85\xb0 C.
6. The method according to claim 2, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O is 1:4:20, and has a temperature of 65\xb0 C.
7. The method according to claim 1, wherein step (e) further comprises removing the oxide film for the storage electrode in the cell area in a BHF (Buffered Hydrogen Fluoride) solution bath by using the photoresist film pattern as a mask, cleaning the resulting structure in a pure water bath, and removing the photoresist film pattern of the resulting structure in a Piranha solution bath, and further comprises rinsing the resulting structure in a pure water bath, and drying the resulting structure in a dryer.
8. The method according to claim 7, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 ranging from 2:1 to 6:1, and has a temperature ranging from 90 to 130\xb0 C.
9. The method according to claim 7, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 is 4:1, and has a temperature of 120\xb0 C.
10. The method according to claim 7, further comprising cleaning the resulting structure in an SC-1 solution, and rinsing the resulting structure in a water bath, prior to the drying of the resulting structure in a dryer.
11. The method according to claim 7, further comprising rinsing the resulting structure in an SC-1 solution bath, rinsing the resulting structure in a water bath, rinsing the resulting structure in a diluted HF solution bath, and cleaning the resulting structure in a water bath, prior to the drying of the resulting structure in a dryer.
12. The method according to claim 7, further comprising cleaning the resulting structure in a diluted HF solution bath, rinsing the resulting structure in a water bath, cleaning the resulting structure in an SC-1 solution bath, and rinsing the resulting structure in a water bath, prior to the drying of the resulting structure in a dryer.
13. The method according to claim 10, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O ranging from 1:1:20 to 1:5:50, and has a temperature ranging from 25 to 85\xb0 C.
14. The method according to claim 10, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O is 1:4:20, and has a temperature of 65\xb0 C.
15. A method for manufacturing a semiconductor device, comprising:
(a) removing an oxide film for storage electrode in a cell area of a semiconductor substrate, wherein a storage electrode is disposed in the cell area, and a photoresist film pattern is disposed in peripheral circuit region of the semiconductor substrate by performing a wet etching process in a BHF (Buffered Hydrogen Fluoride) solution bath; and
(b) removing the photoresist film pattern with a Piranha solution bath to provide a resulting structure.
16. The method according to claim 15, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 ranging from 2:1 to 6:1, and has a temperature ranging from 90 to 130\xb0 C.
17. The method according to claim 15, wherein the Piranha solution comprises H2SO4 and H2O2, the volume ratio of the H2SO4 to H2O2 is 4:1, and has a temperature of 120\xb0 C.
18. The method according to claim 15, further comprising cleaning the resulting structure in an SC-1 solution bath, and rinsing the resulting structure in a water bath, prior to the drying of the resulting structure in a dryer.
19. The method according to claim 15, further comprising cleaning the resulting structure in an SC-1 solution bath, rinsing the resulting structure in a pure water bath, cleaning the resulting structure in a diluted HF solution bath, and rinsing the resulting structure in a pure water bath, prior to the drying of the resulting structure in a dryer.
20. The method according to claim 15, further comprising cleaning the resulting structure in a diluted HF solution bath, rinsing the resulting structure in a water bath, cleaning the resulting structure in an SC-1 solution bath, and rinsing the resulting structure in a pure water bath, prior to the drying of the resulting structure in a dryer.
21. The method according to claim 18, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O ranging from 1:1:20 to 1:5:50, and has a temperature ranging from 25 to 85\xb0 C.
22. The method according to claim 18, wherein the SC-1 solution comprises NH4OH, H2O2 and H2O, the volume ratio of the NH4OH, H2O2 and H2O is 1:4:20, and has a temperature of 65\xb0 C.
23. The method according to claim 1, further comprising (f) sequentially forming a dielectric film and a plate electrode on the entire surface of the resulting structure.
24. The method of according to claim 23, further comprising (g) forming an interlayer insulating film on the entire surface of the resulting film an interior insulting film on the entire surface of the resulting structure.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mail item incorporating an information block which provides a three-dimensional array of addressable data elements for storing information, wherein the three-dimensional array defines a plurality of layers to which information can be written.
2. The mail item of claim 1, wherein the information block comprises a carrier including a photochromic storage material having first and second states, and a readout material for providing an indication of the state of the storage material at its location.
3. The mail item of claim 1, wherein the stored information includes encoded information.
4. The mail item of claim 3, wherein the encoded information is encrypted information.
5. The mail item of claim 3, wherein the encoded information is cryptographically-signed information.
6. The mail item of claim 1, wherein the information block comprises an applied coating.
7. The mail item of claim 1, wherein the information block defines at least part of a body of the mail item.
8. The mail item of claim 1, wherein the mail item comprises a container.
9. The mail item of claim 1, wherein the mail item comprises an envelope.
10. The mail item of claim 1, wherein the mail item is re-usable, such that, on each use, information is written to a different layer of the information block.
11. Use, as a re-usable item, of a mail item incorporating an information block which provides a three-dimensional array of addressable data elements for storing information, with the three-dimensional array defining a plurality of layers to which information can be written.
12. A mail handling system, comprising:
an information reader for reading information from an information block, as a three-dimensional array of addressable data elements, incorporated in a mail item, with the three-dimensional array defining a plurality of layers to which information can be written, and identifying the last written layer in which information is stored; and
an information writer for writing new information in a subsequent layer of the three-dimensional array of the information block.
13. The mail handling system of claim 12, wherein the information writer is configured such as to over-write the last written layer of the three-dimensional array of the information block and thereby zeroise that layer.