1. A thick film green sheet slurry comprising a ceramic powder, a binder resin including a butyral based resin as a main component, and a solvent, wherein:
said solvent includes a good solvent, well dissolving said binder resin, and a poor solvent having a lower solubility to said binder resin comparing with that of said good solvent; and
said poor solvent is included in a range or 30 to 60 wt % with respect to the entire solvent.
2. The thick film green sheet slurry as set forth in claim 1, wherein said poor solvent includes a solvent having a higher boiling point than that of said good solvent.
3. The thick film green sheet slurry as set forth in claim 1, wherein said good solvent is alcohol, and said poor solvent includes at least one of toluene, xylene, mineral spirit, benzyl acetate, solvent naphtha, industrial gasoline, kerosene, heptanone and ethylbenzene.
4. The thick film green sheet slurry as set forth in claim 1, wherein
said butyral based resin is a polyvinyl butyral resin; and
a polymerization degree of said polyvinyl butyral resin is 1000 or higher and 1700 or lower, a butyralation degree of the resin is higher than 64% and lower than 78%, and a residual acetyl amount is lower than 6%.
5. The thick film green sheet slurry as set forth in claim 1, wherein said binder resin is included in an amount of to 6.5 parts by weight with respect to 100 parts by weight of said ceramic powder.
6. A production method of the thick fin green sheet slurry as set forth in claim 1, wherein:
a ceramic powder is pulverized, so that an average particle diameter of the ceramic powder after being dispersed in said thick film green sheet slurry does not become smaller than 80% with respect to an average particle diameter of the ceramic powder before being dispersed in said thick film green sheet slurry.
7. A production method of a thick film green sheet, comprising the steps of:
preparing the thick film green sheet slurry as set forth in claim 1; and
forming a thick film green sheet by using said thick film green sheet slurry.
8. A thick film green sheet produced by using the thick film green sheet slurry as set forth claim 1.
9. A production method of a ceramic electronic device, comprising the steps of:
preparing the thick film green sheet slurry as set forth claim 1;
forming an outer green sheet by using said thick film green sheet slurry;
preparing thin film green sheet slurry including a same kind of binder resin as a binder resin included in said thick film green sheet slurry;
forming a thinner inner green sheet than said outer green sheet by using said thin film green sheet slurry; obtaining a multilayer body by stacking said inner green sheets via internal electrode layers;
obtaining a green chip by stacking said outer green sheet on both end surfaces in the stacking direction of said multilayer body; and
firing said green chip.
10. A production method of a ceramic electronic device as set forth in claim 9, wherein said thin layer green sheet slurry includes a same kind of ceramic powder as a ceramic powder included in said thick film green sheet slurry.
11. The production method of a ceramic electronic device as set forth in claim 9, wherein an average particle diameter of the ceramic powder included in said thin film green sheet slurry is smaller than an average particle diameter of the ceramic powder included in said thick film green sheet slurry.
12. The production method of a ceramic electronic device as set forth in claim 11, comprising the steps of:
pulverizing a ceramic powder, so that an average particle diameter of the ceramic powder after being dispersed in said thick film green sheet slurry does not become smaller than 80% with respect to an average particle diameter of the ceramic powder before being dispersed in said thick film green sheet slurry; and
pulverizing a ceramic powder, so that an average particle diameter of the ceramic powder after being dispersed in said thin film green sheet slurry becomes 80% or smaller with respect to an average particle diameter of the ceramic powder before being dispersed in said thin film green sheet slurry.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for fabricating a semiconductor comprising:
providing a semiconductor body having a p-conducting zone, having an n-conducting zone and having a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone,
producing the p-conducting zone by the diffusion of an impurity that forms an acceptor in a first direction from a first surface of the semiconductor body into the semiconductor body,
producing the n-conducting zone by the implantation of protons via the first surface of the semiconductor body in the first direction into the semiconductor body into a depth T2 >T1 and the subsequent heat treatment of the semiconductor body forming hydrogen-induced donors,
wherein the impurity forms an acceptor in combination with a proton implantation.
2. The method of claim 1, comprising providing the impurity as a layer on the semiconductor body.
3. The method of claim 1, comprising implanting the impurity prior to the diffusion into a depth T3 <T1 into the semiconductor body.
4. The method of claim 1, comprising defining the impurity as platinum.
5. The method of claim 1, wherein the impurity is a rapidly diffusing heavy metal.
6. The method of claim 5, wherein the diffusion of the impurity is carried out at a temperature in the range of 700\xb0 C. to 1000\xb0 C.
7. A method for fabricating a semiconductor comprising:
providing a semiconductor body having a p-conducting zone, having an n-conducting zone and having a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone,
producing the p-conducting zone by the diffusion of an impurity that forms an acceptor in a first direction from a first surface of the semiconductor body into the semiconductor body,
producing, after producing the p-conducting zone, the n-conducting zone by the implantation of protons via the first surface of the semiconductor body in the first direction into the semiconductor body into a depth T2 >T1 and the subsequent heat treatment of the semiconductor body forming hydrogen-induced donors;
wherein the p-conducting zone is locally delimited in the semiconductor body; and
wherein the impurity forms an acceptor in combination with a proton implantation.
8. The method of claim 7, wherein the local delimitation is effected by providing the impurity in a locally delimited manner.
9. The method of claim 7, wherein the implantation of the protons is carried out with an implantation dose in the range of 1 \xd71014 cm\u22122 to 2 \xd71015cm\u22122.
10. The method of claim 7, comprising using a mask to locally delimit the implantation of the protons.
11. The method of claim 7, wherein the heat treatment of the semiconductor body for producing the n-conducting zone is effected with a temperature in the range of between 450\xb0 C. and 550\xb0 C.
12. The method of claim 7, wherein the heat treatment of the semiconductor body for producing the n-conducting zone is effected over a time period in the range of 30 min to 12 h.
13. The method of claim 7, wherein the semiconductor body is provided in a manner having a p-type basic doping.
14. The method of claim 13, wherein the concentration of the p-type basic doping is less than 1 \xd71015cm\u22123.
15. The method of claim 7, wherein the depth T1 of the pn junction is more than 15 \u03bcm.
16. The method of claim 7, wherein the depth T1 of the pn junction corresponds to more than 20% of the extent of the semiconductor body in the first direction.
17. The method of claim 7, wherein the depth T1 of the pn junction corresponds to more than 40% of the extent of the semiconductor body in the first direction.
18. A method for fabricating a semiconductor comprising:
providing a semiconductor body having a p-conducting zone, having an n-conducting zone and having a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone,
producing the p-conducting zone by the diffusion of an impurity that forms an acceptor in a first direction from a first surface of the semiconductor body into the semiconductor body,
producing, after producing the p-conducting zone, the n-conducting zone by the implantation of protons via the first surface of the semiconductor body in the first direction into the semiconductor body into a depth T2 >T1 and the subsequent heat treatment of the semiconductor body forming hydrogen-induced donors;
wherein the semiconductor body is thinned at a second surface opposite the first surface in a second direction opposite the first direction at least as far as the depth T2; and
wherein the impurity forms an acceptor in combination with a proton implantation.
19. The method as claimed in claim 18, wherein the semiconductor body is thinned right into the n-conducting zone in the region between T1 and T2.
20. A method for fabricating a semiconductor comprising:
providing a semiconductor body having a p-conducting zone, having an n-conducting zone and having a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone,
producing the p-conducting zone by the diffusion of an impurity that forms an acceptor in a first direction from a first surface of the semiconductor body into the semiconductor body,
producing, after producing the p-conducting zone, the n-conducting zone by the implantation of protons via the first surface of the semiconductor body in the first direction into the semiconductor body into a depth T2 >T1 and the subsequent heat treatment of the semiconductor body forming hydrogen-induced donors;
wherein the p-conducting zone has a net acceptor-donor concentration N1 having a maximum change \u0394N1 by the factor over a distance of 5 \u03bcm at the pn junction; and
wherein the impurity forms an acceptor in combination with a proton implantation.
21. The method of claim 20, wherein the maximum change in the p-conducting zone is applicable at least over a section S = 12 T1 in the first direction.
22. The method of claim 20, wherein the n-conducting zone has a net acceptor-donor concentration N2 having a maximum change \u0394N2 by the factor over a distance of 10 \u03bcm at the pn junction.
23. The method of claim 21, wherein the maximum change in the n-conducting zone is applicable at least over a section S =(T2\u2212T1)2 in the second direction.