What is claimed is:
1. A method of manufacturing an integrated circuit having trench isolation regions in a substrate including germanium, the method comprising:
forming a silicon nitride layer above the substrate;
selectively etching the silicon nitride layer to form apertures associated with locations of the trench isolation regions;
forming trenches in the substrate at the locations; and
forming oxide liners in the trenches of the substrate in a low temperature process.
2. The method of claim 1, further comprising providing an insulative material in the trenches to form the trench isolation regions.
3. The method of claim 2, further comprising removing the insulative material until the silicon nitride layer is reached.
4. The method of claim 1, wherein the low temperature process is one of a UVO process, an ALD process, a PECVD oxide deposition process without NH3, and an HDP oxide deposition process without NH3.
5. The method of claim 1, wherein the low temperature process is a low concentration SiH4 process at a temperature below 700 C.
6. The method of claim 1, wherein the low temperature process has a low concentration of hydrogen.
7. The method of claim 1, wherein the low temperature process is a UVO process performed at a temperature of less than 600 C.
8. The method of claim 1, wherein the low temperature process is an ALD process.
9. A method of forming shallow trench isolation regions in a semiconductor layer, the method comprising:
providing a hard mask layer above the semiconductor layer;
providing a photoresist layer above the hard mask layer;
selectively removing portions of the photoresist layer at locations in a photolithographic process;
removing the hard mask layer at the locations;
forming trenches in the hard mask layer under the locations; and
forming a liner in the trenches using ultraviolet light.
10. The method of claim 9, further comprising providing a pad oxide layer above a strained silicon layer before the providing a hard mask layer step.
11. The method of claim 10, further comprising removing the pad oxide layer at the locations before the first forming step.
12. The method of claim 9, further comprising:
providing an insulative material in the trenches to form the shallow trench isolation regions; and
removing the hard mask layer in a wet bath.
13. The method of claim 12, wherein the wet bath includes acid.
14. The method of claim 9, wherein the forming a liner step is a low temperature process.
15. The method of claim 14, wherein the low temperature process is below 700 C.
16. The method of claim 15, wherein the liner is silicon dioxide grown in an oxygen atmosphere.
17. A method of forming a liner in a trench in a germanium containing layer, the method comprising:
selectively etching the germanium containing layer to form the trench; and
providing the liner in the trench in a low temperature process.
18. The method of claim 17, wherein the low temperature process is one of a UVO process, an ALD process, a PECVD oxide deposition process without NH3, and an HDP oxide deposition process without NH3.
19. The method of claim 17, wherein the low temperature process is a UVO process utilizing an oxygen atmosphere and ultraviolet light.
20. The method of claim 19, wherein the liner is 200-500 thick.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An exposure apparatus which exposes a substrate, comprising:
a light source which generates an exposure light beam;
an illumination system which illuminates a first pattern with a first exposure light beam and which illuminates a second pattern with a second exposure light beam;
a moving unit which moves the first pattern and the second pattern relative to the substrate; and
a movable blind which is movable in synchronization with movement of at least one of the first pattern, the second pattern, and the substrate and which has a first area allowing only the first exposure light beam to pass therethrough, a second area allowing only the second exposure light beam to pass therethrough, and a third area allowing both of the first exposure light beam and the second exposure light beam to pass therethrough,
wherein:
a predetermined area on the substrate is multiply exposed by radiating the first exposure light beam from the first pattern and the second exposure light beam from the second pattern onto the predetermined area on the substrate, and
the illumination system radiates the first exposure light beam at a different point in time than the second exposure light beam.
2. The exposure apparatus according to claim 1, wherein the movable blind is moved in synchronization with the first pattern and the second pattern while the first pattern and the second pattern are being moved in synchronization with the substrate.
3. The exposure apparatus according to claim 2, wherein the first, second, and third areas are arranged and aligned in an arrangement direction in which the first pattern and the second pattern are arranged; and the third area is provided between the first area and the second area.
4. The exposure apparatus according to claim 2, wherein the first pattern corresponds to the first area and the third area, and the second pattern corresponds to the second area and the third area.
5. The exposure apparatus according to claim 2, wherein the first exposure light beam and the second exposure light beam are linearly polarized light beams which are perpendicular to each other; and the movable blind includes a polarizing plate.
6. The exposure apparatus according to claim 1, further comprising an adjusting unit which radiates the first exposure light beam passed through the first area and the first exposure light beam passed through the third area at a same intensity onto the substrate, and which radiates the second exposure light beam passed through the second area and the second exposure light beam passed through the third area at a same intensity onto the substrate.
7. The exposure apparatus according to claim 1, wherein a number of times of imaging effected by an optical system arranged between the light source and the first pattern and the second pattern is set by moving the movable blind to avoid unnecessary exposure for the substrate with the first exposure light beam and the second exposure light beam.
8. The exposure apparatus according to claim 1, wherein a liquid immersion area is formed on the substrate; and the first exposure light beam and the second exposure light beam are radiated onto the predetermined area on the substrate through a liquid of the liquid immersion area.
9. A method for producing a device, comprising:
performing multiple exposure for a substrate by using the exposure apparatus as defined in claim 1;
developing the substrate for which the multiple exposure has been performed; and
processing the developed substrate.