1-78. (canceled)
79. A method of producing an enzyme variant, comprising introduction a mutation in the amino acid sequence of a parent endoglucanase at one or more positions selected from the group consisting of:
2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 21a, 22, 24, 25, 26, 28, 29, 32, 33, 34, 35, 37, 40, 42, 42a, 43, 44, 45, 47, 48, 49, 49a, 49b, 50, 53, 54, 55, 58, 59, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 79, 80, 82, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 95, 95d, 95h, 95j, 96, 97, 98, 99, 100, 101, 102, 103, 104, 106, 110, 111, 112, 113, 114, 115, 116, 117, 119, 121, 123, 127, 128, 129, 130, 131, 132, 132a, 133, 134, 136, 137, 138, 139, 140, 140a, 141, 143a, 145, 146, 147, 148, 149, 150b, 150e, 150j, 151, 152, 153, 154, 155, 156, 157, 158, 159, 160c, 160e, 160k, 161, 162, 163, 164, 165, 166, 168, 169, 170, 171, 172, 173, 174, 175, 176, 177, 178, 179, 180, 181, 183, 184, 185, 186, 188, 191, 192, 193, 195, 196, 197, 200, and 201,
wherein each mutation is independently a substitution, insertion or deletion, the enzyme variant has endoglucanase activity and each position is numbered according to the amino acid sequence of the cellulase of SEQ ID NO: 1.
80. The method of claim 79, wherein the parent endoglucanase comprises the amino acid sequence of SEQ ID NO: 1.
81. The method of claim 79, wherein the mutation is one or more of the following:
K13L or L13K;
P14A or A14P;
S15H or H15S;
K20E, K20G, K20A, E20K, G20K, A20K, E20G, E20A, G20E, A20E, G20A, or A20G;
K21N or N21K;
A22G, A22P, G22A, P22A, G22P, or P22G;
V24*, V24L, *24V, L24V, *24L, or L24*;
V28A, V28L, A28V, L28V, A28L, or L28A;
N32D, N32S, N32K, D32N, S32N, K32N, D32S, D32K, S32D, K32D, S32K, or K32S;
N34D or D34N;
I38L, I38F, I38Q, L38I, F38I, Q38I, L38F, L38Q, F38L, Q38L, F38Q, or Q38F;
S45N or N45S;
G46S or S46G;
E48D, E48N, D48E, N48E, D48N, or N48D;
G50N or N50G;
A53S, A53G, A53K, S53A, G53A, K53A, S53G, S53K, G53S, K53S, G53K, or K53G;
Y54F or F54Y;
W62F or F62W;
A63D or D63A;
V64I, V64D, I64V, D64V, I64D, or D64I;
N65S, N65D, N65E, S65N, D65N, E65N, S65D, S65E, D65S, E65S, D65E, or E65D;
D66N, D66P, D66T, N66D, P66D, T66D, N66P, N66T, P66N, T66N, P66T, or T66P;
F68V, F68L, F68T, F68P, V68F, L68F, T68F, P68F, V68L, V68T, V68P, L68V, T68V, P68V, L68T, L68P, T68L, P68L, T68P, or P68T;
A69S, A69T, S69A, T69A, S69T, or T69S;
L70Y or Y70L;
G71A or A71G;
F72W, F72Y, W72F, Y72F, W72Y, or Y72W;
A73G or G73A;
A74F or F74A;
T75V, T75A, T75G, V75T, A75T, G75T, V75A, V75G, A75V, G75V, A75G, or G75A;
G79T or T79G;
W85T or T85W;
A88Q, A88G, A88R, Q88A, G88A, R88A, Q88G, Q88R, G88Q, R88Q, G88R, or R88G;
Y90F or F90Y;
L92A or A92L;
T93Q, T93E, Q93T, E93T, Q93E, or E93Q;
T95E or E95T;
S96T or T96S;
G97T, G97A, T97G, A97G, T97A, or A97T;
P98A or A98P;
V99L or L99V;
M104L or L104M;
V106F or F106V;
S110N or N110S,
T111I, T111V, I111T, V111T, I111V, or V111I;
G113Y or Y113G;
L115V or V115L;
G116S, G116Q, S116G, Q116G, S116Q, or Q116S;
N118T, N118G, N118Q, T118N, G118N, Q118N, T118G, T118Q, G118T, Q118T, G118Q, or Q118G;
H119Q, H119N, Q119H, or N119H;
V129L or L129V;
I131L, I131A, L131I, A131I, L131A, or A131L;
G134A or A134G;
Q138E or E138Q;
G140N or N140G;
R146Q or Q146R;
S152D or D152S;
R153K, R153L, R153A, K153R, L153R, A153R, K153L, K153A, L153K, A153K, L153A, or A153L;
L163V, L163W, V163L, W163L, V163W, or W163V;
G166S or S166G;
W169F or F169W;
R170F or F170R;
F171Y, F171A, Y171F, A171F Y171A, or A171Y;
D172E, D172S, E172D, S172D, E172S, or S172E;
W173E or E173W;
F174M, F174W, M174F, W174F, M174W, or W174M;
A177N or N177A;
D178P or P178D;
N179V or V179N;
P180L or L180P;
L1931 or I193L;
R1961, R196K, I196R, K196R, I196K, or K196I, andor
T197S or S197T.
82. The method of claim 79, wherein the mutation is one or more of the following:
in position 4 holds R, H, K, Q, V, Y, or M;
in position 5 holds S, T, or A;
in position 13 holds K, or L;
in position 14 holds P, or A;
in position 15 holds H, or S;
in position 16 holds C, or A;
in position 19 holds A, D, S, P, T, or E;
in position 20 holds A, E, G, or K;
in position 21 holds K, or N;
in position 21a holds V or *;
in position 22 holds A, G, or P;
in position 24 holds L, V, or *;
in position 28 holds A, L, or V;
in position 32 holds D, K, N, or S;
in position 34 holds D or N;
in position 38 holds F, I, L, or Q;
in position 42 holds D, G, T, N, S, K, or *;
in position 44 holds K, V, R, Q, G, or P;
in position 45 holds N, or S;
in position 46 holds G, or S;
in position 47 holds C, or Q;
in position 48 holds D, E, N, or S;
in position 49 holds P, S, A, G, or *;
in position 49a holds C, or *;
in position 49b holds N, or *;
in position 50 holds G, or N;
in position 53 holds A, G, K, or S;
in position 54 holds F, or Y;
in position 62 holds F, or W;
in position 63 holds A, or D;
in position 64 holds D, I, or V;
in position 65 holds D, E, N, or S;
in position 68 holds D, N, P, or T;
in position 69 holds A, S, or T;
in position 70 holds L, or Y;
in position 71 holds A, or G;
in position 72 holds F, W, or Y;
in position 73 holds A, or G;
in position 74 holds A, or F;
in position 75 holds A, G, T, or V;
in position 79 holds G, or T;
in position 82 holds E, or *;
in position 88 holds A, G, Q, or R;
in position 90 holds F, or Y;
in position 92 holds A, or L;
in position 93 holds E, Q, or T;
in position 95 holds E, or T;
in position 95j holds P, or *;
in position 96 holds S, or T;
in position 97 holds A, G, or T;
in position 98 holds A, or P;
in position 99 holds L, or V;
in position 104 holds L, or M;
in position 106 holds F, or V;
in position 110 holds N, or S;
in position 111 holds I, T, or V;
in position 113 holds G, or Y;
in position 115 holds L, or V;
in position 116 holds G, Q, or S;
in position 118 holds G, N, Q, or T;
in position 119 holds H, N, or Q;
in position 129 holds L, or V;
in position 131 holds A, I, or L;
in position 132 holds A, P, or T;
in position 133 holds D, K, N, or Q;
in position 134 holds A, or G;
in position 138 holds E, or Q;
in position 145 holds A, D, N, or Q;
in position 146 holds Q, or R;
in position 150b holds A, or *;
in position 152 holds D, or S;
in position 153 holds A, K, L, or R;
in position 163 holds L, V, or W;
in position 166 holds G, or S;
in position 169 holds F, or W;
in position 170 holds F, or R;
in position 171 holds A, F, or Y;
in position 172 holds D, E, or S;
in position 173 holds E, or W;
in position 174 holds F, M, or W;
in position 177 holds A, or N;
in position 178 holds D, or P;
in position 179 holds N, or V;
in position 180 holds L, or P;
in position 193 holds I, or L;
in position 196 holds I, K, or R; andor
in position 197 holds S, or T.
83. The method of claim 79, wherein the mutation is one or more of the following; C16M+C86G, D42W, D42Y, E48DP49*, E48N1P49* andor L70Y.
84. The method of claim 79, wherein the mutation is one or more of the following:
K13L or L13K;
P14A or A14P;
S15H or H15S;
K20E, K20G, K20A, E20K, G20K, A20K, E20G, E20A, G20E, A20E, G20A, or A20G;
K21N or N21K;
A22G, A22P, G22A, P22A, G22P, or P22G;
V24*, V24L, *24V, L24V, *24L, or L24*;
N32D, N32S, N32K, D32N, S32N, K32N, D32S, D32K, S32D, K32D, S32K, or K32S;
N34D or D34N;
G50N or N50G;
A53S, A53G, A53K, S53A, G53A, K53A, S53G, S53K, G53S, K53S, G53K, or K53G;
Y54F or F54Y;
V64I, V64D, I64V, D64V, I64D, or D64I;
F68V, F68L, F68T, F68P, V68F, L68F, T68F, P68F, V68L, V68T, V68P, L68V, T68V, P68V, L68T, L68P, T68L, P68L, T68P, or P68T;
A69S, A69T, S69A, T69A, S69T, or T69S;
L70Y or Y70L;
G71A or A71G;
G79T or T79G;
W85T or T85W;
A88Q, A88G, A88R, Q88A, G88A, R88A, Q88G, Q88R, G88Q, R88Q, G88R, or R88G;
L92A or A92L;
T93Q, T93E, Q93T, E93T, Q93E, or E93Q;
V106F or F106V;
Q138E or E106Q;
G140N or N140G;
S152D or D152S;
R153K, R153L, R153A, K153R; L153R, A153R, K153L, K153A, L153K, A153K, L153A, or A153L;
G166S or S166G;
W169F or F169W;
R170F or F170R;
F171Y, F171A, Y171F, A171F, Y171A, or A171Y;
D172E, D172S, E172D, S172D, E172S, or S172E;
W173E or E173W;
F174M, F174W, M174F, W174F, M174W, or W174M;
L193I or I193L; andor
T197S or S197T.
85. The method of claim 79, wherein the mutation is one or more of the following:
the amino acid residue at position 22 is A, G, or P;
the amino acid residue at position 24 is L, V, or *;
the amino acid residue at position 32 is D, K, N, or S;
the amino acid residue at position 34 is D or N;
the amino acid residue at position 42 is D, G, T, N, S, K, or *;
the amino acid residue at position 49 is P, S, A, G, or *;
the amino acid residue at position 49a is C or *;
the amino acid residue at position 49b is N or *;
the amino acid residue at position 50 is G or N;
the amino acid residue at position 53 is A, G, K, or S;
the amino acid residue at position 54 is F or Y;
the amino acid residue at position 64 is D, I, or V;
the amino acid residue at position 68 is D, N, P, or T;
the amino acid residue at position 69 is A, S, or T;
the amino acid residue at position 70 is L or Y;
the amino acid residue at position 71 is A or G;
the amino acid residue at position 79 is G or T;
the amino acid residue at position 88 is A, G, Q, or R;
the amino acid residue at position 92 is A or L;
the amino acid residue at position 93 is E, Q, or T;
the amino acid residue at position 95j is P or *;
the amino acid residue at position 106 is F or V;
the amino acid residue at position 138 is E or Q;
the amino acid residue at position 150b is A or *;
the amino acid residue at position 152 is D or S;
the amino acid residue at position 153 is A, K, L, or R;
the amino acid residue at position 166 is C or S;
the amino acid residue at position 169 is F or W;
the amino acid residue at position 170 is F or R;
the amino acid residue at position 171 is A, F, or Y;
the amino acid residue at position 172 is D, E, or S,
the amino acid residue at position 173 is E or W;
the amino acid residue at position 174 is F, M, or W;
the amino acid residue at position 193 is I or L; andor
the amino acid residue at position 197 is S or T.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fin-type field effect transistor comprising:
a source region;
a drain region;
a semiconductor fin that extends from said source region to said drain region; and
a gate conductor adjacent said semiconductor fin between said source region and said drain region at a predetermined position closer to said source region than said drain region such that a first resistance of said semiconductor fin between said source region and said gate conductor is less than a second resistance of said semiconductor fin between said gate conductor and said drain region, and such that a first capacitance between said source region and said gate conductor is greater than a second capacitance between said gate conductor and said drain region.
2. The transistor of claim 1, all the limitations of which are incorporated herein by reference, wherein said semiconductor fin further comprises sourcedrain extension regions between said gate conductor and said source region and between said gate conductor and said drain region.
3. The transistor of claim 1, all the limitations of which are incorporated herein by reference, further comprising a plurality of semiconductor fins that extend from said source region to said drain region, wherein said gate conductor is adjacent said semiconductor fins between said source region and said drain region at said predetermined position closer to said source region.
4. A fin-type field effect transistor comprising:
a source region;
a drain region;
a semiconductor fin that extends from said source region to said drain region; and
a gate conductor adjacent said semiconductor fin between said source region and said drain region,
wherein said semiconductor fin comprises:
a first portion between said source region and said gate conductor, and
a second portion between said gate conductor and said drain region, wherein said first portion and said second portion each comprise an inner section adjacent said gate conductor and having a same width and a same length such that each said inner section has at least a minimum amount of resistance required to enable said transistor to be operable at a predetermined maximum voltage.
5. The transistor of claim 4, all the limitations of which are incorporated herein by reference, wherein each said inner section comprises a corresponding top surface devoid of an adjacent silicide layer.
6. The transistor of claim 4, all the limitations of which are incorporated herein by reference, further comprising dopants in said source region, in said drain region and in said semiconductor fin, wherein a concentration of said dopants in said source region and said drain region is higher than a concentration of said dopants in said semiconductor fin.
7. The structure of claim 4, all the limitations of which are incorporated herein by reference, further comprising a plurality of said semiconductor fins between said source region and said drain region, wherein said resistance within each of said semiconductor fins protects said structure against thermal run-away and destruction.
8. The transistor of claim 4, all the limitations of which are incorporated herein by reference, wherein said semiconductor fin further comprises sourcedrain extension regions between said gate conductor and said source region and between said gate conductor and said drain region.
9. A fin-type field effect transistor comprising:
a source region;
a drain region;
a plurality of semiconductor fins that extend from said source region to said drain region; and
a gate conductor adjacent said semiconductor fins between said source region and said drain region,
wherein each of said semiconductor fins comprises:
a first portion between said source region and said gate conductor, and
a second portion between said gate conductor and said drain region,
wherein said first portion and said second portion each comprise an inner section adjacent to said gate conductor and having a same uniform width and a same length such that each said inner section has at least a minimum amount of resistance required to avoid current run-away and enable said transistor to be operable at a predetermined maximum voltage.
10. The transistor of claim 9, all the limitations of which are incorporated herein by reference, wherein each said inner section comprises a corresponding top surface devoid of an adjacent silicide layer.
11. The transistor of claim 9, all the limitations of which are incorporated herein by reference, further comprising dopants in said source region, in said drain region and in said semiconductor fin, wherein a concentration of said dopants in said source region and said drain region is higher than a concentration of said dopants in said semiconductor fin.
12. The transistor of claim 9, all the limitations of which are incorporated herein by reference, wherein said first portion and said second portion each further comprise an outer section adjacent and wider than said inner section.