1. A vertical memory device, comprising:
a common source region;
source regions formed on the common source region and extending in a first direction;
channel regions formed on each of the source regions, the channel regions extending in the first direction;
trenches formed between the channel regions;
a drain region formed on each of the channel regions;
a conductive layer formed on a side of each of the channel regions, the conductive layer extending to the first direction; and
a data storage material formed on each of the drain regions.
2. The vertical memory device of claim 1, wherein the common source region extends in the first direction and a second direction perpendicular to the first direction.
3. The vertical memory device of claim 1, wherein the common source region extends in a second direction perpendicular to the first direction.
4. The vertical memory device of claim 1, further comprising:
a heating material interposed between each of the drain regions and each of the data storage materials.
5. The vertical memory device of claim 4, further comprising:
a contact plug interposed between each of the drain regions and each of the heating materials.
6. The vertical memory device of claim 1, further comprising:
a bit line, arranged in the second direction perpendicular to the first direction, disposed on the data storage materials.
7. The vertical memory device of claim 6, wherein the vertical memory device is formed on the bit line at least two times.
8. The vertical memory device of claim 6, wherein the vertical memory device is symmetrical with respect to the bit line.
9. The vertical memory device of claim 6, wherein the vertical memory device is symmetrical with respect to the common source region.
10. The vertical memory device of claim 1, wherein the data storage material includes a variable resistive material.
11. A method of fabricating a vertical memory device, the method comprising:
sequentially forming, on a semiconductor substrate, a first junction region, a channel region, and a second junction region;
line-patterning the second junction region, the channel region, and a portion of the first junction region to a first direction to form a line-patterned structure;
forming spacers, made of first insulating layers, and conductive layers on outer sidewalls of the line-patterned structure;
forming second insulating layers on the semiconductor substrate, including the spacers and the conductive layers, and planarizing the second insulating layers to expose the second junction region and the conductive layers;
removing, to a predetermined depth, exposed portions of the conductive layers and forming third insulating layers in spaces from which the exposed portions of the conductive layers are removed; and
patterning the second junction region and a portion of the channel region in a second direction perpendicular to the first direction.
12. The method of claim 11, wherein the first junction region includes a common junction region and a switching junction region extending in first direction.
13. The method of claim 12, wherein the common junction region extends in the first direction and the second direction.
14. The method of claim 12, wherein the common junction region is formed through line-patterning in the second direction.
15. The method of claim 11, wherein the removing the exposed portions of the conductive layers to a predetermined depth includes removing the exposed portions of the conductive layers so that remaining portions of the conductive layers overlap the channel region.
16. The method of claim 11, further comprising:
forming a data storage material, to be electrically connected to the second junction region, after the patterning the second junction region and the channel region in a second direction perpendicular to the first direction.
17. The method of claim 16, wherein the data storage material is formed using a variable resistive material.
18. A method of fabricating a vertical memory device, the method comprising:
sequentially forming a first junction region, a channel region, a second junction region, a heating material, and a sacrificial layer on a semiconductor substrate;
line-patterning, in a first direction, the sacrificial layer, the heating material, the second junction region, the channel region, and a portion of the first junction region to form a line-patterned structure;
forming spacers, made of first insulating layers, and conductive layers on outer sidewalls of the line-patterned structure;
forming second insulating layers on the semiconductor substrate, including the spacers and the conductive layers, and planarizing the second insulating layers to expose the sacrificial layer and the conductive layers;
removing, to a predetermined depth, the exposed portions of the conductive layers and forming third insulating layers in spaces from which the exposed portions of the conductive layers are removed;
patterning, in a second direction perpendicular to the first direction, the sacrificial layer, the heating material, the second junction region, and a portion of the channel region; and
forming a data storage material in a space from which the sacrificial layer is removed.
19. The method of claim 18, wherein the first junction region includes a common junction region and a switching junction region that is line-patterned to extend in first direction.
20. The method of claim 19, wherein the common junction region extends in the first direction and the second direction.
21. The method of claim 19, wherein the common junction region is formed through line-patterning in the second direction.
22. The method of claim 18, wherein the removing the exposed portions of the conductive layers to a predetermined depth includes removing the exposed portions of the conductive layers so that remaining portions of the conductive layers overlap the channel region.
23. The method of claim 18, wherein the data storage material is formed using a variable resistive material.
24. A vertical memory device, comprising:
a common source region;
source regions formed on the common source region, the source regions extending in a first direction;
channel regions formed on each of the source regions, the channel regions extending in the first direction;
a conductive layer formed on each of the source regions in a space between each of the channel regions;
a drain region formed on each of the conductive layers; and
a data storage material formed on each of the drain regions.
25. The vertical memory device of claim 24, wherein the common source region extends in the first direction and a second direction perpendicular to the first direction.
26. The vertical memory device of claim 24, wherein the common source region extends in a second direction perpendicular to the first direction.
27. The vertical memory device of clam 24, further comprising:
a heating material interposed between each of the drain regions and each of the data storage materials.
28. The vertical memory device of claim 27, further comprising:
a contact plug interposed between each of the drain regions and each of the heating materials.
29. The vertical memory device of claim 24, further comprising:
a bit line, arranged in a second direction perpendicular to the first direction, on the data storage materials.
30. The vertical memory device of claim 29, wherein the vertical memory device is formed on the bit line at least two times.
31. The vertical memory device of claim 29, wherein the memory device is formed symmetrically with respect to the bit lines.
32. The vertical memory device of claim 29, wherein the memory device is formed symmetrically with respect to the common source region.
33. The vertical memory device of claim 24, wherein a height of the conductive layer is less than or equal to a height of the channel regions.
34. The vertical memory device of claim 24, wherein the data storage material includes a variable resistive material.
35. A vertical memory device, comprising:
a common source region;
source regions formed on the common source region and extending in a first direction;
trenches formed between the source regions to a predetermined depth;
a channel region formed on each of the source regions and extending in the first direction;
a conductive layer formed on each of tine source regions in a space between the channel regions;
a drain region formed on the conductive layer; and
a data storage material formed on each of the drain regions.
36. The vertical memory device of claim 35, wherein the common source region extends in the first direction and a second direction perpendicular to the first direction.
37. The vertical memory device of claim 35, wherein the common source region extends in a second direction perpendicular to the first direction.
38. The vertical memory device of claim 35, further comprising:
a heating material interposed between each of the drain regions and each of the data storage materials.
39. The vertical memory device of claim 38, further comprising:
a contact plug interposed between each of the drain regions and each of the heating materials.
40. The vertical memory device of claim 35, further comprising:
a bit line, arranged in a second direction perpendicular to the first direction, on the data storage materials.
41. The vertical memory device of claim 40, wherein the vertical memory device is formed on the bit line at least two times.
42. The vertical memory device of claim 40, wherein the vertical memory device is formed symmetrically with respect to the bit lines.
43. The vertical memory device of claim 40, wherein the vertical memory device is formed symmetrically with respect to the common source region.
44. The vertical memory device of claim 35, wherein a height of the conductive layer is less than or equal to a height of the channel regions.
45. The vertical memory device of claim 35, wherein the data storage material includes a variable resistive material.
46. A method of fabricating a vertical memory device, the method comprising:
sequentially forming, in a first direction, a first junction region, a channel region, and a hard mask line-patterned;
line-patterning the channel region and a portion of first junction region to form a line-patterned structure;
forming a first insulating layer on an outer sidewall of the line-patterned structure and;
removing the hard mask;
forming an insulating layer spacer on an inner sidewall of the first insulating layer on the channel region;
etching the exposed channel region and a portion of the first junction region to form a self-aligned trench;
sequentially forming a gate insulating layer and a conductive layer in the self-aligned trench;
recessing the conductive layer so that the conductive layer overlaps the channel region; and
forming a second junction region and a data storage material on the conductive layer.
47. The method of claim 46, wherein the first junction region is includes a common junction region and a switching junction region extending in the first direction.
48. The method of claim 47, wherein the common junction region extends in the first direction and the second direction.
49. The method of claim 47, wherein the common junction region is formed in the second direction.
50. The method of claim 46, wherein the forming a second junction region further comprises:
removing the insulating layer spacer; and
forming the second junction region on the exposed channel region and conductive layer.
51. The method of claim 50, further comprising:
forming a heating material and a sacrificial layer on the second junction region;
patterning the sacrificial layer, the heating material, the second junction region, and a portion of the conductive layer to a second direction perpendicular to the first direction;
removing the sacrificial layer to expose the heating material; and
forming the data storage material on the exposed heating material.
52. The method of claim 51, wherein the data storage material is armed using a variable resistive material.
53. The method of claim 50, wherein the forming a second junction further comprises:
removing the insulating layer spacer; and
forming the second junction region on the semiconductor substrate in a space formed by the removal of the insulating layer spacer;
the method further comprising:
patterning the second junction region and a portion of the conductive material in a second direction perpendicular to the first direction; and
forming the heating material and the data storage material on the second junction region.
54. The method of claim 53, wherein the data storage material is formed using a variable resistive material.
55. The method of claim 46, wherein the recessing the conductive layer to overlap the channel region further comprises:
recessing the conductive layer so that a height of the conductive layer is less than or equal to a height of the channel region.
56. The method of claim 50, further comprising:
forming a heating material and a sacrificial layer on the second junction region;
patterning the sacrificial layer, the heating material, the second junction region, the conductive layer, the gate insulating layer, and a portion of the first junction region in a second direction perpendicular to the first direction; and
forming the data storage material on the heating material exposed by the removal of the sacrificial layer.
57. The method of claim 56, wherein the data storage material is formed using a variable resistive material.
58. The method of claim 50, wherein the forming the second junction region further comprises:
removing the spacer insulating layer; and
forming the second junction region on the semiconductor substrate in a space from which the insulating layer spacer is removed,
the method further comprising:
patterning the second junction region, the conductive layer, the gate insulating layer, and a portion of the first junction region in a second direction perpendicular to the first direction; and
forming the heating material and the data storage material on the second junction region.
59. The method of claim 58, wherein the data storage material is formed using a variable resistive material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compressor, comprising:
a hermetic container intofrom which the refrigerant is sucked and discharged;
a stator fixed to an inner surface of the hermetic container;
a first stationary member including a stationary shaft having a top end immovably installed in the hermetic container and being elongated into the hermetic container;
a second stationary member spaced apart from a bottom end of the first stationary member and immovably installed at a low portion of the hermetic container; and
a rotary member located inside the stator, rotated around the first stationary member by a mutual electromagnetic force between the rotor and the stator, compressing the refrigerant sucked into a compression space defined therein, and rotatably supported by applying a load to the second stationary member.
2. The compressor of claim 1, wherein the first stationary member further comprises an eccentric portion eccentric from the center of the stationary shaft, and the rotary member further comprises a rotor rotated by the mutual electromagnetic force between the rotor and the stator, a cylinder stacked below the rotor, rotated with the rotor, and having a compression space therein, a vane elastically supported on the cylinder to partition the compression space between the eccentric portion and the cylinder into a suction pocket into which the refrigerant is sucked and a compression pocket infrom which the refrigerant is compressed and discharged, and upper and lower bearing covers forming upper and lower portions of the compression space and rotating around the first stationary member with the rotary member.
3. The compressor of claim 2, wherein the upper bearing cover comprises a cylinder coupling portion, the cylinder being fastened to a bottom surface of a central portion thereof, and a rotor coupling portion, the rotor being fastened to a top surface of the circumference of the cylinder coupling portion, and the upper bearing cover has a stepped portion such that the cylinder coupling portion is more protruded than the rotor coupling portion in the upward direction to fit the rotor thereonto.
4. The compressor of claim 2, wherein a slot-shaped vane mounting hole is provided in an inner circumferential surface of the cylinder to be elongated in the radial direction and the up-down direction, and the vane is inserted into the vane mounting hole and supported by a vane spring.
5. The compressor of claim 4, wherein a vane escape protrusion portion is provided on the cylinder to protrude from an outer circumferential surface of the cylinder, and the vane escape protrusion portion comprises an opening communicating with the vane mounting hole and supplying the oil filled in the hermetic container.
6. The compressor of claim 1, wherein the first stationary member further comprises an eccentric portion eccentric from the center of the stationary shaft, and the rotary member further comprises a cylinder-type rotor rotated around the stationary shaft by a rotating electromagnetic field from the stator, a roller applied with a rotation force of the cylinder-type rotor, rotated around the eccentric portion with the cylinder-type rotor, and defining a compression space between the roller and the cylinder-type rotor, a vane protruding from an outer circumferential surface of the roller, fitted into an inner circumferential surface of the cylinder-type rotor, transferring the rotation force from the cylinder-type rotor to the roller, and partitioning the compression space into a suction pocket into which the refrigerant is sucked and a compression pocket infrom which the refrigerant is compressed and discharged, and upper and lower bearing covers forming upper and lower portions of the compression space and rotating around the first stationary member with the rotary member.
7. The compressor of claim 6, wherein the cylinder-type rotor comprises a cylinder defining a compression space between the cylinder and the roller, and a rotor formed by staking iron pieces in the axial direction such that permanent magnets are inserted into a plurality of holes formed in the stacked body to face the stator, the cylinder and the rotor being shape-matched with each other.
8. The compressor of claim 6, wherein a vane mounting hole accommodating the vane is provided in the cylinder-type rotor, a bush guiding both side surfaces of the vane linearly reciprocated with the rotation of the cylinder-type rotor is provided in the vane mounting hole, and at least a part of the vane mounting hole is not covered with the lower bearing cover such that the oil stored in the hermetic container is supplied thereto.
9. The compressor of claim 2, wherein the upper bearing cover comprises an upper shaft portion enclosing the stationary shaft and an upper cover portion coupled to the cylinder to form the upper portion of the compression space, an inner circumferential surface of the upper shaft portion is rotatably journal-supported on an outer circumferential surface of the stationary shaft, and a bottom surface of the upper cover portion is rotatably thrust-supported on a top surface of the eccentric portion.
10. The compressor of claim 2, wherein the lower bearing cover comprises a lower shaft portion enclosing the stationary shaft and a lower cover portion coupled to the cylinder to form the lower portion of the compression space, an inner circumferential surface of the lower shaft portion is rotatably journal-supported on an outer circumferential surface of the stationary shaft, and a top surface of the lower cover portion is rotatably thrust-supported on a bottom surface of the eccentric portion.
11. The compressor of claim 10, wherein the lower shaft portion is more extended than the bottom end of the stationary shaft, and an end portion thereof is rotatably supported by applying a load of the rotary member to the second stationary member.
12. The compressor of claim 11, wherein the second stationary member further comprises a cylindrical bearing portion having a stepped portion therein, a bottom end portion of the lower shaft portion is thrust-supported on the stepped portion of the second stationary member, and an outer circumferential surface of the lower shaft portion is journal-supported on an inner circumferential surface of the cylindrical bearing portion.
13. The compressor of claim 12, wherein a separate thrust bearing member is provided between the bottom end portion of the lower shaft portion and the stepped portion of the second stationary member.
14. The compressor of claim 10, further comprising an upper shaft holder provided on a top surface of the hermetic container such that a top end of the stationary shaft is fixed thereto.
15. The compressor of claim 10, wherein the hermetic container is formed in the shape of a cylinder with a circular cross-section, and the second stationary member is fixed to one or more of the side and bottom surfaces of the hermetic container by welding.
16. The compressor of claim 6, wherein the upper bearing cover comprises an upper shaft portion enclosing the stationary shaft and an upper cover portion coupled to the cylinder to form the upper portion of the compression space, an inner circumferential surface of the upper shaft portion is rotatably journal-supported on an outer circumferential surface of the stationary shaft, and a bottom surface of the upper cover portion is rotatably thrust-supported on a top surface of the eccentric portion.
17. The compressor of claim 6, wherein the lower bearing cover comprises a lower shaft portion enclosing the stationary shaft and a lower cover portion coupled to the cylinder to faun the lower portion of the compression space, an inner circumferential surface of the lower shaft portion is rotatably journal-supported on an outer circumferential surface of the stationary shaft, and a top surface of the lower cover portion is rotatably thrust-supported on a bottom surface of the eccentric portion.
18. The compressor of claim 17, wherein the lower shaft portion is more extended than the bottom end of the stationary shaft, and an end portion thereof is rotatably supported by applying a load of the rotary member to the second stationary member.
19. The compressor of claim 18, wherein the second stationary member further comprises a cylindrical bearing portion having a stepped portion therein, a bottom end portion of the lower shaft portion is thrust-supported on the stepped portion of the second stationary member, and an outer circumferential surface of the lower shaft portion is journal-supported on an inner circumferential surface of the cylindrical bearing portion.
20. The compressor of claim 19, wherein a separate thrust bearing member is provided between the bottom end portion of the lower shaft portion and the stepped portion of the second stationary member.
21. The compressor of claim 19, further comprising an upper shaft holder provided on a top surface of the hermetic container such that a top end of the stationary shaft is fixed thereto.
22. The compressor of claim 17, wherein the hermetic container is foiined in the shape of a cylinder with a circular cross-section, and the second stationary member is fixed to one or more of the side and bottom.