1. A method of registering a visible-light image and an infrared image in a thermal imaging camera, comprising:
receiving visible-light image data corresponding to a first view of a scene and infrared image data corresponding to a second view of the scene, the first view and the second view, and the corresponding visible-light image data and infrared image data, having a parallax error;
detecting a first feature set in the visible-light image data;
detecting a second feature set in the infrared image data;
generating a plurality of overlapping alignments of the infrared image data and the visible-light image data;
calculating a similarity figure for each overlapping alignment, the similarity figure being a function of the relative alignment of the first feature set and the second feature set;
selecting one of the overlapping alignments having a desired similarity figure;
aligning the visible-light image data and the infrared image data according to the selected overlapping alignment; and
displaying at least a portion of the visible-light image data andor at least a portion of the infrared image data.
2. The method of claim 1, wherein the visible-light image data comprises color data and further comprising converting the visible-light image data to visible-light intensity data.
3. The method of claim 1, wherein the infrared image data comprises color data and further comprising converting the infrared image data to infrared intensity data.
4. The method of claim 1, wherein the first and second feature sets comprise edges in the visible-light image data and the infrared image data, respectively.
5. The method of claim 4, further comprising enhancing the edges in the first and second feature sets.
6. The method of claim 1, further comprising thresholding the first feature set and the second feature set and generating binary representations of the visible-light image data and the infrared image data.
7. The method of claim 1, wherein the desired similarity figure represents the greatest degree of similarity between the first feature set and the second feature set among the overlapping alignments.
8. The method of claim 7, further comprising comparing the desired similarity figure to a similarity threshold and setting the selected overlapping alignment to a default alignment if the desired similarity is less than the similarity threshold.
9. The method of claim 8, wherein the default alignment is a manual alignment.
10. The method of claim 1, further comprising employing a subset of at least one of the visible-light image data and the infrared image data in generating the plurality of overlapping alignments.
11. The method of claim 10, wherein the subset is determined from a physical configuration of the thermal imaging camera.
12. A thermal imaging camera, comprising:
a visible-light camera module having a visible-light sensor for generating visible-light image data corresponding to a first view of a scene;
an infrared camera module having an infrared sensor for generating infrared image data corresponding to a second view of the scene, the infrared sensor offset from the visible-light sensor such that the first view and the second view, and the corresponding visible-light image data and infrared image data, have a parallax error;
a display for displaying at least a portion of the visible-light image data andor at least a portion of the infrared image data; and
a programmable processor coupled with the display and the infrared and visible-light camera modules, the processor programmed with instructions for registering the visible-light image data and the infrared image data, the registering comprising
detecting a first feature set in the visible-light image data,
detecting a second feature set in the infrared image data,
generating a plurality of overlapping alignments of the infrared image data and the visible light image data,
calculating a similarity figure for each overlapping alignment, the similarity figure being a function of the relative alignment of the first feature set and the second feature set,
selecting one of the overlapping alignments having a desired similarity figure, and
aligning the visible-light image data and the infrared image data according to the selected overlapping alignment.
13. The thermal imaging camera of claim 12, the registering further comprising employing a subset of at least one of the visible-light image data and the infrared image data in generating the plurality of overlapping alignments, wherein the subset is determined from a position of the first view relative to the second view.
14. The thermal imaging camera of claim 13, wherein the visible-light camera module and the infrared camera module are configured such that the first view is substantially horizontally aligned with the second view.
15. The thermal imaging camera of claim 12, the registering further comprising thresholding the first feature set and the second feature set and generating binary representations of the visible-light image data and the infrared image data.
16. The thermal imaging camera of claim 12, wherein the first and second feature sets comprise edges in the visible-light image data and the infrared image data, respectively.
17. A thermal imaging camera, comprising:
a visible-light camera module for generating visible-light image data corresponding to a first view of a scene;
an infrared camera module for generating infrared image data corresponding to a second view of the scene, the infrared camera module offset from the visible-light camera module such that the first view and the second view, and the corresponding visible-light image data and infrared image data, have a parallax error;
a display for displaying at least a portion of the visible-light image data andor at least a portion of the infrared image data;
a manual adjustment mechanism for reducing the parallax error; and
a programmable processor coupled with the display and the infrared and visible-light camera modules, the processor programmed with instructions for registering the visible-light image data and the infrared image data, the registering comprising
detecting a first feature set in the visible-light image data,
detecting a second feature set in the infrared image data,
generating a plurality of overlapping alignments of the infrared image data and the visible light image data,
calculating a similarity figure for each overlapping alignment, the similarity figure being a function of the relative alignment of the first feature set and the second feature set,
selecting one of the plurality of overlapping alignments having a desired similarity figure, and
aligning the visible-light image data and the infrared image data according to the selected overlapping alignment.
18. The thermal imaging camera of claim 17, wherein the registering further comprises employing a subset of at least one of the visible-light image data and the infrared image data in generating the plurality of overlapping alignments, the subset corresponding to a setting of the manual adjustment mechanism.
19. The thermal imaging camera of claim 18, wherein the manual adjustment mechanism comprises focusable optics for adjusting the first view of the scene or the second view of the scene.
20. The thermal imaging camera of claim 17, further comprising comparing the desired similarity figure to a similarity threshold and setting the selected overlapping alignment to a manual alignment determined by the manual adjustment mechanism if the desired similarity is less than the similarity threshold.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A phase change memory cell, comprising:
a first electrode;
a second electrode;
a plurality of pillars located between the first electrode and the second electrode, each of the plurality of pillars having a first end electrically coupled to the first electrode and a second end electrically coupled to the second electrode, wherein each of the plurality of pillars includes a heater material portion and a phase change material portion.
2. The memory cell of claim 1, wherein for each of the plurality of pillars, the phase change material portion is over the heater material portion.
3. The memory cell of claim 1, wherein the phase change material portion includes at least one of a group consisting of germanium, antimony, and tellurium.
4. The memory cell of claim 1, further comprising a base of heater material between the plurality of pillars and the first electrode.
5. The memory cell of claim 1, wherein each of the plurality of pillars have a width of less than 20 nanometers.
6. The memory cell of claim 1, wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
7. The memory cell of claim 1, further comprising an insulating material surrounding the plurality of pillars.
8. The memory cell of claim 1, wherein:
the phase change material comprises a combination including a first material and a second material;
the first material is one of a class group consisting of a group IB material, a group III material, a group IV material, a group V material, and a group VI material;
the second material is one of the class group but not a same group of the class group as the first material.
9-10. (canceled)
11-19. (canceled)
20. A phase change memory cell, comprising:
a first electrode;
a second electrode;
a plurality of pillars between the first electrode and the second electrode, each of the plurality of pillars including a first end electrically coupled to the first electrode and a second end electrically coupled to the second electrode, wherein each of the plurality of pillars comprises a heater material portion and a phase change material portion and each of the plurality of pillars has a width of less than 20 nanometers;
an insulating material around each of the plurality of pillars.
21. The memory cell of claim 2, wherein the phase change material portion includes at least one of a group consisting of germanium, antimony, and tellurium.
22. The memory cell of claim 2, further comprising a base of heater material between the plurality of pillars and the first electrode.
23. The memory cell of claim 2, wherein each of the plurality of pillars have a width of less than 20 nanometers.
24. The memory cell of claim 2, wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
25. The memory cell of claim 5, wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
26. The memory cell of claim 2, wherein:
the phase change material comprises a combination including a first material and a second material;
the first material is one of a class group consisting of a group IB material, a group III material, a group IV material, a group V material, and a group VI material;
the second material is one of the class group but not a same group of the class group as the first material.
27. The memory cell of claim 1, further comprising an insulating material surrounding the plurality of pillars.
28. The memory cell of claim 4, wherein each of the plurality of pillars have a width of less than 20 nanometers.
29. The memory cell of claim 4, wherein each of the plurality of pillars have a spacing of less than 20 nanometers.
30. The memory cell of claim 3, wherein each of the plurality of pillars have a width of less than 20 nanometers.
31. The memory cell of claim 3, wherein each of the plurality of pillars have a spacing of less than 20 nanometers.