1. A portable information terminal comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
2. A semiconductor device according to claim 1, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
3. A portable information terminal according to claim 1, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
4. A portable information terminal according to claim 1, wherein the portable information terminal is one of a mobile computer, a cellular telephone, a portable game machine, or an electronic book.
5. A portable information terminal comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
6. A semiconductor device according to claim 5, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
7. A portable information terminal according to claim 5, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
8. A portable information terminal according to claim 5, wherein the portable information terminal is one of a mobile computer, a cellular telephone, a portable game machine, or an electronic book.
9. A portable information terminal according to claim 5, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
10. A portable information terminal according to claim 5, wherein the oxide is a film comprising an aluminum oxide.
11. A portable information terminal comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
12. A semiconductor device according to claim 11, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
13. A portable information terminal according to claim 11, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
14. A portable information terminal according to claim 11, wherein the portable information terminal is one of a mobile computer, a cellular telephone, a portable game machine, or an electronic book.
15. A portable information terminal comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
16. A semiconductor device according to claim 15, wherein each of said first, second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
17. A portable information terminal according to claim 15, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
18. A portable information terminal according to claim 15, wherein the portable information terminal is one of a mobile computer, a cellular telephone, a portable game machine, or an electronic book.
19. A portable information terminal according to claim 15, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
20. A portable information terminal according to claim 15, wherein the oxide is a film comprising an aluminum oxide.
21. A computer comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
22. A computer according to claim 21, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
23. A computer according to claim 21, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
24. A computer comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
25. A computer according to claim 24, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
26. A computer according to claim 24, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
27. A computer according to claim 24, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
28. A computer according to claim 24, wherein the oxide is a film comprising an aluminum oxide.
29. A computer comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
30. A computer according to claim 29, wherein each of said first second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
31. A computer according to claim 29, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
32. A computer comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
33. A computer according to claim 32, wherein each of said first,
second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
34. A computer according to claim 32, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
35. A computer according to claim 32, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
36. A computer according to claim 32, wherein the oxide is a film comprising an aluminum oxide.
37. A camera comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first-gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
38. A camera according to claim 37, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
39. A camera according to claim 37, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
40. A camera comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the second semiconductor layer comprises a second LDD region not overlapped with the second gate electrode with the gate insulating film interposed therebetween.
41. A camera according to claim 40, wherein each of the first and second LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of the impurity element in the first LDD region is higher than in the second LDD region.
42. A camera according to claim 40, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
43. A camera according to claim 40, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
44. A camera according to claim 40, wherein the oxide is a film comprising an aluminum oxide.
45. A camera comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
46. A camera according to claim 45, wherein each of said first second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
47. A camera according to claim 45, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
48. A camera comprising:
a display device, the display device comprising a driving circuit and a pixel portion formed over a substrate,
the driving circuit comprising:
a first thin film transistor comprising a first semiconductor layer and a first gate electrode adjacent to the first semiconductor layer with a gate insulating film interposed therebetween; and
a second thin film transistor comprising a second semiconductor layer and a second gate electrode adjacent to the second semiconductor layer with the gate insulating film interposed therebetween,
wherein the first semiconductor layer comprises a first LDD region wholly overlapped with the first gate electrode with the gate insulating film interposed therebetween, and
wherein the second semiconductor layer comprises a second LDD region partly overlapped with the second gate electrode with the gate insulating film interposed therebetween,
the pixel portion comprising:
a third thin film transistor comprising a third semiconductor layer and a third gate electrode adjacent to the third semiconductor layer with the gate insulating film interposed therebetween; and
a capacitor comprising a shading film disposed on a resin film, an oxide of the shading film, and a pixel electrode disposed on the oxide,
wherein the third semiconductor layer comprises a third LDD region not overlapped with the third gate electrode with the gate insulating film interposed therebetween.
49. A camera according to claim 48, wherein each of said first second and third LDD regions contains an impurity element belonging to the Group 15 of the Periodic Table, and a concentration of said impurity element in each of said first and second LDD regions is higher than in said third LDD region.
50. A camera according to claim 48, wherein at least one of the first and second gate electrodes has a first layer comprising tantalum nitride and a second layer comprising tungsten on the first layer.
51. A camera according to claim 48, wherein the shading film comprises an aluminum film or a film consisting of aluminum as the principal component.
52. A camera according to claim 48, wherein the oxide is a film comprising an aluminum oxide.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for producing a semiconductor encapsulating resin composition, comprising:
pulverizing a composition containing a powder material of a curable resin and a powder material of an inorganic filler material by swirling the composition in a chamber with a swirl stream of a gas using a gas stream type pulverizing apparatus,
wherein a pressure of the gas supplied into the chamber is equal to or more than 0.3 MPa,
a temperature of the gas supplied into the chamber is equal to or less than 20\xb0 C., and
a humidity of the gas supplied into the chamber is equal to or less than 40% RH.
2. The method as claimed in claim 1, wherein the composition includes a curing accelerator and the curable resin includes an epoxy resin and a phenolic resin-based curing agent.
3. The method as claimed in claim 1, wherein a content percentage of the inorganic filler material in the composition to be pulverized in the pulverizing process is in the range of 50 to 80 wt %.
4. The method as claimed in claim 1, wherein further comprising pre-mixing the composition prior to the pulverizing process.
5. The method as claimed in claim 1, wherein the swirl stream of the gas is generated by supplying the gas into the chamber and a flow rate of the gas supplied into the chamber is equal to or more than 1 Nm3min.
6. The method as claimed in claim 1, wherein an average value of an inner diameter of the chamber is in the range of 10 to 50 cm.
7. The method as claimed in claim 1, wherein particles of the composition thus pulverized in the pulverizing process have a particle size distribution which includes a first group having a particle size of 250 \u03bcm or more, a second group having a particle size of 150 \u03bcm or more but less than 250 \u03bcm, and a third group having a particle size of less than 150 \u03bcm, and
wherein amounts of the first, second and third groups with respect to the amount of the whole of the pulverized composition are 1 wt % or less, 9 wt % or less and 90 wt % or more, respectively.
8. A gas stream type pulverizing apparatus for pulverizing a composition containing a powder material of a curable resin and a powder material of an inorganic filler material by swirling the composition with a swirl stream of a gas, the pulverizing apparatus comprising:
a chamber;
a supply device for supplying the composition into the chamber;
a swirl stream generating device for generating the swirl stream of the gas within the chamber;
a pressure adjusting device for adjusting a pressure of the gas supplied into the chamber;
a temperature adjusting device for adjusting a temperature of the gas supplied into the chamber; and
a humidity adjusting device for adjusting a humidity of the gas supplied into the chamber,
wherein the pressure of the gas supplied into the chamber is set equal to or more than 0.3 MPa,
the temperature of the gas supplied into the chamber is set equal to or less than 20\xb0 C.,
the humidity of the gas supplied into the chamber is set equal to or less than 40% RH, and
wherein the pulverizing apparatus is configured to pulverize the composition by generating the swirl stream of the gas within the chamber and swirling the composition with the swirl stream of the gas.
9. The pulverizing apparatus as claimed in claim 8, wherein the swirl stream generating device includes a plurality of nozzles which inject the gas into the chamber and are arranged along a circumferential direction of the chamber.
10. The pulverizing apparatus as claimed in claim 8, wherein the pressure adjusting device is a device for compressing the gas before the gas is supplied into the chamber.
11. The pulverizing apparatus as claimed in claim 8, wherein the temperature adjusting device is a device for cooling the gas before the gas is supplied into the chamber.
12. The pulverizing apparatus as claimed in claim 8, wherein the humidity adjusting device is a device for drying the gas before the gas is supplied into the chamber.
13. The pulverizing apparatus as claimed in claim 8, wherein the chamber includes a bottom portion, an outlet formed in the bottom portion for discharging the pulverized composition therethrough, and a wall portion formed in the bottom portion so as to surround the outlet, and
wherein the chamber is configured to allow the pulverized composition to go over the wall portion and then discharge the pulverized composition from the outlet.
14. The pulverizing apparatus as claimed in claim 8, wherein the supply device has a supply port for supplying the composition into the chamber.
15. The pulverizing apparatus as claimed in claim 14, wherein the supply port is provided out of alignment with a center of the swirl stream of the gas.