1. A clutch assembly comprising:
a clutch device;
at least one fastener; and
a flywheel joined to the clutch device by the at least one fastener in a longitudinal axis of the at least one fastener,
wherein the longitudinal axis of the at least one fastener is substantially lateral to an axis of rotation of the flywheel.
2. A clutch assembly according to claim 1,
wherein the longitudinal axis is in a rotation plane of the flywheel,
wherein the rotation plane is substantially perpendicular to the axis of rotation of the flywheel.
3. A clutch assembly according to claim 2, wherein the longitudinal axis is substantially perpendicular to a direction of a centrifugal force of the at least one fastener when the clutch assembly rotates around the axis of the rotation.
4. A clutch assembly according to claim 1, wherein the at least one fastener comprises a screw.
5. A clutch assembly according to claim 1, wherein the at least one fastener comprises a rivet.
6. A clutch assembly according to claim 1, wherein the fastener is near a circumference of the flywheel.
7. A clutch assembly according to claim 1 further comprising a dual clutch.
8. A clutch assembly according to claim 1 further comprising a single clutch.
9. A clutch assembly according to claim 1, further comprising:
a pressure plate fastened to the clutch device by a fastener,
wherein the fastener fastens the pressure plate to the clutch device in a longitudinal axis of the fastener,
wherein the longitudinal axis of the at least one fastener being lateral to the axis of rotation.
10. A clutch assembly claim 1, further comprising a casing closely fitted to the clutch assembly.
11. A clutch assembly according to claim 10, wherein the casing comprises an opening for laterally accessing the fastener from an exterior of the clutch assembly.
12. A power train comprising the clutch assembly according to one of the aforementioned claims.
13. (canceled)
14. A method of assembling a power train comprising:
providing an engine with a flywheel;
connecting a clutch device to the flywheel;
mounting a gearbox onto the clutch device; and
fastening the flywheel onto the mounted clutch device.
15. A method of disassembling a power train comprising:
loosening a flywheel from a clutch device;
dismounting a gearbox from the loosened clutch device; and
dismounting the loosened clutch device from the flywheel.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An evaluating method for a lithography process including an application step of applying a photosensitive material, an exposure step, and a development step in order to form a predetermined development pattern on a substrate applied with the photosensitive material, the evaluating method comprising:
exposing the substrate applied with the photosensitive material with a light beam via an evaluating pattern;
developing the exposed substrate to form a development pattern;
observing the formed development pattern; and
determining, from a result of the observation, at least one factor of an application factor inherent in the application step, an exposure factor inherent in the exposure step and a development factor inherent in the development step, which affect the development pattern respectively, independently from the other factors.
2. The evaluating method according to claim 1, wherein an area for illuminating the evaluating pattern is restricted when the substrate is exposed with the light beam via the evaluating pattern in order to determine the application factor and the development factor independently from the exposure factor respectively.
3. The evaluating method according to claim 2, wherein the evaluating pattern includes patterns for determining the application factor, the development factor and the exposure factor respectively, and a development pattern, which is used to determine the one factor, is observed in order to determine the one factor independently from the other factors.
4. The evaluating method according to claim 1, wherein the application factor, the development factor, and the exposure factor are determined independently respectively.
5. The evaluating method according to claim 1, wherein the development factor is determined after the application factor is determined from the development pattern.
6. The evaluating method according to claim 1, wherein the application factor is uneven application, and the development factor is uneven development.
7. A method for evaluating a lithography system including an applying apparatus which applies a photosensitive material to a substrate, an exposure apparatus which exposes the substrate applied with the photosensitive material, and a developing apparatus which develops the photosensitive material, the method comprising:
a first step of applying the photosensitive material onto the substrate by using the applying apparatus;
a second step of exposing the substrate applied with the photosensitive material with a light beam via an evaluating pattern by the aid of the exposure apparatus;
a third step of developing the photosensitive material on the substrate by using the developing apparatus;
a fourth step of measuring a development pattern of the photosensitive material on the substrate having been subjected to the development; and
a fifth step of evaluating one characteristic of a characteristic of the applying apparatus, a characteristic of the exposure apparatus, and a characteristic of the development apparatus which affect the development pattern respectively, independently from the other characteristics, on the basis of a result of the measurement in the fourth step.
8. The method for evaluating the lithography system according to claim 7, wherein:
the exposure apparatus comprises a projection system which projects an image of a mask pattern onto the substrate;
an image of the evaluating pattern is projected onto a plurality of comparted areas on the substrate through a predetermined narrow area in an effective field of the projection system in the second step; and
the characteristic of the applying apparatus or the characteristic of the developing apparatus is evaluated in the fifth step.
9. The method for evaluating the lithography system according to claim 8, wherein:
a physical quantity, which corresponds to a dispersion of a thickness of the development pattern of the photosensitive material formed in the plurality of comparted areas on the substrate, is measured in the fourth step; and
uneven application of the photosensitive material, which is caused by the applying apparatus, is evaluated in the fifth step.
10. The method for evaluating the lithography system according to claim 9, wherein:
the evaluating pattern includes a plurality of wedge-shaped patterns arranged in a direction intersecting a measuring direction;
a dispersion of a length in the measuring direction of the development pattern of the photosensitive material formed in the plurality of comparted areas on the substrate is measured in the fourth step; and
uneven development of the developing apparatus is evaluated in the fifth step.
11. The method for evaluating the lithography system according to claim 7, wherein:
the exposure apparatus comprises a projection system which projects an image of a mask pattern onto the substrate;
an image of the evaluating pattern is projected onto a plurality of comparted areas on the substrate through a predetermined wide area in an effective field of the projection system in the second step; and
the characteristic of the projection system of the exposure apparatus is evaluated in the fifth step.
12. The method for evaluating the lithography system according to claim 8, wherein:
the exposure apparatus is a scanning exposure type exposure apparatus which exposes the substrate by synchronously moving a mask and the substrate;
the image of the evaluating pattern is projected onto the plurality of comparted areas on the substrate in accordance with a scanning exposure manner in the second step; and
a dynamic control characteristic of the exposure apparatus is evaluated in the fifth step.
13. The method for evaluating the lithography system according to claim 9, wherein the physical quantity is measured by using a first sensor provided for the exposure apparatus.
14. The method for evaluating the lithography system according to claim 10, wherein the dispersion of the length in the measuring direction of the development pattern is measured by using a second sensor provided for the exposure apparatus.
15. The method for evaluating the lithography system according to claim 9, further comprising:
a sixth step of measuring the dispersion of the length in the measuring direction of the development pattern of the photosensitive material formed in the plurality of comparted areas on the substrate; and
a seventh step of evaluating uneven development of the developing apparatus.
16. The method for evaluating the lithography system according to claim 15, further comprising:
an eighth step of applying the photosensitive material onto another substrate by using the applying apparatus;
a ninth step of exposing the photosensitive material on the substrate applied with the photosensitive material by projecting an image of a pattern different from the evaluating pattern onto the plurality of comparted areas on the substrate through a predetermined wide area in the effective field of the projection system;
a tenth step of developing the photosensitive material exposed in the ninth step; and
an eleventh step of evaluating any characteristic of the projection system of the exposure apparatus by measuring a development pattern of the photosensitive material developed in the tenth step.
17. The method for evaluating the lithography system according to claim 16, further comprising adjusting the projection system in accordance with the evaluated characteristic of the projection system.
18. The method for evaluating the lithography system according to claim 17, wherein:
the exposure apparatus is a scanning exposure type exposure apparatus for exposing the substrate by synchronously moving a mask and the substrate, and the method further comprises:
a twelfth step of applying the photosensitive material to a test substrate by using the applying apparatus;
a thirteenth step of projecting an image of an evaluating mask onto the plurality of comparted areas on the substrate in accordance with a scanning exposure manner to expose the photosensitive material;
a fourteenth step of developing the photosensitive material exposed in the thirteenth step; and
a fifteenth step of observing and evaluating a dynamic control characteristic of the exposure apparatus.
19. An evaluating method for a lithography system including an exposure apparatus which exposes a substrate applied with a photosensitive material, and a substrate-processing apparatus which processes the substrate during at least one process to be performed before or after the exposure of the photosensitive material, the evaluating method comprising:
transferring an evaluating pattern onto the photosensitive material by using the lithography system to form a transferred image;
measuring a state of the transferred image; and
independently evaluating a characteristic of the exposure apparatus and a characteristic of the substrate-processing apparatus on the basis of a result of the measurement.
20. The evaluating method according to claim 19, wherein a size of an area of illumination of the evaluating pattern is adjusted depending on the characteristic to be determined when the substrate is exposed with the evaluating pattern in order to independently determine the characteristic of the exposure apparatus and the characteristic of the substrate-processing apparatus.
21. The evaluating method according to claim 20, wherein the evaluating pattern includes patterns which determine the characteristic of the exposure apparatus and the characteristic of the substrate-processing apparatus respectively, and a development pattern of the pattern corresponding to the characteristic to be independently determined is observed.
22. The evaluating method according to claim 19, wherein the transferred image is a latent image formed by exposing the photosensitive material with a light beam.
23. The evaluating method according to claim 19, wherein the substrate-processing apparatus includes an applying apparatus which applies the photosensitive material onto the substrate, and a developing apparatus which develops the photosensitive material formed with the transferred image.
24. The evaluating method according to claim 19, wherein the characteristic of the exposure apparatus is an image formation characteristic of a projection system provided for the exposure apparatus, and the characteristic of the substrate-processing apparatus is uneven application of the photosensitive material.
25. An adjusting method for a substrate-processing apparatus which constitutes a lithography system together with an exposure apparatus which exposes a substrate applied with a photosensitive material and which treats the substrate during at least one process to be performed before or after the exposure of the photosensitive material, the adjusting method comprising:
transferring an evaluating pattern onto the photosensitive material on the substrate by using the lithography system to form a transferred image;
measuring a state of the transferred image; and
detecting a characteristic of the substrate-processing apparatus independently from a characteristic of the exposure apparatus on the basis of a result of the measurement.
26. The adjusting method according to claim 25, further comprising adjusting the substrate-processing apparatus when the detected characteristic does not satisfy a predetermined value.
27. The adjusting method according to claim 25, wherein the transferred image is a latent image formed by exposing the photosensitive material with a light beam.
28. The adjusting method according to claim 25, wherein the substrate-processing apparatus includes an applying apparatus which applies the photosensitive material onto the substrate, and a developing apparatus which develops the photosensitive material formed with the transferred image.
29. The adjusting method according to claim 25, wherein the characteristic of the exposure apparatus is an image formation characteristic of a projection system provided for the exposure apparatus, and the characteristic of the substrate-processing apparatus is uneven application of the photosensitive material.
30. The evaluating method according to claim 25, wherein the evaluating pattern includes a pattern which determines the characteristic of the substrate-processing apparatus independently from the characteristic of the exposure apparatus.
31. A lithography system which forms a predetermined development pattern on a substrate applied with a photosensitive material, the lithography system comprising:
an applying apparatus which applies the photosensitive material to the substrate;
an exposure apparatus which exposes the substrate applied with the photosensitive material;
a developing apparatus which develops the exposed photosensitive material;
a control system which controls the exposure apparatus so that the substrate, to which the photosensitive material has been applied by the applying apparatus, is exposed with a light beam via a predetermined evaluating pattern by the aid of the exposure apparatus;
a sensor which measures a state of a development pattern of the photosensitive material obtained by developing the substrate exposed by the exposure apparatus by using the developing apparatus; and
a judging system which judges one characteristic of a characteristic of the applying apparatus, a characteristic of the exposure apparatus, and a characteristic of the developing apparatus which affect the development pattern respectively, independently from the other characteristics, on the basis of measurement information obtained by the sensor.
32. The lithography system according to claim 31, wherein the sensor measures at least one of uneven application of the photosensitive material, uneven development, and an image formation characteristic of the exposure apparatus.
33. The lithography system according to claim 32, wherein the judging system compares the one characteristic with an expected characteristic.
34. The lithography system according to claim 33, wherein the exposure apparatus includes a projection system which projects an image of the evaluating pattern onto the substrate and a field diaphragm which restricts an illumination field for the evaluating pattern illuminated by the projection system, and the control system controls the field diaphragm depending on the characteristic to be judged.
35. The lithography system according to claim 31, wherein the sensor is provided on the exposure apparatus.
36. The lithography system according to claim 31, further comprising a transport system which transports the substrate.
37. The lithography system according to claim 31, wherein the evaluating pattern includes patterns which measures uneven application of the photosensitive material, uneven development, and an image formation characteristic of the exposure apparatus respectively.
38. An exposure apparatus which exposes a substrate applied with a photosensitive material with a light beam via a mask, the exposure apparatus comprising:
an illumination system which illuminates the mask;
a substrate stage which positions the substrate;
a variable field diaphragm which changes a size of an illumination area illuminated by the illumination system;
a first sensor which measures a physical quantity corresponding to a shape of a pattern of the photosensitive material after development of the substrate on the substrate stage;
a second sensor which measures a position of the pattern of the photosensitive material after the development of the substrate on the substrate stage; and
a judging system which evaluates a state of the photosensitive material on the substrate by using results of the detection performed by the first sensor and the second sensor.
39. The exposure apparatus according to claim 38, further comprising a projection system which projects an illumination light beam from the illumination system onto the substrate, wherein the judging system evaluates an image formation characteristic of the projection system by using at least one of the first sensor and the second sensor.
40. The exposure apparatus according to claim 38, wherein the physical quantity is a thickness of the photosensitive material, and the state of the photosensitive material includes uneven application of the photosensitive material and uneven development.
41. The exposure apparatus according to claim 39, further comprising a control system which controls the variable field diaphragm, wherein the control system makes control such that the variable field diaphragm is narrowed when the state of the photosensitive material on the substrate is evaluated as compared with when the image formation characteristic of the projection system is observed.
42. The exposure apparatus according to claim 39, wherein the second sensor is also used to execute alignment for the substrate with respect to the illumination light beam from the projection system.
43. A method for producing a device with a lithography system including an applying apparatus, an exposure apparatus and a developing apparatus, comprising:
a first step of applying a photosensitive material onto a substrate by using the applying apparatus;
a second step of exposing the substrate applied with the photosensitive material with a light beam via an evaluating pattern by using the exposure apparatus;
a third step of developing the photosensitive material on the substrate by using the developing apparatus;
a fourth step of measuring a development pattern of the developed photosensitive material on the substrate;
a fifth step of evaluating one characteristic of a characteristic of the applying apparatus, a characteristic of the exposure apparatus, and a characteristic of the developing apparatus which affect the development pattern respectively, independently from the other characteristics, on the basis of a result of the measurement performed in the fourth step;
a sixth step of adjusting the apparatus having the evaluated characteristic in accordance with the evaluated characteristic; and
a seventh step of executing the first to third steps by using a pattern for forming the device in place of the evaluating pattern after the adjustment performed in the sixth step to obtain the substrate on which a development pattern for forming the device is formed.
44. A measuring method for measuring an application state of a photosensitive material on a substrate to be exposed by using an exposure apparatus provided with an illumination system which illuminates the substrate applied with the photosensitive material and a detector which detects a returning light beam from the illuminated substrate, the measuring method comprising:
exposing the substrate applied with the photosensitive material with a light beam via an evaluating mark; and
detecting a state of an exposed pattern of the evaluating mark subjected to the exposure to determine the application state of the photosensitive material.
45. The measuring method according to claim 44, wherein the evaluating mark is formed on the substrate.
46. The measuring method according to claim 44, further comprising developing the substrate after exposing the substrate with the light beam via the evaluating mark, wherein the application state of the photosensitive material is determined by detecting a state of the exposed pattern of the developed evaluating mark.
47. The measuring method according to claim 44, wherein the state of the exposed pattern is detected by using the detector, and the detector is a detector which is used to execute alignment for an exposure position of the substrate when the substrate is exposed.
48. The measuring method according to claim 44, wherein a light beam from a light source possessed by the exposure apparatus is used when the substrate is exposed with the light beam via the evaluating mark.
49. A measuring method for measuring a development state of a photosensitive material on a substrate to be exposed by using an exposure apparatus provided with an illumination system which illuminates the substrate applied with the photosensitive material and a detector which detects a returning light beam from the illuminated substrate, the measuring method comprising:
exposing the substrate applied with the photosensitive material with a light beam via an evaluating mark;
developing the exposed substrate; and
detecting a development pattern of the evaluating mark subjected to the development to determine the development state of the photosensitive material.
50. The measuring method according to claim 49, wherein a state of the development pattern is detected by using the detector, and the detector is a detector which is used to execute alignment for an exposure position of the substrate when the substrate is exposed.
51. The measuring method according to claim 49, wherein a light beam from a light source provided on the exposure apparatus is used when the substrate is exposed with the light beam via the evaluating mark.
52. An exposure method comprising a step of adjusting an exposure condition for a photosensitive second object with a light beam via a first object having a device pattern in an exposure apparatus on the basis of an application state measured by using the measuring method as defined in claim 44.
53. An exposure method comprising a step of adjusting an exposure condition for a photosensitive second object with a light beam via a first object having a device pattern in an exposure apparatus on the basis of a development state measured by using the measuring method as defined in claim 49.