1. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface, wherein removing the native oxide comprises cleaning he silicon surface using a plasma etch;
forming a first nitrogen-containing layer on the silicon surface;
forming a first WNx layer over the nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer.
2. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface, wherein forming the first nitrogen-containing layer comprises introducing a nitrogen-based gas into a cleaning chamber used to remove the native oxide from the silicon surface;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer.
3. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface, wherein forming the first nitrogen-containing layer on the silicon surface comprises forming a Si\u2014NH2 layer on the silicon surface;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer.
4. The method of claim 3 wherein forming a Si\u2014NH2 layer comprises flowing Ar, H2, and N2 gas into a cleaning chamber for less than one minute.
5. The method of claim 4 wherein forming a Si\u2014NH2 layer comprises flowing Ar, H2, and N2 gas into a cleaning chamber for 5 seconds or less.
6. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a nitrogen-containing layer on the silicon surface; and
forming a WNx layer over the nitrogen-containing layer by atomic layer deposition, the WNx layer forming a barrier layer, wherein x is between 1 and 6; and
depositing a tungsten layer over the WNx layer;
wherein forming the WNx layer comprises:
introducing a first cycle of gases NH3\u2192WF6 into an ALD chamber to form a first WNx monolayer; and
introducing cycles of gases B2H6\u2192WF6\u2192NH3 into the ALD chamber to form successive second layers of WNx over the first WNx monolayer until the second layers of WNx are of a desired thickness.
7. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer,
wherein depositing a tungsten layer directly over the second nitrogen-containing layer comprises flowing WF6 and SiH4 in a CVD chamber.
8. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer; and
etching the tungsten layer to form a patterned tungsten interface between the silicon surface and a metal layer.
9. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface, wherein forming a first nitrogen-containing layer comprises forming a first nitrogen-containing layer from about 1 nm to 3 nm thick;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer.
10. The method of claim 8 wherein forming a first WNx layer comprises forming a first WNx layer from about 30 \u212b to 100 \u212b thick.
11. A method for forming a conductor on a silicon surface comprising:
removing native oxide from the silicon surface;
forming a first nitrogen-containing layer on the silicon surface;
forming a first WNx layer over the first nitrogen-containing layer by atomic layer deposition, the first WNx layer forming a barrier layer, wherein x is between 1 and 6;
forming a second nitrogen-containing layer over the surface of the first WNx layer, forming the second nitrogen-containing layer comprising providing a gas that contains nitrogen, but no gases containing tungsten, to the top surface of the first WNx layer; and
depositing a tungsten layer directly over the second nitrogen-containing layer, the tungsten layer reacting with the second nitrogen-containing layer so as to form a second WNx layer over the first WNx layer for additional protection of the silicon, depositing the tungsten layer over the second nitrogen-containing layer also forming a tungsten layer over the second WNx layer, where the tungsten layer over the second WNx layer does not contain nitrogen and acts as a highly conductive layer, the tungsten layer not containing nitrogen being thicker than the first WNx layer and the second WNx layer.
12. The method of claim 11 wherein forming a second nitrogen-containing layer over the surface of the first WNx layer comprises exposing the surface of the first WNx layer to the gas that contains nitrogen.
13. The method of claim 11 wherein forming a second nitrogen-containing layer over the surface of the first WNx layer comprises forming a second nitrogen-containing layer directly on the surface of the first WNx layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of verifying proper coupling of an implement assembly to a lift arm assembly by an operator who is located in a cab of a work machine, with (i) the work machine including the implement assembly and the lift arm assembly, (ii) the implement assembly including a hinge plate, (iii) the hinge plate having a first coupling aperture extending therethrough, (iv) the lift arm assembly having a lift arm and a cylinder, and (v) the cylinder being secured to the lift arm, comprising the steps of:
actuating the cylinder so as to move a pin from a first pin position to a second pin position, wherein (i) the pin is spaced apart from the first coupling aperture when the pin is located in the first pin position, and (ii) the pin extends through the first coupling aperture when the pin is located in the second pin position; and
viewing the pin when the pin is located in the second pin position by the operator from a position within the cab whereby proper coupling of the implement assembly to the lift arm assembly is verified by the operator without having to exit the cab.
2. The method of claim 1, wherein:
the hinge plate further has a hook portion,
the lift arm has a support bar, and
the hook portion hookingly engages the support bar.
3. The method of claim 2, wherein:
the lift arm further has a support plate,
the support plate has a second coupling aperture defined therethrough, and
the pin further extends through the second coupling aperture when the pin is located in the second pin position.
4. The method of claim 1, wherein the actuating step includes the step of:
advancing a hydraulic fluid into the cylinder so as to move the pin from the first pin position to the second pin position.
5. The method of claim 1, wherein:
the work machine includes a seat positioned within the cab, and
the viewing step occurs while the operator is seated upon the seat.
6. The method of claim 1, wherein:
the viewing step includes the step of viewing an end portion of the pin when the pin is located in the second pin position by the operator from the position within the cab, and
the end portion of the pin is advanced through the first coupling aperture when the pin is moved from the first pin position to the second pin position.
7. A method of verifying proper coupling of an implement assembly to a lift arm assembly by an operator who is located in a cab of a work machine, with (i) the work machine including the implement assembly and the lift arm assembly, and (ii) the implement assembly having a first coupling aperture, comprising the steps of:
actuating a cylinder so as to move a pin from a first pin position to a second pin position, wherein (i) the pin is spaced apart from the first coupling aperture when the pin is located in the first pin position, and (ii) the pin is positioned within the first coupling aperture when the pin is located in the second pin position; and
viewing the pin when the pin is located in the second pin position by the operator from a position within the cab whereby proper coupling of the implement assembly to the lift arm assembly is verified by the operator without having to exit the cab.
8. The method of claim 7, wherein:
the implement assembly includes a hinge plate having the first coupling aperture defined therein.
9. The method of claim 7, wherein:
the lift arm assembly includes a lift arm, and
the cylinder is secured to the lift arm.
10. The method of claim 8, wherein:
the hinge plate further has a hook portion,
the lift arm has a support bar, and
the hook portion hookingly engages the support bar.
11. The method of claim 9, wherein:
the implement assembly further has a support plate,
the support plate has a second coupling aperture defined therethrough, and
the pin further extends through the second coupling aperture when the pin is located in the second pin position.
12. The method of claim 7, wherein the actuating step includes the step of:
advancing a hydraulic fluid into the cylinder so as to move the pin from the first pin position to the second pin position.
13. The method of claim 7, wherein:
the work machine includes a seat positioned within the cab, and
the viewing step occurs while the operator is seated upon the seat.
14. The method of claim 7, wherein:
the viewing step includes the step of viewing an end portion of the pin when the pin is located in the second pin position by the operator from the position within the cab, and
the end portion of the pin is advanced through the first coupling aperture when the pin is moved from the first pin position to the second pin position.
15. A work machine, comprising:
a cab in which an operator may be located;
an implement assembly having an implement and a hinge plate secured thereto, wherein said hinge plate has a first coupling aperture extending therethrough; and
a lift arm assembly having a lift arm and a cylinder secured thereto, wherein (i) said cylinder is operable to move a pin between a first pin position and a second pin position, (ii) said pin is spaced apart from said coupling aperture when said pin is located in said first pin position, (iii) said pin extends through said coupling aperture when said pin is located in said second pin position, (iv) said pin is positioned within a field of vision of said operator when (A) said pin is located in said second pin position, and (B) said operator is located within said cab.
16. The work machine of claim 15, wherein:
said cab has a seat located therein on which said operator may be seated,
said pin is positioned within said field of vision of said operator when (A) said pin is located in said second pin position, and (B) said operator is seated upon said seat.
17. The work machine of claim 15, wherein:
said hinge plate further has a hook portion,
said lift arm has a support bar, and
said hook portion hookingly engages said support bar.
18. The work machine of claim 17, wherein:
said lift arm further has a support plate,
said support plate has a second coupling aperture defined therethrough, and
said pin further extends through said second coupling aperture when said pin is located in said second pin position.
19. The work machine of claim 15, wherein:
said pin is movable between said first pin position and said second pin position in response to advancement of a hydraulic fluid within said cylinder.
20. The work machine of claim 15, wherein:
said pin includes an end portion,
said end portion of said pin is advanced through said first coupling aperture when said pin is moved from said first pin position to said second pin position, and
said end portion of said pin is positioned within said field of vision of said operator when (A) said pin is located in said second pin position, and (B) said operator is located within said cab.