1. A process for using recycled waste cotton material to produce a textile product, the process comprising:
collecting different categories of waste cotton material from a variety of textile formation processes;
selecting specific categories of waste cotton material to be blended together depending on the textile product to be produced;
selecting a sequence of cleaning, opening and blending processing steps used in making a yarn depending on the textile product to be produced;
cleaning the selected specific categories of waste cotton material;
opening and blending the selected specific categories of waste cotton material into blended cotton fibers; and
processing the blended cotton fibers into the textile product to be produced.
2. The process according to claim 1, wherein the step of selecting specific categories of waste cotton material further comprises selecting an amount of the specific categories of waste cotton material based on percentages of the specific categories of waste cotton material by weight to be blended.
3. The process according to claim 2, further comprising determining the type of textile product to be produced before the step of selecting specific categories of waste cotton material to be blended together and wherein the step of selecting specific categories of waste cotton material comprises determining parameters of each process used in making the textile product to determine characteristics for each yarn used in the textile product.
4. The process according to claim 1, wherein different categories of waste cotton material collected from the textile formation processes comprise combed noils, combed waste yarn, ring spinning waste fiber, ring spun waste yarn, carding waste, opening waste, roving waste, open end spinning waste fiber, open end waste yarn, knitting waste yarn, knitting waste fiber, weaving waste fiber, weaving waste yarn, white knit cutting waste, natural knit cutting waste, white woven cutting waste, natural woven cutting waste, dyed knit cutting scraps, and dyed woven cutting scraps.
5. The process according to claim 1, wherein the cleaning, opening and blending processing steps comprise using at least one of a garnett machine, a horizontal opener, a vertical opener, a carding machine, or a draw frame.
6. The process according to claim 5, wherein the waste cotton material comprises at least one of combed waste yarn, ring spun waste yarn, weaving waste yarn, white knit cutting waste, natural knit cutting waste, white woven cutting waste, natural woven cutting waste, dyed knit cutting scraps, or dyed woven cutting scraps and the waste cotton material is processed through the garnett machine at least two times.
7. The process according to claim 5, wherein the waste cotton material is processed through at least one of the horizontal opener, the vertical opener, the carding machine, or the draw frame at least two times.
8. The process according to claim 1, wherein selecting specific categories of waste cotton material to be blended together comprises assessing the fiber length and strength of the fibers from the waste cotton material categories to permit a selection of a range of different categories while still creating a strong yarn from a spinning process.
9. The process according to claim 8, wherein a variance or standard deviation of the fiber length of fibers from the waste cotton material is larger than the variance or standard deviation of fiber length for bale laydowns of virgin cotton commonly used to make yarn.
10. The process according to claim 1, wherein the step of processing the blended cotton comprises spinning the blended cotton fibers into yarn.
11. The process according to claim 10, wherein the step of processing the blended cotton fibers further comprises forming the yarn into a fabric.
12. The process according to claim 11, wherein the step of forming the yarn into a fabric comprises at least one of knitting or weaving the yarn into a fabric.
13. The process according to claim 10, wherein the yarn is spun with a twist multiple that is between about 15% and about 30% higher than the standard twist multiple for yarn manufactured from virgin cotton for use in the same end product.
14. The process according to claim 1, wherein the step of processing the blended cotton fibers further comprises forming a garment.
15. The process according to claim 1, wherein 100% of material used in making the textile product comprises regenerated waste cotton material.
16. The process according to claim 15, wherein the step of processing the blended cotton comprises spinning the blended cotton fibers into a yarn that has a cotton count of between about 81 and about 341.
17. The process according to claim 16, wherein the yarn has a tensile strength of at least about 1900 Count-Strength-Product (CSP).
18. The process according to claim 1, wherein virgin cotton is mixed with the regenerated cotton during cleaning and opening steps to make the textile product.
19. A textile product comprising:
yarn comprising at least three different categories of waste cotton material that are formed from textile formation processes.
20. The textile product according to claim 19, wherein the yarn comprises 100% regenerated cotton.
21. The textile product according to claim 19, wherein the yarn is spun from 100% waste cotton material and has a cotton count of between about 81 to 321.
22. The textile product according to claim 19, wherein the yarn has a tensile strength of at least about 1900 CSP.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method for identifying an integrated circuit device including memory cells therewith, comprising:
(a) applying power to the memory cells;
(b) determining the initial state of the memory cells;
(c) repeating the steps (a) and (b) until a plurality of the memory cells are determined to exhibit an initial state that is relatively consistent each time the step (a) is executed; and
(d) associating the initial state of the plurality of memory cells with the integrated circuit device.
2. The method of claim 1 wherein the plurality of memory cells comprise a static random access memory.
3. The method of claim 1 wherein the initial state is represented by a binary 0 or a binary 1.
4. The method of claim 1 wherein the integrated circuit device is one of a plurality of integrated circuit devices formed from a semiconductor wafer, and wherein the initial state of the plurality of memory cells is associated with the semiconductor wafer from which the integrated circuit device was formed.
5. The method of claim 1 wherein the integrated circuit device is one of a plurality of integrated circuit devices formed from a semiconductor wafer during fabrication of a wafer lot, and wherein the initial state of the plurality of memory cells is associated with the wafer lot from which the integrated circuit device was formed.
6. The method of claim 1 wherein the integrated circuit device is formed during processing steps, and wherein the initial state of the plurality of memory cells is associated with the processing steps.
7. The method of claim 1 wherein the step (d) further comprises forming a map of the plurality of memory cells, wherein the map identifies the position of the plurality of memory cells and the initial state of each one of the plurality of memory cells.
8. The method of claim 7 wherein the step (d) further comprises associating the map with the integrated circuit device.
9. The method of claim 1 wherein each one of the plurality of memory cells comprises cross-coupled inverters.
10. The method of claim 9 wherein the cross-coupled inverters comprise active devices, and wherein the active devices are selected from among complimentary MOSFETs, NMOSFETs, PMOSFETs and bipolar transistor devices.
11. A method for manufacturing semiconductor devices, comprising:
(a) providing a semiconductor substrate;
(b) performing semiconductor fabrication processes on the semiconductor substrate to form semiconductor devices thereon, wherein the semiconductor substrate comprises a plurality of semiconductor die, and wherein each die comprises a plurality of semiconductor devices, and wherein certain of the die include memory cells;
(c) applying power to the memory cells of each die comprising memory cells;
(d) determining the initial state of the memory cells;
(e) repeating the steps (c) and (d) until a plurality of the memory cells on a die are determined to exhibit an initial state that is relatively consistent each time the step (c) is executed;
(f) associating the initial state of the plurality of memory cells with the die on which the memory cells are located;
(g) singulating the semiconductor substrate into individual die; and
(h) maintaining the association after the die are singulated.
12. The method of claim 11 wherein the step (f) further comprises associating the initial state of the plurality of memory cells with indicia related to the semiconductor substrate.
13. The method of claim 11 wherein the step (f) further comprises associating the initial state of the plurality of memory cells with the semiconductor fabrication processes performed on the semiconductor substrate according to the step (b).