What is claimed is:
1. A semiconductor device comprising:
a plurality of data lines;
a plurality of word lines crossing said data lines;
dummy word lines crossing said data lines;
a memory cell array including a plurality of memory cells arranged at cross-points of said plurality of word lines and data lines;
dummy cells arranged at cross-points of said dummy word lines and said data lines; and
a sense amplifier coupled to said data lines;
wherein said memory cell array is arranged between said dummy cells and said sense amplifier,
wherein each of the plurality of memory cells includes a read MOS transistor and a write MOS transistor,
wherein each of said dummy cells includes a first dummy read MOS transistor and a first dummy write MOS transistor,
wherein a current flowing through a channel region of the write MOS transistor flows in a direction that crosses a surface of the semiconductor substrate,
wherein a current flowing through a channel region of the first dummy write MOS transistor flows in a direction that crosses the surface of the semiconductor substrate.
2. A semiconductor device according to claim 1,
wherein said data line includes a read data line and a write data line, and said dummy cell is arranged for every said read data line.
3. A semiconductor device according to claim 1,
wherein a resistance value in a source-drain path of the first dummy read MOS transistor is substantially twice of a resistance value of a source-drain path of the read MOS transistor.
4. A semiconductor device according to claim 3,
wherein the write MOS transistor is formed above the read MOS transistor, and the first dummy write MOS transistor is formed above the first dummy read MOS transistor.
5. A semiconductor device according to claim 1,
wherein each of said dummy cells further includes a second dummy read MOS transistor coupled to the first dummy read MOS transistor in series.
6. A semiconductor device according to claim 5,
wherein each of said dummy cells further includes a second dummy write MOS transistor,
wherein the first dummy write MOS transistor is formed above the first dummy read MOS transistor and the second dummy write MOS transistor is formed above the second dummy read MOS transistor.
7. A semiconductor device according to claim 1,
wherein the channel region of the write MOS transistor is made of poly crystalline silicon, and
wherein the channel region of the dummy write MOS transistor is made of poly crystalline.
8. A semiconductor device according to claim 1,
wherein the direction of the current flowing through the channel region of the write MOS transistor is substantially vertical to the surface of the semiconductor substrate,
wherein the direction of the current flowing through the channel region of the first dummy write MOS transistor is substantially vertical to the surface of the semiconductor substrate.
9. A semiconductor device according to claim 1,
wherein each of the plurality of memory cells requires a refreshing operation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A continuous process for the conversion of inorganic solid starting particles which either are amorphous or possess a degree of order into inorganic solid product particles which
(c) when the starting particles are amorphous, possess a degree of order, or
(d) when the starting particles possess a degree of order, possess a different order, a different degree of order, or no order,
which product particles are suitable for use in or as a catalyst, in or as a carrier, or in or as an adsorbent, in which process the starting particles are dispersed in a liquid thus forming a suspension, and said suspension flows through at least two separate conversion vessels which are connected in series, said suspension being agitated in each of these vessels.
2. The continuous process of claim 1 wherein the suspension flows through from about three to about five separate conversion vessels.
3. The continuous process of claim 1 wherein the suspension flows substantially upward through the conversion vessels.
4. The continuous process of claim 1 wherein the agitation is exerted on the suspension in mainly axial direction.
5. The continuous process of claim 4 wherein the agitation is directed both upward and downward.
6. The continuous process of claim 1 wherein in at least one of the conversion vessels the process conditions differ from those in the other conversion vessel or vessels.
7. The continuous process of claim 6 wherein the process condition is the temperature.
8. The continuous process of claim 6 wherein the process condition is the pH.
9. The continuous process of claim 6 wherein the process conditions are changed by adding seeds andor additional reactants.
10. The continuous process of claim 6 wherein the process conditions are changed by separating the liquid from and adding new liquid to the particles by way of a solid-liquid separator in between two conversion vessels.
11. The continuous process of claim 6 wherein the process conditions are changed by treating the suspension with ultrasound or microwaves.
12. The continuous process of claim 1 wherein the Solids to Liquid Ratio (SLR) of the suspension is in a range from 0.5 to 1.33.
13. The continuous process of claim 1 wherein the Solids to Liquid Ratio (SLR) of the suspension is in a range from 0.65 to 1.00.
14. The continuous process of claim 1 wherein the starting particles are pre-treated by grinding, milling, extrusion, (flash) calcination, flash freezing, treatment with ultrasound, treatment with microwaves or treatment with acid or base.
15. The continuous process of claim 1 wherein the starting particles are sand particles.
16. The continuous process of claim 1 wherein the starting particles comprise sorbent microspheres, catalyst microspheres or catalyst precursor microspheres.
17. The continuous process of claim 1 wherein the starting particles comprise aluminum trihydrate or a thermally treated form thereof.
18. The continuous process of claim 1 wherein the starting particles comprise magnesium oxide, magnesium hydroxide, magnesium carbonate or magnesium hydroxy carbonate particles.
19. The continuous process of claim 1 wherein the starting particles comprise zirconia, zircon or baddeleyite.
20. The continuous process of claim 1 wherein the product particles comprise a layered magnesium silicate.
21. The continuous process of claim 1 wherein the product particles comprise anionic clay.
22. The continuous process of claim 1 wherein the product particles comprise micro-crystalline boehmite andor quasi-crystalline boehmite.
23. The continuous process of claim 1 wherein the product particles comprise a zeolite.
24. The continuous process of claim 23 wherein the zeolite is ZSM-5.
24. The continuous process claim 1 wherein at least one of the starting particles is selected from a spent catalyst, ground brick, cement particles, ground stone, or harbor sludge.
25. An apparatus suitable for carrying out the process of claim 1 comprising a feed preparation vessel for dispersing the particles in a liquid so as to form a suspension, said apparatus comprising at least two separate and substantially vertical conversion vessels which are connected in series and which each comprise a mixer for agitating the suspension.
26. The apparatus of claim 25 wherein the apparatus comprises from three to five separate and substantially vertical conversion vessels.
27. The apparatus of claim 25 wherein the conversion vessels comprise an axial or coaxial mixer.
28. The apparatus of claim 25 wherein at least one of the conversion vessels comprises means to adapt the process conditions.
29. The apparatus of claim 28 wherein the means to adapt the processing conditions is an injector.
30. The apparatus of claim 28 wherein the means to adapt the processing conditions is a transducer for the introduction of ultrasound into the suspension.