1. A head support mechanism comprising:
a rigid support arm;
a suspension for supporting, at its leading end section, a head slider with at least one head element, said suspension having a balance structure that can be pivoted in a direction crossing a surface of a recording medium using as a fulcrum a load support point established between said suspension and said support arm;
a load generation means for generating a load applied to said load support point for pressing said head slider toward the surface of said recording medium;
a horizontal rotation bearing means for pivotally bearing said support arm and said suspension so that said support arm and said suspension are capable of rotatively moving in a direction parallel to the surface of said recording medium; and
an weight means coupled to a trailing end section of said suspension to match the center of gravity of said suspension including said head slider with said load support point,
said weight means being formed around at least a part of the periphery of said horizontal rotation bearing means.
2. The head support mechanism as claimed in claim 1, wherein said weight means is formed to surround said horizontal rotation bearing means all around the periphery of said horizontal rotation bearing means.
3. The head support mechanism as claimed in claim 1, wherein said weight means is formed around the periphery of said horizontal rotation bearing means except for a trailing end section of the periphery of said horizontal rotation bearing means.
4. The head support mechanism as claimed in claim 1, wherein said weight means is also formed in a leading end side of said suspension from said load support point.
5. The head support mechanism as claimed in claim 4, wherein said weight means is thicker at a section near said load support point than that at other section.
6. The head support mechanism as claimed in claim 5, wherein said weight means is increasingly thinner away from a vicinity of said load support point toward its trailing end.
7. The head support mechanism as claimed in claim 1, wherein said weight means is formed only in a trailing end side of said suspension from said load support point.
8. The head support mechanism as claimed in claim 1, wherein said weight means is made of a molded resin.
9. The head support mechanism as claimed in claim 1, wherein said load support point is a projecting section provided on said support arm.
10. The head support mechanism as claimed in claim 1, wherein said load support point is a projecting section provided on said suspension.
11. The head support mechanism as claimed in claim 1, wherein said support arm is fixed to said horizontal rotation bearing means.
12. The head support mechanism as claimed in claim 1, wherein said load generation means comprises a plate spring coupled with said suspension and said support arm.
13. The head support mechanism as claimed in claim 1, wherein said suspension comprises a rigid load beam, and a flexure fixed to said load beam, said flexure having an elasticity to control a flying attitude of said head slider mounted at the leading end section of said suspension.
14. The head support mechanism as claimed in claim 13, wherein said load generation means comprises a plate spring formed integrally with said load beam and coupled with said support arm.
15. The head support mechanism as claimed in claim 1, wherein said head support mechanism further comprises an actuator means fixed to said horizontal rotation bearing means to rotatively move said support arm and said suspension in a direction parallel to the surface of said recording medium.
16. A head arm assembly including a head support mechanism, and a head slider provided with at least one head element, said head support mechanism comprising:
a rigid support arm;
a suspension for supporting, at its leading end section, said head slider, said suspension having a balance structure that can be pivoted in a direction crossing a surface of a recording medium using as a fulcrum a load support point established between said suspension and said support arm;
a load generation means for generating a load applied to said load support point for pressing said head slider toward the surface of said recording medium;
a horizontal rotation bearing means for pivotally bearing said support arm and said suspension so that said support arm and said suspension are capable of rotatively moving in a direction parallel to the surface of said recording medium; and
an weight means coupled to a trailing end section of said suspension to match the center of gravity of said suspension including said head slider with said load support point,
said weight means being formed around at least a part of the periphery of said horizontal rotation bearing means.
17. The head arm assembly as claimed in claim 16, wherein said weight means is formed to surround said horizontal rotation bearing means all around the periphery of said horizontal rotation bearing means.
18. The head arm assembly as claimed in claim 16, wherein said weight means is formed around the periphery of said horizontal rotation bearing means except for a trailing end section of the periphery of said horizontal rotation bearing means.
19. The head arm assembly as claimed in claim 16, wherein said weight means is also formed in a leading end side of said suspension from said load support point.
20. The head arm assembly as claimed in claim 19, wherein said weight means is thicker at a section near said load support point than that at other section.
21. The head arm assembly as claimed in claim 20, wherein said weight means is increasingly thinner away from a vicinity of said load support point toward its trailing end.
22. The head arm assembly as claimed in claim 16, wherein said weight means is formed only in a trailing end side of said suspension from said load support point.
23. The head arm assembly as claimed in claim 16, wherein said weight means is made of a molded resin.
24. The head arm assembly as claimed in claim 16, wherein said load support point is a projecting section provided on said support arm.
25. The head arm assembly as claimed in claim 16, wherein said load support point is a projecting section provided on said suspension.
26. The head arm assembly as claimed in claim 16, wherein said support arm is fixed to said horizontal rotation bearing means.
27. The head arm assembly as claimed in claim 16, wherein said load generation means comprises a plate spring coupled with said suspension and said support arm.
28. The head arm assembly as claimed in claim 16, wherein said suspension comprises a rigid load beam, and a flexure fixed to said load beam, said flexure having an elasticity to control a flying attitude of said head slider mounted at the leading end section of said suspension.
29. The head arm assembly as claimed in claim 28, wherein said load generation means comprises a plate spring formed integrally with said load beam and coupled with said support arm.
30. The head arm assembly as claimed in claim 16, wherein said head support mechanism further comprises an actuator means fixed to said horizontal rotation bearing means to rotatively move said support arm and said suspension in a direction parallel to the surface of said recording medium.
31. A disk drive apparatus including at least one recording medium, and at least one head arm assembly that has a head support mechanism and a head slider provided with at least one head element, said head support mechanism comprising:
a rigid support arm;
a suspension for supporting, at its leading end section, said head slider, said suspension having a balance structure that can be pivoted in a direction crossing a surface of a recording medium using as a fulcrum a load support point established between said suspension and said support arm;
a load generation means for generating a load applied to said load support point for pressing said head slider toward the surface of said recording medium;
a horizontal rotation bearing means for pivotally bearing said support arm and said suspension so that said support arm and said suspension are capable of rotatively moving in a direction parallel to the surface of said recording medium; and
an weight means coupled to a trailing end section of said suspension to match the center of gravity of said suspension including said head slider with said load support point,
said weight means being formed around at least a part of the periphery of said horizontal rotation bearing means.
32. The disk drive apparatus as claimed in claim 31, wherein said weight means is formed to surround said horizontal rotation bearing means all around the periphery of said horizontal rotation bearing means.
33. The disk drive apparatus as claimed in claim 31, wherein said weight means is formed around the periphery of said horizontal rotation bearing means except for a trailing end section of the periphery of said horizontal rotation bearing means.
34. The disk drive apparatus as claimed in claim 31, wherein said weight means is also formed in a leading end side of said suspension from said load support point.
35. The disk drive apparatus as claimed in claim 34, wherein said weight means is thicker at a section near said load support point than that at other section.
36. The disk drive apparatus as claimed in claim 35, wherein said weight means is increasingly thinner away from a vicinity of said load support point toward its trailing end.
37. The disk drive apparatus as claimed in claim 31, wherein said weight means is formed only in a trailing end side of said suspension from said load support point.
38. The disk drive apparatus as claimed in claim 31, wherein said weight means is made of a molded resin.
39. The disk drive apparatus as claimed in claim 31, wherein said load support point is a projecting section provided on said support arm.
40. The disk drive apparatus as claimed in claim 31, wherein said load support point is a projecting section provided on said suspension.
41. The disk drive apparatus as claimed in claim 31, wherein said support arm is fixed to said horizontal rotation bearing means.
42. The disk drive apparatus as claimed in claim 31, wherein said load generation means comprises a plate spring coupled with said suspension and said support arm.
43. The disk drive apparatus as claimed in claim 31, wherein said suspension comprises a rigid load beam, and a flexure fixed to said load beam, said flexure having an elasticity to control a flying attitude of said head slider mounted at the leading end section of said suspension.
44. The disk drive apparatus as claimed in claim 43, wherein said load generation means comprises a plate spring formed integrally with said load beam and coupled with said support arm.
45. The disk drive apparatus as claimed in claim 31, wherein said head support mechanism further comprises an actuator means fixed to said horizontal rotation bearing means to rotatively move said support arm and said suspension in a direction parallel to the surface of said recording medium.
46. The disk drive apparatus as claimed in claim 31, wherein said disk apparatus comprises a plurality of the recording media, a plurality of the head arm assemblies sharing said horizontal rotation bearing means, and the single actuator means fixed to said horizontal rotation bearing means to rotatively move said plurality of the head arm assemblies in a direction parallel to the surface of said recording media.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device for wireless communication, comprising:
a first power supply voltage to which an external power supply is supplied;
a second power supply voltage;
a first terminal for coupling to an antenna;
a p-channel first MISFET having a source-drain path coupled between the first terminal and the first power supply voltage to drive the antenna;
an n-channel second MISFET having a source-drain path coupled between the first terminal and the second power supply voltage to drive the antenna; and
a rectifying circuit section coupled to the first terminal,
wherein the rectifying circuit section uses an alternating current signal inputted to the first terminal via the antenna to generate a third power supply voltage having a value higher than that of the first power supply voltage and higher than that of the high-potential voltage occurring at the first terminal when the alternating current signal has a maximum amplitude, and
wherein the third power supply voltage is used as a bulk voltage of the first MISFET.
2. A semiconductor device for wireless communication according to claim 1,
wherein the first MISFET includes:
a p-type first semiconductor layer; and
an n-type second semiconductor layer which is formed in the first semiconductor layer and in which a channel of the first MISFET is formed,
wherein the first semiconductor layer is supplied with a voltage level at the same potential as that of the second power supply voltage.
3. A semiconductor device for wireless communication according to claim 1,
wherein the second MISFET includes:
a p-type third semiconductor layer;
an n-type fourth semiconductor layer formed in the third semiconductor layer; and
a p-type fifth semiconductor layer which is formed in the fourth semiconductor layer and in which a channel of the second MISFET is formed,
wherein the fourth semiconductor layer is supplied with a voltage level at the same potential as that of the second power supply voltage.
4. A semiconductor device for wireless communication according to claim 1, wherein the third power supply voltage is used also as a gate voltage when the first MISFET is driven to be turned OFF.
5. A semiconductor device for wireless communication according to claim 1,
wherein the rectifying circuit section includes:
a first rectifying circuit which receives the alternating current signal inputted thereto to perform a rectifying operation via an element having a diode function;
a first capacitor coupled between an output node of the first rectifying circuit and a ground power supply voltage;
a second capacitor having one terminal to which the alternating current signal is inputted;
a second rectifying circuit which receives a signal from the other terminal of the second capacitor inputted thereto to perform a rectifying operation via an element having a diode function; and
a third capacitor coupled between an output node of the second rectifying circuit and the output node of the first rectifying circuit,
wherein the third power supply voltage is generated from the output node of the second rectifying circuit, and
wherein a fourth power supply voltage is generated from the output node of the first rectifying circuit.
6. A semiconductor device for wireless communication according to claim 5, further comprising:
a first switch circuit which selectively supplies either the third power supply voltage or the first power supply voltage as the bulk voltage of the first MISFET.
7. A semiconductor device for wireless communication according to claim 6, further comprising:
a determining circuit which operates using the power supply voltage generated by the rectifying circuit section to determine a magnitude of the external power supply,
wherein the first switch circuit has:
a p-channel third MISFET having one of sourcedrain regions thereof coupled to the first power supply voltage and the other thereof coupled to the bulk voltage of the first MISFET such that an ONOFF state thereof is controlled depending on a result of the determination by the determining circuit; and
a p-channel fourth MISFET having one of sourcedrain regions thereof coupled to the third power supply voltage and the other thereof coupled to the bulk voltage of the first MISFET such that an ONOFF state thereof is controlled complementarily to the third MISFET depending on the result of the determination by the determining circuit.
8. A semiconductor device for wireless communication according to claim 7,
wherein the first switch circuit further has:
a p-channel fifth MISFET having one of sourcedrain regions thereof coupled to the first power supply voltage, the other thereof coupled to the bulk voltage of the first MISFET, and a gate electrode thereof coupled to the third power supply voltage; and
a p-channel sixth MISFET having one of sourcedrain regions thereof coupled to the third power supply voltage, the other thereof coupled to the bulk voltage of the first MISFET, and a gate electrode thereof coupled to the first power supply voltage.
9. A semiconductor device for wireless communication according to claim 5,
wherein, as the other of the external power supplies, each of a higher-potential fifth power supply voltage and a lower-potential sixth power supply voltage is further supplied,
the semiconductor device for wireless communication further comprising:
a second switch circuit which selectively supplies either the fourth power supply voltage or the fifth power supply voltage as an internal power supply voltage.
10. A semiconductor device for wireless communication according to claim 9, further comprising:
a regulator circuit which controls a magnitude of the fourth power supply voltage,
wherein the regulator circuit has:
a seventh MISFET having a source-drain path coupled between the fourth power supply voltage and the ground power supply voltage; and
an amplifier circuit which detects the internal power supply voltage coupled to the fourth power supply voltage via the second switch circuit, compares the internal power supply voltage with a preset reference voltage, and drives a gate electrode of the seventh MISFET according to a result of the comparison.
11. A semiconductor device for wireless communication according to claim 5, further comprising:
a second terminal which serves as a terminal for receiving a modulation signal inputted from the antenna;
a demodulating circuit for demodulating the modulation signal; and
a shunt switch for short-circuiting the output nodes of the first and second rectifying circuits to the ground power supply voltage.
12. A semiconductor device for wireless communication according to claim 1, further comprising:
a first feedback path provided between the first terminal and a gate electrode of the first MISFET to retard a shift of a gate voltage of the first MISFET using a resistive component and a capacitive component; and
a second feedback path provided between the first terminal and a gate electrode of the second MISFET to retard a shift of a gate voltage of the second MISFET using a resistive component and a capacitive component,
wherein the first feedback path includes a first coupling switch for controlling conductionnon-conduction between the first terminal and the gate electrode of the first MISFET, and
wherein the second feedback path includes a second coupling switch for controlling conductionnon-conduction between the first terminal and the gate electrode of the second MISFET.
13. A semiconductor device for wireless communication according to claim 1,
wherein the first MISFET includes a plurality of MISFETs coupled in parallel to each other and having different driving abilities,
wherein the second MISFET includes a plurality of MISFETs coupled in parallel to each other and having different driving abilities,
wherein, when turning ON the first MISFET, the semiconductor device for wireless communication selects the MISFET to be actually turned ON from among the MISFETs included in the first MISFET, and
wherein, when turning ON the second MISFET, the semiconductor device for wireless communication selects the MISFET to be actually turned ON from among the MISFETs included in the second MISFET.
14. A semiconductor device for wireless communication according to claim 13, further comprising:
a p-channel eighth MISFET having a source-drain path coupled between the first terminal and the second power supply voltage to drive the antenna,
wherein the eighth MISFET includes a plurality of MISFETs coupled in parallel to each other and having different driving abilities, and
wherein, when turning ON the eighth MISFET, the semiconductor device for wireless communication selects the MISFET to be actually turned ON from among the MISFETs included in the eighth MISFET.
15. A semiconductor device for wireless communication, comprising:
a first terminal to which a first power supply voltage is supplied as one of external power supplies and an alternating current signal inputted via an antenna is transmitted;
a rectifying circuit section coupled to the first terminal to rectify the alternating current signal and thereby generate a second power supply voltage;
a regulator circuit which generates a third power supply voltage having a predetermined value from the second power supply voltage;
a second terminal serving as a terminal for supplying a direct current voltage toward the outside;
a p-channel first MISFET having a source-drain path coupled between the first power supply voltage and the second terminal;
a p-channel second MISFET having a source-drain path coupled between the third power supply voltage and the second terminal; and
a switch circuit which selects either the first power supply voltage or the third power supply voltage and outputs the selected power supply voltage as a fourth power supply voltage,
wherein the fourth power supply voltage is supplied to a bulk of each of the first and second MISFETs.
16. A semiconductor device for wireless communication according to claim 15, further comprising:
a determining circuit which operates using the second power supply voltage generated by the rectifying circuit section to determine a magnitude of the external power supply,
wherein the switch circuit has;
a p-channel third MISFET having one of sourcedrain regions thereof coupled to the first power supply voltage and the other thereof coupled to the fourth power supply voltage such that an ONOFF state thereof is controlled depending on a result of the determination by the determining circuit; and
a p-channel fourth MISFET having one of sourcedrain regions thereof coupled to the third power supply voltage and the other thereof coupled to the fourth power supply voltage such that an ONOFF state thereof is controlled complementarily to the third MISFET depending on the result of the determination by the determining circuit.
17. A semiconductor device for wireless communication according to claim 16,
wherein the switch circuit further has:
a p-channel fifth MISFET having one of sourcedrain regions thereof coupled to the first power supply voltage, the other thereof coupled to the fourth power supply voltage, and a gate electrode thereof coupled to the third power supply voltage; and
a p-channel sixth MISFET having one of sourcedrain regions thereof coupled to the third power supply voltage, the other thereof coupled to the fourth power supply voltage, and a gate electrode thereof coupled to the first power supply voltage.
18. A semiconductor device for wireless communication according to claim 16,
wherein the switch circuit further has:
an n-channel seventh MISFET having a drain region and a gate electrode thereof each coupled to the first power supply voltage and a source region thereof coupled to the fourth power supply voltage; and
an n-channel eighth MISFET having a drain region and a gate electrode thereof each coupled to the third power supply voltage and a source region thereof coupled to the fourth power supply voltage.