1. An intermediate process device, comprising:
a nanowire connecting first and second silicon-on-insulator (SOI) pads;
a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor; and
silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire.
2. The device according to claim 1, wherein a material of the gate conductor is selected from the group comprising tantalum nitride (TaN) and titanium nitride (TiN).
3. The device according to claim 1, wherein the gate conductor comprises a film having a thickness of about 2-4 nm.
4. The device according to claim 1, wherein the fully silicided material comprises a silicide that forms above about 550\xb0 C.
5. The device according to claim 1, wherein the fully silicided material comprises at least one of nickel (Ni), platinum (Pt), cobalt (Co), tungsten (W) and titanium (Ti).
6. The device according to claim 1, wherein a material of the gate conductor is determinative of a work function of the gate conductor independent of the fully silicided material.
7. An intermediate process device, comprising:
first and second pads;
a nanowire, formed in a silicon-on-insulator (SOI) layer disposed over a buried oxide (BOX) layer, connecting the first and second pads;
a gate surrounding the nanowire and including a dielectric adjacent the nanowire, a gate conductor adjacent the dielectric and poly-Si surrounding the gate conductor; and
silicide forming metal disposed at least along sidewalls of the poly-Si to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain on the nanowire.
8. The device according to claim 7, wherein the nanowire is substantially cylindrical.
9. The device according to claim 7, wherein the gate perimetrically surrounds the nanowire.
10. The device according to claim 7, wherein a material of the dielectric is selected from the group comprising silicon dioxide (SiO2), silicon oxynitride (SiON) and hafnium oxide (HfO2).
11. The device according to claim 7, wherein a material of the gate conductor is selected from the group comprising tantalum nitride (TaN) and titanium nitride (TiN).
12. The device according to claim 7, wherein the gate conductor comprises a film having a thickness of about 2-4 nm.
13. The device according to claim 7, wherein the fully silicided material comprises a silicide that forms above about 550\xb0 C.
14. The device according to claim 7, wherein the fully silicided material comprises at least one of nickel (Ni), platinum (Pt), cobalt (Co), tungsten (W) and titanium (Ti).
15. The device according to claim 7, wherein a material of the gate conductor is determinative of a work function of the gate conductor independent of the fully silicided material.
16. A method to induce radial strain in a field effect transistor (FET) nanowire, the method comprising:
surrounding the nanowire with a gate conductor and surrounding the gate conductor with poly-Si to define a channel region in said nanowire; and
reacting the poly-Si with silicide forming metal deposited thereon to form a fully silicided (FUSI) material to induce radial strain in the nanowire prior to fabrication of source and drain regions relative to the nanowire.
17. The method according to claim 16, further comprising depositing the silicide forming metal on sidewalls of the poly-Si.
18. The method according to claim 16, further comprising fabricating the source and drain regions relative to the nanowire subsequent to the reacting.
19. The method according to claim 18, further comprising selectively etching the gate conductor outside the channel region.
20. The method according to claim 18, wherein the fabricating of the source and drain regions comprises:
forming spacers on opposite sides of the FUSI material;
epitaxially thickening non-encapsulated portions of the nanowire; and
applying a self-aligned silicide to form a silicide over the source and drain regions.
21. The method according to claim 20, further comprising epitaxially thickening silicon-on-insulator (SOI) pads at the source and drain regions.
22. The method according to claim 16, wherein an intensity of the induced strain is tuned by a change of a silicide formation temperature.
23. A method to induce radial strain in a field effect transistor (FET) nanowire, the method comprising:
surrounding the nanowire with a gate conductor and surrounding the gate conductor with poly-Si;
reacting the poly-Si with silicide forming metal deposited thereon to form a fully silicided (FUSI) material to induce radial strain in the nanowire;
forming spacers on opposing sides of the FUSI material; and
fabricating source and drain regions relative to the nanowire subsequent to the reacting.
24. The method according to claim 23, wherein the reacting is initiated from a poly-Si sidewall and proceeds towards a center of the gate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A battery pack comprising:
one or a plurality of cell blocks in which one or a plurality of secondary battery cells are connected at least are of in series and in parallel; and
a control section for measuring a voltage and a charge current of the one or the plurality of cell blocks to detect an abnormality of a cell block on the basis of a measurement result,
wherein the control section
calculates time differentials of the voltage and the charge current and second-order time differentials of the voltage and the charge current for the one or the plurality of cell blocks on the basis of the measured voltage and charge current;
determines that a cell block is abnormal in a case where the time differential of the voltage is less than a prescribed value, the second-order time differential of the voltage is less than the prescribed value, and the second-order time differential of the charge current is not less than the prescribed value; and
determines that a cell block is abnormal in a case where the time differential of the charge current is more than the prescribed value, the second-order time differential of the charge current is more than the prescribed value, and the second-order time differential of the voltage is not more than the prescribed value.
2. The battery pack according to claim 1, further comprising:
a chargedischarge switch for controlling a chargedischarge current for the cell blocks on the basis of control performed by the control section,
wherein the control section turns off the chargedischarge switch in a case where an abnormality of a cell block is detected.
3. The battery pack according to claim 1, further comprising:
a communication terminal for communication with an external electronic device,
wherein the control section transmits information indicating that an abnormality has been detected to the external electronic device via the communication terminal in a case where an abnormality of a cell block is detected.
4. A battery pack comprising:
one or a plurality of cell blocks in which one or a plurality of secondary battery cells are connected at least one of in series and in parallel; and
a control section for measuring a voltage and a charge current of the one or the plurality of cell blocks to detect an abnormality of a cell block on the basis of a measurement result,
wherein the control section
calculates a time differential of the voltage and second-order time differentials of the voltage and the charge current for the one or the plurality of cell blocks on the basis of the measured voltage and charge current;
extracts a first time differential which is maximum and a second time differential which is minimum from the time differentials of the voltage for the one or the plurality of cell blocks; and
determines that a cell block corresponding to the second time differential is abnormal in a case where a difference between the first time differential and the second time differential is less than a prescribed value, the second-order time differential of the voltage is less than the prescribed value, and the second-order time differential of the charge current is not less than the prescribed value.
5. A control method for a battery pack, comprising:
measuring a voltage and a charge current of one or a plurality of cell blocks in which one or a plurality of secondary battery cells are connected in series andor in parallel;
calculating time differentials of the voltage and the charge current and second-order time differentials of the voltage and the charge current for the one or the plurality of cell blocks on the basis of the measured voltage and charge current;
determining that a cell block is abnormal in a case where the time differential of the voltage is less than a prescribed value, the second-order time differential of the voltage is less than the prescribed value, and the second-order time differential of the charge current is not less than the prescribed value; and
determining that a cell block is abnormal in a case where the time differential of the charge current is more than the prescribed value, the second-order time differential of the charge current is more than the prescribed value, and the second-order time differential of the voltage is not more than the prescribed value.
6. A control method for a battery pack, comprising:
measuring a voltage and a charge current of one or a plurality of cell blocks in which one or a plurality of secondary battery cells are connected in series andor in parallel;
calculating a time differential of the voltage and second-order time differentials of the voltage and the charge current for the one or the plurality of cell blocks on the basis of the measured voltage and charge current;
extracting a first time differential which is maximum and a second time differential which is minimum from the time differentials of the voltage for the one or the plurality of cell blocks; and
determining that a cell block corresponding to the second time differential is abnormal in a case where a difference between the first time differential and the second time differential is less than a prescribed value, the second-order time differential of the voltage is less than the prescribed value, and the second-order time differential of the charge current is not less than the prescribed value.