What is claimed is:
1. A reformer controlling apparatus, comprising:
a reformer having a catalyst unit including a catalyst promoting a steam reforming reaction and a catalyst for promoting a partial oxidation reaction;
a raw fuel gas supplier supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit;
an oxidation gas supplier supplying oxidation gas containing oxygen to said catalyst unit;
a first reaction state detector detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit
a second reaction state detector detecting a state of a reaction in the whole of the catalysts in said catalyst unit;
a first corrector correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit, based on said state of the reaction detected by said second reaction state detector; and
a second corrector correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof based on said state of the reaction detected by said first reaction state detector.
2. The reformer controlling apparatus according to claim 1, wherein said first reaction state detectors are set in plural positions, and a detection signal switcher is provided, which switches, with passage of time, a detection signal supplied to said second corrector among detection signals indicating said reaction state detected by said first reaction state detector.
3. The reformer controlling apparatus according to claim 1, wherein said first motion state detector detects a temperature state as said reaction state.
4. The reformer controlling apparatus according to claim 1, wherein said first reaction state detector detects a reaction state at a spot of said catalyst unit where the maximum temperature is generated.
5. The reformer controlling apparatus according to claim 1, wherein said first reaction state detectors for detecting a temperature state are set in plural positions, a maximum temperature selector for selecting the highest temperature among detected temperatures output from the first reaction state detectors is provided, and said second corrector uses an output of the maximum temperature selector.
6. The reformer controlling apparatus according to claim 1, wherein said second reaction state detector detects a temperature state as said reaction state.
7. A reformer controlling apparatus, comprising:
a reformer having a catalyst unit including a catalyst for promoting a steam reforming reaction and a catalyst for promoting a partial oxidation reaction;
raw fuel gas supplying means for supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit;
oxidation gas supplying means for supplying oxidation gas containing oxygen to said catalyst unit;
first reaction state detecting means for detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit;
second reaction state detecting means for detecting a state of a con in the whole of the catalysts in said catalyst unit;
first correcting means for correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit, based on said state of the reaction detected by said second reaction state detecting means; and
second correcting means for correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof based on said state of the reaction detected by said first reaction state detecting means.
8. A method of controlling a reformer, comprising:
promoting a steam reform reaction and a partial oxidation reaction in a catalyst unit of said reformer;
supplying raw fuel gas containing hydrocarbon and steam to said catalyst unit by a raw fuel supplier;
supplying oxidation gas containing oxygen to said catalyst unit by an oxidation gas supplier;
detecting a state of a reaction progressing at an upstream portion of flows of said raw fuel gas and said oxidation gas in said catalyst unit by a first reaction state detector;
detecting a state of a reaction in the whole of the catalysts in said catalyst unit by a second reaction state detector;
correcting feed amounts of said raw fuel gas and said oxidation gas, which are supplied to said catalyst unit by a first corrector, based on said state of the reaction detected by said second reaction state detector; and
correcting the feed amount of said oxidation gas, which is supplied to said catalyst unit andor a feed timing thereof by a second corrector, based on said state of the reaction detected by said first reaction state detector.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A package structure having an embedded electronic component, comprising:
a carrier having a cavity penetrating therethrough and a metal layer disposed at one side of the carrier for covering one end of the cavity;
a semiconductor chip having opposite active and non-active surfaces and received in the cavity of the carrier with its non-active surface attached to the metal layer, wherein the active surface of the semiconductor chip has a plurality of electrode pads formed thereon, and each of the electrode pads has a solder bump disposed thereon;
a dielectric layer formed on the carrier and the semiconductor chip for encapsulating the solder bumps and fill up a spacing between the semiconductor chip and the cavity of the carrier, wherein the dielectric layer has a plurality of through holes formed therein for exposing the solder bumps, respectively;
a wiring layer formed on the dielectric layer and having a plurality of conductive pads;
an insulating protection layer formed on the dielectric layer and the wiring layer and having a plurality of first openings formed therein and communicating with the through holes of the dielectric layer for exposing the solder bumps; and
a solder material filled in the first openings and the through holes for electrically connecting the wiring layer and the solder bumps.
2. The structure of claim 1, wherein the metal layer is a copper layer.
3. The structure of claim 1, wherein the insulating protection layer has a plurality of second openings for exposing the conductive pads, respectively, so as for a plurality of solder balls to be disposed thereon.
4. The structure of claim 3, wherein the first openings are in communication with the second openings so as for the solder balls to come into contact with the solder material.
5. A fabrication method of a package structure having an embedded electronic component, comprising the steps of:
providing a carrier having a cavity penetrating therethrough and a metal layer disposed at one side thereof for covering one end of the cavity;
disposing a semiconductor chip having opposite active and non-active surfaces, in the cavity of the carrier with the non-active surface of the semiconductor chip attached to the metal layer of the carrier, wherein the active surface of the semiconductor chip has a plurality of electrode pads formed thereon, and each of the electrode pads has a solder bump disposed thereon;
forming a dielectric layer on the carrier and the semiconductor chip for encapsulating the solder bumps and filling up a spacing between the semiconductor chip and the cavity of the carrier;
forming on the dielectric layer a wiring layer having a plurality of conductive pads;
forming a plurality of through holes in the dielectric layer for exposing the solder bumps, respectively, and having an end of each of the through holes connect the wiring layer;
forming an insulating protection layer on the dielectric layer and the wiring layer, wherein the insulating protection layer has a plurality of first openings formed therein for communicating with the through holes of the dielectric layer, so as to thereby expose the solder bumps; and
filling a solder material in the first openings of the insulating protection layer and the through holes of the dielectric layer for electrically connecting the wiring layer and the solder bumps.
6. The method of claim 5, wherein the carrier is a copper-clad substrate and the metal layer is a copper layer.
7. The method of claim 5, wherein the insulating protection layer further has a plurality of second openings for exposing the conductive pads, respectively.
8. The method of claim 7, further comprising forming a plurality of solder balls on the conductive pads, respectively.
9. The method of claim 8, wherein the first openings are in communication with the second openings so as for the solder balls to come into contact with the solder material.
10. The method of claim 5, further comprising the steps of:
forming a plurality of vias in the dielectric layer for exposing the solder bumps, respectively;
forming conductive vias in the vias for electrically connecting the wiring layer and the solder bumps; and
mounting a plurality of solder balls on the conductive pads, respectively,
wherein the insulating protection layer has a plurality of openings formed therein for exposing the conductive pads.