1. A method for converting an interlaced video signal to a progressive scan video signal comprising the steps of:
for each pixel in each missing line of a video field in a video signal to be converted, deriving correlation data for each of a set of possible interpolations between adjacent pixels to be used in reconstructing the missing pixel;
from the correlation data deriving a confidence measure;
selecting adjustment data for the correlation data in dependence on the confidence measure;
adjusting the correlation data with the adjustment data;
determining from the adjusted correlation data the interpolation scheme most likely to produce an accurate missing pixel; and
interpolating the missing pixel using the selected interpolation scheme.
2. A method according to claim 1 in which the step of deriving a confidence measure comprising the step of determining the number of minima and maxima in the correlation data and determining the confidence measure therefrom.
3. A method according to claim 1 in which the step of selecting adjustment data selects data which will cause greater adjustment of the correlation data as the confidence measure decreases.
4. A method according to claim 3 in which the adjustment data selected causes greater adjustment to correlation data derived from pixels furthest from the pixel to be reconstructed.
5. A method according to claim 1 in which the correlation data comprises Sum of Absolute Differences (SAD) data.
6. A method according to claim 5 in which the step of determining the interpolation scheme most likely to produce an accurate missing pixel comprises means for determining the adjusted SAD data with the lowest value.
7. Apparatus for converting an interlaced video signal to a progressive scan video signal comprising:
means for each pixel on each missing line of a video field in a video signal to be converted which derives correlation data for each of a set of possible interpolations between adjacent pixels to be used in reconstructing the missing pixel;
means for deriving a confidence measure from the correlation data;
means for selecting adjustment data from correlation data in dependence on the confidence measure;
means for adjusting the correlation data with the adjustment data;
means for determining from the adjusted correlation data the interpolation scheme most likely to produce an accurate missing pixel; and
means for interpolating the missing pixel using the selected interpolation scheme.
8. A method according to claim 7 in which the means for deriving a confidence measure comprises means for determining the number of minima and maxima in the correlation data and means for determining the confidence measure therefrom.
9. Apparatus according to claim 7 in which the means for selecting adjustment data selects data which will cause greater adjustment of the correlation data as the confidence measure decreases.
10. Apparatus according to claim 9 in which the selected adjustment data causes greater adjustment to the correlation data derived from pixels furthest from the pixel to be reconstructed.
11. Apparatus according to claim 7 in which the correlation data comprises Sum of Absolute Differences (SAD) data.
12. Apparatus according to claim 11 in which the means for determining the interpolation scheme most likely to produce an accurate missing pixel comprises means for determining the adjusted SAD data with the lowest value.
13. A television receiver including apparatus according to claim 7.
14. A method according to claim 2 in which the step of selecting adjustment data selects data which will cause greater adjustment of the correlation data as the confidence measure decreases.
15. A method according to claim 14 in which the adjustment data selected causes greater adjustment to correlation data derived from pixels furthest from the pixel to be reconstructed.
16. Apparatus according to claim 8 in which the means for selecting adjustment data selects data which will cause greater adjustment of the correlation data as the confidence measure decreases.
17. Apparatus according to claim 16 in which the selected adjustment data causes greater adjustment to the correlation data derived from pixels furthest from the pixel to be reconstructed.
18. Apparatus according to claim 8 in which the correlation data comprises Sum of Absolute Differences (SAD) data.
19. Apparatus according to claim 9 in which the correlation data comprises Sum of Absolute Differences (SAD) data.
20. Apparatus according to claim 10 in which the correlation data comprises Sum of Absolute Differences (SAD) data.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for post-etch cleaning of a substrate having magnetic random access memory (MRAM) structures defined therein, the method comprising:
providing a substrate having MRAM structures being fabricated thereon, the MRAM structures including copper wiring end multiple-tunnel junction (MTJ) structures and materials;
inserting the substrate into a first brush box, the first brush box being configured to provide double-sided mechanical cleaning of an active and a backside surface of the substrate;
applying a first brush against the active surface of the substrate and applying a second brush against the backside surface of the substrate, the first brush and the second brush being PVA brushes having nodules and being applied at a pressure to achieve brush compression between approximately 1\u20135 mm;
introducing a copper compatible chemistry into the first brush box for cleaning the active and backside surfaces of the substrate;
inserting the substrate into a second brush box, the second brush box being configured to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate;
applying a first brush of the second brush box against the active surface of the substrate and applying a second brush of the second brush box against the backside surface of the substrate, the first brush of the second brush box and the second brush of the second brush box being PVA brushes having nodules, and being applied at a pressure to achieve a brush compression between approximately 1 and 5 mm;
introducing a burst of chemistry into the second brush box; and introducing a deionized water (DIW) rinse into the second brush box, wherein the copper compatible chemistry is ammonia based buffered solution containing chelating agent.
2. The method of claim 1, further comprising:
inserting the substrate into a spin-rinse-dry (SRD) apparatus for final rinse and dry of the substrate.
3. The method of claim 1, wherein the substrate is rotated in the first and the second brush boxes at a rotation rate of approximately 10 RPM to approximately 200 RPM.
4. The method of claim 1, wherein the substrate is rotated in the first and the second brush boxes at a rotation rate of approximately 20 RPM.
5. The method of claim 1, wherein the first and second brushes in the first brush box and the first and second brushes of the second brush box are rotated at a rotation rate of approximately 10 RPM to approximately 400 RPM.
6. The method of claim 1, wherein the first and second brushes in the first brush box and the first and second brushes of the second brush box are rotated at a rotation rate of approximately 120 RPM.
7. The method of claim 1, wherein the copper compatible chemistry is introduce into the first brush box at a flow rate of approximately 100 to approximately 1000 mlmin.
8. The method of claim 1, wherein the cleaning the active and backside surfaces of the substrate in the first brush box is for a period of approximately 20 to 80 seconds.
9. The method of claim 1, wherein the cleaning the active and backside surfaces of the substrate in the first brush box is for a period of approximately 40 seconds.
10. The method of claim 1, wherein the DIW rinse includes a mixture of DIW and one of citric acid and ammonium hydroxide.
11. The method of claim 1, wherein the DIW rinse is introduced at a flow rate of not less than 500 mlmin.
12. The method of claim 11, wherein the DIW rinse is introduced at the flow rate of 2 litersmin.
13. A method for chemically assisted mechanical cleaning of magnetic random access memory (MRAM) structures, the method comprising:
providing a substrate having MRAM structures being fabricated thereon, the MRAM structures including copper wiring and multiple-tunnel junction (MTJ) structures and materials, and the substrate having an active surface and a backside surface;
inserting the substrate into a first brush box having a pair of brushes to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate;
introducing a copper compatible chemistry into the first brush box for cleaning the active and backside surfaces of the substrate the copper compatible chemistry is ammonia based buffered solution containing chelating agent;
inserting the substrate into a second brush box having a pair of brushes to provide double-sided mechanical cleaning of the active and backside surfaces of the substrate; and
introducing a deionized water (DIW) rinse into the second brush box,
wherein each of the pair of brushes in the first brush box and in the second brush box is a PVA brush having nodules, and each of the pair of brushes being applied against the active and the backside surfaces of the substrate at a pressure to achieve a brush compression of between approximately 1 and 5 mm.
14. The method of claim 13, wherein the copper compatible chemistry is introduced into the first brush box at a flow rate of between approximately 100 and 1000 mlmin, and the DIW rinse is introduced into the second brush box at a flow rate of not less than 500 mlmin.
15. A method for post-etch cleaning of a substrate having magnetic random access memory (MRAM) structures defined therein, the method comprising:
providing a substrate having MRAM structures being fabricated thereon, the MRAM structures including copper wiring and multiple-tunnel junction (MTJ) structures and materials;
inserting the substrate into a brush box, the brush box being configured to provide double-sided mechanical cleaning of an active and a backside surface of the substrate;
applying a first brush against the active surface of the substrate and applying a second brush against the backside surface of the substrate, the first brush and the second brush being PVA brushes having nodules and being applied at a pressure to achieve brush compression between approximately 1\u20135 mm;
introducing a copper compatible chemistry into the first brush box for cleaning the active and backside surfaces of the substrate; and
inserting the substrate into a drying apparatus for final rinse and dry of the substrate, wherein the copper compatible chemistry is ammonia based buffered solution containing chelating agent.