1. An infrared steering method for controlling a plurality of infrared controlled devices with a plurality of infrared controlling devices, characterized in that a matching signal is identified as a signal for the infrared controlled device by comparing a time interval between the termination time of a start signal and the initiation time of a steering signal transmitted by the infrared controlling device with a specific time interval previously fixed in every infrared controlled device.
2. An infrared steering method according to claim 1, characterized in that the infrared controlling device transmits a synchronization signal and the start signal to output the steering signal after a waiting time previously determined.
3. An infrared steering method according to claim 1, characterized in that the infrared controlling device outputs the start signal when the infrared signal transmitted by another infrared controlling device with the synchronization signal is received and outputs the start signal after outputting the synchronization signal when free.
4. An infrared steering method according to claim 1, characterized in that a specific time length previously fixed in every infrared controlled device of the time interval between the termination time of the start signal and the initiation time of the steering signal is determined in accordance with a layout of the switch provided in an ID setting section of the infrared controlling device.
5. An infrared steering method according to claim 1, characterized in that the infrared controlled device receives the synchronization signal and the start signal, and then receives the steering signal to measure the time interval between the termination time of the synchronization signal and the initiation time of the steering signal and compares with the waiting time fixed previously for self-identification.
6. An infrared steering system for controlling a plurality of infrared controlled devices with a plurality of infrared controlling devices, characterized in that the matching signal is identified as the signal for the infrared controlled device by comparing the time interval between the termination time of the start signal and the initiation time of the steering signal transmitted by the infrared controlling device with the specific time interval previously fixed in every infrared controlled device.
7. An infrared steering system according to claim 6, characterized in that the infrared controlling device is provided with a inputting means for receiving a steering information, an object setting means for providing an object identification information for specifying a steered object, a means for transmitting the steering information, a means for receiving a transmission signal of the other infrared controlling device.
8. An infrared steering system according to claim 6, characterized in that the infrared controlled device is provided with a self setting means for providing a self-identification information, a means for extracting a self steering information from a reception signal by the self-identification information, a signal converting means for converting the extracted steering information into a driving signal, a drive controlling means for operating a driving means in response to the driving signal.
9. An infrared steering program for controlling a plurality of infrared controlled devices with a plurality of infrared controlling devices, characterized in that the matching signal is identified as the signal for the infrared controlled device by comparing the time interval between the termination time of the start signal and the initiation time of the steering signal transmitted by the infrared controlling device with the specific time interval previously fixed in every infrared controlled device.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein
the reflective layer is a MoSi multilayer reflective film,
the protective layer is a Ru layer or a Ru compound layer, and
an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.
2. The multilayer mirror for EUV lithography according to claim 1, wherein the uppermost layer of the reflective layer made of a MoSi multilayer reflective film is a Si film, and the intermediate layer is formed in contact with the Si film.
3. The multilayer mirror for EUV lithography according to claim 1, wherein the thickness of the intermediate layer is from 0.2 to 2.5 nm.
4. The multilayer mirror for EUV lithography according to claim 1, wherein the surface roughness rms of the surface of the protective layer is at most 0.5 nm.
5. The multilayer mirror for EUV lithography according to claim 1, wherein the thickness of the protective layer is from 1 to 10 nm.
6. A process for producing a multilayer mirror for EUV lithography (EUVL), which comprises forming a multilayer reflective film for reflecting EUV light on a film-forming surface of a substrate and then, forming a protective layer for protecting the multilayer reflective film, on the multilayer reflective film, to produce a multilayer mirror for EUVL, wherein
the multilayer reflective film is a MoSi multilayer reflective film,
the protective layer is a Ru layer or a Ru compound layer, and
after forming the MoSi multilayer reflective film, the surface of a Si layer as the uppermost layer of the MoSi multilayer reflective film is exposed to a nitrogen-containing atmosphere without exposing it to the atmospheric air, and then, the protective layer is formed.
7. The process for producing a multilayer mirror for EUVL according to claim 6, wherein the product of the nitrogen partial pressure (Torr) of the nitrogen-containing atmosphere and the exposure time (s) is at least 1\xd710\u22126 Torts, and the temperature of the nitrogen-containing atmosphere is from 0 to 170\xb0 C.
8. The process for producing a multilayer mirror for EUVL according to claim 6, wherein the product of the nitrogen partial pressure (Torr) of the nitrogen-containing atmosphere and the exposure time (s) is at least 1\xd710\u22126 Torr\xb7s, and the temperature of the nitrogen-containing atmosphere is from 0 to 160\xb0 C.
9. The process for producing a multilayer mirror for EUVL according to claim 6, wherein the product of the nitrogen partial pressure (Torr) of the nitrogen-containing atmosphere and the exposure time (s) is at least 1\xd710\u22126 Torr\xb7s, and the temperature of the nitrogen-containing atmosphere is from 0 to 150\xb0 C.
10. The process for producing a multilayer mirror for EUVL according to claim 6, wherein when the surface of the Si layer is exposed to the nitrogen-containing atmosphere, the nitrogen-containing atmosphere is maintained to be in a plasma state, or the surface of the Si layer is subjected to thermal treatment, or the surface of the Si layer is irradiated with ultraviolet rays.
11. A process for producing a semiconductor integrated circuit, which comprises subjecting an object to be exposed to exposure by means of the multilayer mirror for EUV lithography as defined in any one of claims 1 to 5, to produce a semiconductor integrated circuit.