1. A magnetic induction device for an integrated circuit, comprising:
a semiconductor substrate;
a conducting coil embedded into a bottom layer of the semiconductor substrate; and
a via embedded into the semiconductor substrate that extends from the bottom layer to a top layer of the semiconductor substrate and that electrically connects the conducting coil and the top layer.
2. The magnetic induction device of claim 1, further comprising one or more integrated circuit (IC) components formed into the top layer of the semiconductor substrate, the via electrically connects the conducting coil with at least a subset of the one or more IC components.
3. The magnetic induction device of claim 2, the magnetic induction device is a monolithic device and the conducting coil, via and one or more IC components are embedded substantially within the semiconductor substrate.
4. The magnetic induction device of claim 1, the conducting coil has a thickness of greater than 50 micrometers (\u03bcm).
5. The magnetic induction device of claim 1, the conducting coil has a thickness of greater than 100 \u03bcm.
6. The magnetic induction device of claim 1, the semiconductor substrate is comprised of silicon.
7. The magnetic induction device of claim 1, further comprising an insulating layer between the conducting coil and an IC component in the top layer or between the conducting coil and the substrate.
8. The magnetic induction device of claim 7, the insulating layer is formed with a complementary metal oxide semiconductor (CMOS) compatible deposition process.
9. The magnetic induction device of claim 1, the conducting coil has a DC resistance of about 100 milliohms or less.
10. The magnetic induction device of claim 1, the conducting coil has a quality factor of about 3.9 at 100 megahertz.
11. The magnetic induction device of claim 1, the via is formed with a batch formation process.
12. The magnetic induction device of claim 1, the via is formed with a plasma etching process.
13. The magnetic induction device of claim 1, the semiconductor substrate having a thickness greater than 200 micrometers (\u03bcm).
14. The magnetic induction device of claim 1, the semiconductor substrate having an area about 1 square millimeter or less.
15. The magnetic induction device of claim 1, having an inductor efficiency of about 90 percent or greater.
16. The magnetic induction device of claim 1, the conducting coil having a current capacity of at least about 0.5 amps.
17. The magnetic induction device of claim 1, having no magnetic core.
18. The magnetic induction device of claim 1, having an operating frequency of about 100 megahertz or less.
19. The magnetic induction device of claim 1, the conducting coil comprising copper metal and having:
a radius of about 450 \u03bcm;
7 turns;
a coil thickness of about 200 \u03bcm;
a track width of about 30 \u03bcm;
a track spacing between coil turns of about 15 \u03bcm; and
a width of the via of about 10 \u03bcm.
20. The magnetic induction device of claim 19, having a DC resistance of about 87 milliohms at an operating current of about 100 milliamps, and a DC resistance of about 96 milliohms at an operating current of about 2 amps.
21. The magnetic induction device of claim 1, the conducting coil comprising copper metal and having:
a coil thickness of about 100 \u03bcm;
a track width of about 15 \u03bcm;
a track spacing between coil turns of about 10 \u03bcm; and
a width of the via of about 30 \u03bcm.
22. The magnetic induction device of claim 21, the conducting coil further having:
a radius of about 330 \u03bcm; and
2 turns.
23. The magnetic induction device of claim 22, having primary DC resistance of about 105 milliohms and secondary DC resistance of about 110 milliohms.
24. The magnetic induction device of claim 21, the conducting coil further having:
a radius of about 700 \u03bcm; and
5 turns.
25. The magnetic induction device of claim 24, wherein the magnetic induction device is a two-phase coupled inductor or a monolithic transformer having primary DC resistance of about 0.44 ohms and secondary DC resistance of about 0.45 ohms.
26. The magnetic induction device of claim 24, wherein the magnetic induction device is a multi-coil monolithic transformer having a coil inductance greater than about 30 nanohenries (nH) and a voltage gain greater than about \u22120.8 decibels (dB) for an operating frequency between about 12 megahertz (MHz) and about 100 MHz.
27. A method of fabricating a monolithic magnetic induction device, comprising:
embedding a copper coil within a lower portion of a silicon semiconductor substrate, the copper coil having a thickness of about 50 \u03bcm or greater;
opening a set of conducting vias within an upper portion of the silicon semiconductor substrate; and
electrically connecting the set of conducting vias and the copper coil thereby providing electrical connectivity between the lower portion and the upper portion of the silicon semiconductor substrate.
28. The method of claim 27, wherein opening the set of conducting vias further comprises utilizing a batch process for opening the set of conducting vias.
29. The method of claim 28, further comprising employing a plasma etching process as the batch process.
30. The method of claim 27, further comprising forming an integrated circuit (IC) component in the upper portion of the silicon semiconductor substrate.
31. The method of claim 30, further comprising electrically connecting the IC component at least in part to a subset of the set of conducting vias.
32. The method of claim 31, wherein forming the IC component at least in part comprises overlapping the IC component above the copper coil in a cross-section.
33. The method of claim 27, wherein embedding the copper coil further comprises forming a coil having between 2 and 7 turns and a radius between about 450 and 700 \u03bcm.
34. The method of claim 27, wherein embedding the copper coil further comprises forming a coil having a track width between about 15 and about 30 \u03bcm.
35. The method of claim 27, wherein embedding the copper coil further comprises forming a coil having a track spacing between about 10 and about 15 \u03bcm.
36. The method of claim 27, wherein embedding the copper coil further comprising forming a coil having a thickness between about 100 \u03bcm and about 200 \u03bcm.
37. The method of claim 27, wherein opening the set of conducting vias further comprises forming vias that are between about 10 and about 30 \u03bcm in width.
38. The method of claim 27, further comprising providing a silicon semiconductor substrate for the monolithic magnetic induction device that is about 315 \u03bcm in thickness.
39. The method of claim 27, further comprising providing a silicon semiconductor substrate for the monolithic magnetic induction device that is about 1 mm squared in area or less.
40. A monolithic magnetic induction device, comprising:
a silicon substrate having a thickness of at least 300 \u03bcm, a surface area of about 1 square millimeter or less, a wafer resistivity of greater than about 6 ohm-centimeters and an isolation thickness of about 3 \u03bcm or greater;
a copper coil embedded into a bottom layer of the silicon substrate having a thickness greater than about 50 \u03bcm, a radius of less than about 700 \u03bcm, a track width below about 30 \u03bcm, a track spacing below about 15 \u03bcm and between 2 and about 7 turns;
an integrated circuit (IC) component formed in a second layer of the silicon substrate that is above the bottom layer; and
at least one via opened in the second layer of the silicon substrate that electrically connects at least a part of the IC component and at least a part of the copper coil.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fluid delivery system comprising:
a syringe; and
a pressure isolation mechanism in fluid connection with the syringe, the pressure isolation mechanism comprising a lumen, an isolation port in fluid connection with the lumen, and a valve having a first state and a second state, the first state occurring when the lumen and the isolation port are connected, the second state occurring when the lumen and the isolation port are disconnected, the lumen being open for flow of fluid therethrough in the first state and in the second state, the valve being normally in the first state and being switchable to the second state when fluid pressure in the lumen reaches a predetermined pressure level;
an actuator adapted to control the state of the valve; and
a pressure transducer in fluid connection with the isolation port of the pressure isolation, mechanism and in communication with the actuator.
2. The fluid delivery system of claim 1 wherein the syringe is a hand-held syringe.
3. The fluid delivery system of claim 1, further comprising a second port in fluid communication with the lumen.
4. The fluid delivery system of claim 1, further comprising second and third ports in fluid communication with the lumen.
5. A fluid delivery system comprising:
a syringe; and
a pressure isolation mechanism in fluid communication with the syringe, the pressure isolation mechanism comprising:
a lumen;
an isolation port;
a second port;
a first valve operably disposed between the lumen and the isolation port; and
a second valve operably disposed between the second port and the lumen, the first valve having a first state wherein the lumen and the isolation port are in fluid communication and a second state wherein the lumen and the isolation port are not in fluid communication, the lumen being open for flow of fluid therethrough in the first state and in the second state, the first valve being spring-biased in the first state and being switchable to the second state when fluid pressure in the lumen reaches a predetermined pressure level.
6. The fluid delivery system of claim 5 wherein the syringe is a hand-held syringe.
7. The fluid delivery system of claim 5, further comprising a port in fluid communication with the lumen.
8. The fluid delivery system of claim 5, further comprising a pressure transducer in fluid communication with the isolation port.
9. The fluid delivery system of claim 3, further comprising a second valve operably disposed between the second port and the lumen.