1. A stitching teach device for teaching muscle memory to a user of a quilting machine, the stitching teach device comprising:
a display device;
a docking device sized and configured for releasably engaging said display device, said docking device further comprising one or more optical sensors on a rear portion thereof for detecting the position of said docking device on a surface; and
a software application stored within an electronic memory of said display device, said software application performing the steps of:
determining the relative position and location of said docking device on a surface via said one or more optical sensors moving on said surface; and
recreating the relative position and location of said docking device on a screen of said display device relative to a virtual pattern.
2. The stitching teach device of claim 1, wherein the docking device includes one or more handles for guiding the stitching teach device.
3. The stitching teach device of claim 1, wherein the display device is in communication with a computerized stitcher.
4. The stitching teach device of claim 3, wherein the display device is in communication with the computerized stitcher via a wireless connection.
5. The stitching teach device of claim 1, wherein the display device includes an electronic memory operable for storing various pantograph patterns thereon.
6. The stitching teach device of claim 2, wherein the one or more handles include a plurality of user input buttons for controlling various stitching settings.
7. The stitching teach device of claim 1, wherein the display device is a tablet.
8. The stitching teach device of claim 1, wherein the display device includes an accelerometer for detecting movement of the display device.
9. The stitching teach device of claim 3, wherein the computerized stitcher recreates the movements of the teach device relative to a pantograph pattern on a quilt.
10. A stitching teach device for teaching muscle memory to a user of a quilting machine, the stitching teach device comprising:
a display device comprising an accelerometer;
a software application stored within an electronic memory of said display device, said software application performing the steps of:
determining the relative position and location of said display device on a surface via said accelerometer moving on said surface; and
recreating the relative position and location of said docking device on a screen of said display device relative to a virtual pattern.
11. The stitching teach device of claim 10, wherein the display device is in communication with a computerized stitcher.
12. The stitching teach device of claim 11, wherein the display device and the computerized stitcher are in communication via a wireless connection.
13. The stitching teach device of claim 10, wherein the stitching teach device further includes a docking device sized and configured for releasably engaging the display device
14. The stitching teach device of claim 13, wherein the docking device includes one or more handles for guiding the stitching teach device.
15. The stitching teach device of claim 14, wherein the docking device includes one or more optical sensors for detecting movement of the display device.
16. The stitching teach device of claim 15, wherein the one or more optical sensors are in communication with the software application of the display device.
17. The stitching teach device of claim 10, wherein the display device is a tablet.
18. The stitching teach device of claim 10, wherein the display device includes a memory operable for storing various pantograph patterns thereon.
19. The stitching teach device of claim 11, wherein the computerized stitcher recreates the movements of the display device relative to a pantograph pattern on a quilt.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
forming a plurality of photodiodes and transistors with a constant interval in a semiconductor substrate;
forming a first interlayer insulating layer over the semiconductor substrate;
forming a plurality of metal lines over the first interlayer insulating layer electrically connected to a respective one of the photodiodes and a respective one of the transistors;
forming a plurality of interlayer insulating layers including an upper interlayer insulating layer and a lower interlayer insulating layer whose refractive indexes are different from each other over the semiconductor substrate including the metal lines;
forming a plurality of color filters over the plurality of interlayer insulating layers such that the color filters correspond to the photodiodes, respectively;
forming a planarization layer over the semiconductor substrate including the color filters; and then
forming a plurality of microlenses over the planarization layer such that the microlenses correspond to the color filters, respectively,
wherein the plurality of interlayer insulating layers comprise an upper interlayer insulating layer having a smaller refractive index than that of a lower interlayer insulating layer.
2. The method of claim 1, wherein the plurality of interlayer insulating layers are formed by controlling an amount of a polymer active agent added thereto.
3. The method of claim 2, wherein the polymer active agent comprises at least one of silesquioxane and polysiloxane.
4. A method comprising:
forming an epitaxial layer over a semiconductor substrate having photodiode regions, transistor regions, and device isolation regions;
forming a first interlayer insulating layer composed of a silane-based material over the semiconductor substrate including the epitaxial layer;
forming a plurality of metal lines over the first interlayer insulating layer;
forming an insulating layer over the semiconductor substrate including the first interlayer insulating layer and the metal lines;
forming a second interlayer insulating layer over the semiconductor substrate including the insulating layer;
controlling the refractive index of the second interlayer insulating layer such that the refractive index differs from the refractive index of layers formed under the second interlayer insulating layer;
forming a color filter layer over the second interlayer insulating layer;
forming a planarization layer having a thickness of between approximately 1000-6000 \u212b over the semiconductor substrate including the color filter layer; and then forming a plurality of microlenses corresponding to the color filter over the planarization layer.
5. The method of claim 4, wherein the epitaxial layer is composed of a low concentration p-type conduction material.
6. The method of claim 4, wherein the second interlayer insulating layer has a thickness of between approximately 3000-4000 \u212b.
7. An apparatus comprising:
a plurality of photodiodes and a plurality of transistors formed in a semiconductor substrate;
a first interlayer insulating layer formed over the semiconductor substrate;
a plurality of metal lines formed over the first interlayer insulating layer, electrically connected with the photodiodes and the transistors;
a plurality of interlayer insulating layers including an upper interlayer insulating layer and a lower interlayer insulating layer formed over the semiconductor substrate including the metal lines, wherein refractive indexes of the upper interlayer insulating layer and the lower interlayer insulating layer are different from each other;
a plurality of color filters formed over the plurality of interlayer insulating layers and which correspond to the photodiodes, respectively;
a planarization layer formed over the semiconductor substrate including the color filters; and
a plurality of microlenses formed over the planarization layer and which corresponds to the color filters, respectively,
wherein the upper interlayer insulating layer has a smaller refractive index than that of the lower interlayer insulating layer.
8. The apparatus of claim 7, wherein the plurality of interlayer insulating layers are formed by controlling an amount of a polymer active agent added thereto.
9. The apparatus of claim 8, wherein the polymer active agent comprises at least one of silesquioxane and polysiloxane.