1. A method of performing RTL (register-transfer level) testability analysis for checking scan rule violations in an integrated circuit modeled at RTL, the integrated circuit having a plurality of clock domains and each domain having one scan clock; said method comprising the computer-implemented steps of:
(a) compiling the HDL (hardware description language) code that represents said integrated circuit at RTL into a design database;
(b) receiving scan constraints from an external source, said scan constraints further comprising a list of scan clocks; and
(c) based on said scan constraints, analyzing said design database and reporting all said scan rule violations including one or more of the following: generated setreset signals, destructive setreset signals, combinational gated setreset signals, sequential gated setreset signals, potential bus contention on tri-state busses, generated clocks, constant clocks, clocks connected to data inputs of storage elements, combinational gated clocks, sequential gated clocks, pulse generators, and potential combinational feedback loops.
2-15. (canceled)
16-25. (canceled)
26. A method of performing scan extraction for extracting scan cells from a plurality of scan chains in a scan-based integrated circuit modeled at RTL (register-transfer level), the integrated circuit having a plurality of clock domains and each domain having one scan clock; said method comprising the computer-implemented steps of:
(a) compiling the scan-based HDL (hardware description language) code that represents said integrated circuit at RTL into a design database;
(b) receiving scan constraints from an external source, said scan constraints further comprising a scan in port and a scan out port for each said scan chain; and
(c) extracting said scan cells from each said scan chain according to said scan in port and said scan out port specified in said scan constraints.
27. The method of claim 26, wherein said extracting said scan cells from each said scan chain further comprises the computer-implemented steps of:
(d) setting selected scan enable (SE) signals to predetermined logic values to enable shifting of said scan chain;
(e) performing topological search, simulation, or a combination of both to generate an ordered list of said scan cells from each said scan chain; and
(f) reporting broken scan cells within each said broken scan chain where scan extraction fails.
28. A method of performing interactive scan debug for locating broken scan cells within each broken scan chain in a scan-based integrated circuit modeled at RTL (register-transfer level), the integrated circuit having a plurality of clock domains and each domain having one scan clock; said method comprising the computer-implemented steps of:
(a) compiling the scan-based HDL (hardware description language) code that represents said integrated circuit at RTL into a design database;
(b) receiving scan constraints from an external source, said scan constraints further comprising a scan in port and a scan out port for each said scan chain;
(c) setting selected scan enable (SE) signals to predetermined logic values to enable shifting of said broken scan chain; and
(d) performing simulation to locate said broken scan cells one by one within each said broken scan chain.
29. The method of claim 28, wherein said performing simulation to locate said broken scan cells one by one within each said broken scan chain further comprises interactively tracing said broken scan cells one by one by displaying their respective signal values on a computer.
30. The method of claim 28, wherein said performing simulation to locate said broken scan cells one by one within each said broken scan chain further comprises applying selected test patterns and interactively forcing logic values of 0’s or 1’s to any internal signal to repair said broken scan cells and recording said internal signals and their forced values, called broken control points, for interactive scan repair.
31. The method of claim 28, wherein said performing simulation to locate said broken scan cells one by one within each said broken scan chain further comprises applying selected test patterns and interactively highlighting selected RTL codes and signals been traced and fixed on a schematic viewer, HDL code viewer, or a waveform viewer.
32. A method of performing interactive scan repair for repairing broken scan cells within each broken scan chain in a scan-based integrated circuit modeled at RTL (register-transfer level), the integrated circuit having a plurality of clock domains and each domain having one scan clock; said method comprising the computer-implemented steps of:
(a) compiling the scan-based HDL (hardware description language) code that represents said integrated circuit at RTL into a design database;
(b) receiving scan constraints from an external source, said scan constraints further comprising selected broken control points to be repaired;
(c) repairing said selected broken control points within each said broken scan chain according to said scan constraints; and
(d) generating the scan-repaired HDL code at RTL.
33. The method of claim 32, wherein said repairing said selected broken control points within each said broken scan chain further comprises interactively guiding designers to select said scan-repaired HDL code for repairing each said selected broken control point on said design database.
34. The method of claim 32, wherein said repairing said selected broken control points within each said broken scan chain further comprises making a plurality of interactive repair suggestions and repairing each said selected broken control point according to a selected said repair suggestion.
35. The method of claim 32, wherein said repairing said selected broken control points within each said broken scan chain further comprises interactively highlighting selected RTL codes and said selected broken control points been repaired on a schematic viewer, HDL code viewer, or a waveform viewer.
36-104. (canceled)
105. The method of claim 1, wherein said scan constraints further comprising a list of scan clocks further including analyzing said database based on said scan constraints for generating an optimal number of scan clocks by identifying which selected clock domains do not interact with each other, and when said selected clock domains do not interact with each other, selectively replacing said scan clocks controlling said selected clock domains with one or more grouped scan clocks each for testing a plurality of said selected clock domains at the same frequency concurrently.
106. The method of claim 105, further comprising selectively specifying said optimal number of scan clocks in one-hot mode, non-overlapping mode, or overlapping mode.
107. The method of claim 1, wherein said scan constraints further comprising a list of scan clocks further comprise analyzing said design database based on said scan constraints for generating an optimal ordered sequence of scan clocks by:
(d) identifying which selected clock domains do not interact with each other, and when said selected clock domains do not interact with each other, selectively replacing said scan clocks controlling said selected clock domains with one or more grouped scan clocks each for testing a plurality of said selected clock domains at the same frequency concurrently; and
(e) based on said scan constraints and said grouped scan clocks, further analyzing said design database to search for said optimal ordered sequence of scan clocks using the least amount of near-minimal amount of computer memory when transforming said design database into an equivalent combinational circuit model.
108. The method of claim 107, wherein said using the least amount of near-minimal amount of computer memory when transforming said design database into an equivalent combinational circuit model further comprises estimating the memory usage of each said clock domain and the memory usage of each crossing clock-domain logic block within each time frame in said equivalent combinational circuit model.
109. The method of claim 107, further comprising selectively specifying said optimal ordered sequence of scan clocks in one-hot mode, non-overlapping mode, or overlapping mode.
110. The method of claim 1, wherein said scan constraints further comprising a list of scan clocks further includes analyzing said design database based on said scan constraints for selecting a plurality of storage elements to improve the testability of said integrated circuit modeled at RTL by:
(f) specifying a list of scan clocks and a list of modules to be included and excluded for scan selection;
(g) based on said scan constraints and said lists, analyzing said design database and selecting said storage elements within each said clock domain which are directly controllable by one said scan clock; and
(h) organizing all selected storage elements within all said clock domains into a plurality of scan chains.
111. The method of claim 110, wherein said storage element is a flip-flop or a latch.
112. The method of claim 110, wherein said selecting said storage elements within each said clock domain further comprises selecting said storage elements according to a selected sequential cell-depth specified in said scan constraints.
113. The method of claim 110, wherein said selecting said storage elements within each said clock domain further comprises sorting and ordering said storage elements by module names followed by instance names within each said clock domain.
114. The method of claim 110, wherein said organizing all selected storage elements within all said clock domains into a plurality of scan chains further comprises splitting said selected storage elements within a selected clock domain into two or more said scan chains according to said scan constraints.
115. The method of claim 110, wherein said organizing all selected storage elements within all said clock domains into a plurality of scan chains further comprises merging said selected storage elements within a plurality of selected clock domains into one said scan chain according to said scan constraints.
116. The method of claim 110, further comprising analyzing said design database and reporting all storage elements within each said clock domain which are not directly controllable by any said scan clock; wherein said storage elements are candidates for scan repair and scan insertion.
17. The method of claim 1, wherein said scan constraints further comprising a list of scan clocks further including analyzing said design database based on said scan constraints for selecting a plurality of test points to improve the testability of said integrated circuit modeled at RTL by:
(i) specifying a number of test points to be selected; and
(j) based on said scan constraints and said number of test points to be selected, analyzing said design database and selecting said test points.
118. The method of claim 117, wherein said selecting said test points within each said clock domain further comprises interactively guiding designers to select said test points according to testability measures or fault coverage estimates on a list of test point candidates; wherein each said test point is selectively a control point including an AND gate, an OR gate, a multiplexer or an XOR gate, an observation point including a new storage element, or an XOR gate coupled to a selected storage element or a selected primary output, or a scan point including a multiplexer coupled to a new storage element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. An amide of the formula (I) or a salt thereof
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where the symbols and indices are as defined below:
x is CH or N;
Y is O or S;
n is 0 or 1;
R1 is (C1-C4)-haloalkyl;
R2, R3 independently of one another are hydrogen, (C1-C4)-alkyl, (C1-C4)-haloalkyl or halogen,
R4 is hydrogen, (C1-C10)-alkyl, (C3-C10)-cycloalkyl, (C3-C10)-alkenyl or (C3-C10)-alkynyl, where the alkyl, cycloalkyl, alkenyl or alkynyl groups are unsubstituted or substituted by up to three halogen atoms, in the case of fluorine also up to the maximum number;
R5 is an aliphatic heterocycle which contains at least one oxygen, sulfur, nitrogen andor silicon ring atom, which is unsubstituted or substituted by one to six monovalent groups and which may be part of a spirocyclic, fused or bicyclic ring system.
2. An amide of the formula (I) or a salt thereof as claimed in claim 1, where R5 is a four- to eight-membered aliphatic heterocycle which contains one oxygen ring atom, one sulfur ring atom, one nitrogen atom, one silicon ring atom, two oxygen ring atoms or two sulfur ring atoms, where the sulfur ring atoms are present in the form S(O)p and p is 0, 1 or 2.
3. An amide of the formula (I) or a salt thereof as claimed in claim 1, where R5 is a heteroaliphatic radical of the formula (II)
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in which A andor B isare at least one oxygen, sulfur, nitrogen or silicon ring atom and the ring may additionally contain one or two carbonyl groups which, together with the hetero units, may form a lactone, lactam or imide unit; and where, if A is oxygen and B is nitrogen, these units may be directly adjacent and where in all other cases in which A and B are heteroatom units these must be separated by at least one saturated carbon unit;
m is 0 or 1 to 6;
R6 are, depending on m, identical or different and are each (C1-C10)-alkyl, (C2-C10)-alkenyl, (C2-C10)-alkynyl, (C3-C10)-cycloalkyl, (C4-C10)-cycloalkenyl or (C8-C10)-cycloalkynyl which is unsubstituted or substituted by one or more identical or different radicals, or isare a radical R7, where
R7 is halogen, cyano, nitro, hydroxyl, thio, amino, (C1-C10)-alkanoyl, (C3-C10)-alkenoyl, (C3-C10)-alkynoyl, (C3-C10)-cycloalkanoyl, (C1-C10)-alkoxy, (C3-C10)-alkenyloxy, (C3-C10)-alkynyloxy, (C3-C10)-cycloalkoxy, (C4-C10)-cycloalkenyloxy, (C3-C8)-cycloalkyl-(C1-C4)-alkoxy, (C4-C8)-cycloalkenyl-(C1-C4)-alkoxy, (C3-C8)-cycloalkyl-(C3-C4)-alkenyloxy, (C4-C8)-cycloalkenyl-(C3-C4)-alkenyloxy, (C1-C4)-alkyl-(C3-C8)-cycloalkoxy, (C2-C4)-alkenyl-(C3-C8)-cycloalkoxy, (C2-C4)-alkynyl-(C3-C8)-cycloalkoxy, (C1-C4)-alkyl-(C4-C8)-cycloalkenyloxy, (C2-C4)-alkenyl-(C4-C8)-cycloalkenyloxy, (C1-C4)-alkoxy-(C1-C4)-alkoxy, (C1-C4)-alkoxy-(C3-C4)-alkenyloxy, carbamoyl, (C1-C8)-mono- or -dialkylcarbamoyl, (C3-C8)-mono- or -dicycloalkylcarbamoyl, (C1-C8)-alkoxycarbonyl, (C3-C8)-cycloalkoxycarbonyl, (C1-C8)-alkanoyloxy, (C3-C8)-cycloalkanoyloxy, (C1-C8)-alkanoylamino, (C3-C8)-alkenoylamino, (C3-C8)-cycloalkanoylamino, (C3-C8)-cycloalkyl-(C1-C4)-alkanoylamino, the N-(C1-C4)-alkylamino analogs of the four last-mentioned radicals, (C1-C10)-alkylthio, (C3-C10)-alkenylthio, (C3-C10)-alkynylthio, (C3-C8)-cycloalkylthio, (C4-C8)-cycloalkenylthio, (C3-C8)-cycloalkyl-(C1-C4)-alkylthio, (C4-C8)-cycloalkenyl-(C1-C4)-alkylthio, (C3-C8)-cycloalkyl-(C3-C4)-alkenylthio, (C4-C8)-cycloalkenyl-(C3-C4)-alkenylthio, (C1-C4)-alkyl-(C3-C8)-cycloalkylthio, (C2-C4)-alkenyl-(C3-C8)-cycloalkylthio, (C2-C4)-alkynyl-(C3-C8)-cycloalkylthio, (C1-C8)-alkyl-(C4-C8)-cycloalkenylthio, (C2-C6)-alkenyl-(C4-C8)-cycloalkenylthio, (C1-C10)-alkylsulfinyl, (C3-C4)-alkenylsulfinyl, (C3-C4)-alkynylsulfinyl, (C3-C10)-cycloalkylsulfinyl, (C4-C10)-cycloalkenylsulfinyl, (C3-C8)-cycloalkyl-(C1-C4)-alkylsulfinyl, (C4-C8)-cycloalkenyl-(C1-C4)-alkylsulfinyl, (C3-C8)-cycloalkyl-(C3-C4)-alkenylsulfinyl, (C4-C8)-cycloalkenyl-(C3-C4)-alkenylsulfinyl, (C1-C4)-alkyl-(C3-C8)-cycloalkylsulfinyl, (C2-C4)-alkenyl-(C3-C8)-cycloalkylsulfinyl, (C2-C4)-alkynyl-(C3-C8)-cycloalkylsulfinyl, (C1-C4)-alkyl-(C4-C8)-cycloalkenylsulfinyl, (C2-C3)-alkenyl-(C4-C8)-cycloalkenylsulfinyl, (C1-C10)-alkylsulfonyl, (C3-C10)-alkenylsulfonyl, (C3-C10)-alkynylsulfonyl, (C3-C10)-cycloalkylsulfonyl, (C4-C10)-cycloalkenylsulfonyl, (C3-C8)-cycloalkyl-(C1-C4)-alkylsulfonyl, (C4-C8)-cycloalkenyl-(C1-C4)-alkylsulfonyl, (C3-C8)-cycloalkyl-(C3-C4)-alkenylsulfonyl, (C4-C8)-cycloalkenyl-(C3-C4)-alkenylsulfonyl, (C1-C4)-alkyl-(C3-C8)-cycloalkylsulfonyl, (C2-C4)-alkenyl-(C3-C8)-cycloalkylsulfonyl, (C3-C6)-alkynyl-(C3-C8)-cycloalkylsulfonyl, (C1-C4)-alkyl-(C4-C8)-cycloalkenylsulfonyl, (C3-C4)-alkenyl-(C4-C8)-cycloalkenylsulfonyl, (C1-C10)-alkylamino, (C3-C10)-alkenylamino, (C3-C10)-alkynylamino, (C3-C8)-cycloalkylamino, (C4-C8)-cycloalkenylamino, (C3-C8)-cycloalkyl-(C1-C4)-alkylamino, (C4-C8)-cycloalkenyl-(C1-C4)-alkylamino, (C3-C8)-cycloalkyl-(C3-C4)-alkenylamino, (C4-C8)-cycloalkenyl-(C3-C4)-alkenylamino, (C1-C4)-alkyl-(C3-C8)-cycloalkylamino, (C2-C4)-alkenyl-(C3-C8)-cycloalkylamino, (C2-C4)-alkynyl-(C3-C8)-cycloalkylamino, (C1-C4)-alkyl-(C4-C8)-cycloalkenylamino, (C2-C4)-alkenyl-(C4-C8)-cycloalkenylamino, the N-(C1-C4)-alkylamino analogs of the fourteen last-mentioned radicals, (C1-C10)-trialkylsilyl, aryl, aroyl, heterocyclylcarbonyl, aryloxy, arylthio, arylamino, N-(C1-C4)-alkyl-arylamino, the N-(C1-C4)-alkylamino analogs of the two last-mentioned radicals, aryl-(C1-C4)-alkoxy, aryl-(C3-C4)-alkenyloxy, aryl-(C1-C4)-alkylthio, aryl-(C3-C4)-alkenylthio, aryl-(C1-C4)-alkylamino, aryl-(C3-C4)-alkenylamino, the N-(C1-C4)-alkylamino analog of the last-mentioned radical, aryl-(C1-C8)-dialkylsilyl, diaryl-(C1-C8)-alkylsilyl, triarylsilyl, heterocyclyl, heterocyclyloxy, heterocyclylthio or heterocyclylamino, where the cyclic moiety of the aryl or heterocyclyl radicals mentioned is unsubstituted or substituted by one or more radicals selected from the group consisting of halogen, cyano, nitro, amino, hydroxyl, thio, (C1-C4)-alkyl, (C1-C4)-haloalkyl, (C3-C8)-cycloalkyl, (C1-C4)-alkoxy, (C1-C4)-haloalkoxy, (C1-C4)-alkylthio, (C1-C4)-haloalkylthio, (C1-C4)-alkylamino, (C1-C4)-dialkylamino, trimethylsilyl and (C1-C4)-alkanoyl;
where, if appropriate, two alkyl radicals R6 attached to the same carbon atom may form, together with this carbon atom, a spirocyclic ring system, or
where, if appropriate, two alkyl radicals R6 attached to different carbon atoms may, together with the aliphatic heterocycle of the formula (II), form a fused or bicyclic ring system or furthermore the heteroaliphatic ring system of the formula (II) and an additional aryl or heteroaryl system together may form a fused ring system;
and where, if R6 is (C1-C10)-alkyl, (C2-C10)-alkenyl, (C2-C10)-alkynyl, (C3-C10)-cycloalkyl, (C4-C10)-cycloalkenyl oder (C8-C10)-cycloalkynyl, the radicals mentioned may be unsubstituted or mono- or polysubstituted by radicals R11, where
R11 has the meanings given above for R7, and all groups mentioned for R6, R7 and R11, are unsubstituted or substituted by up to three halogen atoms, in the case of fluorine also up to the maximum number.
4. An amide of the formula (I) or a salt thereof as claimed in claim 3, where A andor B are at least one O, S(O)0,1,2, NR8 or SiR9R10 ring atoms, where R8 is hydrogen, (C1-C10)-alkyl, (C3-C10)-alkenyl, (C3-C10)-alkynyl, (C3-C10)-cycloalkyl, (C4-C10)-cycloalkenyl, aryl, heterocyclyl, (C1-C10)-alkanoyl, (C3-C10)-alkenoyl, (C3-C10)-alkynoyl, (C4-C8)-cycloalkanoyl, aroyl, heterocyclylcarbonyl, carbamoyl, (C1-C6)-mono- or -dialkylcarbamoyl, (C3-C10)-mono- or -dicycloalkylcarbamoyl, (C1-C10)-alkoxycarbonyl, (C3-C10)-cycloalkoxycarbonyl, (C1-C10)-alkylsulfonyl, (C3-C10)-alkenylsulfonyl, (C3-C6)-alkynylsulfonyl, (C3-C10)-cycloalkylsulfonyl, (C4-C10)-cycloalkenylsulfonyl, (C3-C10)-cycloalkyl-(C1-C10)-alkylsulfonyl, (C4-C8)-cycloalkenyl-(C1-C4)-alkylsulfonyl, (C3-C8)-cycloalkyl-(C3-C4)-alkenylsulfonyl, (C4-C8)-cycloalkenyl-(C3-C4)-alkenylsulfonyl, (C1-C4)-alkyl-(C3-C8)-cycloalkylsulfonyl, (C2-C4)-alkenyl-(C3-C8)-cycloalkylsulfonyl, (C2-C4)-alkynyl-(C3-C8)-cycloalkylsulfonyl, (C1-C4)-alkyl-(C4-C8)-cycloalkenylsulfonyl, (C2-C4)-alkenyl-(C4-C8)-cycloalkenylsulfonyl, hydroxyl, (C1-C10)-alkoxy, (C3-C10)-alkenyloxy, (C3-C10)-alkynyloxy, (C3-C10)-cycloalkoxy, (C4-C10)-cycloalkenyloxy, (C3-C8)-cycloalkyl-(C1-C4)-alkoxy, (C4-C8)-cycloalkenyl-(C1-C4)-alkoxy, (C3-C8)-cycloalkyl-(C3-C4)-alkenyloxy, (C4-C8)-cycloalkenyl-(C3-C4)-alkenyloxy, (C1-C4)-alkyl-(C3-C8)-cycloalkoxy, (C2-C4)-alkenyl-(C3-C8)-cycloalkoxy, (C2-C4)-alkynyl-(C3-C8)-cycloalkoxy, (C1-C4)-alkyl-(C4-C8)-cycloalkenyloxy, (C2-C4)-alkenyl-(C4-C8)-cycloalkenyloxy, (C1-C4)-alkoxy-(C1-C4)-alkoxy, (C1-C4)-alkoxy-(C3-C4)-alkenyloxy, aryloxy, aryl-(C1-C10)-alkoxy, aryl-(C3-C10)-alkenyloxy or aryl-(C3-C10)-alkynyloxy and where the radicals mentioned above for R8 may be unsubstituted or substituted by one or more radicals selected form the group consisting of cyano, nitro, amino, hydroxyl, thio, (C1-C4)-alkyl, (C3-C10)-cycloalkyl, (C1-C4)-alkoxy, (C1-C4)-alkylthio, (C1-C4)-alkylamino or (C1-C4)-alkanoyl;
R9 and R10 are (C1-C10)-alkyl, (C2-C10)-alkenyl, (C2-C10)-alkynyl, (C3-C10)-cycloalkyl, (C4-C10)-cycloalkenyl, (C8-C10)-cycloalkynyl, aryl, aryl-(C1-C4)-alkyl or heterocyclyl, and where in all groups mentioned for R8, R9 and R10 are unsubstituted or substituted by one to three halogen atoms, in the case of fluorine also up to the maximum number.
5. An amide of the formula (I) or a salt thereof as claimed in claim 3, where R5 is a five- to seven-membered aliphatic heterocycle of the formula (II) having one or two heteroatom units A andor B and additionally one carbonyl group in the ring, which carbonyl group, together with the hetero unit(s), forms a lactone or lactam unit.
6. An amide of the formula (I) or a salt thereof as claimed in claim 3, where R6 is (C1-C10)-alkyl, (C2-C10)-alkenyl, (C2-C10)-alkynyl, (C3-C10)-cycloalkyl, (C4-C10)-cycloalkenyl or (C8-C10)-cycloalkynyl and the radicals mentioned are unsubstituted or mono- or polysubstituted by radicals R11, where R11 has one of the meanings mentioned in claim 3.
7. An amide of the formula (I) or a salt thereof as claimed in claim 3 where R7 is selected from the group consisting of aryl, aroyl, heterocyclylcarbonyl, aryloxy, arylthio, arylamino, N-(C1-C4)-alkyl-arylamino, the N-(C1-C4)-alkylamino analogs of the two last-mentioned radicals, aryl-(C1-C4)-alkoxy, aryl-(C3-C4)-alkenyloxy, aryl-(C1-C4)-alkylthio, aryl-(C3-C4)-alkenylthio, aryl-(C1-C4)-alkylamino, aryl-(C3-C4)-alkenylamino, the N-(C1-C4)-alkylamino analog of the last-mentioned radical, aryl-(C1-C8)-dialkylsilyl, diaryl-(C1-C8)-alkylsilyl, triarylsilyl, heterocyclyl, heterocyclyloxy, heterocyclylthio and heterocyclylamino, where the cyclic moiety of the aryl or heterocyclyl radicals mentioned is unsubstituted or substituted by one or more radicals selected from the group consisting of halogen, cyano, nitro, amino, hydroxyl, thio, (C1-C4)-alkyl, (C1-C4)-haloalkyl, (C3-C8)-cycloalkyl, (C1-C4)-alkoxy, (C1-C4)-alkylthio, (C1-C4)-alkylamino and (C1-C4)-alkanoyl.
8. An amide of the formula (I) or a salt thereof as claimed in claim 1 where X is CH, Y is O and n is 0.
9. An amide of the formula (I) or a salt thereof as claimed in claim 1 where R1 is (C1-C4)-alkyl which is mono- or polysubstituted by F andor Cl.
10. An amide of the formula (I) or a salt thereof as claimed in claim 9 where R1 is CF3, CHF2 or CF2Cl.
11. An amide of the formula (I) or a salt thereof as claimed in claim 10 where R1 is CF3.
12. An anide of the formula (I) or a salt thereof as claimed in claim 1 where R2, R3 and R4 are hydrogen.
13. An amide of the formula (I) or a salt thereof as claimed in claim 1 where R6 is hydrogen or (1-C4)-alkyl.
14. A process for preparing an amide of the formula (I) or a salt thereof as claimed in claim 1, which comprises reacting a carboxylic acid of the formula (III),
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in which X, R1, R2, R3 and n have the meanings given in claim 1, in the form of an activated derivative of this acid in the presence of a base with a compound of the formula (IV) in which R4 and R5 have the meanings given in claim 1
HNR4R5(IV).
15. A composition having insecticidal, acaricidal, ixodicidal, nematicidal, molluscicidal andor fungicidal action, which comprises at least one compound of the formula (I) or a salt thereof as claimed in claim 1.
16. The composition as claimed in claim 15 in a mixture with carriers andor surfactants.
17. A pharmaceutical for use in humans andor animals comprising a compound of the formula (I) or a salt thereof as claimed in claim 1.
18. The pharmaceutical as claimed in claim 17 for controlling endo- andor ectoparasites.
19. A method for controlling harmful insects, acarids andor nematodes which comprises applying an effective amount of a compound of the formula (I) or a salt thereof as claimed in claim 1 to these pests, or to the plants, areas or substrates infested with them.
20. A method for fending off, or warding off, harmful organisms, where one or more compounds of the formula (I) or their salts as claimed in claim 1 are applied to the site from which the harmful organisms are to be fended off or warded off.