1. A method for manufacturing a semiconductor device, comprising:
(a). providing a transparent substrate;
(b). forming a light-shielding layer over the transparent substrate;
(c). forming a first buffer layer on the light-shielding layer;
(d). forming a semiconductor layer on the first buffer layer;
(e). patterning the light-shielding layer, the first buffer layer, and the semiconductor layer to form a laminate pattern;
(f). forming a channel within the semiconductor layer and a sourcedrain region at two sides of the channel;
(g). forming a gate insulating layer over the transparent substrate to cover the laminate pattern; and
(h). forming a gate electrode on the gate insulating layer above the channel.
2. The method of claim 1, wherein step (d) comprises:
(i). forming an amorphous silicon layer on the first buffer layer; and
(j). performing a laser annealing process to transform the amorphous silicon layer into a polysilicon layer.
3. The method of claim 2, wherein the laser annealing process comprises an excimer laser annealing process, a sequential lateral solification process, or a thin beam direction X’rystallization process.
4. The method of claim 1, wherein step (e) comprises performing a wet etching process.
5. The method of claim 1, wherein forming the sourcedrain region in the semiconductor layer comprises performing an ion implantation process to a portion of the semiconductor layer.
6. The method of claim 1, further comprising forming a second buffer layer on the transparent substrate prior to the formation of the light-shielding layer.
7. The method of claim 1, further comprising forming a third buffer layer on the light-shielding layer prior to the formation of the first buffer layer.
8. A semiconductor device, comprising:
a transparent substrate;
a light-shielding layer disposed on the transparent substrate;
a first buffer layer disposed on the light-shielding layer;
a semiconductor layer disposed on the first buffer layer and having a channel and a sourcedrain region at two sides of the channel, wherein the light-shielding layer, the first buffer layer, and the semiconductor layer that have substantially the same pattern form a laminate pattern;
a gate insulating layer disposed over the transparent substrate to cover the laminate pattern; and
a gate electrode disposed on the gate insulating layer above the channel.
9. The device of claim 8, wherein the laminate pattern appears island-like.
10. The device of claim 8, wherein the material used for fabricating the light-shielding layer comprises amorphous silicon, polysilicon, diamond-like carbon, silicon germanium (SiGe), germanium, gallium arsenide (GaAs) molybdenum (Mo), aluminum (Al), chromium (Cr), titanium (Ti), or any combination thereof.
11. The device of claim 8, wherein the light-shielding layer is at least 10 nm thick.
12. The device of claim 11, wherein the thickness of the light-shielding layer is between 50 nm and 300 nm.
13. The device of claim 8, wherein the material used for fabricating the first buffer layer comprises silicon oxide.
14. The device of claim 8, further comprising a second buffer layer disposed between the light-shielding layer and the transparent substrate.
15. The device of claim 14, wherein the material used for fabricating the second buffer layer comprises silicon nitride.
16. The device of claim 8, further comprising a third buffer layer disposed between the first buffer layer and the light-shielding layer.
17. The device of claim 16, wherein the material used for fabricating the third buffer layer comprises silicon nitride.
18. A method for manufacturing a semiconductor device, comprising:
(a). providing a transparent substrate;
(b). forming a light-shielding layer over the transparent substrate;
(c). forming a first buffer layer on the light-shielding layer;
(d). forming a semiconductor layer on the first buffer layer;
(e). patterning the light-shielding layer, the first buffer layer, and the semiconductor layer to form a laminate pattern;
(f). forming an intrinsic region, and a first-type doped region and a second-type doped region at two sides of the intrinsic region within the semiconductor layer;
(g). forming a protection layer on the transparent substrate to cover the laminate pattern, wherein the protection layer comprises a first contact window and a second contact window respectively exposing a portion of the first-type doped region and that of the second-type doped region; and
(h). forming a first contact and a second contact on the protection layer, wherein the first contact is electrically connected to the first-type doped region through the first contact window and the second contact is electrically connected to the second-type doped region through the second contact window.
19. The method of claim 18, wherein step (d) comprises:
(i). forming an amorphous silicon layer on the first buffer layer; and
(j). performing a laser annealing process to transform the amorphous silicon layer into a polysilicon layer.
20. The method of claim 19, wherein the laser annealing process comprises an excimer laser annealing process, a sequential lateral solification process or a thin beam direction X’rystallization process.
21. The method of claim 18, wherein step (e) comprises performing a wet etching process.
22. The method of claim 18, wherein forming the first-type doped region and the second-type doped region in the semiconductor layer comprises respectively performing a P-type doping and an N-type doping to different portions of the semiconductor layer.
23. The method of claim 18, further comprising forming a second buffer layer on the transparent substrate prior to the formation of the light-shielding layer.
24. The method of claim 18, further comprising forming a third buffer layer on the light-shielding layer prior to the formation of the first buffer layer.
25. A semiconductor device, comprising:
a transparent substrate;
a light-shielding layer disposed on the transparent substrate;
a first buffer layer disposed on the light-shielding layer;
a semiconductor layer having an intrinsic region, and a first-type doped region and a second-type doped region at two sides of the intrinsic region disposed on the first buffer layer, wherein the light-shielding layer, the first buffer layer, and the semiconductor that have substantially the same pattern form a laminate pattern;
a protection layer disposed on the transparent electrode to cover the laminate pattern, wherein the protection layer comprises a first contact window and a second contact window respectively exposing a portion of the first-type doped region and that of the second-type doped region; and
a first contact and a second contact disposed on the protection layer, wherein the first contact is electrically connected to the first-type doped region through the first contact window and the second contact is electrically connected to the second-type doped region through the second contact window.
26. The device of claim 25, wherein the laminate pattern appears island-like.
27. The device of claim 25, wherein the material used for fabricating the light-shielding layer comprises amorphous silicon, polysilicon, diamond-like carbon, silicon germanium (SiGe), germanium, gallium arsenide (GaAs) molybdenum (Mo), aluminum (Al), chromium (Cr), titanium (Ti), or a combination thereof.
28. The device of claim 25, wherein the light-shielding layer is at least 10 nm thick.
29. The device of claim 28, wherein the thickness of the light-shielding layer is between 50 nm and 300 nm.
30. The device of claim 25, wherein the material used for fabricating the first buffer layer comprises silicon oxide.
31. The device of claim 25, further comprising a second buffer layer disposed between the light-shielding layer and the transparent substrate.
32. The device of claim 31, wherein the material used for fabricating the second buffer layer comprises silicon nitride.
33. The device of claim 25, further comprising a third buffer layer disposed between the first buffer layer and the light-shielding layer.
34. The device of claim 33, wherein the material used for fabricating the third buffer layer comprises silicon nitride.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. Probes for identifying a target virus species, comprising a first pair of primers comprising a forward degenerate primer and a reverse degenerate primer corresponding to respective first and second highly conserved regions of the target virus; and at least one selected from a second pair of primers comprising at least one primer corresponding to a highly variable sequence between the first and the second highly conserved regions of the target virus, and a species-specific probe comprising one or more highly variable sequences between the first and the second highly conserved regions of the target virus.
2. The probes according to claim 1, wherein the species-specific probe is a species-specific oligonucleotide probe.
3. The probes according to claim 1, wherein the species-specific probe is a species-specific cDNA probe prepared by amplifying the gene sequence of the target virus with the second pair of primers.
4. The probes according to claim 1, wherein the target virus is a potyvirus species.
5. The probes according to claim 4, wherein the first pair of primers comprising
a forward degenerate primer selected from a group consisting of
PNIbF0:
5\u2032AGAGGNAAYAAYAGYGGNCARCC3\u2032,
(SEQ ID NO: 1)
PNIbF1:
5\u2032GGBAAYAATAGTGGNCAACC3\u2032
(SEQ ID NO: 27)
and
PNIbF5:
5\u2032GCCAGCCCTCCACCGTNGTNGAYAA3\u2032,
(SEQ ID NO: 28)
and a reverse degenerate primer comprising
PCPR1:
5\u2032GGGGAGGTGCCGTTCTCDATRCACCA3\u2032,
(SEQ ID NO: 2)
wherein R is adenine (A) or cytosine (C), Y is C or thymine (T), B is C, guanine (G) or T, D is A, G or T, and N is A, C, G or T.
6. The probes according to claim 4, wherein the potyvirus species includes Dasheen mosaic virus (DsMV), Papaya ringspot virus (PRSV), Potato virus A (PVA), Potato virus Y (PVY), Turnip mosaic virus (TuMV), Zantedeschia mosaic virus (ZaMV), Zantedeschia mild mosaic virus (ZaMMV) and Zucchini yellow mosaic virus (ZYMV).
7. The probes according to claim 4 wherein the second pair of primers is selected from a group consisting of
DsMV-F1 of SEQ ID NO: 3, and DsMV-R1 of SEQ ID NO: 11;
PRSV-F1 of SEQ ID NO: 4, and PRSV-R1 of SEQ ID NO: 12;
PVA-F1 of SEQ ID NO: 5, and PVA-R1 of SEQ ID NO: 13;
PVY-F1 of SEQ ID NO: 6, and PVY-R1 of SEQ ID NO: 14;
TuMV-F1 of SEQ ID NO: 7, and TuMV-R1 of SEQ ID NO: 15;
ZaMV-F1 of SEQ ID NO: 8, and ZaMV-R1 of SEQ ID NO: 16;
ZaMMV-F1 of SEQ ID NO: 9, and ZaMMV-R1 of SEQ ID NO: 17; and
ZYMV-F1 of SEQ ID NO: 10 and ZYMV-R1 of SEQ ID NO: 18.
8. The probes according to claim 2, wherein the species-specific oligonucleotide probe is selected from a group consisting of DsMV-O1 of SEQ ID NO: 19, PRSV-O1 of SEQ ID NO: 20, PVA-O1: of SEQ ID NO: 21, PVY-O1 of SEQ ID NO: 22, TuMV-O1 of SEQ ID NO: 23, ZaMV-O1 of SEQ ID NO: 24, ZaMMV-O1 of SEQ ID NO: 25 and ZYMV-O1 of SEQ ID NO: 26.
9. A method for identifying a target virus in an infected subject comprising the steps of
(i) obtaining probes for identifying the target virus according to claim 1;
(ii) obtaining a total nucleic acid preparation of the infected subject;
(iii) preparing a test sample by amplifying the total nucleic acid preparation of the infected subject with the first pair of primers according to claim 1;
(iv) contacting the test sample with the species-specific probe according to claim 1; and
(v) detecting a hybridization between the species-specific probe and the test sample, wherein the hybridization indicates the target virus is identified in the infected subject.
10. The method according to claim 9, wherein the step of contacting the test sample with the species-specific probe of the target virus comprises reverse dot blot hybridization.
11. The method according to claim 9, wherein the test sample is prepared by reverse transcription polymerase chain reaction (RT-PCR).
12. The method according to claim 9, wherein the species-specific probe is a species-specific oligonucleotide probe.
13. The method according to claim 9, wherein the species-specific probe is a species-specific cDNA probe prepared by amplifying a target virus gene sequence with a second pair of primers comprising at least one species-specific primer corresponding to a highly variable sequence between the first and the second highly conserved regions of the target virus.
14. The method according to claim 9, wherein the species-specific probe is immobilized with a nylon membrane.
15. The method according to claim 9, wherein the target virus species is a potyvirus species.
16. A degenerate primer pair for detecting potyviruses comprising:
a forward degenerate primer selected from a group consisting of:
PNIbF0:
5\u2032AGAGGNAAYAAYAGYGGNCARCC3\u2032,
(SEQ ID NO: 1)
PNIbF1:
5\u2032GGBAAYAATAGTGGNCAACC3\u2032
(SEQ ID NO: 27)
and
PNIbF5:
5\u2032GCCAGCCCTCCACCGTNGTNGAYAA3\u2032,
(SEQ ID NO: 28)
and a reverse degenerate primer comprising:
PCPR1:
5\u2032GGGGAGGTGCCGTTCTCDATRCACCA3\u2032,
(SEQ ID NO: 2)
wherein R is adenine (A) or cytosine (C), Y is C or thymine (T), B is C, guanine (G) or T, D is A, G or T, and N is A, C, G or T.
17. A species-specific primer pair for detecting potyviruses, selected from a group consisting of
DsMV-F1 of SEQ ID NO: 3, and DsMV-R1 of SEQ ID NO: 11;
PRSV-F1 of SEQ ID NO: 4, and PRSV-R1 of SEQ ID NO: 12;
PVA-F1 of SEQ ID NO: 5, and PVA-R1 of SEQ ID NO: 13;
PVY-F1 of SEQ ID NO: 6, and PVY-R1 of SEQ ID NO: 14;
TuMV-F1 of SEQ ID NO: 7, and TuMV-R1 of SEQ ID NO: 15;
ZaMV-F1 of SEQ ID NO: 8, and ZaMV-R1 of SEQ ID NO: 16;
ZaMMV-F1 of SEQ ID NO: 9, and ZaMMV-R1 of SEQ ID NO: 17; and
ZYMV-F1 of SEQ ID NO: 10 and ZYMV-R1 of SEQ ID NO: 18.
18. A species-specific oligonucleotide probe for detecting potyviruses, selected from a group consisting of DsMV-O1 of SEQ ID NO: 19, PRSV-O1 of SEQ ID NO: 20, PVA-O1: of SEQ ID NO: 21, PVY-O1 of SEQ ID NO: 22, TuMV-O1 of SEQ ID NO: 23, ZaMV-O1 of SEQ ID NO: 24, ZaMMV-O1 of SEQ ID NO: 25 and ZYMV-O1 of SEQ ID NO: 26.
19. The method according to claim 9, wherein the first pair of primers comprising
a forward degenerate primer selected from a group consisting of
PNIbF0:
5\u2032AGAGGNAAYAAYAGYGGNCARCC3\u2032,
(SEQ ID NO: 1)
PNIbF1:
5\u2032GGBAAYAATAGTGGNCAACC3\u2032
(SEQ ID NO: 27)
and
PNIbF5:
5\u2032GCCAGCCCTCCACCGTNGTNGAYAA3\u2032,
(SEQ ID NO: 28)
and a reverse degenerate primer comprising
PCPR1:
5\u2032GGGGAGGTGCCGTTCTCDATRCACCA3\u2032,
(SEQ ID NO: 2)
wherein R is adenine (A) or cytosine (C), Y is C or thymine (T), B is C, guanine (G) or T, D is A, G or T, and N is A, C, G or T.
20. The method according to claim 15, wherein the potyvirus species is one or more selected from the group consisting of Dasheen mosaic virus (DsMV), Papaya ringspot virus (PRSV), Potato virus A (PVA), Potato virus Y (PVY), Turnip mosaic virus (TuMV), Zantedeschia mosaic virus (ZaMV), Zantedeschia mild mosaic virus (ZaMMV) and Zucchini yellow mosaic virus (ZYMV).
21. The method according to claim 13, wherein the second pair of primers comprising a forward species-specific primer and reverse species-specific primer each corresponding to, respectively, a first and a second highly variable sequences between the first and the second highly conserved regions of the target virus.
22. The method according to claim 13, wherein the second pair of primers comprising a species-specific primer corresponding to a highly variable sequence between the first and the second highly conserved regions and a primer corresponding to a sequence selected from the first and the second highly conserved regions.
23. The method according to claim 21, wherein the second pair of primers is selected from a group consisting of
DsMV-F1 of SEQ ID NO: 3, and DsMV-R1 of SEQ ID NO: 11;
PRSV-F1 of SEQ ID NO: 4, and PRSV-R1 of SEQ ID NO: 12;
PVA-F1 of SEQ ID NO: 5, and PVA-R1 of SEQ ID NO: 13;
PVY-F1 of SEQ ID NO: 6, and PVY-R1 of SEQ ID NO: 14;
TuMV-F1 of SEQ ID NO: 7, and TuMV-R1 of SEQ ID NO: 15;
ZaMV-F1 of SEQ ID NO: 8, and ZaMV-R1 of SEQ ID NO: 16;
ZaMMV-F1 of SEQ ID NO: 9, and ZaMMV-R1 of SEQ ID NO: 17; and
ZYMV-F1 of SEQ ID NO: 10 and ZYMV-R1 of SEQ ID NO: 18.
24. The method according to claim 22, wherein the second pair of primers comprising
a forward species-specific primer selected from a group consisting of DsMV-F 1 of SEQ ID NO: 3; PRSV-F1 of SEQ ID NO: 4; PVA-F1 of SEQ ID NO: 5; PVY-F1 of SEQ ID NO: 6; TuMV-F1 of SEQ ID NO: 7; ZaMV-F1 of SEQ ID NO: 8; ZaMMV-F1 of SEQ ID NO: 9; and ZYMV-F 1 of SEQ ID NO: 10; and
a reverse degenerate primer comprising
PCPR1:
5\u2032GGGGAGGTGCCGTTCTCDATRCACCA3\u2032,
(SEQ ID NO: 2)
wherein R is adenine (A) or cytosine (C), Y is C or thymine (T), B is C, guanine (G) or T, D is A, G or T, and N is A, C, G or T.
25. The method according to claim 12, wherein the species-specific oligonucleotide probe is selected from the group consisting of DsMV-O1 of SEQ ID NO: 19, PRSV-O1 of SEQ ID NO: 20, PVA-O1: of SEQ ID NO: 21, PVY-O1 of SEQ ID NO: 22, TuMV-O1 of SEQ ID NO: 23, ZaMV-O1 of SEQ ID NO: 24, ZaMMV-O1 of SEQ ID NO: 25 and ZYMV-O1 of SEQ ID NO: 26.
26. The method according to claim 9, further comprising the steps of
i) obtaining one or more additional species-specific probes for one or more additional target viruses, the one or more additional target viruses having gene sequences comprising the first and the second highly conserved regions, the one or more additional species-specific probes comprising one or more highly variable sequences between the first and the second highly conserved regions of the one or more additional target viruses;
ii) contacting the test sample with the one or more additional species-specific probes; and
iii) detecting a hybridization between the one or more additional species-specific probes and the test sample, wherein the hybridization indicates the one or more additional target viruses are identified in the infected subject.
27. The method according to claim 26, wherein the target viruses are potyviruses.