1. An image sensor with functions of repairing column readout circuits comprising:
a pixel array comprising a plurality of pixel column groups;
a column readout circuit array comprising:
a plurality of column readout circuit groups, set in a row along a first direction, each column readout circuit group of the plurality of column readout circuit groups is individually coupled to a pixel column group of the pixel array in order and comprises a specific number of column readout circuits for reading out pixel values of each pixel column of the pixel column group, respectively; and
a redundant column readout circuit group, set on a first side of the plurality of column readout circuit groups along the first direction, comprising a plurality of redundant column readout circuits, the number of the plurality of redundant column readout circuits is equal to the specific number;
an addressing unit for generating a repair control signal according to a location of a first column readout circuit group of the plurality of column readout circuit groups in the column readout circuit array when column readout circuits of the first column readout circuit group have defects; and
a repair unit, coupled to the pixel array, the column readout circuit array and the addressing unit, for switching all pixel column groups, originally coupled to column readout circuit groups starting from the first column readout circuit group along the first direction, to individually couple to column readout circuit groups starting from a second column readout circuit group along the first direction and the redundant column readout circuit group in order according to the repair control signal, wherein the second column readout circuit group is a column readout circuit group next to the first column readout circuit group along the first direction.
2. The image sensor of claim 1, wherein the column readout circuit array further comprises a second redundant column readout circuit group, the second redundant column readout circuit group is set on a second side of the plurality of column readout circuit groups and comprises a plurality of redundant column readout circuits, the number of the plurality of redundant column readout circuits is equal to the specific number.
3. The image sensor of claim 1, wherein the column readout circuit is a correlative double sampling (CDS) circuit.
4. The image sensor of claim 1, wherein the column readout circuit is an amplifier.
5. The image sensor of claim 1, wherein the repair unit comprises a plurality of repair groups individually corresponding to the plurality of pixel column groups of the pixel array, each repair group of the plurality of repair groups further comprising a plurality of switches, the number of the plurality of switches is equal to the specific number.
6. The image sensor of claim 1, wherein the addressing unit is a decoder.
7. The image sensor of claim 1 wherein the image sensor is a CMOS image sensor.
8. A method for repairing an image sensor, the image sensor comprising a pixel array and a column readout circuit array, the column readout circuit array comprising a plurality of column readout circuit groups set in a row along a first direction, each column readout circuit group of the plurality of column readout circuit groups is individually coupled to a pixel column group of the pixel array and comprises a specific number of column readout circuits for reading out pixel values of each pixel column of the pixel column group, the method comprising:
forming a redundant column readout circuit group on a first side of the plurality of column readout circuit groups along the first direction, the redundant column readout circuit group comprising a plurality of redundant column readout circuits, the number of the plurality of redundant column readout circuits is equal to the specific number;
generating a repair control signal according a position of a first column readout circuit group of the plurality of column readout circuit groups when column readout circuits of the first column readout circuit group have defects; and
switching all pixel column groups, originally coupled to column readout circuit groups starting from the first column readout circuit group along the first direction, to individually couple to column readout circuit groups starting from a second column readout circuit group along the first direction and the redundant column readout circuit group in order according to the repair control signal, wherein the second column readout circuit group is a column readout circuit group next to the first column readout circuit group along the first direction.
9. The method of claim 8 further comprising:
forming a second redundant column readout circuit group on a second side of the plurality of column readout circuit groups, the second redundant column readout circuit group comprising a plurality of redundant column readout circuits, the number of the plurality of redundant column readout circuits is equal to the specific number.
10. The method of claim 8, wherein the column readout circuit is a correlative double sampling (CDS) circuit.
11. The method of claim 8, wherein the column readout circuit is an amplifier.
12. The method of claim 8, wherein the repair control signal is generated by an addressing unit.
13. The method of claim 12, wherein the addressing unit is a decoder.
14. The method of claim 8, wherein the image sensor is an CMOS image sensor.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A power semiconductor module comprising:
a metal base;
plural wiring substrates provided on said metal base, a first wiring substrate of the wiring substrates having a power circuit including a power semiconductor device;
a substrate containing portions having a resin portion in which one of said wiring substrates is contained, and
wherein said one of said wiring substrates is positioned in self-alignment on said metal substrate on the basis of an inner wall of said resin portion of the substrate containing portion.
2. A power semiconductor module according to claim 1, wherein a second wiring substrate of the wiring substrates has a control circuit for controlling the power circuit.
3. A power semiconductor module according to claim 2, wherein a third wiring substrate of the wiring substrates has terminals for electrically connecting the power circuit to the control circuit.
4. A power semiconductor module according to claim 3, wherein the third wiring substrate is arraged on one side of the module.
5. A power semiconductor module according to claim 1, wherein a minimum value of a gap between at least two sides of said one of the wiring substrates and said resin portion of the substrate containing portion is in a range of 1.1 mm or less.
6. A power semiconductor module according to claim 1, wherein the resin portion of the substrate containing portion is formed with a step for allowing the wiring substrates to be contained in the substrate containing portion in such a manner as to be deviated from each other, and the step is used for positioning between the wiring substrates.
7. A power semiconductor module according to claim 1, wherein the resin porton of the substrate containing portion has a projection for positioning said one of the wiring substrates.
8. A power semiconductor module according to claim 1, wherein said one of the substrates has a projection for positioning said one of the substrates.
9. A power semiconductor module according to claim 3, wherein the terminals are arranged in a line with a specific pitch and are fixed with a resin to form connection terminals.
10. A power semiconductor module according to claim 1, further comprising an inputoutput control terminal of the module, wherein a second wiring substrate of the wiring substrates has a bonding pad for a connection between said one of th wiring substrates and said inputoutput control terminal.
11. A power semiconductor module according to claim 2, further comprising an inputoutput control terminal of the module, wherein the second wiring substrate has bonding pads for both of a connection between the power circuit and the control circuit and a connection between the control circuit and the inputoutput control terminal.
12. A power semiconductor module according to claim 2, further comprising a resin layer integrated with the resin portion provided on the ground of the wiring substrate containing portion, wherein the second wiring substrate is electrically insulated to the metal base by the resin layer.