1. A semiconductor structure comprising:
a substrate comprising a dielectric surface;
a first surface semiconductor layer of a first orientation located upon the dielectric surface; and
a stack layer located laterally separated from the first surface semiconductor layer upon the dielectric surface, the stack layer comprising:
a buried semiconductor layer located nearer the dielectric surface; and
a second surface semiconductor layer of a second orientation different from the first orientation located over and not contacting the buried semiconductor layer.
2. The semiconductor structure of claim 1 wherein the buried semiconductor layer is of the first orientation.
3. The semiconductor structure of claim 1 further comprising a buried dielectric layer located interposed between the buried semiconductor layer and the second surface semiconductor layer.
4. The structure of claim 1 wherein the substrate further comprises a semiconductor substrate.
5. The structure of claim 1 wherein the substrate comprises a dielectric substrate having the dielectric surface.
6. The structure of claim 1 wherein the first surface semiconductor layer and the second surface semiconductor layer are coplanar.
7. The structure of claim 1 wherein:
the first orientation is a (100) orientation; and
the second orientation is selected from the group consisting of a (110) and a (111) orientation.
8. The structure of claim 7 further comprising:
an n-FET located upon the first surface semiconductor layer; and
a p-FET located upon the second surface semiconductor layer.
9. A method for fabricating a semiconductor structure comprising:
forming laterally separated upon a dielectric surface of a substrate:
a first surface semiconductor layer of a first orientation; and
a stack layer which comprises a buried semiconductor layer formed over the dielectric surface and a second surface semiconductor layer of a second orientation different from the first orientation formed over and not contacting the buried semiconductor layer.
10. The method of claim 9 wherein the buried semiconductor layer is of the first orientation.
11. The method of claim 9 wherein the stack layer further comprises a dielectric layer formed interposed between the buried semiconductor layer and the second surface semiconductor layer.
12. The method of claim 9 wherein the substrate further comprises a semiconductor substrate.
13. The method of claim 9 wherein the substrate comprises a dielectric substrate having the dielectric surface.
14. The method of claim 9 wherein the first surface semiconductor layer and the second surface semiconductor layer are coplanar.
15. A method for fabricating a semiconductor structure comprising:
providing a substrate comprising a dielectric surface having a first semiconductor layer of a first orientation formed thereupon;
bonding a second semiconductor layer of a second orientation different from the first orientation to the first semiconductor layer while utilizing a bonding layer;
patterning the second semiconductor layer, bonding layer and first semiconductor layer to form laterally separated upon the dielectric surface a first stack layer and a second stack layer each comprising a patterned second semiconductor layer, a patterned bonding layer and a patterned first semiconductor layer;
stripping the patterned second semiconductor layer and the patterned bonding layer from the second stack layer but not the first stack layer to expose the patterned first semiconductor layer of the second stack layer; and
augmenting epitaxially the patterned first semiconductor layer of the second stack layer to the height of the patterned second semiconductor layer of the first stack layer.
16. The method of claim 15 wherein the substrate comprises a semiconductor-on-insulator semiconductor substrate.
17. The method of claim 15 wherein each of the first semiconductor layer and the second semiconductor layer comprises a semiconductor material independently selected from the group consisting of silicon, germanium, silicon-germanium alloy, silicon carbide, silicon-germanium alloy carbide and compound semiconductor materials.
18. The method of claim 15 wherein the bonding layer is formed upon the first semiconductor layer.
19. The method of claim 15 wherein the bonding layer is formed upon the second semiconductor layer.
20. The method of claim 15 wherein the bonding layer comprises an oxide of at least one of the first semiconductor layer and the second semiconductor layer.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of the formula I
51
wherein X1 and X2 are independently
H,
F, or
Cl;
wherein Q1 is:
52
wherein Z1 is
a) CH2, or
b) CH(R5)CH2;
wherein Z2 is
a) O2S,
b) O, or
c) N(R8);
wherein Z3 is
a) O2S, or
b) O;
wherein A1 is
a) H, or
b) CH3;
wherein A2 is
a) H,
b) HO,
c) CH3CO2,
d) CH3,
e) CH3O,
f) R2OCH2C(O)NH
g) R3OC(O)NH,
h) R4C(O)NH,
i) (C1-C2)alkyl-OC(O), or
j) HOCH2; or
A1 and A2 taken together are:
53
b) O
wherein R1 is
a) CHO,
b) COCH3,
c) COCHCl2,
d) COCHF2,
e) CO2CH3,
f) SO2CH3, or
g) COCH2OH;
wherein R2 is
a) H,
b) CH3,
c) phenyl-CH2, or
d) CH3C(O);
wherein R3 is
a) (C1-C3)alkyl-, or
b) phenyl-;
wherein R4 is
a) H,
b) (C1-C4)alkyl,
c) aryl-(CH2)p,
d) ClH2C,
e) Cl2HC,
f) FH2C,
g) F2HC, or
h) (C3-C6)cycloalkyl;
wherein R5 is
a) H, or
b) (C1-C3)alkyl;
wherein R6 is
a) H, or
b) HOH2C;
wherein R7 is
a) H, or
b) H3C;
wherein R8 is
a) R2OC(R10)(R11)C(O),
b) R3OC(O),
c) R4C(O),
54
f) H3CC(O)(CH2)2C(O),
g) R9SO2,
55
i) R12NHC(O);
wherein R9 is
a) CH3,
b) CH2Cl
c) CH2CHCH2,
d) aryl, or
e) CH2CN;
wherein R10 and R11 are independently
a) H,
b) CH3; or
R10 and R11 taken together are CH2CH2;
wherein R12 is (CH2)p-aryl;
wherein R13 is
a) R2OC(R10)(R11)C(O),
b) R3OC(O),
c) R4C(O),
d) R9SO2, or
e) R12NHC(O);
wherein m is zero (0) or one (1);
wherein n is one (1) to three (3), inclusive;
wherein p is zero (0) or one (1);
wherein aryl is phenyl substituted with zero (0) or one (1) of the following:
a) F,
b) Cl,
c) OCH3,
d) OH,
e) NH2,
f) (C1-C4)alkyl,
g) OC(O)OCH3,
h) NO2, or
i) CN;
with the following provisos:
1) in the moiety of formula II, Z1 is CH(R5)CH2 wherein R5 is (C1-C3)alkyl, only when n is one (1), A1 is H and A2 is R2OCH2C(O)NH, R3OC(O)NH, or R4C(O)NH; and
2) in the moiety of formula II, when Z1 is CH2, n is one (1).
2. The compound of claim 1 wherein Q1 is the moiety of formula II.
3. The compound of claim 1 wherein Q1 is the moiety of formula III.
4. The compound of claim 1 wherein Q1 is the moiety of formula IV.
5. The compound of claim 1 wherein Q1 is the moiety of formula V.
6. The compound of claim 1 wherein one of X1 and X2 is H and the other is F or wherein X1 is F and X2 is F.
7. The compound of claim 1 wherein R1 is acetyl.
8. The compound of claim 1 selected from the group consisting of:
(S)N3-3-fluoro-4-( 1,1-dioxothiazolidin-3-yl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-(3-oxazolidinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-(1,1-dioxothiomorpholin-4-yl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-(1S,4S)-2-thia-2,2-dioxo-5-azabicyclo2.2.1heptan-5-ylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3,5-difluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylhydroxyacetamide N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylformamide N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylmethylcarbamate N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethyldichloroacetamide N-oxide;
(S)-N-3-3-fluoro-4-(1S,4S)-2-oxa-5-azabicyclo2.2.1heptan-5-ylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-(3-oxo-1-azetidinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-(3-methoxy-3-methyl-1-azetidinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-3-(methoxycarbonyl)amino-1-azetidinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-3-(hydroxyacetyl)amino-1-azetidinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-Fluoro-4-(3-hydroxypyrrolidinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-Fluoro-4-(cis-3-(hydoxyacetylamino)-4-methylpyrrolidinyl)-phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-Fluoro-4-(trans-3-(methoxycarbonylamino)-4-methylpyrrolidinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-4-( 1,4-dioxa-8-aza-spiro4.5dec-8-yl)-3-fluoro-phenyl-2-oxo-oxazolidin-5-ylmethyl-acetamide N-oxide;
(S)-N-3-3-fluoro-4-(2-hydroxymethyl-1,4-dioxa-8-aza-spiro4.5dec-8-yl)phenyl-2-oxo-oxazolidin-5-ylmethyl-acetamide N-oxide;
(S)-1-4-5-(acetylaminomethyl)-2-oxo-oxazolidin-3-yl-2-fluoro-phenylpiperidine-4-carboxylic acid ethyl ester N-oxide;
(S)-N-3-3-fluoro-4-(4-hydroxymethylpiperidin-1-yl)-phenyl-2-oxo-oxazolidin-5-ylmethyl-acetamide N-oxide;
(S)-N-3-3-fluoro-4-(4-oxoazepin-1-yl)-phenyl-2-oxo-oxazolidin-5-ylmethyl-acetamide N-oxide;
(S)-4-(4-(5-((acetylamino)methyl)-2-oxo-3-oxazolidinyl)phenyl)-1-piperazinecarboxylic acid, methyl ester N-oxide;
(S)-4-(4-(5-((acetylamino)methyl)-2-oxo-3-oxazolidinyl)-2-fluorophenyl)-1-piperazinecarboxylic acid, ethyl ester N-oxide;
(S)-N-3-3-fluoro-4-cis-3-(hydroxyacetyl)-3,7-diazabicyclo3.3.0octan-7-ylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-cis-3-(cyclopropyl)carbonyl-3,7-diazabicyclo3.3.0octan-7-ylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-cis-3-(methylsulfonyl)-3,7-diazabicyclo3.3.0octan-7-ylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3,5-difluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-4-4-5-(acetylamino)methyl-2-oxo-3-oxazolidinyl-2,6-difluorophenyl-1-piperazinecarboxylic acid, methyl ester N-oxide; and
(S)-4-4-5-(acetylamino)methyl-2-oxo-3-oxazolidinyl-2-fluorophenyl-1-piperazinecarboxylic acid, methyl ester N-oxide.
9. The compound of claim 8 selected from the group consisting of:
(S)-N-3-3,5-difluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-morpholinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3,5-difluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-4-4-5-(acetylamino)methyl-2-oxo-3-oxazolidinyl-2,6-difluorophenyl-1-piperazinecarboxylic acid, methyl ester N-oxide; and
(S)-4-4-5-(acetylamino)methyl-2-oxo-3-oxazolidinyl-2-fluorophenyl-1-piperazinecarboxylic acid, methyl ester N-oxide.
10. The compound of claim 1 selected from the group consisting of:
(S)-N-3-3-fluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinyl-methylacetamide N-oxide;
(S)-N-3-3-Fluoro-4-(4-morpholinyl)phenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide;
(S)-N-3-3-fluoro-4-4-(methylsulfonyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinyl-methylacetamide N-oxide;
(S)-N-3-3,5-difluoro-4-4-(hydroxyacetyl)-1-piperazinylphenyl-2-oxo-5-oxazolidinyl-methylacetamide N-oxide;
(S)-N-3-4-4-(cyanomethyl)sulfonyl-1-piperazinyl-3-fluorophenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide; and
(S)-N-3-4-4-(2-cyanophenyl)sulfonyl-1-piperazinyl-3-fluorophenyl-2-oxo-5-oxazolidinylmethylacetamide N-oxide.