What is claimed is:
1. A circuit package, comprising:
a flange;
at least one lead; and
a frame molded to the flange and to the at least one lead; wherein:
the at least one lead extends through the frame; and
the frame comprises a thermoplastic material having a melting temperature greater than about 340 C.
2. The circuit package of claim 1, wherein:
the frame includes a key having a key profile;
the flange defines an interlock feature having an interlock profile complementary to the key profile; and
wherein the key is in intimate contact with the interlock feature.
3. The circuit package of claim 2, wherein the interlock profile is dovetail shaped.
4. The circuit package of claim 2, wherein the interlock profile is T shaped.
5. The circuit package of claim 2, wherein the interlock profile is L shaped.
6. The circuit package of claim 2, wherein the interlock feature is a groove in the flange.
7. The circuit package of claim 2, wherein the interlock feature stands proud of a surface of the flange.
8. The circuit package of claim 1, wherein:
the at least one lead defines at least one hole therethrough; and
a portion of the thermoplastic frame material extends through the hole.
9. The circuit package of claim 8, wherein the at least one hole is rectangular.
10. The circuit package of claim 8, wherein the at least one hole comprises a plurality of holes.
11. The circuit package of claim 8, wherein, in a lateral cross-section of the at least one lead and passing through the at least one hole, a cross-sectional area of the at least one hole is less than or equal to about 25% of a cross-sectional area of the at least one lead.
12. The circuit package of claim 1, wherein:
the at least one lead includes a retention feature proximate to one end thereof, the retention feature having an outward-facing portion; wherein
a portion of the thermoplastic frame material abuts the outward-facing portion of the retention feature.
13. The circuit package of claim 12, wherein the retention feature comprises a hooked edge.
14. The circuit package of claim 12, wherein the retention feature comprises a ridge.
15. The circuit package of claim 12, wherein the retention feature comprises a groove.
16. The circuit package of claim 1, wherein:
the at least one lead includes a retention feature proximate to one end thereof; wherein
a portion of the thermoplastic frame material abuts the retention feature.
17. The circuit package of claim 16, wherein the retention feature is a hooked edge.
18. The circuit package of claim 16, wherein the retention feature is a ridge.
19. The circuit package of claim 16, wherein the retention feature is a groove.
20. The circuit package of claim 1, wherein the flange comprises a convex bottom surface.
21. The circuit package of claim 20, wherein the convexity of the bottom surface is at least about 0.0001 inches.
22. The circuit package of claim 20, wherein the convexity of the bottom surface is between about 0.0005 and about 0.0010 inches.
23. The circuit package of claim 1, wherein the flange comprises at least 50% copper.
24. The circuit package of claim 1, wherein the flange comprises at least 90% copper.
25. The circuit package of claim 1, wherein the flange comprises at least about 98% copper.
26. The circuit package of claim 1, wherein the flange comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
27. The circuit package of claim 26, wherein the alloy contains at least about 98% copper.
28. The circuit package of claim 1, wherein the flange comprises:
between about 0.05% and about 1.5% zirconium; and
at least about 98.5% copper.
29. The circuit package of claim 1, wherein the flange comprises:
between about 0.05% and about 1.5% zirconium; and
the balance copper.
30. The circuit package of claim 1, wherein the flange comprises:
at about 0.085% silver; and
at least about 99.9% copper.
31. The circuit package of claim 1, wherein the at least one lead comprises at least 50% copper.
32. The circuit package of claim 1, wherein the at least one lead comprises at least 97% copper.
33. The circuit package of claim 1, wherein the at least one lead comprises an alloy of copper and at least one material chosen from a group comprising iron, phosphorus, zinc, zirconium, cobalt, tin, magnesium, nickel, chromium, titanium and silicon.
34. The circuit package of claim 33, wherein the alloy contains at least 97% copper.
35. The circuit package of claim 1, wherein the at least one lead comprises:
between about 2.1% and about 2.6% iron;
between about 0.015% and about 0.15% phosphorous;
between about 0.05% and 0.2% zinc; and
the balance copper.
36. The circuit package of claim 1, wherein the thermoplastic material comprises a liquid crystal polymer.
37. The circuit package of claim 2, wherein the liquid crystal polymer comprises:
para-hydroxybenzoic acid;
bisphenol; and
phathalic acid.
38. The circuit package of claim 2, wherein the liquid crystal polymer comprises:
a copolymer of p-hydroxybenzoic acid; and
6-hydroxy-2-naphthoic acid.
39. The circuit package of claim 2, wherein the liquid crystal polymer comprises terapolymers of formulation hydroxybenzoic acid, 4-4-bisphenol and terephthalic acid.
40. The circuit package of claim 1, wherein the thermoplastic material has a coefficient of thermal expansion within 60% of a coefficient of expansion of the at least one lead.
41. The circuit package of claim 1, wherein the thermoplastic material has a coefficient of thermal expansion of between about 7 ppm C. and 22 ppm C.
42. The circuit package of claim 1, wherein the thermoplastic material comprises between about 30% and about 45% talc balls between about 2 and about 3 microns in diameter.
43. The circuit package of claim 1, wherein the thermoplastic material comprises between about 30% and about 50% glass fiber.
44. The circuit package of claim 1, wherein the thermoplastic material comprises a plurality of graphite flakes.
45. The circuit package of claim 44, wherein the thermoplastic material comprises between about 10% and about 70% graphite flakes.
46. The circuit package of claim 44, wherein the thermoplastic material comprises between about 40% and about 50% graphite flakes.
47. The circuit package of claim 44, wherein the graphite flakes form a plurality of layers.
48. The circuit package of claim 47, wherein the graphite flakes are oriented parallel to a selected surface of the frame.
49. The circuit package of claim 1, further comprising a thermoplastic material lid attached to the frame.
50. The circuit package of claim 49, wherein the flange, the frame and the lid define an air cavity.
51. The circuit package of claim 49, wherein the lid is welded to the frame.
52. The circuit package of claim 49, wherein the thermoplastic material comprises a liquid crystal polymer.
53. The circuit package of claim 52, further comprising a semiconductor die attached to the flange and electrically bonded to the at least one lead.
54. The circuit package of claim 52, wherein the thermoplastic material comprises a plurality of graphite flakes.
55. The circuit package of claim 54, wherein the thermoplastic material comprises between about 10% and about 70% graphite flakes.
56. The circuit package of claim 54, wherein the thermoplastic material comprises between about 40% and about 50% graphite flakes.
57. The circuit package of claim 1, further comprising a semiconductor die attached to the flange and electrically bonded to the at least one lead.
58. The circuit package of claim 1:
wherein the frame comprises an edge adjacent a surface of the flange; and
further comprising a seal attached to the frame and to the flange along at least a portion of the edge.
59. The circuit package of claim 58, wherein the seal comprises epoxy.
60. The circuit package of claim 58, wherein the seal comprises silicone.
61. The circuit package of claim 1:
wherein the frame comprises a first edge adjacent a first surface of the at least one lead; and
further comprising a first seal attached to the frame and to the at least one lead along at least a portion of the first edge.
62. The circuit package of claim 61:
wherein the frame comprises a second edge adjacent a second surface of the at least one lead; and
further comprising a second seal attached to the frame and to the at least one lead along at least a portion of the second edge.
63. The circuit package of claim 62:
wherein the frame comprises a third edge adjacent a surface of the flange; and
further comprising a third seal attached to the frame and to the flange alone at least a portion of the third edge along.
64. The circuit package of claim 63, wherein the seal comprises epoxy.
65. The circuit package of claim 63, wherein the seal comprises silicone.
66. The circuit package of claim 63, wherein the seal comprises a material having:
a thixotropic index between 3.5 and 4.6;
a cason viscosity between 7.4 and 3 Pa.s;
a viscosity between 58 and 125 Pa.s at a shear rate of 0.95 per second; and
a viscosity between 12 and 30 Pa.s at a shear rate of 9.5 per second.
67. The circuit package of claim 1, further comprising a moisture barrier film on a surface of the frame.
68. A flange for mounting a semiconductor die, comprising:
a solid metallic body having:
a central planar die-attach area on a first side thereof, the die-attach area being flat to within about 0.005 inches per inch and having a surface roughness less than about 64 micro-inches; and
a second side, opposite the first side, having a surface roughness less than about 64 micro-inches;
wherein:
the metallic body comprises at least 50% copper.
69. The flange of claim 68, wherein the metallic body defines a plurality of openings by which the flange can be mounted to a substrate.
70. The flange of claim 68, wherein the metallic body comprises at least 90% copper.
71. The flange of claim 68, wherein the metallic body comprises at least about 98% copper.
72. The flange of claim 68, wherein the metallic body comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
73. The flange of claim 68, wherein the metallic body comprises an alloy containing at least about 98% copper.
74. The flange of claim 73, wherein the alloy contains between about 0.05% and about 1.5% zirconium and at least about 98.5% copper.
75. The flange of claim 73, wherein the alloy contains about 0.085% silver and at least about 99.9% copper.
76. The flange of claim 68, wherein the metallic body includes a recess that defines at least one undercut portion.
77. The flange of claim 76, wherein the recess includes a portion having a dovetail-shaped cross-section.
78. The flange of claim 76, wherein the recess includes a portion having a T-shaped cross-section.
79. The flange of claim 76, wherein the recess includes a portion having an L-shaped cross-section.
80. The flange of claim 68, wherein the metallic body includes a ridge that defines at least one undercut portion.
81. The flange of claim 80, wherein the ridge includes a portion having a dovetail-shaped cross-section.
82. The flange of claim 80, wherein the ridge includes a portion having a T-shaped cross-section.
83. The flange of claim 80, wherein the ridge includes a portion having an L-shaped cross-section.
84. The flange of claim 68, wherein the second side of the body is convex.
85. The flange of claim 84, wherein convexity of the second side is at least about 0.0001 inches.
86. The flange of claim 84, wherein convexity of the second side is between about 0.0005 and about 0.0010 inches.
87. A flange for mounting a semiconductor die, comprising:
a solid metallic body having:
a central planar die-attach area on a first side thereof, the die-attach area being flat to within about 0.005 inches per inch and having a surface roughness less than about 64 micro-inches; and
a second side, opposite the first side, has a surface roughness less than about 64 micro-inches and is convex.
88. The flange of claim 87, wherein the metallic body defines a plurality of openings by which the flange can be mounted to a substrate.
89. The flange of claim 87, wherein convexity of the second side is at least about 0.0001 inches.
90. The flange of claim 87, wherein convexity of the second side is between about 0.0005 and about 0.0010 inches.
91. The flange of claim 87, wherein the metallic body comprises at least 50% copper.
92. The flange of claim 87, wherein the metallic body comprises at least 90% copper.
93. The flange of claim 87, wherein the metallic body comprises at least about 98% copper.
94. The flange of claim 87, wherein the metallic body comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
95. The flange of claim 87, wherein the metallic body comprises an alloy containing at least about 98% copper.
96. The flange of claim 95, wherein the alloy contains between about 0.05% and about 1.5% zirconium and at least about 98.5% copper.
97. The flange of claim 95, wherein the alloy contains about 0.085% silver and at least about 99.9% copper.
98. A flange for mounting a semiconductor die, comprising:
a solid metallic body having:
a central planar die-attach area on a first side thereof, the die-attach area being flat to within about 0.005 inches per inch and having a surface roughness less than about 64 micro-inches; and
a second side, opposite the first side, having a surface roughness less than about 64 micro-inches;
wherein:
the metallic body includes a recess that defines at least one undercut portion.
99. The flange of claim 98, wherein the metallic body defines a plurality of openings by which the flange can be mounted to a substrate.
100. The flange of claim 98, wherein the recess includes a portion having a dovetail-shaped cross-section.
101. The flange of claim 98, wherein the recess includes a portion having a T-shaped cross-section.
102. The flange of claim 98, wherein the recess includes a portion having an L-shaped cross-section.
103. The flange of claim 98, wherein the metallic body comprises at least 50% copper.
104. The flange of claim 98, wherein the metallic body comprises at least 90% copper.
105. The flange of claim 98, wherein the metallic body comprises at least about 98% copper.
106. The flange of claim 98, wherein the metallic body comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
107. The flange of claim 98, wherein the metallic body comprises an alloy containing at least about 98% copper.
108. The flange of claim 107, wherein the alloy contains between about 0.05% and about 1.5% zirconium and at least about 98.5% copper.
109. The flange of claim 108, wherein the alloy contains about 0.085% silver and at least about 99.9% copper.
110. A flange for mounting a semiconductor die, comprising:
a solid metallic body having:
a central planar die-attach area on a first side thereof, the die-attach area being flat to within about 0.005 inches per inch and having a surface roughness less than about 64 micro-inches; and
a second side, opposite the first side, having a surface roughness less than about 64 micro-inches;
wherein:
the metallic body includes a ridge that defines at least one undercut portion.
111. The flange of claim 110, wherein the metallic body defines a plurality of openings by which the flange can be mounted to a substrate.
112. The flange of claim 110, wherein the ridge includes a portion having a dovetail-shaped cross-section.
113. The flange of claim 110, wherein the ridge includes a portion having a T-shaped cross-section.
114. The flange of claim 110, wherein the ridge includes a portion having an L-shaped cross-section.
115. The flange of claim 110, wherein the metallic body comprises at least 50% copper.
116. The flange of claim 110, wherein the metallic body comprises at least 90% copper.
117. The flange of claim 110, wherein the metallic body comprises at least about 98% copper.
118. The flange of claim 110, wherein the metallic body comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
119. The flange of claim 110, wherein the metallic body comprises an alloy containing at least about 98% copper.
120. The flange of claim 119, wherein the alloy contains between about 0.05% and about 1.5% zirconium and at least about 98.5% copper.
121. The flange of claim 120, wherein the alloy contains about 0.085% silver and at least about 99.9% copper.
122. A lead for a semiconductor circuit package, comprising a metal conductor and defining a plurality of laterally spaced holes therethrough.
123. The lead of claim 122, wherein each of the plurality of holes is rectangular.
124. The lead of claim 123, wherein, in a lateral cross-section of the lead and passing through the plurality of holes, a cross-sectional area of the plurality of holes is less than or equal to about 25% of a cross-sectional area of the lead.
125. The lead of claim 122, further comprising a frame molded thereto, a portion of the frame extending through the plurality of holes.
126. The lead of claim 125, wherein the frame comprises a liquid crystal polymer.
127. The lead of claim 122, wherein the lead comprises at least 50% copper.
128. The lead of claim 122, wherein the lead comprises at least 97% copper.
129. The lead of claim 122, wherein the lead comprises an alloy of copper and at least one material chosen from a group comprising iron, phosphorus, zinc, zirconium, cobalt, tin, magnesium, nickel, chromium, titanium and silicon.
130. The lead of claim 129, wherein the alloy contains at least 97% copper.
131. The lead of claim 122, wherein the lead comprises:
between about 2.1% and about 2.6% iron;
between about 0.015% and about 0.15% phosphorous;
between about 0.05% and 0.2% zinc; and
the balance copper.
132. A lead for a semiconductor circuit package, comprising a metal conductor having a lead retention feature proximate to one end thereof.
133. The lead of claim 132, wherein:
the lead retention feature comprises an outward-facing portion; and further comprising:
a frame molded to the metal conductor, a portion of the frame abutting the outward-facing portion of the lead retention feature.
134. The lead of claim 133, wherein the frame comprises a liquid crystal polymer.
135. The lead of claim 132, wherein the retention feature comprises a hooked edge.
136. The lead of claim 132, wherein the retention feature comprises a ridge.
137. The lead of claim 132, wherein the retention feature comprises a groove.
138. The lead of claim 132, wherein the lead comprises at least 50% copper.
139. The lead of claim 132, wherein the lead comprises at least 97% copper.
140. The lead of claim 132, wherein the lead comprises an alloy of copper and at least one material chosen from a group comprising iron, phosphorus, zinc, zirconium, cobalt, tin, magnesium, nickel, chromium, titanium and silicon.
141. The lead of claim 140, wherein the alloy contains at least 97% copper.
142. The lead of claim 132, wherein the lead comprises:
between about 2.1% and about 2.6% iron;
between about 0.015% and about 0.15% phosphorous;
between about 0.05% and 0.2% zinc; and
the balance copper.
143. The lead of claim 142, wherein the retention feature comprises a hooked edge.
144. The lead of claim 142, wherein the retention feature comprises a ridge.
145. The lead of claim 142, wherein the retention feature comprises a groove.
146. A method for enclosing a circuit package, comprising ultrasonically welding a thermoplastic material lid to a thermoplastic material frame of the circuit package using a welding signal having a frequency between about 50 KHz and about 60 KHz and an amplitude less than about 100 microns.
147. The method of claim 146, wherein the amplitude is less than about 60 microns.
148. A method for enclosing a circuit package, comprising laser welding a thermoplastic material lid to a thermoplastic material frame of the circuit package.
149. A method for enclosing a circuit package, comprising thermal welding a thermoplastic material lid to a thermoplastic material frame of the circuit package.
150. A method for fabricating a flange of a circuit package, comprising:
forming the flange from a material comprising at least about 50% copper.
151. The method of claim 150, wherein the material comprises at least about 90% copper.
152. The method of claim 150, wherein the material comprises at least about 98% copper.
153. The method of claim 150, wherein the material comprises an alloy of copper and at least one material chosen from a group comprising zirconium and silver.
154. The method of claim 150, wherein the material comprises between about 0.05% and about 1.5% zirconium and at least about 98.5% copper.
155. The method of claim 150, further comprising:
coining a frame retention feature into a first surface of the flange.
156. The method of claim 155, wherein the frame retention feature includes an undercut portion.
157. The method of claim 156, further comprising:
imparting a convex shape to a second surface, opposite the first surface, of the flange.
158. The method of claim 157, wherein convexity of the second surface is at least about 0.0001 inches.
159. The method of claim 157, wherein convexity of the second surface is between about 0.0005 and about 0.0010 inches.
160. A method for fabricating a lead of a circuit package, comprising:
stamping a lead frame from a material comprising at least about 50% copper.
161. A thermoplastic material, comprising:
a liquid crystal polymer; and
a plurality of graphite flakes.
162. The thermoplastic material of claim 161, wherein the thermoplastic material comprises between about 10% and about 70% graphite flakes.
163. The thermoplastic material of claim 161, wherein the thermoplastic material comprises between about 40% and about 50% graphite flakes.
164. The thermoplastic material of claim 162, wherein the liquid crystal polymer comprises:
para-hydroxybenzoic acid;
bisphenol; and
phathalic acid.
165. The thermoplastic material of claim 162, wherein the liquid crystal polymer comprises:
a copolymer of p-hydroxybenzoic acid; and
6-hydroxy-2-naphthoic acid.
166. The thermoplastic material of claim 162, wherein the liquid crystal polymer comprises terapolymers of formulation hydroxybenzoic acid, 4-4-bisphenol and terephthalic acid.
167. A structure comprising:
a composition of matter comprising:
a liquid crystal polymer; and
a plurality of graphite flakes; wherein
the structure has a surface and the plurality of graphite flakes are parallel to the surface.
168. A method for making a structure, comprising:
injecting into a mold a composition of matter comprising:
a liquid crystal polymer; and
a plurality of graphite flakes.
169. The method of claim 168, wherein the composition of matter comprises between about 10% and about 70% graphite flakes.
170. The method of claim 168, wherein the composition of matter comprises between about 40% and about 50% graphite flakes.
171. The method of claim 168, wherein the structure includes a surface; and the composition is injected such that, after the injecting, the plurality of graphite flakes
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An active arc suppression circuit of the type for suppressing an arc between mechanical relay contacts, the arc suppression circuit comprising in combination:
A. a power relay having (i) a first relay contact end connectable to one portion of a circuit, (ii) a second relay end connectable to a second portion of said circuit, and (iii) at least one electro-mechanical relay contact element intermediate the first relay contact end and second relay end, the mechanical relay contact element being moveable from a closed relay contact position in electrical communication with the first relay contact end to an open relay contact position distal from the first relay contact end;
B. an active shunt relay connected across said one portion of said circuit and said second portion of said circuit;
C. a power-off signal supply;
D. an active shunt relay timing controller section in communication with the power-off signal supply and said solid state shunt relay; and
E. a contact open delay controller section in communication with the power-off signal supply and to said power relay;
whereby the active shunt relay may temporarily shunt current from said one portion of said circuit to said second portion said circuit while the electro-mechanical relay contact element moves from said closed relay contact position toward said open relay contact position.
2. The active arc suppression circuit of claim 1 wherein (i) the power-off signal supply comprises an electrical signal supply connected to an isolator input on a first electrical current isolator, and (ii) the active shunt relay comprises a solid state shunt switch connected to an isolator output on said first electrical current isolator, whereby the solid state shunt switch switches on in response to a power-off signal transmitted from the electrical signal supply through said first electrical current isolator to the solid state shunt switch.
3. The active arc suppression circuit of claim 1 wherein said power relay is an electro-mechanical relay and has an inductive armature drivably connected to the electro-mechanical relay contact clement.
4. The active arc suppression circuit of claim 2 wherein said power relay comprises an electro-mechanical relay and has an inductive armature drivably connected to the electro-mechanical relay contact element.
5. The active arc suppression circuit of claim 1 wherein the contact open delay controller section comprises a delay circuit connected to a solid state delay relay.
6. The active arc suppression circuit of claim 2 wherein the contact open delay controller section comprises a delay circuit connected to a solid state delay relay.
7. The arc suppression circuit of claim 3 wherein the contact open delay controller section comprises a delay circuit connected to a solid state delay relay.
8. The active arc suppression circuit of claim 4 wherein the contact open delay controller section comprises a delay circuit connected to a solid state delay relay.
9. The active arc suppression circuit of claim 5 wherein the solid state delay relay comprises a delay transistor and wherein the contact open delay controller further comprises an electrical current isolator intermediate the delay circuit and the delay transistor.
10. The active arc suppression circuit of claim 6 wherein the solid state delay relay comprises a delay transistor and wherein the contact open delay controller further comprises a second electrical current isolator intermediate the delay circuit and the delay transistor.
11. The active arc suppression circuit of claim 7 wherein the solid state delay relay comprises a delay transistor and wherein the contact open delay controller further comprises an electrical current isolator intermediate the delay circuit and the delay transistor.
12. The arc suppression circuit of claim 8 wherein the solid state delay relay comprises a delay transistor and wherein the contact open delay controller further comprises a second electrical isolator intermediate the delay circuit and the delay transistor.
13. A power controller system of the type controllable by a power control separate from the power controller system, the power controller system comprising in combination:
A. a power controller housing;
B. a network communication client disposed in association with the power controller housing;
C. a power source penetrating the power controller housing;
D. at least one electrical output disposed in the power controller housing; and
E. at least one current shunting arc suppression power switching circuit disposed in the power controller housing and being in communication with the network communication client, said current shunting arc suppression power switching circuit comprising:
(i) a power switch relay disposed in the power controller housing and having mechanical contacts, a power input connection connected to the power source, and a power output connection connected to the one electrical output;
(ii) a solid state shunt relay disposed in the power controller housing intermediate the power input connection of the power source and the one electrical output;
(iii) a shunt relay controller section disposed in the power controller housing in communication with the network communication client and the solid sate shunt relay; and
(iv) a power switch delay controller section disposed in the power controller housing in communication with the power signal supply and said power switch relay.
14. The power controller system of claim 13 having a plurality of a plurality of electrical outputs disposed in the power controller housing and a plurality of said current shunting arc suppression power switching circuits disposed in the power controller housing, each among the plurality of electrical outputs being connected to a corresponding one among the plurality of current shunting arc suppression power switching circuits.
15. The power controller system of claim 14 wherein each power switch relay further comprises: (i) a mechanical switching element moveable between said mechanical contacts; and (ii) an induction armature connectable to the mechanical switching element and being in communication with said power switch delay controller.
16. The power controller system of claim 13 further comprising a power controller application connectable to a network and through said network to said network communication client.
17. The power controller system of claim 14 further comprising a power controller application connectable to a network and through said network to said network communication client.
18. The power controller system of claim 15 further comprising a power controller application connectable to a network and through said network to said network communication client.
19. A power controller comprising in combination:
A. a power controller housing;
B. at least one electro-mechanical relay disposed in the power controller housing and having at least one relay contact providing means for switching off electricity between a power source and an electrical load;
C. at least one solid slate shunt switch disposed in the power controller housing and providing solid state shunting means for switchably shunting electricity from the power source to the electrical load, and
D. timing controller means for first turning on the solid state shunting means, then opening said relay contact, and then turning off the solid state shunting means.
20. The power controller of claim 19 also including network client means for receiving a power control message over a communications network, said network client means being in communication with said timing controller.
21. The power controller of claim 19 wherein the timing controller is disposed in the power controller housing.
22. The power controller of claim 20 wherein the timing controller and the network client means are disposed in the power controller housing.
23. The power controller of claim 19 including a plurality of said electro-mechanical relays and a plurality of solid state shunting switches, with each said electro-mechanical relay being associated with a corresponding one among the plurality of solid state shunting switches.
24. The power controller of claim 23 further comprising a network client means for independently receiving a power control message for each said electro-mechanical relays and its corresponding solid state shunting switch.
25. The power controller of claim 21 also comprising a plurality of said electro-mechanical relays and a plurality of solid state shunting switches, with each said electro-mechanical relay being associated with a corresponding one among the plurality of solid state shunting switches, and further comprising network client means for independently receiving a power control message for each said electro-mechanical relays and its corresponding solid state shunting switch.
26. The power controller of claim 22 also comprising a plurality of said electro-mechanical relays and a plurality of solid state shunting switches, with each said electro-mechanical relay being associated with a corresponding one among the plurality of solid state shunting switches, and further comprising network client means for independently receiving a power control message for each said electro-mechanical relays and its corresponding solid state shunting switch.
27. The power controller of claim 23 also comprising a plurality of said electro-mechanical relays and a plurality of solid state shunting switches, with each said electro-mechanical relay being associated with a corresponding one among the plurality of solid sate shunting switches, and further comprising network client means for independently receiving a power control message for each said electro-mechanical relays and its corresponding solid state shunting switch.
28. The power controller of claim 23 also including network client means for receiving a power control message over a communication network, said network client means being in communication with said timing controller.
29. The power controller of claim 24 also including network client means for receiving a power control message over a communications network, said network client means being in communication with said timing controller.
30. The power controller of claim 25 also including network client means for receiving a power control message over a communications network, said network client means being in communication with said timing controller.
31. The power controller of claim 26 also including network client means for receiving a power control message over a communications network, said network client means being in communication with said timing controller.
32. An active arc suppression circuit of the type for suppressing an arc across electro-mechanical elements in a circuit, the active arc suppression circuit comprising in combination:
A. an electro-mechanical switch disposed between a current input and a current output within and adjacent one another in a circuit, the electro-mechanical switch having a first electro-mechanical contact connected to the current input and a second electro-mechanical contact connected to the current output;
B. a solid state shunt switch disposed within the circuit and connected to the current input and the current output in said circuit;
C. a shunt timing controller connected to the solid state shunt switch; and
D. a delay timing controller connected to the electro-mechanical switch.
33. The active arc suppression circuit of claim 32 wherein the shunt timing controller provides shunt means for activating the solid state shunt switch to shunt current between the current input and current output for a predetermined period.
34. The active arc suppression circuit of claim 32 wherein the delay timing circuit provides relay means for activating the electro-mechanical switch after the shunt activation means has activated the solid state shunt switch to shunt current between the current input and current output for a predetermined period.
35. The active arc suppression circuit of claim 33 wherein the delay timing circuit provides relay means for activating the electro-mechanical switch after the shunt activation means has activated the solid state shunt switch to shunt current between the current input and current output for a predetermined period.