1460907825-32a2b6f0-2496-473d-aa70-7e3d5a5765e9

1. A self aligned field effect transistor structure comprising:
an active region on a substrate;
a U-shaped gate insulation pattern on the active region; and
a gate electrode self-aligned by the gate insulation pattern and disposed in an inner space of the gate insulation pattern.
2. The self aligned field effect transistor structure of claim 1, wherein:
the gate insulation pattern comprises a sidewall and a bottom wall; and
a height of the sidewall is higher than a top height of the gate electrode.
3. The self aligned field effect transistor structure of claim 1, wherein the gate electrode is formed by supplying a conductive material to the inner space through a open top of the U-shaped gate insulation pattern.
4. The self aligned field effect transistor structure of claim 1, further comprising a sourcedrain self-aligned by the gate insulation pattern and disposed on the substrate adjacent to the gate insulation pattern.
5. The self aligned field effect transistor structure of claim 4, wherein the sourcedrain is formed by implanting an impurity ion on the substrate.
6. The self aligned field effect transistor structure of claim 4, wherein the sourcedrain is formed by supplying a conductive material on the substrate.
7. The self aligned field effect transistor structure of claim 6, wherein the gate electrode and the sourcedrain are formed of the same conductive material.
8. The self aligned field effect transistor structure of claim 6, wherein the gate electrode and the sourcedrain comprise at least one of Al, Cu, Mo, W, Cr, Pt, Polyaniline (PANI), a conductive polymer such as PEDOT, a Carbon Nano Tube (CNT), Pyrrolidine, and graphite.
9. The self aligned field effect transistor structure of claim 1, wherein:
the substrate comprises a glass substrate; and
the self aligned field effect transistor structure comprises a switching device of a display device.
10. The self aligned field effect transistor structure of claim 1, wherein a width of the active region is greater than a bottom width of the gate insulation pattern.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A device for signal transmission between two terminals having at least one cable positioned between them and housed in an essentially circular cartridge, to which cable connecting cables can be attached at the two terminals and whose length is greater than the distance of the two terminals from one another, at least one of the two terminals being movable relative to the other and the cartridge comprising a rotor rotatable around its axis and a fixed stator which together define an acceptor space serving to accept the cable, said device further comprising a compensation body (18) with variable axial height applied to at least one of the surfaces of rotor (15) and stator (16) bordering on the acceptor space (17); and wherein for a constant axial height (H) of the acceptor space (17) of the cartridge (K) and a variable axial height of the cable (10), the axial height of the compensation body (18) is dimensioned in such a way that the free space remaining between the cable (10) and the rotor (15) andor stator (16) of the cartridge (K) in the axial direction is essentially filled by the compensation body (18).
2. A device according to claim 1, characterized in that the compensation body (18) comprises a one-piece ring.
3. A device according to claim 1, characterized in that the compensation body (18) is interrupted around its circumference and comprises ring segments.
4. A device according to claim 1, characterized in that the compensation body (18) comprises ribs running in the radial direction of the cartridge (K).
5. A device according to claim 1, characterized in that the compensation body (18) is applied in one piece to one of the stator (16) and the rotor (15).
6. A device according to claim 1, characterized in that the compensation body (18) is divided into two partial bodies, one of which is applied to the stator (16) and the other to the rotor (15).
7. A device according to claim 1, characterized in that the compensation body (18) comprises a muffling material.