1. A method of producing nanoparticles using a continuous flow miniaturised reaction vessel.
2. The method of claim 1 wherein the reaction vessel has a reaction volume of from 1\xd710-5 to 1\xd710-11 litres.
3. The method of claim 1 wherein a reactant is continuously supplied to the reaction vessel and the nanoparticles produced by the reaction vessel are continuously removed therefrom.
4. The method of claim 1 comprising combining an aqueous solution of a cadmium salt and a sulphide salt in the continuous flow miniaturized reaction vessel to produce a plurality of cadmium sulphide nanoparticles.
5. The method of claim 1 wherein a stabiliser is added after the formation of the nanoparticles.
6. The method of claim 1 wherein the nanoparticles produced by the reaction vessel are monodisperse.
7. The method of claim 1 wherein a spatial variation in at least one reaction condition is established within the reaction vessel.
8. The method of claim 7 wherein at least one reaction condition varied is at least one of reagent concentration, pH, temperature, and intensity of optical illumination provided at varying concentrations.
9. The method of claim 8 wherein the nanoparticles produced are of varying sizes.
10. A nanoparticle produced by the method of claim 1.
11. A miniaturised nanoparticle production device comprising at least one inlet, a reaction chamber and at least one outlet.
12. The miniaturised nanoparticle production device of claim 11 arranged to produce a variation in the reaction conditions across the reaction chamber.
13. The miniaturised nanoparticle production device of claim 11 arranged to produce a variation in at least one of reagent concentration, pH, temperature, or intensity of optical illumination.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A polishing pad for a chemical mechanical polishing process, the polishing pad comprising:
a body having a groove with a rotational symmetric pattern.
2. The polishing pad as claimed in claim 1, wherein the groove has a width of 0.4 mm to 0.8 mm.
3. The polishing pad as claimed in claim 1, wherein the rotational symmetric pattern has a pitch of about 1.8 mm to about 2.5 mm.
4. The polishing pad as claimed in claim 3, wherein the groove has a depth of at least about 0.7 mm and less than a thickness of the body.
5. The polishing pad as claimed in claim 1, wherein the rotational symmetric pattern is a pattern having several concentric circles.
6. The polishing pad as claimed in claim 5, wherein the rotational symmetric pattern includes a first pattern of several concentric circles, and a second pattern with a radial shape that crosses the first pattern.
7. The polishing pad as claimed in claim 6, wherein the second pattern is formed by grooves that are spaced apart from each other and have a predetermined length.
8. The polishing pad as claimed in claim 1, wherein the rotational symmetric pattern includes a swirl shape diverging to the left or the right.
9. The polishing pad as claimed in claim 1, wherein the rotational symmetric pattern includes a circular groove disposed in the middle thereof.
10. A chemical mechanical polishing apparatus, comprising:
a platen configured to support and rotate a wafer; and
a polishing pad facing the platen and including a body having a groove with a rotational symmetric pattern.
11. The apparatus as claimed in claim 10, further comprising:
a pad head having the polishing pad attached thereto and configured to rotate and move the polishing pad; and
a slurry provider configured to provide a slurry on a surface of one side of the wafer.
12. The apparatus as claimed in claim 10, wherein the groove has a width of about 0.4 mm to about 0.8 mm.
13. The apparatus as claimed in claim 12, wherein the groove has a depth of at least about 0.7 mm and less than a thickness of the body.
14. The apparatus as claimed in claim 12, wherein the rotational symmetric pattern has a pitch of 1.8 mm to 2.5 mm.
15. The apparatus as claimed in claim 10, wherein the rotational symmetric pattern includes a swirl shape diverging to the left or right.
16. The apparatus as claimed in claim 15, wherein the diverging direction of the swirl shape corresponds to a rotation direction of the polishing pad.
17. The apparatus as claimed in claim 10, wherein the rotational symmetric pattern comprises a first pattern with a swirl shape, and a second pattern with a radial shape which crosses the first pattern.
18. The apparatus as claimed in claim 17, wherein the second pattern is formed by grooves that are spaced apart from each other and have a predetermined length.
19. The apparatus as claimed in claim 10, wherein the body of the polishing pad includes a groove with the rotational symmetric pattern in a side facing the platen, and a surface of the side facing the platen is parallel to a surface of the wafer.
20. The apparatus as claimed in claim 10, wherein the rotational symmetric pattern has a pitch of about 1.8 mm to about 2.5 mm, and the groove has a width of about 0.4 mm to about 0.8 mm, and a depth of at least about 0.7 mm and less than a thickness of the body.