1. A device with one or more internal flexibility sipes and located within apparel or clothing, said device comprising:
at least a first bladder, chamber or compartment;
at least a second bladder, chamber, or compartment located within said first bladder, chamber or compartment;
at least a first surface;
at least a second surface; and
at least one internal sipe;
wherein said internal sipe is defined by at least an internal portion of said first surface and at least an internal portion of said second surface;
said internal surface portions of said first and second surfaces defining said internal sipe oppose each other and can move relative to each other in a sliding motion; and
at least one attachment between said portions of said first and second surfaces defining said at least one internal sipe, at least one said attachment being located at a central portion of said first bladder, chamber, or compartment;
wherein said internal surface portion of said first surface forms at least a portion of an inner surface of at least said first bladder, chamber, or compartment and said internal surface portion of said second surface forms an outer surface of said second bladder, chamber, or compartment; and
wherein said device is located within apparel or clothing.
2. The device according to claim 1, wherein said internal sipe separates all of said first and said second surfaces that are internal.
3. The device according to claim 2, wherein said internal sipe includes a media.
4. The device according to claim 3, wherein said media is a lubricant.
5. The device according to claim 1, wherein at least a portion of said opposing surfaces defining said internal sipe are in contact with each other.
6. The device according to claim 1, wherein said internal sipe is a slit.
7. The device according to claim 1, wherein said first and second internal surface portions are substantially parallel.
8. The device according to claim 1, further comprising a third surface and a fourth surface and at least a second internal sipe;
wherein said second internal sipe is defined by at least an internal portion of said third surface and at least an internal portion of said fourth surface; and
the internal surface portions of said third and fourth surfaces defining said second internal sipe oppose each other and can move relative to each other in a sliding motion.
9. The device according to claim 1, wherein said second bladder, chamber, or compartment has at least one opening.
10. The device according to claim 1, wherein said first bladder, chamber, or compartment has at least one opening.
11. The device according to claim 1, wherein said second bladder, chamber, or compartment includes a structural element.
12. A device configured for apparel or clothing with one or more internal flexibility sipes, said device comprising:
at least a first bladder, chamber or compartment;
at least a second bladder, chamber, or compartment located within said first bladder, chamber or compartment;
at least a first surface;
at least a second surface;
at least one internal sipe;
wherein said internal sipe is defined by at least an internal portion of said first surface and at least an internal portion of said second surface;
said internal surface portions of said first and second surfaces defining said internal sipe oppose each other and can move relative to each other in a sliding motion; and
wherein said internal surface portion of said first surface forms at least a portion of an inner surface of at least said first bladder, chamber, or compartment and said internal surface portion of said second surface forms an outer surface of said second bladder, chamber, or compartment; and
at least one attachment between said portions of said first and second surfaces defining said at least one internal sipe, at least one said attachment being located at a central portion of said first bladder, chamber, or compartment.
13. The device according to claim 12, wherein said device is located within athletic, occupational or medical apparel.
14. Apparel or clothing with one or more internal flexibility sipes comprising:
at least a first bladder, chamber or compartment;
at least a second bladder, chamber, or compartment located within said first bladder, chamber or compartment;
at least a first surface;
at least a second surface;
at least one internal sipe;
wherein said internal sipe is defined by at least an internal portion of said first surface and at least an internal portion of said second surface;
said internal surface portions of said first and second surfaces defining said internal sipe oppose each other and can move relative to each other in a sliding motion; and
wherein said internal surface portion of said first surface forms at least a portion of an inner surface of at least said first bladder, chamber, or compartment and said internal surface portion of said second surface forms an outer surface of said second bladder, chamber, or compartment; and
at least one attachment between said portions of said first and second surfaces defining said at least one internal sipe, at least one said attachment being located at a central portion of said first bladder, chamber, or compartment.
15. The device according to claim 12 wherein said at least one second bladder, chamber, or compartment is formed by one or more structural elements of a foamed material.
16. The device according to claim 1, wherein said at least one second bladder, chamber, or compartment is formed by one or more structural elements of a foamed material.
17. The device according to claim 1, wherein said device comprises at least a part of an electronic andor electromechanical device.
18. The device according to claim 14, wherein said at least one second bladder, chamber, or compartment is formed by one or more structural elements of a foamed material.
19. The device according to claim 12, wherein said device comprises at least a part of an electronic andor electromechanical device.
20. The device according to claim 1, wherein said first bladder, chamber, or compartment is a bladder.
21. The device according to claim 12, wherein said first bladder, chamber, or compartment is a bladder.
22. The device according to claim 14, wherein said first bladder, chamber, or compartment is a bladder.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1.-21. (canceled)
22. A chemical mechanical polishing (CMP) method for a metal film formed on a semiconductor substrate, the method comprising:
preparing a slurry including a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film; and
performing chemical mechanical polishing (CMP) of the metal film using the slurry.
23. The method of claim 22, wherein a removal rate selectivity of the slurry is 20-1:1.
24. The method of claim 23, wherein the removal rate selectivity of the slurry is 17-1.5:1.
25. The method of claim 22, wherein a first of the at least one defect inhibitors forms a protective layer on the metal film.
26. The method of claim 22, wherein the first of the at least one defect inhibitors adsorbs onto a surface of the metal film.
27. The method of claim 22, wherein the first of the at least one defect inhibitors includes a polymeric compound further including a carboxyl group.
28. The method of claim 27, wherein the first of the at least one defect inhibitors includes a co-polymer further including acrylic acid.
29. The method of claim 28, wherein a content of the first of the at least one defect inhibitors is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry.
30. The method of claim 27, wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof.
31. The method of claim 30, further comprising a chelating agent.
32. The method of claim 31, wherein a content of the chelating agent is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry.
33. The method of claim 31, wherein the chelating agent includes at least one material selected from the group consisting of EDTA, NTA, DTPA, HEDTA, MGDA, salts thereof, and mixtures thereof.
34. The method of claim 22, wherein a content of the polishing agent is in a range of 0.5-20 weight % (inclusive) of a total weight of the slurry.
35. The method of claim 34, wherein the polishing agent includes at least one material selected from the group consisting of colloidal silica and fumed silica.
36. The method of claim 22, wherein a content of the oxidant is in a range of 0.5-5 weight % (inclusive) of a total weight of the slurry.
37. The method of claim 36, wherein the oxidant includes at least one material selected from the group consisting of hydrogen peroxide and ammonium persulfate.
38. The method of claim 30, further comprising a pH controller for controlling a pH of the slurry.
39. The method of claim 38, wherein the pH controller includes at least one material selected from the group consisting of H3PO4, HNO3, and H2SO4.
40. The method of claim 38, wherein the pH controller lowers the pH of the slurry and raises a zeta potential of the metal film between the metal film and the slurry.
41. The method of claim 30, wherein the first of the at least one defect inhibitors further lowers a pH of the slurry.
42. The method of claim 41, wherein the first of the at least one defect inhibitors further includes H+ ions.
43. The method of claim 22, wherein the metal film is an aluminum or aluminum alloy film.
44. The method of claim 22, wherein the metal film forms a wiring or a plug.
45. A chemical mechanical polishing (CMP) method for a metal film formed on a semiconductor substrate, the method comprising:
preparing a first slurry including a polishing agent and an oxidant;
performing chemical mechanical polishing (CMP) of the metal film using the first slurry;
preparing a second slurry including a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film; and
performing chemical mechanical polishing (CMP) of the metal film using the second slurry.
46. The method of claim 45, wherein a removal rate selectivity of the first slurry is greater than removal rate selectivity of the second slurry.
47. The method of claim 46, wherein the removal rate selectivity of the first slurry is >50:1 and the removal rate selectivity of the second slurry is 20-1:1.
48. The method of claim 47, wherein the removal rate selectivity of the second slurry is 17-1.5:1.
49. The method of claim 45, wherein a first of the at least one defect inhibitors forms a protective layer on the metal film.
50. The method of claim 45, wherein the first of the at least one defect inhibitors adsorbs onto a surface of the metal film.
51. The method of claim 45, wherein the first of the at least one defect inhibitors includes a polymeric compound further including a carboxyl group.
52. The method of claim 51, wherein the first of the at least one defect inhibitors includes a co-polymer further including acrylic acid.
53. The method of claim 52, wherein a content of the first of the at least one defect inhibitors is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry.
54. The method of claim 51, wherein the first of the at least one defect inhibitors includes at least one material selected from the group consisting of PAA, PAMA, salts thereof, and mixtures thereof.
55. The method of claim 54, further comprising a chelating agent.
56. The method of claim 55, wherein a content of the chelating agent is in a range of 0.01-20 weight % (inclusive) of a total weight of the slurry.
57. The method of claim 55, wherein the chelating agent includes at least one material selected from the group consisting of EDTA, NTA, DTPA, HEDTA, MGDA, salts thereof, and mixtures thereof.
58. The method of claim 45, wherein a content of the polishing agent is in a range of 0.5-20 weight % (inclusive) of a total weight of the slurry.
59. The method of claim 58, wherein the polishing agent includes at least one material selected from the group consisting of colloidal silica and fumed silica.
60. The method of claim 45, wherein a content of the oxidant is in a range of 0.5-5 weight % (inclusive) of a total weight of the slurry.
61. The method of claim 60, wherein the oxidant includes at least one material selected from the group consisting of hydrogen peroxide and ammonium persulfate.
62. The method of claim 54, further comprising a pH controller for controlling a pH of the slurry.
63. The method of claim 62, wherein the pH controller includes at least one material selected from the group consisting of H3PO4, HNO3, and H2SO4.
64. The method of claim 62, wherein the pH controller lowers the pH of the slurry and raises a zeta potential of the metal film between the metal film and the slurry.
65. The method of claim 54, wherein the first of the at least one defect inhibitors further lowers a pH of the slurry.
66. The method of claim 65, wherein the first of the at least one defect inhibitors further includes H+ ions.
67. The method of claim 45, wherein the metal film is an aluminum or aluminum alloy film.
68. The method of claim 45, wherein the metal film forms a wiring or a plug.