1. A method of fabricating a floating trap non-volatile memory device comprising:
providing a semiconductor substrate;
forming a tunneling insulating layer having a first dielectric constant on the substrate;
forming a charge storage layer on the tunneling insulating layer;
forming a blocking insulating layer on the charge storage layer, the blocking insulating layer having a second dielectric constant which is greater than the first dielectric constant of the tunneling insulating layer; and
forming a gate electrode on the blocking insulating layer.
2. The method of claim 1, further comprising forming a pair of impurity-doped layers in the substrate adjacent to opposite sides of the gate electrode.
3. The method of claim 1, wherein forming the blocking insulating layer comprises:
forming a first blocking layer of a first material; and
forming a second blocking layer of a second material, the second material having a different dielectric constant than the first material.
4. The method of claim 1, wherein forming a blocking insulating layer comprises:
forming a dielectric layer; and
forming a silicon oxide layer between the charge storage layer and the dielectric layer.
5. The method of claim 1, wherein forming a blocking insulating layer comprises:
forming a dielectric layer; and
forming a silicon oxide layer between the dielectric layer and the gate electrode.
6. The method of claim 1, wherein forming a blocking insulating layer comprises:
forming a dielectric layer;
forming a first silicon oxide layer between the charge storage layer and the dielectric layer; and
forming a second silicon oxide layer between the dielectric layer and the gate electrode.
7. The method of claim 1, wherein the blocking insulating layer comprises at least one of a metallic oxide material and a metallic oxynitride material of a group III element or group VB element.
8. The method of claim 1, wherein the blocking insulating layer comprises a metal oxide material doped with a group IV element.
9. The method of claim 8, wherein the group IV element is at least one of Zr, Si, Ti, and Hf.
10. The method of claim 1, wherein the blocking insulating layer is one of HfO2, Hf1-xAlxOy, Al2O3, La2O3, HfxSil-xO2, Hf\u2014Si-oxynitride, ZrO2, ZrxSil-xO2, Zr\u2014Si-oxynitride, and combinations thereof.
11. The method of claim 1, wherein the blocking insulating layer is one of Ta2O5, TiO2, PZTPb(Zi, Ti)O3, PbTiO3, PbZrO3, La-doped PZT(Pb, La)(Zi, Ti)O3, PbO, SrTiO3, BaTiO3, BST(Ba, Sr)TiO3, SBT (SrBi2Ta2O9), and Bi4Ti3O12, and combinations thereof.
12. The method of claim 1, wherein the charge storage layer comprises an insulating material.
13. The method of claim 12, wherein the insulating material comprises at least one of Si3N4, silicon oxynitride, silicon-rich SiO2, and a ferroelectric material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for the preparation of crystalline Carvedilol Form-II using novel salts of Carvedilol, comprising the steps of:
reacting 4-(2,3-epoxy propoxy) carbazole with 2-(2-methoxy phenoxy) ethyl amine in the molar ratio of 1:2.0 to 1:2.5 in an organic solvent selected from monochlorobenzene, ethylene glycol dimethyl ether (monoglyme) and mixtures thereof,
adjusting the pH after completion of the reaction with at least one organic acid in the presence of water and at least one organic solvent and isolating the produced novel Carvedilol salts,
treating the Carvedilol salts with at least one base in the presence of water and methylene chloride followed by separation of organic aqueous layers, and
drying the organic layer followed by removal of the at least one organic solvent and crystallization of the residue in ethyl acetate.
2. A process as claimed in claim 1, wherein the at least one organic acid is selected from oxalic acid and salicylic acid.
3. A process as claimed in claim 1, wherein the pH is adjusted to 2.0 to about 3.0.
4. A process as claimed in claim 1, wherein the at least one organic solvent used during pH adjustment is selected from isopropyl acetate, chlorobenzene and mixtures thereof.
5. A process as claimed in claim 1, wherein the at least one base is selected from alkali, alkaline metal hydroxides, ammonia, and organic bases.
6. A process as claimed in claim 1 wherein the at least one base is aq. ammonia.
7. A process as claimed in claim 1, wherein the novel Carvedilol salts are carvedilol oxalate and carvedilol salicylate.
8. A process as claimed in claim 3, wherein the pH is adjusted to 2.5 to about 2.8.
9. A process as claimed in claim 5 wherein the at least one base is aq. ammonia.