1. A method of reducing viscosity comprising:
A) preparing a liquid-based laundry, antimicrobial cleaner, or paint composition comprising;
a) from about 1 wt % to about 50 wt % of one or more surfactants;
b) from about 2 wt % to about 50 wt % of a glycerin short-chain aliphatic ether solvent; and
c) water; wherein the glycerin short-chain aliphatic ether solvent replaces a volatile organic compound; and
B) reducing the viscosity of the composition.
2. The method of claim 1, wherein the glycerin short-chain aliphatic ether is a monoalkyl glycerin aliphatic ether whose alkyl group has 1 to 2 carbon atoms.
3. The method of claim 1, wherein the glycerin short-chain aliphatic ether is glycerin monomethyl ether or glycerin monoethyl ether.
4. A method of coupling or solubilizing otherwise incompatible components comprising:
A) preparing a liquid-based laundry, antimicrobial cleaner, or paint composition comprising;
a) from about 1 wt % to about 50 wt % of one or more surfactants;
b) from about 2 wt % to about 50 wt % of a glycerin short-chain aliphatic ether solvent, wherein the glycerin short-chain aliphatic ether solvent replaces a volatile organic compound; and
B) coupling or solubilizing otherwise incompatible components into a homogenous, stable aqueous solution.
5. The method of claim 4, wherein the glycerin short-chain aliphatic ether is a monoalkyl glycerin aliphatic ether whose alkyl group has 1 to 2 carbon atoms.
6. A method of reducing viscosity comprising:
preparing a cleaner composition comprising from about 1 wt % to about 50 wt % of one or more surfactants, from about 2 wt % to about 50 wt % a glycerin short-chain aliphatic ether solvent and water, wherein the glycerin short-chain aliphatic ether solvent replaces a volatile organic compound and wherein the cleaner is a general purpose cleaner, hard surface cleaner, soft surface cleaner, glass cleaner, pot and pan cleaner, automotive cleaner, bathroom and tile cleaner, oven or grill cleaner, toilet cleaner, wood cleaner, sanitizer or floor maintenance cleaner; and
reducing the viscosity of the composition.
7. The method of claim 1 wherein the volatile organic compound is a glycol ether.
8. The method of claim 1 wherein the volatile organic compound is a specially denatured alcohol.
9. The method of claim 4 wherein the volatile organic compound is a glycol ether.
10. The method of claim 4 wherein the volatile organic compound is a specially denatured alcohol.
11. The method of claim 4 wherein the incompatible component is a d-limonene.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of measuring a deposition thickness of a material layer which is deposited on a substrate, comprising the steps of:
depositing a material onto a substrate and a deposition thickness monitoring region provided at a predetermined position on or near the substrate to form a material layer;
irradiating predetermined light onto the deposition thickness monitoring region and detecting light conveyed from the material layer at the deposition thickness monitoring region; and
measuring the deposition thickness of the material layer formed on the substrate based on the intensity of the light which is detected.
2. A method of measuring a deposition thickness of a material layer which is deposited on a substrate,
wherein the deposition thickness of the material layer is obtained by detecting the absorption intensity, the fluorescence intensity, or the reflection intensity, based on the light conveyed from the deposition thickness monitoring region.
3. A method of forming a material layer on a substrate, comprising the steps of:
depositing a material onto a substrate and a deposition thickness monitoring region provided at a predetermined position on or near the substrate to form a material layer;
irradiating predetermined light onto the deposition thickness monitoring region and detecting light conveyed from the material layer at the deposition thickness monitoring region; and
measuring the deposition thickness of the material layer formed on the substrate based on the intensity of the light which is detected and controlling a deposition rate of the material in accordance with the measurement result.
4. A method of forming a material layer according to claim 3, wherein
the depositing of the material is performed by an evaporation method in which the material in an evaporation source is heated and evaporated to be deposited on the substrate, and
at least one of a heating state of the material and a relative scanning rate of the evaporation source and the substrate is controlled to control the deposition rate.
5. A method of forming a material layer according to claim 4, wherein
a plurality of deposition thickness monitoring regions are provided on the substrate or near the substrate such that they are separate from each other, and
heating distribution of the evaporation source is controlled based on the deposition thickness at each deposition thickness monitoring region.
6. A method of forming a material layer according to claim 4, wherein
an evaporation chamber in which the material layer is formed by evaporation on the substrate includes window portions on an optical path of light which is emitted from a light emitting device disposed outside the evaporation chamber and reaches the deposition thickness monitoring region and on an optical path of light which is conveyed from the material layer and reaches a light receiving device, respectively, the respective window portions allowing transmission of the light, and
the window portions are heated while the material layer is being evaporated.
7. A method of forming a material layer according to claim 3, wherein
the deposition thickness of the material layer is obtained by detecting the absorption intensity, the fluorescence intensity, or the reflection intensity, based on the light conveyed from the deposition thickness monitoring region.
8. A deposition thickness measuring apparatus for detecting a deposition thickness of a material layer formed on a substrate, comprising:
a light irradiation device for irradiating predetermined light onto a deposition thickness monitoring region provided at a predetermined position on or near a substrate on which a material layer is deposited; and
a light detecting device for detecting the intensity of light conveyed from the deposition thickness monitoring region onto which light is irradiated,
wherein the deposition thickness of the material layer formed on the substrate is measured based on the intensity of light detected by the light detecting device.
9. A forming apparatus for forming a material layer by deposition on a substrate, comprising:
a light irradiation device for irradiating predetermined light onto a deposition thickness monitoring region provided at a predetermined position on or near a substrate on which a material layer is deposited;
a light detecting device for detecting the intensity of light transmitted from the deposition thickness monitoring region onto which light is irradiated; and
a deposition rate controller for measuring the deposition thickness of the material layer based on the intensity of light detected by the light detecting device and adjusting a deposition rate based on the result of measurement of the deposition thickness.
10. A forming apparatus according to claim 9, wherein
the deposition of the material is performed by an evaporation method in which the material in an evaporation source is heated and evaporated to be deposited on the substrate, and
at least one of a heating state of the material and a relative scanning rate of the evaporation source and the substrate is controlled to control the deposition rate.
11. A forming apparatus according to claim 10, wherein
a plurality of deposition thickness monitoring regions are formed on the substrate or near the substrate such that they are separate from each other, and
heating distribution of the evaporation source is controlled based on the deposition thickness at each deposition thickness monitoring region.
12. A forming apparatus according to claim 10, wherein
an evaporation chamber in which the material layer is formed by evaporation on the substrate includes window portions on an optical path of light which is emitted from a light emitting device disposed outside the evaporation chamber and reaches the deposition thickness monitoring region and on an optical path of light which is transmitted from the material layer and reaches a light receiving device, respectively, the respective window portions allowing transmission of the light,
the apparatus further comprising a heating section for heating the window portions.
13. A method of measuring a deposition thickness of a material layer on a substrate, comprising the steps of:
depositing a material onto a substrate and a deposition thickness monitoring region provided at a predetermined position on or near the substrate to form a material layer,
irradiating ultraviolet rays or light rays having a wavelength ranging from 200 nm to 900 nm onto the deposition thickness monitoring region and detecting light transmitted from the material layer at the deposition thickness monitoring region, and
measuring the deposition thickness of the material layer formed on the substrate based on the intensity of the light which is detected.
14. A method of measuring a deposition thickness of a material layer on a substrate, comprising the steps of:
depositing a material onto a substrate and a deposition thickness monitoring region provided at a predetermined position on or near the substrate to form a material layer,
irradiating an X ray onto the deposition thickness monitoring region and detecting X ray reflection wave from the material layer at the deposition thickness monitoring region, and
measuring the deposition thickness of the material layer formed on the substrate based on the X ray reflection wave which is detected.
15. A method of measuring a deposition thickness of a material layer on a substrate according to claim 14, wherein
the deposition thickness of the material layer is calculated based on a change of the reflection rate of the X ray reflection wave which is detected, the change being caused by interference.