1. A system for generating graphene in a magnetic field, comprising:
a liquid reaction chamber configured to receive a working liquid source, a carbon atom source, and a catalyst to cause a chemical reaction in the reaction chamber and a resulting reactant liquid comprising ring structures having starved carbon atoms;
a graphene generation chamber coupled to said liquid reaction chamber and configured to receive said resulting reactant liquid as it exits said liquid reaction chamber, said graphene generation chamber being configured to generate a graphene film from said ring structures as part of a polymerization process, said graphene generation chamber comprising:
a growth portion;
a recovery portion; and
a magnetic structure comprising a two-dimensional array of alternating polarity magnetic sources, said magnetic structure producing a magnetic field having a magnetic field gradient sufficient to float the graphene film over said magnetic structure, said magnetic structure extending from said growth portion to said recovery portion; and
a graphene seed source configured to provide a graphene seed to an initial location over said magnetic field within said growth portion of said graphene generation chamber, said graphene film being generated over said magnetic field such that said graphene film floats over said magnetic field due to said graphene film being diamagnetic, said ring structures causing said floating graphene film to grow continuously from said initial location, said graphene generation chamber being configured such that the floating graphene film moves away from said initial location and through said graphene generation chamber until it exits said recovery portion of said graphene generation chamber as a recovered graphene product.
2. The system of claim 1, wherein said working liquid source comprises an inert solvent.
3. The system of claim 1, wherein ring structures have six starved carbon atoms.
4. The system of claim 1, wherein said carbon atom source comprises Acetylene.
5. The system of claim 1, wherein said catalyst comprises Palladium.
6. The system of claim 1, wherein said carbon atom source comprises aromatic rings.
7. The system of claim 6, wherein said aromatic rings comprises at least one of Toluene, Xylene, Aniline, Phenol, Benzoic Acid, Styrene, Benzaldehyde, Amygdalin, Hyuacinthin, Cinnamaldehyde, Anethole, Benzyl Acetate, or Phenylethanol.
8. The system of claim 1, wherein said carbon atom source comprises polycyclic aromatic rings.
9. The system of claim 8, wherein said polycyclic aromatic rings comprises at least one of Naphtalene, Anthracene, Phenanthrene, ortho-Phenanthroline, Dibenzanthrancene, Pyrene, or Benzopyrene.
10. The system of claim 1, wherein said magnetic structure comprises permanent magnetic material.
11. The system of claim 10, wherein said permanent magnetic material is magnetized such that the magnetic field strength of the magnetic field is strongest near the initial location of the graphene seed and the magnetic strength of the magnetic field becomes progressively weaker until it is weakest near the end of said recovery portion of said graphene generation chamber.
12. The system of claim 1, wherein said magnetic structure comprises one of electromagnets or electro-permanent magnets.
13. The system of claim 1, further comprising:
at least one laser for trimming said graphene film.
14. The system of claim 1, said graphene generation chamber further comprising:
a second magnetic structure above said graphene.
15. The system of claim 1, wherein the outer edges of said magnetic field along its length exhibit stronger field strengths than the center portion of said magnetic field.
16. The system of claim 1, further comprising:
a barrier magnetic field source.
17. The system of claim 1, said graphene generation chamber further comprising:
a processing portion between said growth portion and said recovery portion of said graphene generation chamber for processing said graphene film.
18. The system of claim 17, wherein said processing comprises one of lasers drawing conductive traces, applying other atoms using stereo lithography, activating carbon, or mixing impurities.
19. The system of claim 1, wherein said chemical reaction comprises one of decarboxylation of sodium benzoate, heating phenol with zinc, polymerization of ethyne (acetylene) using a hot copper tube, reduction of benzene diazonium chloride, and hydrolysis of sulphonic acid.
20. The system of claim 1, wherein said ring structures comprise at least one of Benzene molecules, Buckminsterfullerene molecules, or Fullerene molecules.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A circuit, comprising:
a light emitting diode (LED) circuit comprising a plurality of LEDs;
a DC-DC boost circuit coupled to the LED circuit, the DC-DC boost circuit providing a first voltage and receiving a second voltage, wherein the plurality of LEDs are connected in-series between a first node for providing the first voltage and a second node, and wherein the plurality of LEDs are configured to conduct an LED circuit current;
a first transistor having a first characteristic that varies over at least one of temperature and process, wherein the first transistor having a first current electrode coupled to the DC-DC boost circuit, the first transistor also having a second current electrode coupled to a ground terminal, and having a control electrode, wherein the first current electrode of the first transistor is coupled to the second node for receiving the LED circuit current, and wherein a feedback voltage, generated at the second node as a result of the LED circuit current and a first resistance of the first transistor between the second node and the ground terminal, is supplied as the second voltage to the DC-DC boost circuit;
a control circuit, comprising:
a second transistor in parallel with the first transistor, the second transistor having a second characteristic that varies over at least one of temperature and process,
wherein the first characteristic and the second characteristic are a same characteristic that responds similarly to changes in at least one of temperature and process, and wherein the second transistor having a first current electrode coupled to the DC-DC boost circuit at a third node for receiving a constant current from the DC-DC boost circuit, the second transistor further having a second current electrode coupled to the ground terminal, wherein a voltage is generated at the third node as a result of the constant current and a second resistance of the second transistor between the third node and the ground terminal, and the second transistor having a control electrode coupled to the control electrode of the first transistor; and
a comparison circuit for comparing a first input and a second input and for providing an output based on a difference between the first input and the second input,
and wherein the comparison circuit having the first input coupled to the first current electrode of the second transistor to receive the voltage generated at the third node, the comparison circuit having the second input coupled to the DC-DC boost circuit for receiving a constant voltage from the DC-DC boost circuit, and the comparison circuit having the output coupled to the control electrode of the first transistor and to the control electrode of the second transistor for providing a control voltage to the first transistor and the second transistor to vary the resistance of the first transistor and the resistance of the second transistor.
2. A circuit as in claim 1, wherein the comparison circuit comprises an operational amplifier.
3. A circuit as in claim 1, wherein the output of the comparison circuit is used to maintain the resistance of the first transistor at an approximately constant first value.
4. A circuit as in claim 1, wherein the output of the comparison circuit is used to maintain the resistance of the second transistor at an approximately constant second value.
5. A circuit as in claim 1, wherein a voltage differential between the first current electrode and the second current electrode of the first transistor is less than 200 milliVolts (mV).
6. A circuit as in claim 1, wherein the combination of the control circuit and the comparison circuit forms a closed-loop control circuit to regulate the control voltage.
7. A circuit as in claim 1, wherein the DC-DC boost circuit generates a regulated voltage, and wherein the regulated voltage is provided as the constant voltage.
8. A circuit, comprising:
a light emitting diode (LED) circuit comprising a plurality of LEDs;
a DC-DC boost circuit coupled to the LED circuit, the DC-DC boost circuit providing a first voltage and receiving a second voltage, wherein the plurality of LEDs are connected in-series between a first node for providing the first voltage and a second node, and wherein the plurality of LEDs are configured to conduct an LED circuit current;
a first transistor having a first current electrode coupled to the DC-DC boost circuit, the first transistor also having a second current electrode coupled to a ground terminal, and having a control electrode, wherein the first current electrode of the first transistor is coupled to the second node for receiving the LED circuit current, and wherein a feedback voltage, generated at the second node as a result of the LED circuit current and a first resistance of the first transistor between the second node and the ground terminal, is supplied as the second voltage to the DC-DC boost circuit; and
a control circuit, comprising:
a second transistor having a first current electrode coupled to the DC-DC boost circuit at a third node for receiving a constant current from the DC-DC boost circuit, the second transistor further having a second current electrode coupled to the ground terminal, wherein a voltage is generated at the third node as a result of the constant current and a second resistance of the second transistor between the third node and the ground terminal, and the second transistor having a control electrode coupled to the control electrode of the first transistor; and
an amplifier having a first input coupled to the first current electrode of the second transistor to receive the voltage generated at the third node, the amplifier having a second input coupled to the DC-DC boost circuit for receiving a constant voltage from the DC-DC boost circuit, and the amplifier having an output coupled to the control electrode of the first transistor and to the control electrode of the second transistor for providing a control voltage to the first transistor and the second transistor to vary the resistance of the first transistor and the resistance of the second transistor.
9. A circuit as in claim 8, wherein the output of the amplifier is used to maintain the resistance of the first transistor at an approximately constant first value.
10. A circuit as in claim 9, wherein the output of the amplifier is used to maintain the resistance of the second transistor at an approximately constant second value.
11. A circuit as in claim 8, wherein a voltage differential between the first current electrode and the second current electrode of the first transistor is less than 200 milliVolts (mV).
12. A circuit as in claim 8, wherein the combination of the control circuit and the comparison circuit forms a closed-loop control circuit to regulate the control voltage.
13. A circuit as in claim 8, wherein the DC-DC boost circuit generates a regulated voltage, and wherein the regulated voltage is provided as the constant voltage.