What is claimed is:
1. A method for diagnosing a cell defect of a PDP module, comprising:
dividing a screen of the PDP module into a plurality of regions; and
displaying a pattern for diagnosing the cell defect on a portion of the regions, wherein the remaining portion of the regions do not display the pattern.
2. The method of claim 1, comprising blocking the remaining portion of the regions.
3. The method of claim 1, further comprising varying the portion of the regions and pattern according to a control signal.
4. The method of claim 3, wherein the control signal is responsive to a request of a diagnostician or service technician.
5. The method of claim 3, wherein the plurality of regions include at least first and second regions having different respective weights for a cell defect contained therein.
6. An apparatus configured to diagnose a cell defect of a PDP module, comprising:
a scaler IC configured to receive and output a pattern for diagnosing the cell defect;
the PDP module configured to display an output of the scaler IC; and
a microcomputer configured to control the scaler IC to block a remaining region of a screen of the PDP module except for a diagnosing region configured to display the pattern.
7. The apparatus of claim 6, comprising a pattern generator configured to provide the pattern.
8. The apparatus of claim 7, wherein the microcomputer controls the pattern generator to vary the pattern provided to the scaler IC.
9. The apparatus of claim 8, wherein the diagnosing region is one of magnified, demagnified and moved to a different location on the screen.
10. The apparatus of claim 6, wherein the microcomputer adjusts values of registers for setting a display region within a frame of the scaler IC to block the remaining region except for the diagnosing region.
11. The apparatus of claim 6, wherein the microcomputer controls the scaler IC to vary the diagnosing region.
12. A method, comprising:
determining a plurality of regions in a display device; and
displaying a pattern for evaluating a characteristic of the display device in at least a first region of the plurality of regions, wherein the characteristic identified in a second region of the plurality of regions has a different weight than in a first region.
13. The method of claim 12, wherein the first region is one of magnified, demagnified and moved to a different location on a screen.
14. The method of claim 12, wherein the display device is one of a PDP module and a LCD device.
15. The method of claim 12, wherein the characteristic is one of a cell defect, white balance, brightness, contrast and gamma correction.
16. The method of claim 12, wherein the remaining regions do not display the pattern.
17. The method of claim 16, wherein the remaining regions display one of a blocked signal, a default device signal and a prescribed video signal.
18. The method of claim 9, wherein the evaluating a characteristic identifies a cell defect, and wherein the plurality of regions each have a different prescribed weight for a corresponding cell defect therein.
19. The method of claim 18, wherein the pattern is shifted to a second region and the remaining regions to not display the pattern.
20. The method of claim 19, wherein the second region surrounds the first region on a screen.
21. The method of claim 19, comprising:
shifting the pattern through each of the regions to determine respective cell defects therein, wherein the shifting the pattern comprises combining the respective cell defects with the corresponding weight to determine a score for said each region;
combining the plurality of scores to determine a cell defect value for the display device; and
comparing the cell defect value to a prescribed value to determine a defective status for the display device.
22. The method of claim 21, wherein the shifting the pattern comprises determining said respective cell defects for a plurality of colors.
23. The method of claim 22, wherein the pattern varies for at least two of the regions, and wherein the colors include at least one of R, G, B and a prescribed color.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A back side illumination image sensor, comprising:
a device isolation region and a pixel region on a front side of a first substrate;
a light sensor and a readout circuit on the pixel region;
an interlayer dielectric layer and a metal line on the front side of the first substrate;
a second substrate that is bonded to the front side of the first substrate formed with the metal line;
a pixel isolating dielectric layer on the device isolation region at a back side of the first substrate; and
a microlens on the light sensor at the back side of the first substrate.
2. The back side illumination image sensor according to claim 1, further comprising pixel isolating ion implantation layers around sides of the pixel isolating dielectric layer.
3. The back side illumination image sensor according to claim 2, wherein the pixel isolating ion implantation layers are further around sides of the device isolation region.
4. The back side illumination image sensor according to claim 2, wherein the pixel isolating ion implantation layer is a P-type ion implantation region.
5. The back side illumination image sensor according to claim 1, further comprising a pad on the front side of the first substrate that is opened to the back side of the first substrate.
6. The back side illumination image sensor according to claim 1, further comprising a dielectric layer contacting the second substrate between the second substrate and the first substrate.
7. A method of manufacturing a back side illumination image sensor, comprising:
forming an ion implantation layer by implanting ions over an entire front side of a first substrate;
defining a pixel region by forming a device isolation region on the front side of the first substrate;
forming a light sensor and a readout circuit on the pixel region;
forming an interlayer dielectric layer and a metal line on the front side of the first substrate;
bonding a second substrate with the front side of the first substrate formed with the metal line;
removing a lower part of the first substrate based on the ion implantation layer;
forming a pixel isolating dielectric layer on the device isolating region at a back side of the first substrate; and
forming a microlens on the light sensor at the back side of the first substrate.
8. The method for manufacturing the back side illumination image sensor according to claim 7, further comprising forming pixel isolating ion implantation layers around sides of the pixel isolating dielectric layer.
9. The method for manufacturing the back side illumination image sensor according to claim 8, wherein the forming of the pixel isolating ion implantation layer further forms the pixel isolating ion implantation layers around sides of the device isolation region.
10. The method for manufacturing the back side illumination image sensor according to claim 8, wherein the forming of the pixel isolating ion implantation layer comprises implanting pixel isolating ions into the surface of the back side of the first substrate.
11. The method for manufacturing the back side illumination image sensor according to claim 8, wherein the forming of the pixel isolating ion implantation layers forms a P-type ion implantation region on the device isolation region.
12. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the forming of the ion implantation layer is performed by implanting hydrogen ions or helium ions.
13. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the forming of the ion implantation layer forms the ion implantation layer at a predetermined depth from the front side of the first substrate.
14. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the removing of the lower part of the first substrate removes a portion of the first substrate at a side opposite to the front side of the first substrate based on the ion implantation layer.
15. The method for manufacturing the back side illumination image sensor according to claim 7, further comprising:
forming a pad on the front side of the first substrate; and
opening the pad after the removing the lower part of the first substrate based on the ion implantation layer.
16. The method for manufacturing the back side illumination image sensor according to claim 15, wherein the opening of the pad performs a pad opening process on the back side of the first substrate.
17. The method for manufacturing the back side illumination image sensor according to claim 7, further comprising:
forming a dielectric layer on the second substrate,
wherein the dielectric layer contacts the front side of the first substrate in bonding the second substrate with the front side of the first substrate.
18. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the ion implantation layer is formed before defining the pixel region.
19. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the ion implantation layer is formed after forming the light sensor on the pixel region, wherein the readout circuit is formed after forming the ion implantation layer.
20. The method for manufacturing the back side illumination image sensor according to claim 7, wherein the ion implantation layer is formed before forming the light sensor.